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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPD50N03S207GBTMA1

Name: SPD50N03S207GBTMA1
Brand: Infineon Technologies
SKU: SPD50N03S207GBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPD50N03S207GBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SPD50N03S207GBTMA1.pdf

Description:: MOSFET N-CH 30V 50A TO252-3

Quantity:: RFQ Add To RFQ list

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Inventory:5,034

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Product details

Overview

SPD50N03S207GBTMA1 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in PG-TO252-3 (DPAK) package, rated for 30 V V_DS, 7.3 mΩ R_DS(on) at V_GS = 10 V and I_D = 50 A, with 175 °C maximum junction temperature and avalanche-rated operation. It delivers high-current switching in DC-DC converters, motor drives, and load switches where low conduction loss and robust thermal performance are critical.

For engineers reviewing the SPD50N03S207GBTMA1 datasheet, SPD50N03S207GBTMA1 pinout, SPD50N03S207GBTMA1 application, or SPD50N03S207GBTMA1 equivalent, key selection criteria include its 5.7–7.3 mΩ on-resistance range, 35–46.5 nC total gate charge, 136 W power dissipation at T_C = 25 °C, 250 mJ single-pulse avalanche energy, and dv/dt immunity up to 6 kV/µs - all validated under industrial-grade thermal and dynamic stress conditions.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 2nd generation trench technology, optimized for low gate charge × R_DS(on) figure-of-merit (FOM), enabling high-efficiency synchronous rectification and PWM switching. Its 175 °C rated junction supports extended thermal headroom in compact, unventilated enclosures.

The device features a fully avalanche-rated structure with EAS = 250 mJ (I_D = 50 A, V_DD = 25 V), and exhibits stable threshold voltage (2.1–4.0 V) and low reverse recovery charge (Q_rr = 46–58 nC) for reliable body diode commutation in half-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	30 V - Supports 24 V nominal bus systems with 25 % overvoltage margin for transient suppression
R_DS(on) max	7.3 mΩ @ V_GS = 10 V, I_D = 50 A - Enables ≤1.8 W conduction loss at full load in 50 A switch applications
I_D continuous	50 A @ T_C = 25 °C - Sustains high-current loads without forced cooling when mounted on ≥6 cm² copper area
Q_g total	35–46.5 nC - Determines gate driver current requirement (~1.2 A peak for 40 ns rise time with 33 Ω resistor)
E_AS	250 mJ - Withstands single inductive turn-off surges up to L·I²/2 = 250 mJ without failure
T_j max	175 °C - Allows operation in automotive engine bay or industrial motor control environments without derating
dv/dt immunity	6 kV/µs - Resists false triggering during fast voltage transients in noisy motor drive or SMPS circuits

Pinout & Package

Package: PG-TO252-3 (DPAK), surface-mount, single-drain-tab configuration with exposed drain pad for thermal conduction to PCB copper.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or low-side switch node; carries full load current
Pin 2 (Gate)	Control input (G)	High-impedance MOS gate requiring <100 nA leakage; driven by logic-level or dedicated gate driver
Pin 3 (Drain)	Power output (D)	Exposed metal tab - electrically and thermally connected to drain; must be soldered to ≥6 cm² copper pour

Key Features

Feature	Design Value
Optimized FOM (Q_g × R_DS(on))	~260–340 mΩ·nC - Reduces combined switching + conduction losses in high-frequency (>100 kHz) DC-DC stages
Superior R_thJC	0.7–1.1 K/W - Enables >100 W power handling with minimal junction-to-case temperature rise
Avalanche ruggedness	Rated for repetitive and single-pulse avalanche (E_AS = 250 mJ, E_AR = 13 mJ) - Eliminates need for external snubbers in inductive switching
Body diode Q_rr	46–58 nC - Low reverse recovery charge minimizes shoot-through risk and EMI in synchronous rectifiers

Applications

Automotive Body Control Module (BCM)

Industrial DC Motor Drive

Use Scenario: High-side load switching for headlights, fans, and solenoids in 12 V vehicle electrical systems.

IC Role / Device Role / Timing Role: N-channel power switch operating in high-side configuration with charge pump gate driver.

Use Value: 7.3 mΩ R_DS(on) limits resistive heating to <1.8 W at 50 A, supporting ASIL-B functional safety compliance via thermal derating margin.

Use Scenario: H-bridge low-side switching in 24 V brushed DC motor controllers for factory automation.

IC Role / Device Role / Timing Role: Fast-switching power stage element with 36–54 ns rise time and 6 kV/µs dv/dt immunity.

