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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPD50N03S2L06T

Name: SPD50N03S2L06T
Brand: Infineon Technologies
SKU: SPD50N03S2L06T
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPD50N03S2L06T

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SPD50N03S2L06T.pdf

Description:: MOSFET N-CH 30V 50A TO252-3

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Product details

Overview

SPD50N03S2L06T from Infineon Technologies is an N-channel enhancement-mode logic-level power MOSFET in PG-TO252-3-11 package, rated for 30 V V_DS, 6.4 mΩ R_DS(on) at V_GS = 10 V and 50 A continuous drain current at T_C = 25 °C. It features avalanche rating, 175 °C maximum junction temperature, and optimized gate charge × R_DS(on) figure-of-merit for high-efficiency DC-DC and motor drive switching.

For engineers reviewing the SPD50N03S2L06T datasheet, SPD50N03S2L06T pinout, SPD50N03S2L06T application, or SPD50N03S2L06T equivalent, key selection criteria include its 4.5 V logic-level gate threshold (V_GS(th) = 1.2–2.0 V), low 0.7 K/W typical thermal resistance (R_thJC), and 250 mJ single-pulse avalanche energy - critical for robustness in automotive body control and industrial power supply designs.

Technical Context

This OptiMOS™ device uses trench-gate silicon technology to achieve low on-resistance with fast switching dynamics: C_iss = 1900–2530 pF, Q_g = 52–68 nC, and t_r/t_f = 19–29 ns / 24–36 ns at I_D = 50 A. Its gate plateau voltage is 3.2 V, enabling stable turn-on under partial-drive conditions.

The integrated body diode exhibits V_SD = 0.9–1.3 V at I_F = 50 A and t_rr = 41–51 ns with Q_rr = 46–58 nC, supporting synchronous rectification and freewheeling in buck converters and H-bridge motor drivers without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage compatible with 24 V automotive and industrial bus systems
R_DS(on) @ V_GS = 10 V	6.4 mΩ max - Enables <1.6 W conduction loss at 50 A, reducing heatsink requirements
I_D continuous @ T_C = 25 °C	50 A - Supports high-current load switching without derating in PCB-mounted thermal configurations
E_AS	250 mJ - Withstands single-pulse inductive energy surges common in relay/motor coil snubbing
V_GS(th)	1.2–2.0 V - Fully enhances with standard 3.3 V or 5 V logic outputs, eliminating level-shifter need
R_thJC	0.7 K/W typ - Delivers >100 W effective power dissipation capability when mounted on copper-clad PCB
Q_g	52–68 nC - Balances switching speed and gate driver loading for 100–500 kHz SMPS operation

Pinout & Package

Package: PG-TO252-3-11 (DPAK), surface-mount, exposed drain pad for thermal conduction. Standard 3-pin configuration with G-S-D terminal assignment.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Current return path for channel conduction	Internally bonded to substrate; connects directly to PCB ground plane for low-inductance return
Pin 2 (Gate)	Control electrode for channel modulation	High-impedance input requiring <100 nA leakage; sensitive to ESD but logic-level compatible
Pin 3 (Drain)	Main current-carrying terminal (connected to die backside)	Exposed metal pad - must be soldered to ≥6 cm² copper area for specified R_thJC and P_tot = 136 W

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced down to 4.5 V V_GS, compatible with microcontroller GPIOs and low-voltage PWM controllers
Avalanche-rated	Guaranteed 250 mJ single-pulse energy handling without failure - eliminates need for external clamping in inductive loads
175 °C maximum junction temperature	Enables operation in under-hood automotive environments and sealed industrial enclosures without forced cooling
Low gate charge × R_DS(on) FOM	Optimized trade-off between switching loss and conduction loss for high-frequency (>200 kHz) power conversion stages
dv/dt ruggedness	Rated to 6 kV/µs - suppresses false turn-on during fast transient voltage spikes in noisy motor drive environments

Applications

Automotive Body Control Module (BCM)

Industrial DC-DC Converter

Use Scenario: Switching 12 V/24 V loads including lamps, solenoids, and HVAC actuators in vehicle chassis electronics.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlled by CAN/LIN microcontroller outputs.

Use Value: 1.2–2.0 V V_GS(th) ensures reliable turn-on with 3.3 V MCU I/O; 175 °C rating supports under-dash mounting without heatsinks.

Use Scenario: Primary-side synchronous rectifier or secondary-side switch in isolated 48 V-to-12 V telecom or server PSUs.

IC Role / Device Role / Timing Role: High-efficiency, high-current switching element in synchronous buck or active clamp forward topologies.

Use Value: 6.4 mΩ R_DS(on) and 52–68 nC Q_g enable >95% efficiency at 50 A output while maintaining <100 ns total switching time.

