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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPD35N10

Name: SPD35N10
Brand: Infineon Technologies
SKU: SPD35N10
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPD35N10

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SPD35N10.pdf

Description:: MOSFET N-CH 100V 35A TO252-3

Quantity:: RFQ Add To RFQ list

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Inventory:6,360

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Product details

Overview

SPD35N10 from Infineon Technologies is an N-channel enhancement-mode SIPMOS™ power MOSFET rated for 100 V drain-source voltage, 35 A continuous drain current at 25°C, and 44 mΩ maximum R_DS(on) at V_GS = 10 V and I_D = 26.4 A. It operates up to 175°C junction temperature, features avalanche energy rating (245 mJ), dv/dt ruggedness (6 kV/µs), and is housed in a P-TO252 (DPAK) surface-mount package.

For engineers reviewing the SPD35N10 datasheet, SPD35N10 pinout, SPD35N10 application, or SPD35N10 equivalent, key selection criteria include its 100 V blocking capability, low conduction loss under high-current DC/switching loads, thermal robustness in motor drive and SMPS output stages, and validated unclamped inductive switching performance.

Technical Context

This MOSFET employs Infineon's SIPMOS™ trench-gate process optimized for low R_DS(on) and fast switching with controlled gate charge (Q_g = 49–65 nC, Q_gd = 27–41 nC). Its dynamic characteristics-C_iss = 1180–1570 pF, C_oss = 245–326 pF, t_r = 63–95 ns, t_f = 23–34 ns-support efficient hard-switched topologies up to several hundred kHz.

The integrated body diode exhibits V_SD = 0.95–1.25 V at I_F = 35 A and t_rr = 80–100 ns with Q_rr = 230–290 nC, enabling reliable freewheeling in synchronous rectification and half-bridge configurations without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V and 72 V bus systems with ≥2× safety margin against transients
R_DS(on) max	44 mΩ @ V_GS = 10 V, I_D = 26.4 A - enables ≤1.5 W conduction loss at 26.4 A DC load
I_D cont	35 A @ T_C = 25°C - suitable for high-current motor phase legs and DC-DC output switches
E_AS	245 mJ - withstands single-pulse inductive energy in unclamped switching events (e.g., relay coil snubbing)
dv/dt rating	6 kV/µs - ensures immunity to false turn-on during fast voltage transients in noisy industrial environments
T_j max	175°C - allows operation in sealed enclosures or high-ambient automotive under-hood zones
Q_g	49–65 nC - defines gate driver current requirement (~1.3 A peak for 50 ns rise time)

Pinout & Package

SPD35N10 uses the P-TO252 (DPAK) surface-mount package with standard three-terminal configuration: Drain (tab), Source (pin 1), Gate (pin 2). The exposed drain pad provides low thermal resistance (R_thJC = 1 K/W) and serves as primary heat path to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, electrically connected to package backside metal	Must be soldered to ≥6 cm² copper pour for thermal management; forms primary heat sink interface
Source (Pin 1)	Reference node for gate drive and current sensing	Low-inductance connection critical for stable switching; ties to power ground plane
Gate (Pin 2)	Control input for channel conduction	Requires <20 V absolute max rating; sensitive to ESD; routed away from noisy power traces

Key Features

Feature	Design Value
Avalanche-rated operation	245 mJ single-pulse energy handling enables robustness in inductive load switching without external clamping
High dv/dt immunity	6 kV/µs rating prevents spurious turn-on during fast voltage transitions in motor drives and inverters
175°C maximum junction temperature	Supports extended thermal design margins in sealed or high-ambient industrial control cabinets
Low gate charge profile	Q_gd/Q_g ratio ~0.55 reduces Miller-induced switching delay and improves controllability
Optimized body diode	t_rr = 80–100 ns and soft recovery reduce EMI and voltage overshoot in freewheeling paths

Applications

Motor Drive Half-Bridge

DC-DC Synchronous Rectifier

Use Scenario: High-current BLDC motor phase leg in 48 V e-bike controller with PWM frequency of 20 kHz.

IC Role / Device Role / Timing Role: Low-side switching element conducting 35 A continuous current; switched at 20 kHz with 100 ns gate drive edges.

Use Value: 44 mΩ R_DS(on) limits conduction loss to 1.5 W at full load; 175°C rating accommodates ambient + case rise to 125°C.

