Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPD50N03S2L06GBTMA1

Name: SPD50N03S2L06GBTMA1
Brand: Infineon Technologies
SKU: SPD50N03S2L06GBTMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SPD50N03S2L06GBTMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SPD50N03S2L06GBTMA1.pdf

Description:: MOSFET N-CH 30V 50A TO252-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:8,327

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SPD50N03S2L06GBTMA1 from Infineon Technologies is an N-channel enhancement-mode logic-level power MOSFET in TO-252 (D-Pak) package, rated for 30 V V_DS, 6.4 mΩ R_DS(on) at V_GS = 10 V and I_D = 50 A, with 175 °C maximum junction temperature and avalanche-rated operation. It delivers high current handling and low gate charge × R_DS(on) figure-of-merit for efficient switching in DC-DC converters and motor control.

For engineers reviewing the SPD50N03S2L06GBTMA1 datasheet, SPD50N03S2L06GBTMA1 pinout, SPD50N03S2L06GBTMA1 application, or SPD50N03S2L06GBTMA1 equivalent, key selection criteria include R_DS(on) at 4.5 V and 10 V, thermal resistance (R_thJC = 0.7–1.1 K/W), avalanche energy (E_AS = 250 mJ), diode forward voltage (V_SD = 0.9–1.3 V), and dv/dt rating (6 kV/µs).

Technical Context

This OptiMOS™ power transistor uses trench-based silicon technology optimized for low conduction and switching losses. Its logic-level gate drive (V_GS(th) = 1.2–2.0 V) enables direct interfacing with 3.3 V and 5 V microcontrollers without level-shifting circuitry.

The device integrates a robust body diode with t_rr = 41–51 ns and Q_rr = 46–58 nC, supporting synchronous rectification and freewheeling in hard-switched topologies. Thermal design is supported by validated R_thJC and transient Z_thJC curves for PCB-level thermal modeling.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage; defines safe operating range in 24 V automotive and industrial bus applications.
R_DS(on) @ V_GS = 10 V	4.7–6.4 mΩ - Low on-resistance enables <1 W conduction loss at 50 A, critical for high-efficiency power stages.
R_DS(on) @ V_GS = 4.5 V	6.8–9.2 mΩ - Confirmed logic-level operation; supports direct drive from standard GPIOs without gate drivers.
I_D (continuous)	50 A @ T_C = 25 °C - High current capability suitable for primary-side switches in 100–300 W SMPS and BLDC motor phase legs.
E_AS	250 mJ - Avalanche-rated for unclamped inductive switching; eliminates need for external snubbers in relay driving or solenoid control.
dv/dt rating	6 kV/µs - Robust against parasitic turn-on in high-noise environments such as motor drives and industrial inverters.
T_j max	175 °C - Extended thermal margin allows reliable operation in sealed enclosures or under sustained load conditions.

Pinout & Package

Package: PG-TO252-3 (D-Pak), surface-mount, single-drain tab configuration with exposed drain pad for thermal conduction to PCB copper area.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or current-sense resistor; carries full load current return path.
Pin 2 (Gate)	Control input	High-impedance MOSFET gate; requires <8 nC total gate charge for full turn-on; sensitive to ESD (±20 V absolute max).
Pin 3 (Drain)	Power output	Connected to high-side rail or inductive load; electrically and thermally tied to large copper pour via exposed tab.

Key Features

Feature	Design Value
Logic-level gate threshold	V_GS(th) = 1.2–2.0 V ensures compatibility with 3.3 V MCU outputs and reduces gate driver complexity.
Low gate charge × R_DS(on)	Q_g = 52–68 nC and R_DS(on) = 4.7 mΩ yield FOM < 320 mΩ·nC - minimizes combined switching + conduction loss.
Superior thermal resistance	R_thJC = 0.7–1.1 K/W enables >100 W power dissipation with minimal heatsink when mounted on ≥6 cm² copper.
Body diode performance	V_SD = 0.9–1.3 V and t_rr = 41–51 ns support efficient freewheeling with low reverse recovery loss.

Applications

Automotive Body Control Module (BCM)

Industrial DC-DC Converter

Use Scenario: Driving 12 V solenoids, fans, and lamps in centralized vehicle power distribution units.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling load current up to 50 A with PWM dimming or soft-start sequencing.

Use Value: Avalanche rating absorbs inductive kickback without snubbers; 175 °C rating ensures reliability in under-hood ambient temperatures.

Use Scenario: Primary-side synchronous rectifier or secondary-side switch in isolated 24 V to 5/3.3 V buck-derived converters.

IC Role / Device Role / Timing Role: Power switch operating at 100–500 kHz with low R_DS(on) and fast switching (t_r/t_f < 30 ns) to minimize losses.

Use Value: 4.5 V logic-level drive enables direct connection to controller ICs; low Q_g reduces gate driver power consumption.

