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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPD30N08S2-22

Name: SPD30N08S2-22
Brand: Infineon Technologies
SKU: SPD30N08S2-22
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPD30N08S2-22

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SPD30N08S2-22.pdf

Description:: MOSFET N-CH 75V 30A TO252-3

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Product details

Overview

SPD30N08S2-22 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™ power MOSFET rated for 75 V V_DS, 30 A continuous drain current at T_C = 25 °C, and 21.5 mΩ R_DS(on) at V_GS = 10 V. It features avalanche rating (E_AS = 240 mJ), 175 °C maximum junction temperature, and dv/dt ruggedness of 6 kV/µs - deployed in high-reliability DC-DC converters and motor control half-bridges.

For engineers reviewing the SPD30N08S2-22 datasheet, SPD30N08S2-22 pinout, SPD30N08S2-22 application, or SPD30N08S2-22 equivalent, key selection criteria include R_DS(on) vs. temperature stability, gate charge (Q_g = 43–57 nC), reverse diode forward voltage (V_SD = 0.9–1.3 V), and TO252-3 package thermal resistance (R_thJC = 0.7–1.1 K/W).

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction and switching losses in high-frequency synchronous rectification and PWM-driven loads. Its 175 °C rated junction temperature and avalanche-rated design support operation under repetitive transient stress without derating beyond thermal limits.

Dynamic parameters - including C_iss = 1466–1950 pF, Q_gd = 24–36 nC, and t_r/t_f = 29–44 ns / 28–42 ns - are specified at V_DD = 40 V, I_D = 30 A, and R_G = 7.5 Ω, enabling precise loss modeling in hard-switched topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	75 V - supports 48 V bus systems with 50 % margin against transients
R_DS(on) max	21.5 mΩ at V_GS = 10 V, T_j = 25 °C - defines conduction loss in 30 A load paths
I_D Continuous	30 A at T_C = 25 °C - requires heatsinking to maintain case temperature ≤ 25 °C
E_AS	240 mJ single-pulse avalanche energy - enables robustness against inductive turn-off spikes
Q_g	43–57 nC - determines gate driver power and switching speed trade-offs
V_GS(th)	2.1–4.0 V - ensures reliable turn-on with standard 3.3 V or 5 V logic-level drivers
V_SD	0.9–1.3 V at I_F = 30 A - impacts freewheeling loss and body diode recovery behavior

Pinout & Package

SPD30N08S2-22 is housed in a surface-mount TO252-3 (DPAK) package with exposed drain pad for thermal performance. The package complies with JEDEC MO-238 and provides 0.7–1.1 K/W junction-to-case thermal resistance.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or current-sense shunt
Pin 2 (Gate)	Control input	Receives PWM signal; requires <20 V absolute max rating per datasheet
Pin 3 (Drain)	Power output	Connected to high-side rail or inductive load; electrically tied to exposed pad

Key Features

Feature	Design Value
Avalanche-rated operation	Guarantees safe single-pulse energy handling up to 240 mJ without failure
175 °C maximum junction temperature	Enables sustained operation in sealed enclosures or high-ambient industrial environments
dv/dt ruggedness	6 kV/µs rating prevents false turn-on during fast voltage transients
Optimized gate charge profile	Q_gd/Q_g ratio ~0.6 supports efficient hard-switching with minimal Miller effect

Applications

Motor Drive Half-Bridge

48 V DC-DC Synchronous Rectifier

Use Scenario: High-efficiency BLDC motor phase leg in e-bike controllers with 40–50 V nominal supply.

IC Role / Device Role / Timing Role: Low-side switching element in complementary PWM-controlled half-bridge; conducts 30 A peak current.

Use Value: 21.5 mΩ R_DS(on) minimizes I²R loss at full load; integrated avalanche capability absorbs back-EMF spikes.

Use Scenario: Secondary-side synchronous rectifier in isolated 48 V → 12 V telecom DC-DC converter.

IC Role / Device Role / Timing Role: Active rectifying switch replacing Schottky diode; driven by transformer-coupled gate signal.

Use Value: V_SD = 0.9–1.3 V and Q_rr = 130–163 nC reduce conduction and recovery losses versus discrete diodes.

Industrial Power Supply OR-ing

Automotive Body Control Module Load Switch

Use Scenario: Redundant 24 V input OR-ing in programmable logic controller (PLC) power stage.

