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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPD50N03S2L-06

Name: SPD50N03S2L-06
Brand: Infineon Technologies
SKU: SPD50N03S2L-06
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPD50N03S2L-06

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SPD50N03S2L-06.pdf

Description:: MOSFET N-CH 30V 50A TO252-3

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Product details

Overview

SPD50N03S2L-06 from Infineon Technologies is an N-channel enhancement-mode logic-level power MOSFET rated for 30 V V_DS, 6.4 mΩ R_DS(on) at V_GS = 10 V and 50 A continuous drain current at T_C = 25 °C, designed for high-efficiency DC-DC conversion and motor drive stages in industrial power supplies.

For engineers reviewing the SPD50N03S2L-06 datasheet, SPD50N03S2L-06 pinout, SPD50N03S2L-06 application, or SPD50N03S2L-06 equivalent, key selection criteria include gate threshold voltage (1.2–2.0 V), avalanche energy rating (250 mJ), thermal resistance (0.7–1.1 K/W junction-to-case), and logic-level gate drive compatibility with 3.3 V/5 V microcontrollers.

Technical Context

This OptiMOS™ device uses trench-gate silicon technology optimized for low gate charge × R_DS(on) figure-of-merit (FOM), enabling fast switching with reduced conduction and switching losses. Its 175 °C maximum junction temperature and avalanche-rated construction support robust operation under transient overloads and repetitive stress conditions.

The MOSFET features a built-in body diode with 50 A continuous forward current capability, 0.9–1.3 V forward voltage at 50 A, and 41–51 ns reverse recovery time - critical for synchronous rectification and freewheeling paths in buck converters and H-bridge motor drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V nominal bus systems and automotive 12 V/24 V applications.
R_DS(on) @ V_GS = 10 V	6.4 mΩ max - Enables <1.6 W conduction loss at 50 A, supporting high-current, low-voltage power stages.
I_D continuous @ T_C = 25 °C	50 A - Sustained output current capacity when mounted on heatsink; derates to ~35 A at T_C = 100 °C per curve.
E_AS	250 mJ single-pulse - Withstands inductive turn-off energy without failure, reducing need for external snubbers.
Q_g	68 nC max - Low total gate charge enables efficient 100–500 kHz switching with standard gate drivers (e.g., IR2110, UCC27531).
R_thJC	1.1 K/W max - Junction-to-case thermal resistance allows direct mounting to heatsinks; supports >100 W power dissipation with adequate cooling.
V_GS(th)	1.2–2.0 V - Logic-level threshold ensures full enhancement with 3.3 V MCU GPIOs and eliminates need for level-shifting.

Pinout & Package

SPD50N03S2L-06 is housed in PG-TO252-3-11 (DPAK) surface-mount package with exposed drain pad for thermal and electrical connection. The package features three terminals: Gate (G), Source (S), and Drain (D), where Drain is internally connected to the large copper tab on the bottom side.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate control input	Accepts logic-level voltage (0–10 V); requires <68 nC charge for full turn-on; sensitive to ESD (±20 V max rating).
S	Source reference node	Common return path for load current; ties to ground or low-side switch node; defines V_GS reference.
D	Drain power terminal	High-current output node; electrically and thermally connected to PCB copper pour; carries full load current and dissipates heat.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) ≤ 2.0 V enables direct interface with 3.3 V/5 V microcontrollers and FPGA I/O without gate driver ICs.
Avalanche rated	250 mJ single-pulse E_AS ensures reliable operation during inductive switching transients without external clamping.
Low R_DS(on) × Q_g FOM	~430 mΩ·nC - Optimized trade-off between conduction loss and switching loss for high-frequency SMPS designs.
175 °C operating temperature	Extended thermal range supports sealed enclosures and high-ambient environments (e.g., industrial motor drives, solar inverters).
dv/dt ruggedness	6 kV/µs - Resists false turn-on due to high-speed voltage transients in noisy power systems.

Applications

Industrial Motor Control

DC-DC Converters

Use Scenario: Half-bridge or H-bridge driver for 24 V BLDC fans and pumps in HVAC and factory automation.

IC Role / Device Role / Timing Role: Low-side and high-side switching element; handles 50 A peak currents with <10 ns rise/fall times.

Use Value: 6.4 mΩ R_DS(on) reduces conduction loss by >30% vs. legacy 10 mΩ MOSFETs, improving system efficiency at full load.

Use Scenario: Synchronous rectifier in 24 V input, 5 V/20 A isolated flyback or LLC converter for telecom power supplies.

IC Role / Device Role / Timing Role: Secondary-side power switch replacing Schottky diodes; driven by transformer-coupled or controller-synchronized gate signal.

Use Value: Body diode V_SD ≤ 1.3 V and Q_rr ≤ 58 nC minimize reverse recovery loss and improve light-load efficiency.

Automotive Body Electronics

Power Distribution Units

Use Scenario: Load switch for 12 V battery-fed modules including seat controls, mirror actuators, and lighting drivers.