BLDC Motor Phase Leg

Server PSU OR-ing Circuit

Use Scenario: Half-bridge leg in 3-phase brushless DC motor controllers for HVAC blowers and pumps.

IC Role / Device Role / Timing Role: Low-side switch in 6-step commutation, conducting continuous 30–50 A with 100% duty cycle capability at elevated case temperature.

Use Value: R_thJC ≤ 1.1 K/W and 175 °C T_j max allow sustained high-current operation without thermal derating in compact modules.

Use Scenario: OR-ing diode replacement in redundant 12 V server power supply backplanes.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diodes to reduce forward drop and improve efficiency at 40–60 A per rail.

Use Value: V_SD = 0.9 V and low R_DS(on) cut conduction loss by >60% vs. 0.45 V Schottky; integrated body diode enables bidirectional control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB052N03LGATMA1	Same V_DS (30 V), lower R_DS(on) (5.2 mΩ @ 10 V), higher Q_g (78 nC), same TO-252 package.	Better conduction loss but slower switching; suited for lower-frequency (<100 kHz) high-current applications.	Prefer when thermal budget is tighter than switching speed requirement.
STL130N3LLH6	30 V, R_DS(on) = 5.5 mΩ @ 10 V, Q_g = 55 nC, same TO-252-3, but only rated to 150 °C T_j.	Limited high-temperature operation; not qualified for 175 °C automotive or industrial environments.	Select only where ambient temperature remains below 125 °C and extended thermal margin is unnecessary.

Compared with IPB052N03LGATMA1 and STL130N3LLH6, SPD50N03S2L06GBTMA1 offers balanced switching-conduction trade-off and full 175 °C qualification-making it optimal for thermally constrained, high-reliability applications where both efficiency and ruggedness are required.

Availability

SPD50N03S2L06GBTMA1 is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC-DC converters, and BLDC motor drives requiring stable component supply across multi-year production cycles.

Supply support for SPD50N03S2L06GBTMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ 30 V logic-level power MOSFET product line, engineered for high-current, high-efficiency switching in space-constrained and thermally demanding applications including automotive, server, and industrial power systems.

FAQ

Is SPD50N03S2L06GBTMA1 suitable for 3.3 V microcontroller gate drive?

Yes. With V_GS(th) = 1.2–2.0 V and guaranteed R_DS(on) of 9.2 mΩ at V_GS = 4.5 V, it fully turns on using standard 3.3 V GPIOs. Gate charge is low (Q_g = 52–68 nC), enabling fast switching without external drivers in moderate-frequency designs.

What is the maximum continuous drain current at 100 °C case temperature?

Per the ID vs. TC curve on page 3 of the datasheet, continuous drain current drops to approximately 32 A at T_C = 100 °C. This derating reflects thermal limits-not electrical failure-and assumes proper PCB copper area (≥6 cm²) and no forced airflow.

Does this MOSFET have avalanche energy rating, and is it production-tested?

Yes, E_AS = 250 mJ (single-pulse, I_D = 50 A, V_DD = 25 V). Per datasheet footnote 2, avalanche capability is defined by design and not subject to 100% production test-but it is qualified per AEC-Q101 and used in automotive-grade applications.

Can SPD50N03S2L06GBTMA1 replace a standard 30 V Schottky diode in OR-ing applications?

Yes, its integrated body diode has V_SD = 0.9–1.3 V and t_rr = 41–51 ns, enabling active OR-ing with lower forward loss and controllable turn-off. Unlike passive diodes, it supports reverse current blocking and dynamic load sharing when paired with appropriate gate control.

SPD50N03S2L06GBTMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 85µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2530 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3

SPD50N03S2L06GBTMA1 FAQ

1.How can I place an order for SPD50N03S2L06GBTMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPD50N03S2L06GBTMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPD50N03S2L06GBTMA1 reliable?

The price and inventory of SPD50N03S2L06GBTMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPD50N03S2L06GBTMA1 is usually 5 days.

3.What payment methods are accepted for SPD50N03S2L06GBTMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPD50N03S2L06GBTMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPD50N03S2L06GBTMA1?

SPD50N03S2L06GBTMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPD50N03S2L06GBTMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPD50N03S2L06GBTMA1?

For technical support, including SPD50N03S2L06GBTMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPD50N03S2L06GBTMA1 requirements.

6.How does Aetrix verify that SPD50N03S2L06GBTMA1 is sourced from the original manufacturer or authorized distributors?

All SPD50N03S2L06GBTMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPD50N03S2L06GBTMA1 meets industry standards.

7.What is the process for return or replacement of SPD50N03S2L06GBTMA1?

All SPD50N03S2L06GBTMA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPD50N03S2L06GBTMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPD50N03S2L06GBTMA1 part is unused and in its original packaging.

Return procedure for SPD50N03S2L06GBTMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…