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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPD50N03S2-07

Name: SPD50N03S2-07
Brand: Infineon Technologies
SKU: SPD50N03S2-07
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPD50N03S2-07

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SPD50N03S2-07.pdf

Description:: MOSFET N-CH 30V 50A TO252-3

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Product details

Overview

SPD50N03S2-07 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™ power MOSFET rated for 30 V V_DS, 50 A continuous drain current at T_C = 25 °C, and 7.3 mΩ maximum R_DS(on) at V_GS = 10 V. It features avalanche rating, 6 kV/µs dv/dt capability, and 175 °C maximum junction temperature-designed for high-efficiency DC-DC converters in server power supplies.

For engineers reviewing the SPD50N03S2-07 datasheet, SPD50N03S2-07 pinout, SPD50N03S2-07 application, or SPD50N03S2-07 equivalent, key selection criteria include R_DS(on) vs. temperature stability, gate charge (Q_g = 46.5 nC max), thermal resistance (R_thJC = 1.1 K/W), and reverse diode performance (V_SD = 1.3 V max at 50 A).

Technical Context

This MOSFET employs a trench-based silicon process optimized for low gate charge × R_DS(on) figure-of-merit (FOM), enabling high-frequency switching with reduced conduction and switching losses. Its 175 °C rated junction supports operation in thermally constrained environments without derating penalties up to ambient extremes.

The device integrates a robust body diode with 41–51 ns reverse recovery time (t_rr) and 46–58 nC Q_rr, supporting synchronous rectification and hard-switched topologies. Avalanche energy rating (E_AS = 250 mJ) and dv/dt immunity (6 kV/µs) ensure reliability under transient overvoltage and inductive load switching.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage before avalanche onset; suitable for 24 V input bus systems with margin.
R_DS(on) max	7.3 mΩ at V_GS = 10 V, T_j = 25 °C - Enables <1.8 W conduction loss at 50 A, critical for high-current POL stages.
I_D cont	50 A at T_C = 25 °C - Validated continuous current with thermal path defined per PG-TO252-3-11 mounting on 6 cm² copper.
Q_g	46.5 nC max - Determines gate driver power requirement and switching speed in 100–500 kHz SMPS designs.
E_AS	250 mJ single-pulse - Withstands inductive energy dump without failure in motor drive or converter freewheeling phases.
t_r/t_f	36–54 ns / 25–38 ns - Supports fast turn-on/off with minimal overlap loss in hard-switched half-bridge configurations.
V_SD	1.3 V max at I_F = 50 A - Limits reverse conduction loss during dead-time in synchronous buck converters.

Pinout & Package

SPD50N03S2-07 is housed in PG-TO252-3-11 (DPAK) package: surface-mount, 3-terminal, exposed drain pad for thermal dissipation. Standard lead finish is matte tin, RoHS-compliant.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Reference node for gate drive; connects to low-side return path and PCB ground plane.
Pin 2 (Gate)	Control terminal (G)	High-impedance input requiring <10.5 nC total charge to reach plateau; sensitive to ESD.
Pin 3 (Drain)	Power output (D)	Exposed copper pad on underside-must be soldered to ≥6 cm² PCB copper area for R_thJC = 1.1 K/W.

Key Features

Feature	Design Value
Optimized FOM (Q_g × R_DS(on))	340 pC·Ω typical - Reduces combined switching + conduction loss in high-frequency DC-DC stages.
175 °C operating temperature	Junction-rated - Eliminates need for external thermal derating in sealed industrial enclosures.
Avalanche-rated (E_AS = 250 mJ)	Unclamped inductive switching validated - Enables robustness in motor gate drivers without snubbers.
dv/dt immune (6 kV/µs)	Tested per JEDEC JESD22-A114 - Prevents false turn-on in high-di/dt noise environments like inverters.
Low R_thJC (0.7–1.1 K/W)	Thermal path from die to case - Allows >100 W power dissipation with minimal heatsink in DPAK footprint.

Applications

Server VRM

Industrial Motor Drive

Use Scenario: Point-of-load regulation for CPU/GPU cores in 1U rack servers with 24 V input.

IC Role / Device Role / Timing Role: High-side synchronous rectifier in multiphase buck converter, switching at 300–600 kHz.

Use Value: 7.3 mΩ R_DS(on) and 46.5 nC Q_g enable >95% efficiency at 50 A while maintaining thermal headroom on compact PCBs.

Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers for factory automation actuators.

IC Role / Device Role / Timing Role: Low-side switch handling 50 A continuous current with 200 A pulsed capability during startup.