IC Role / Device Role / Timing Role: Back-to-back configured MOSFET for bidirectional current blocking and low-loss forward conduction.

Use Value: 75 V V_DS rating accommodates 24 V system surges; 175 °C T_jmax ensures reliability in unventilated cabinets.

Use Scenario: High-side load switch for LED lighting or solenoid actuation in 12 V automotive BCMs.

IC Role / Device Role / Timing Role: Controlled power delivery switch with integrated overtemperature and short-circuit protection interface.

Use Value: Avalanche rating and dv/dt immunity prevent latch-up during battery dump events; TO252 footprint simplifies layout in space-constrained modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF3205PbF	V_DS = 55 V, R_DS(on) = 8.0 mΩ @ 10 V, TO220 package	Limited to ≤40 V systems; higher thermal mass but no avalanche rating	Select when lower R_DS(on) is critical and voltage margin is sufficient
STP30NF20	V_DS = 200 V, R_DS(on) = 40 mΩ @ 10 V, TO220 package	Higher voltage headroom but higher conduction loss and larger footprint	Choose for 100–150 V bus designs where 75 V rating is insufficient

Compared with IRF3205PbF and STP30NF20, SPD30N08S2-22 uniquely balances 75 V rating, 21.5 mΩ on-resistance, avalanche robustness, and TO252 thermal efficiency - making it optimal for compact 48 V industrial and automotive power stages requiring reliability under transient stress.

Availability

SPD30N08S2-22 is available at Aetrix Electronics and suitable for motor drives, 48 V DC-DC converters, industrial OR-ing circuits, and automotive body control modules requiring stable component supply and long-term lifecycle assurance.

Supply support for SPD30N08S2-22 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The OptiMOS™ product line delivers high-performance, low-R_DS(on) silicon-based power MOSFETs engineered for efficiency-critical switching applications in industrial, automotive, and computing power systems.

FAQ

What is the maximum gate-source voltage for SPD30N08S2-22?

The absolute maximum V_GS rating is ±20 V per the datasheet. Operation above +20 V risks permanent gate oxide damage. Recommended drive is 10 V for full R_DS(on) specification, with 12–15 V acceptable for reduced switching losses if gate driver supports it.

Does SPD30N08S2-22 have a built-in body diode, and what are its characteristics?

Yes - it integrates a monolithic body diode with typical forward voltage V_SD = 0.9–1.3 V at I_F = 30 A and reverse recovery charge Q_rr = 130–163 nC. This diode supports freewheeling in inductive loads but is not optimized for high-frequency ZVS; external Schottky may be preferred in resonant topologies.

Can SPD30N08S2-22 be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(on) (increasing with T_j) enables stable current sharing. However, matched gate drive impedance, symmetrical PCB layout, and thermal coupling are required. Derate total current by ≥15 % versus sum of individual ratings for reliability.

Is the TO252-3 package lead-free and RoHS compliant?

Yes - SPD30N08S2-22 meets RoHS Directive 2011/65/EU and is manufactured with lead-free terminations and halogen-free molding compound, as confirmed in Infineon's official compliance documentation (document ID: Q67060-S7413).

SPD30N08S2-22 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 30A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 21.5mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 4V @ 80µA

Gate Charge (Qg) (Max) @ Vgs:: 57 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1950 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

SPD30N08S2-22 FAQ

1.How can I place an order for SPD30N08S2-22 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPD30N08S2-22 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPD30N08S2-22 reliable?

The price and inventory of SPD30N08S2-22 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPD30N08S2-22 is usually 5 days.

3.What payment methods are accepted for SPD30N08S2-22?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPD30N08S2-22 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPD30N08S2-22?

SPD30N08S2-22 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPD30N08S2-22 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPD30N08S2-22?

For technical support, including SPD30N08S2-22 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPD30N08S2-22 requirements.

6.How does Aetrix verify that SPD30N08S2-22 is sourced from the original manufacturer or authorized distributors?

All SPD30N08S2-22 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPD30N08S2-22 meets industry standards.

7.What is the process for return or replacement of SPD30N08S2-22?

All SPD30N08S2-22 units undergo pre-shipment inspection (PSI). If there is an issue with SPD30N08S2-22, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPD30N08S2-22 part is unused and in its original packaging.

Return procedure for SPD30N08S2-22:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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