Brushless DC Motor Driver

Power Distribution Unit (PDU)

Use Scenario: Half-bridge leg in 24 V BLDC drives for fans, pumps, and power tools.

IC Role / Device Role / Timing Role: Low-side switch with fast freewheeling via integrated body diode (t_rr = 41–51 ns).

Use Value: 250 mJ E_AS withstands commutation-induced inductive kickback; dv/dt rating prevents spurious turn-on during phase transitions.

Use Scenario: Electronic fuse and load switch in 24 V battery-powered equipment with overcurrent and short-circuit protection.

IC Role / Device Role / Timing Role: Main power path switch with built-in thermal shutdown margin up to 175 °C.

Use Value: 50 A continuous rating and 0.7 K/W R_thJC allow direct PCB thermal management - no discrete thermal sensor required for basic overload detection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRLZ44NPBF	R_DS(on) = 22 mΩ @ V_GS = 5 V; lower current rating (49 A); TO-220 package	Larger footprint and higher R_thJA; unsuitable for space-constrained SMD layouts	Choose only if through-hole assembly is mandated and thermal budget allows higher conduction loss
STL120N3LLH6	R_DS(on) = 3.3 mΩ @ V_GS = 10 V; same DPAK package; higher gate charge (85 nC)	Better conduction loss but slower switching; requires stronger gate driver for >200 kHz operation	Select when minimizing I²R loss dominates over switching loss - e.g., low-frequency (<100 kHz), high-duty-cycle applications

Compared with IRLZ44NPBF and STL120N3LLH6, SPD50N03S2L06T delivers optimal balance of low R_DS(on), moderate Q_g, and industry-leading thermal performance in DPAK - making it preferred for compact, high-reliability 24 V power stages where both efficiency and surge robustness matter.

Availability

SPD50N03S2L06T is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC-DC converters, brushless DC motor drivers, and power distribution units requiring stable component supply across multi-year production cycles.

Supply support for SPD50N03S2L06T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

This device belongs to the OptiMOS™ power transistor product line, engineered specifically for high-current, high-reliability switching in automotive and industrial power systems where thermal resilience and avalanche ruggedness are mandatory.

FAQ

What is the maximum safe operating temperature for SPD50N03S2L06T?

The device is rated for continuous operation up to T_j = 175 °C, verified per JEDEC JESD22-A108. Derating begins above T_C = 100 °C per the ID vs. TC curve on page 2 of the datasheet; full 50 A current is guaranteed only when case temperature remains ≤25 °C unless heatsinking is enhanced.

Does SPD50N03S2L06T require a gate resistor for stability?

Yes - a series gate resistor (typically 3.6 Ω, as used in the datasheet's dynamic test conditions) is recommended to dampen ringing and limit peak gate current. Without it, parasitic L_GS/C_iss resonance can cause overshoot exceeding ±20 V V_GS rating, risking oxide damage during fast switching.

Can SPD50N03S2L06T replace a standard 30 V MOSFET in existing designs?

Yes, provided the PCB layout accommodates the PG-TO252-3-11 footprint and thermal copper area (≥6 cm²). Its logic-level gate enables drop-in replacement for older 10 V gate-threshold devices, but verify that the lower R_DS(on) does not increase peak current stress on upstream components like current-sense shunts or gate drivers.

Is the body diode suitable for reverse recovery in hard-switched topologies?

The body diode has t_rr = 41–51 ns and Q_rr = 46–58 nC, making it usable in non-critical freewheeling roles. However, for ZVS or high-frequency synchronous rectification, a dedicated Schottky or GaN FET is preferred due to its soft recovery characteristic and lack of minority-carrier storage delay.

SPD50N03S2L06T Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 6.4mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 2V @ 85µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2530 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

SPD50N03S2L06T FAQ

1.How can I place an order for SPD50N03S2L06T through Aetrix?

Please submit a Request for Quotation (RFQ) for SPD50N03S2L06T on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPD50N03S2L06T reliable?

The price and inventory of SPD50N03S2L06T are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPD50N03S2L06T is usually 5 days.

3.What payment methods are accepted for SPD50N03S2L06T?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPD50N03S2L06T transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPD50N03S2L06T?

SPD50N03S2L06T orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPD50N03S2L06T order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPD50N03S2L06T?

For technical support, including SPD50N03S2L06T datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPD50N03S2L06T requirements.

6.How does Aetrix verify that SPD50N03S2L06T is sourced from the original manufacturer or authorized distributors?

All SPD50N03S2L06T products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPD50N03S2L06T meets industry standards.

7.What is the process for return or replacement of SPD50N03S2L06T?

All SPD50N03S2L06T units undergo pre-shipment inspection (PSI). If there is an issue with SPD50N03S2L06T, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPD50N03S2L06T part is unused and in its original packaging.

Return procedure for SPD50N03S2L06T:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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