Use Scenario: Secondary-side switch in isolated 48 V → 12 V LLC resonant converter delivering 30 A.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode; driven complementary to primary-side FET with dead-time control.

Use Value: Body diode t_rr = 80–100 ns minimizes reverse-recovery loss; low Q_g enables clean 500 kHz switching edge control.

Industrial Power Supply Output Switch

Automotive HVAC Blower Driver

Use Scenario: Main output switch in 1 kW telecom rectifier with forced-air cooling.

IC Role / Device Role / Timing Role: Primary high-current switching device in active clamp forward topology operating at 100 kHz.

Use Value: Avalanche rating absorbs leakage inductance spikes; R_thJC = 1 K/W enables 150 W dissipation with modest heatsinking.

Use Scenario: H-bridge driver for 12 V automotive HVAC blower motor drawing up to 30 A peak.

IC Role / Device Role / Timing Role: N-channel high-side and low-side switch in dual DPAK configuration; operated with bootstrap gate drive.

Use Value: dv/dt rating of 6 kV/µs prevents shoot-through during battery load dump transients; 175°C rating meets AEC-Q101 ambient requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP35NF10	R_DS(on) = 40 mΩ typ (vs. 36 mΩ typ for SPD35N10); Q_g = 52 nC; no published dv/dt rating	Lacks specified dv/dt immunity and avalanche energy data; lower thermal resistance not documented	Acceptable where transient immunity is less critical and thermal margin is ample
IRF3205	R_DS(on) = 8 mΩ @ 10 V but only rated for 55 V V_DS; higher C_iss (1800 pF); no 175°C rating	Not suitable for 100 V bus applications; limited to ≤48 V systems; reduced thermal headroom	Only viable if system voltage is capped at 40 V and peak junction temperature remains <150°C

Compared with STP35NF10 and IRF3205, SPD35N10 delivers verified 100 V ruggedness, guaranteed 6 kV/µs dv/dt immunity, and documented 245 mJ avalanche energy-critical for industrial motor drives and automotive subsystems where reliability under electrical stress is non-negotiable.

Availability

SPD35N10 is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and industrial power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SPD35N10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and quality certification including AEC-Q101 and CECC approval.

SPD35N10 belongs to Infineon's SIPMOS™ discrete power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial motor control, renewable energy inverters, and automotive subsystems.

FAQ

What is the maximum gate-source voltage rating for SPD35N10?

The absolute maximum gate-source voltage (V_GS) is ±20 V. Operation beyond this risks permanent gate oxide damage. Recommended drive is 10 V for full enhancement with margin; gate resistors must limit peak current during fast switching to avoid localized overstress.

Can SPD35N10 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (confirmed by R_DS(on) vs. T_j curve on Page 9) ensures inherent current sharing. Use matched gate drive layout, identical PCB copper area per device, and Kelvin source connections to minimize imbalance under high di/dt conditions.

Is the SPD35N10 RoHS-compliant and halogen-free?

Yes-Infineon confirms SPD35N10 complies with RoHS Directive 2011/65/EU and is halogen-free per IEC 61249-2-21. Full material declarations and compliance certificates are available via Infineon's product change notification (PCN) portal using ordering code Q67042-S4125.

Does SPD35N10 require a gate resistor for safe operation?

Yes-a series gate resistor (typically 5–22 Ω) is required to dampen ringing, limit peak gate current, and control dV/dt during turn-on/turn-off. Value selection depends on driver capability and target switching speed; lower values increase EMI risk but reduce switching loss, per gate charge (Q_g = 49–65 nC) and driver output impedance.

SPD35N10 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 35A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 44mOhm @ 26.4A, 10V

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1570 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 150W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

SPD35N10 FAQ

1.How can I place an order for SPD35N10 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPD35N10 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPD35N10 reliable?

The price and inventory of SPD35N10 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPD35N10 is usually 5 days.

3.What payment methods are accepted for SPD35N10?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPD35N10 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPD35N10?

SPD35N10 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPD35N10 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPD35N10?

For technical support, including SPD35N10 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPD35N10 requirements.

6.How does Aetrix verify that SPD35N10 is sourced from the original manufacturer or authorized distributors?

All SPD35N10 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPD35N10 meets industry standards.

7.What is the process for return or replacement of SPD35N10?

All SPD35N10 units undergo pre-shipment inspection (PSI). If there is an issue with SPD35N10, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPD35N10 part is unused and in its original packaging.

Return procedure for SPD35N10:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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