Use Value: 250 mJ avalanche rating absorbs inductive kickback during abrupt current interruption, eliminating external flyback diodes.

Server PSU OR-ing FET

Telecom Hot-Swap Controller

Use Scenario: Reverse-current blocking in redundant 48 V intermediate bus architectures with automatic failover.

IC Role / Device Role / Timing Role: Low-R_DS(on) OR-ing MOSFET controlled by dedicated hot-swap IC for sequencing and fault isolation.

Use Value: 5.7 mΩ typical R_DS(on) reduces insertion loss to <0.3 V at 50 A, improving system efficiency and thermal footprint.

Use Scenario: Inrush current limiting and overcurrent protection in 48 V line cards with live insertion capability.

IC Role / Device Role / Timing Role: Main pass transistor in hot-swap controller feedback loop, responding to current-sense amplifier signals.

Use Value: 175 °C T_jmax and 136 W P_tot allow sustained 50 A operation during 100 ms inrush events without thermal shutdown.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB070N03LGATMA1	Lower R_DS(on) (5.0 mΩ typ), higher Q_g (59 nC), same 30 V rating and PG-TO252-3 package	Better conduction loss but slower switching; suited for lower-frequency (<100 kHz), high-current applications	Select when minimizing I²R loss dominates over switching loss and gate drive capability permits higher Q_g
IRLML6344TRPBF	Higher R_DS(on) (22 mΩ), lower voltage rating (20 V), SOT-23 package, logic-level gate	Not suitable for 50 A loads; limited to <4 A continuous; used in space-constrained, low-power control paths	Only consider for prototyping or auxiliary bias rails - not a functional replacement for SPD50N03S207GBTMA1's primary power role

Compared with IPB070N03LGATMA1 and IRLML6344TRPBF, SPD50N03S207GBTMA1 offers balanced trade-offs: mid-range R_DS(on) and Q_g, full 50 A current capability, and industrial-grade avalanche robustness - making it optimal for production-grade 24–48 V power stages requiring reliability and thermal resilience.

Availability

SPD50N03S207GBTMA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial motor drives, server power supply OR-ing circuits, and telecom hot-swap applications requiring stable component supply across multi-year production cycles.

Supply support for SPD50N03S207GBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and quality certification to ISO/TS 16949 and AEC-Q101 standards.

This device belongs to Infineon's OptiMOS™ 2nd generation power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in 12–48 V industrial and automotive power systems.

FAQ

Is SPD50N03S207GBTMA1 suitable for high-side switching without a charge pump?

No. As an N-channel MOSFET with 2.1–4.0 V gate threshold and 30 V V_DS rating, it requires gate voltage exceeding the source potential - typically achieved using a bootstrap capacitor or integrated charge pump driver. Direct logic-level high-side drive is not feasible due to insufficient V_GS margin above the source rail.

What is the minimum PCB copper area required for full 50 A operation?

Infineon specifies a minimum of 6 cm² (40 mm × 40 mm × 1.5 mm FR4 board) of 70 µm thick copper on the drain pad side, vertically mounted without forced airflow. Thermal resistance drops from 100 K/W (unmounted) to 50 K/W under these conditions, enabling safe 50 A continuous current at T_C = 25 °C.

Does SPD50N03S207GBTMA1 have AEC-Q101 qualification?

Yes. SPD50N03S207GBTMA1 is AEC-Q101 qualified per Infineon's official documentation (document ID: 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SPD50N03S207GBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.3mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4V @ 85µA

Gate Charge (Qg) (Max) @ Vgs:: 46.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2170 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

SPD50N03S207GBTMA1 FAQ

1.How can I place an order for SPD50N03S207GBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPD50N03S207GBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPD50N03S207GBTMA1 reliable?

The price and inventory of SPD50N03S207GBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPD50N03S207GBTMA1 is usually 5 days.

3.What payment methods are accepted for SPD50N03S207GBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPD50N03S207GBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPD50N03S207GBTMA1?

SPD50N03S207GBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPD50N03S207GBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPD50N03S207GBTMA1?

For technical support, including SPD50N03S207GBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPD50N03S207GBTMA1 requirements.

6.How does Aetrix verify that SPD50N03S207GBTMA1 is sourced from the original manufacturer or authorized distributors?

All SPD50N03S207GBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPD50N03S207GBTMA1 meets industry standards.

7.What is the process for return or replacement of SPD50N03S207GBTMA1?

All SPD50N03S207GBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPD50N03S207GBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPD50N03S207GBTMA1 part is unused and in its original packaging.

Return procedure for SPD50N03S207GBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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