IC Role / Device Role / Timing Role: High-current electronic fuse and soft-start switch; controlled via CAN/LIN-linked MCU GPIO.

Use Value: Logic-level V_GS(th) ensures full enhancement at 3.3 V MCU outputs; 175 °C rating supports under-hood ambient temperatures.

Use Scenario: Solid-state replacement for mechanical relays in 24 V industrial PDUs and programmable logic controller (PLC) output modules.

IC Role / Device Role / Timing Role: Main power switch with integrated overcurrent and thermal protection via external monitoring circuitry.

Use Value: Avalanche rating (250 mJ) and dv/dt immunity (6 kV/µs) prevent failure during inductive load disconnection events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLZ44N	R_DS(on) = 25 mΩ @ V_GS = 5 V; lower current rating (47 A); TO-220 package.	Larger footprint and higher thermal resistance (R_thJC ≈ 2.5 K/W); unsuitable for high-density SMD layouts.	Prefer SPD50N03S2L-06 for space-constrained, high-current SMD designs requiring <10 mΩ R_DS(on).
STP55NF06L	R_DS(on) = 12 mΩ @ V_GS = 5 V; 60 V V_DS; TO-220 package; higher gate charge (85 nC).	Higher voltage rating adds margin but increases cost and capacitance; less optimal for 24 V systems.	Choose SPD50N03S2L-06 when optimizing for 24–30 V systems needing lowest R_DS(on) and smallest SMD footprint.

Compared with IRLZ44N and STP55NF06L, SPD50N03S2L-06 delivers superior current density (50 A in DPAK), lower conduction loss (6.4 mΩ), and better thermal performance (R_thJC ≤ 1.1 K/W), making it ideal for compact, high-efficiency industrial and automotive power switches.

Availability

SPD50N03S2L-06 is available at Aetrix Electronics and suitable for industrial motor control, DC-DC power conversion, and automotive body electronics requiring stable component supply and long-term production continuity.

Supply support for SPD50N03S2L-06 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This device belongs to the OptiMOS™ family of low-voltage power MOSFETs engineered for high-current, high-efficiency switching in 12–30 V systems such as motor drives, server VRMs, and battery-powered equipment.

FAQ

What is the maximum safe operating temperature for SPD50N03S2L-06?

The device supports continuous operation up to 175 °C junction temperature. Its thermal resistance (R_thJC ≤ 1.1 K/W) and avalanche rating allow sustained use in sealed enclosures or high-ambient environments like engine bays and industrial cabinets, provided PCB copper area meets Infineon's 6 cm² minimum recommendation.

Can SPD50N03S2L-06 be driven directly by a 3.3 V microcontroller GPIO?

Yes - its gate threshold voltage (V_GS(th)) ranges from 1.2 V to 2.0 V, and it achieves full enhancement at V_GS = 4.5 V. At 3.3 V, R_DS(on) rises to ~9.2 mΩ (max), still delivering usable performance for moderate-current loads (<30 A) without external level-shifting.

Does SPD50N03S2L-06 include a body diode, and what are its key parameters?

Yes - it integrates a fast-recovery epitaxial body diode rated for 50 A continuous forward current. Key specs include V_SD = 0.9–1.3 V at 50 A, t_rr = 41–51 ns, and Q_rr = 46–58 nC, making it suitable for synchronous rectification and freewheeling in buck and half-bridge topologies.

How does the avalanche rating impact real-world reliability?

The 250 mJ single-pulse avalanche energy rating means the MOSFET can absorb defined inductive energy spikes (e.g., from relay coil de-energization or motor phase commutation) without failure. This eliminates the need for external TVS or RC snubbers in many industrial and automotive applications, simplifying layout and improving long-term field reliability.

SPD50N03S2L-06 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 85µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2530 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

SPD50N03S2L-06 FAQ

1.How can I place an order for SPD50N03S2L-06 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPD50N03S2L-06 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPD50N03S2L-06 reliable?

The price and inventory of SPD50N03S2L-06 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPD50N03S2L-06 is usually 5 days.

3.What payment methods are accepted for SPD50N03S2L-06?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPD50N03S2L-06 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPD50N03S2L-06?

SPD50N03S2L-06 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPD50N03S2L-06 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPD50N03S2L-06?

For technical support, including SPD50N03S2L-06 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPD50N03S2L-06 requirements.

6.How does Aetrix verify that SPD50N03S2L-06 is sourced from the original manufacturer or authorized distributors?

All SPD50N03S2L-06 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPD50N03S2L-06 meets industry standards.

7.What is the process for return or replacement of SPD50N03S2L-06?

All SPD50N03S2L-06 units undergo pre-shipment inspection (PSI). If there is an issue with SPD50N03S2L-06, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPD50N03S2L-06 part is unused and in its original packaging.

Return procedure for SPD50N03S2L-06:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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