Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPD30N06S2L-23

Name: SPD30N06S2L-23
Brand: Infineon Technologies
SKU: SPD30N06S2L-23
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SPD30N06S2L-23

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SPD30N06S2L-23.pdf

Description:: MOSFET N-CH 55V 30A TO252-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:9,376

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SPD30N06S2L-23 from Infineon Technologies is an N-channel enhancement-mode logic-level power MOSFET in TO-252 (DPAK) package, rated for 55 V V_DS, 30 A continuous drain current at T_C = 25 °C, and 13 mΩ R_DS(on) at V_GS = 10 V. It features avalanche rating, 6 kV/µs dv/dt capability, and 175 °C maximum junction temperature - deployed in DC-DC converters, motor control H-bridges, and industrial power switches.

For engineers reviewing the SPD30N06S2L-23 datasheet, SPD30N06S2L-23 pinout, SPD30N06S2L-23 application, or SPD30N06S2L-23 equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V), low R_DS(on) at 4.5 V (12.5–17 mΩ), thermal resistance R_thJC = 0.69–1.1 K/W, and integrated avalanche energy rating (E_AS = 240 mJ).

Technical Context

This MOSFET uses Infineon's OptiMOS™ process to optimize conduction and switching losses simultaneously. Its logic-level gate enables direct drive from 3.3 V or 5 V microcontrollers without level-shifting, while its 175 °C rated junction supports high-temperature industrial environments.

The device integrates a robust body diode with t_rr = 33–41 ns and Q_rr = 71–90 nC, supporting synchronous rectification and hard-switched topologies. Avalanche ruggedness (E_AS = 240 mJ) and dv/dt immunity (6 kV/µs) ensure reliability under inductive load transients and parasitic ringing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	55 V - supports 48 V nominal bus systems with 15% margin for transient overvoltage
R_DS(on) @ V_GS = 10 V	9.7–13 mΩ - enables <1 W conduction loss at 30 A, reducing heatsink requirements
R_DS(on) @ V_GS = 4.5 V	12.5–17 mΩ - ensures full enhancement with standard logic-level MCU outputs
I_D Continuous	30 A @ T_C = 25 °C - usable up to ~22 A at T_C = 100 °C per derating curve
E_AS	240 mJ - withstands single-pulse inductive energy without failure in motor or solenoid drives
Q_g	52–69 nC - determines gate driver current demand and switching speed trade-off
t_r/t_f	14–21 ns / 13–20 ns - supports >500 kHz switching in SMPS with low overlap loss

Pinout & Package

SPD30N06S2L-23 is housed in a surface-mount TO-252-3 (DPAK) package with exposed drain pad for thermal performance. The package meets JEDEC MO-238 standards and is optimized for PCB copper area cooling (6 cm² recommended).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal of N-channel MOSFET	Reference node for gate drive; connects to low-side return path and PCB ground plane
Pin 2 (Gate)	Control electrode	Receives logic-level voltage (0–10 V); requires <100 nA leakage current handling
Pin 3 (Drain)	Main current-carrying terminal	Connected to high-side load; ties directly to large copper pour for thermal dissipation

Key Features

Feature	Design Value
Logic-level gate threshold	V_GS(th) = 1.2–2.0 V - eliminates need for external gate drivers in MCU-based systems
Avalanche-rated operation	E_AS = 240 mJ - enables reliable unclamped inductive switching without snubbers
High dv/dt immunity	6 kV/µs - suppresses false turn-on during fast voltage transients in noisy industrial environments
Thermal robustness	T_j(max) = 175 °C - supports operation in sealed enclosures or high-ambient-temperature applications
Low gate charge	Q_gd = 17–26 nC - minimizes Miller-induced switching delay and improves controllability

Applications

Motor Control

DC-DC Conversion

Use Scenario: Half-bridge or H-bridge driving of 24–48 V brushed DC motors in factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switch with fast turn-off (t_f ≤ 20 ns) to minimize shoot-through risk and enable PWM frequencies up to 100 kHz.

Use Value: Logic-level gate allows direct STM32 GPIO drive; 13 mΩ R_DS(on) limits I²R loss to <1.2 W at 20 A, reducing thermal design complexity.

Use Scenario: Synchronous rectifier in 48 V input, 12 V output buck converter for telecom power supplies.

IC Role / Device Role / Timing Role: Secondary-side switch replacing Schottky diode; body diode reverse recovery (t_rr = 33–41 ns) minimized by synchronous timing.

Use Value: Q_rr = 71–90 nC and low V_SD (0.9–1.3 V) cut conduction loss by >40% vs. discrete diode, improving efficiency at 20–30 A loads.

Industrial Power Switching

Load Protection

Use Scenario: Solid-state relay replacement in programmable logic controller (PLC) output modules switching 24 V DC solenoids and valves.