Use Value: 250 mJ E_AS and 6 kV/µs dv/dt rating prevent failure during inductive flyback and EMI-rich factory floor operation.

Telecom PSU

Automotive DC-DC Converter

Use Scenario: Primary-side switch in isolated forward converter for 48 V telecom rectifiers.

IC Role / Device Role / Timing Role: Main power switch operating at 200 kHz with 30 V blocking requirement.

Use Value: 1.1 K/W R_thJC allows direct mounting to aluminum baseplate, eliminating discrete heatsink in space-constrained modules.

Use Scenario: 12 V–48 V bidirectional DC-DC stage in 48 V mild-hybrid vehicle architectures.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side of dual-active-bridge topology.

Use Value: Body diode t_rr = 41–51 ns and Q_rr = 46–58 nC minimize reverse recovery loss during zero-voltage switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRL3803PbF	R_DS(on) = 8.0 mΩ @ 10 V; Q_g = 42 nC; no avalanche rating	Lacks E_AS spec and dv/dt immunity - unsuitable for inductive switching without protection	Prefer where cost sensitivity outweighs ruggedness requirements and thermal margin exists
STL110N3LLH6	R_DS(on) = 6.5 mΩ @ 10 V; Q_g = 52 nC; 175 °C rated; TO-220FP package	Larger through-hole package increases layout area and thermal path resistance vs. DPAK	Choose when higher current margin (110 A) justifies larger footprint and manual assembly

Compared with IRL3803PbF and STL110N3LLH6, SPD50N03S2-07 delivers optimal balance of low R_DS(on), controlled Q_g, and integrated ruggedness in surface-mount form-making it preferred for high-density, high-reliability 24–48 V power stages where board space and thermal management are constrained.

Availability

SPD50N03S2-07 is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, and telecom power supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for SPD50N03S2-07 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The OptiMOS™ product line targets high-efficiency power conversion systems-including server, telecom, and industrial SMPS-by optimizing R_DS(on), gate charge, and thermal performance in standard packages.

FAQ

What is the maximum safe operating temperature for SPD50N03S2-07?

The device is rated for continuous operation up to 175 °C junction temperature (T_j). This is validated across its full electrical specification range, including R_DS(on), V_GS(th), and E_AS. Thermal design must ensure T_j does not exceed this limit under worst-case load, ambient, and PCB cooling conditions.

Does SPD50N03S2-07 require a gate resistor for stability?

Yes-a gate resistor (typically 2.2–10 Ω) is recommended to dampen ringing caused by gate loop inductance and MOSFET input capacitance. The datasheet specifies switching times (e.g., t_r = 36–54 ns) using R_G = 6.8 Ω, confirming its use in standard gate driver interface design.

Can SPD50N03S2-07 replace older TO-220 MOSFETs in existing layouts?

No-it uses PG-TO252-3-11 (DPAK), which has different pad layout, thermal pad geometry, and pin spacing than TO-220. Direct replacement requires PCB redesign to accommodate the surface-mount footprint and optimize copper area for thermal conduction.

Is the body diode suitable for synchronous rectification?

Yes-the integrated body diode has characterized t_rr (41–51 ns) and Q_rr (46–58 nC), enabling predictable timing in synchronous buck topologies. However, external Schottky diodes may still be preferred in ultra-high-frequency (>1 MHz) designs where lower Q_rr is critical.

SPD50N03S2-07 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.3mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4V @ 85µA

Gate Charge (Qg) (Max) @ Vgs:: 46.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2170 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

SPD50N03S2-07 FAQ

1.How can I place an order for SPD50N03S2-07 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPD50N03S2-07 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPD50N03S2-07 reliable?

The price and inventory of SPD50N03S2-07 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPD50N03S2-07 is usually 5 days.

3.What payment methods are accepted for SPD50N03S2-07?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPD50N03S2-07 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPD50N03S2-07?

SPD50N03S2-07 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPD50N03S2-07 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPD50N03S2-07?

For technical support, including SPD50N03S2-07 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPD50N03S2-07 requirements.

6.How does Aetrix verify that SPD50N03S2-07 is sourced from the original manufacturer or authorized distributors?

All SPD50N03S2-07 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPD50N03S2-07 meets industry standards.

7.What is the process for return or replacement of SPD50N03S2-07?

All SPD50N03S2-07 units undergo pre-shipment inspection (PSI). If there is an issue with SPD50N03S2-07, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPD50N03S2-07 part is unused and in its original packaging.

Return procedure for SPD50N03S2-07:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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