IC Role / Device Role / Timing Role: High-reliability power switch with built-in avalanche energy absorption (E_AS = 240 mJ) for inductive kick suppression.

Use Value: Eliminates external TVS/clamp components; 175 °C T_j(max) ensures stable operation across -40 to +85 °C ambient with no derating penalty.

Use Scenario: Electronic fuse in 48 V battery management system (BMS) main power path with overcurrent and short-circuit protection.

IC Role / Device Role / Timing Role: Fast-turn-off controlled switch (t_d(off) = 8–12 ns) coordinated with current-sense amplifier and comparator for sub-1 µs fault response.

Use Value: Low R_DS(on) enables accurate current sensing via shunt; dv/dt rating prevents false triggering during bus transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLR7843PbF	R_DS(on) = 9.3 mΩ @ 10 V but V_GS(th) = 1.0–2.0 V; higher C_iss (2000 pF vs. 1725–2300 pF)	Slightly lower conduction loss but slower switching due to higher input capacitance	Prefer when lowest R_DS(on) dominates; verify gate driver slew rate capability
STP30NF06L	R_DS(on) = 18 mΩ @ 4.5 V (vs. 12.5–17 mΩ); E_AS not specified in datasheet	Lacks documented avalanche rating and has higher gate charge (Q_g = 80 nC)	Acceptable for non-inductive or low-energy switching; avoid in motor or relay drive where E_AS is critical

Compared with IRLL7843PbF and STP30NF06L, SPD30N06S2L-23 delivers superior balance of logic-level drive margin, avalanche ruggedness, and thermal robustness - making it preferred for industrial H-bridges and high-reliability DC-DC secondaries where both conduction efficiency and transient resilience are required.

Availability

SPD30N06S2L-23 is available at Aetrix Electronics and suitable for motor control, DC-DC conversion, and industrial power switching requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for SPD30N06S2L-23 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ logic-level power MOSFET product line, engineered for high-efficiency, high-reliability switching in space-constrained industrial and automotive power stages.

FAQ

What is the maximum safe operating temperature for SPD30N06S2L-23?

The absolute maximum junction temperature is 175 °C, and the storage temperature range is –55 to +175 °C. Thermal derating begins above T_C = 25 °C, with continuous drain current dropping to ~22 A at T_C = 100 °C per the ID vs. TC graph on page 4 of the datasheet. PCB layout with ≥6 cm² copper area is required to sustain rated current at elevated case temperatures.

Does SPD30N06S2L-23 require a gate resistor for stability?

Yes - a gate series resistor (typically 5–22 Ω) is recommended to dampen gate oscillation and control dV/dt during switching. This mitigates risk of parasitic turn-on caused by Miller coupling, especially in high-speed or high-noise environments. The device's 6 kV/µs dv/dt rating assumes proper gate drive layout and resistor selection per Infineon's AN2015-07 application note.

Can SPD30N06S2L-23 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (see page 9 R_DS(on) vs. T_j curve) enables inherent current sharing when paralleled. However, matched gate drive routing, symmetrical PCB layout, and individual gate resistors are mandatory to ensure balanced dynamic current distribution and prevent thermal runaway.

Is the body diode suitable for reverse recovery in synchronous rectification?

Yes - the integrated body diode has t_rr = 33–41 ns and Q_rr = 71–90 nC at T_j = 25 °C, enabling use in synchronous buck topologies up to ~300 kHz. For optimal performance, gate timing must ensure the MOSFET turns on before the body diode conducts significantly, minimizing reverse recovery losses and associated EMI.

SPD30N06S2L-23 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 23mOhm @ 22A, 10V

Vgs(th) (Max) @ Id:: 2V @ 50µA

Gate Charge (Qg) (Max) @ Vgs:: 42 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1390 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 100W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

SPD30N06S2L-23 FAQ

1.How can I place an order for SPD30N06S2L-23 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPD30N06S2L-23 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPD30N06S2L-23 reliable?

The price and inventory of SPD30N06S2L-23 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPD30N06S2L-23 is usually 5 days.

3.What payment methods are accepted for SPD30N06S2L-23?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPD30N06S2L-23 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPD30N06S2L-23?

SPD30N06S2L-23 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPD30N06S2L-23 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPD30N06S2L-23?

For technical support, including SPD30N06S2L-23 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPD30N06S2L-23 requirements.

6.How does Aetrix verify that SPD30N06S2L-23 is sourced from the original manufacturer or authorized distributors?

All SPD30N06S2L-23 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPD30N06S2L-23 meets industry standards.

7.What is the process for return or replacement of SPD30N06S2L-23?

All SPD30N06S2L-23 units undergo pre-shipment inspection (PSI). If there is an issue with SPD30N06S2L-23, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPD30N06S2L-23 part is unused and in its original packaging.

Return procedure for SPD30N06S2L-23:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.