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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPD50N06S2L-13

Name: SPD50N06S2L-13
Brand: Infineon Technologies
SKU: SPD50N06S2L-13
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPD50N06S2L-13

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: SPD50N06S2L-13.pdf

Description:: MOSFET N-CH 55V 50A TO252-3

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Product details

Overview

SPD50N06S2L-13 from Infineon Technologies is an N-channel logic-level enhancement-mode power MOSFET in TO-252 (DPAK) package, rated for 55 V V_DS, 50 A continuous drain current at T_C = 25 °C, and 12.7 mΩ R_DS(on) at V_GS = 10 V. It features avalanche rating (240 mJ single-pulse), dv/dt ruggedness (6 kV/µs), and integrated body diode with 50 A forward current capability - deployed in DC-DC synchronous rectification and motor drive half-bridge legs.

For engineers reviewing the SPD50N06S2L-13 datasheet, SPD50N06S2L-13 pinout, SPD50N06S2L-13 application, or SPD50N06S2L-13 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, transient thermal impedance Z_thJC, safe operating area (SOA) at 100 µs pulse width, and reverse recovery charge Q_rr of 99–125 nC for high-frequency switching integrity.

Technical Context

This OptiMOS™ device uses trench-gate superjunction technology optimized for low conduction loss and fast switching in 12 V–48 V industrial and automotive power stages. Its logic-level gate threshold (1.2–2.0 V) enables direct drive from microcontrollers without level-shifting, while its 6 kV/µs dv/dt rating ensures robustness against parasitic turn-on in high-side configurations.

The MOSFET integrates a monolithic body diode with 0.9–1.3 V forward voltage at 50 A and 52–65 ns reverse recovery time - critical for minimizing commutation losses in synchronous buck converters and H-bridge motor control where shoot-through immunity and diode softness matter.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	55 V - supports 48 V nominal bus systems with 15% margin for transients
R_DS(on) @ V_GS = 10 V	12.7 mΩ max - delivers ≤ 32 W conduction loss at 50 A in TO-252 package
R_DS(on) @ V_GS = 4.5 V	16.7 mΩ max - enables efficient operation with 3.3 V/5 V logic-level MCU outputs
Q_g Total	69 nC max - determines gate driver power requirement and switching speed trade-off
E_AS Single-Pulse	240 mJ - withstands inductive energy during unclamped inductive switching events
Q_rr	125 nC max - quantifies stored charge in body diode affecting cross-conduction loss
Z_thJC	1.1 K/W max - defines junction-to-case thermal resistance for heatsink sizing

Pinout & Package

SPD50N06S2L-13 is housed in a surface-mount TO-252-3 (DPAK) package with exposed drain pad for thermal performance. The package has three terminals: Gate (G), Source (S), and Drain (D), with Drain connected to the large copper tab on the bottom side.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Receives logic-level voltage (0–10 V); input capacitance C_iss = 2300 pF max affects drive strength requirements
Source (S)	Reference node for gate drive and current return path	Common connection point for low-side switch configuration; ties to PCB ground plane
Drain (D)	Main current output terminal	Connected to high-side load or switching node; electrically tied to exposed metal tab for thermal conduction

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) = 1.2–2.0 V enables direct interface with 3.3 V/5 V MCUs without gate drivers
Avalanche-rated	240 mJ single-pulse E_AS allows reliable operation under inductive switching stress without external snubbers
dv/dt ruggedness	6 kV/µs rating prevents false turn-on in high dV/dt environments like motor phase-legs
Low Q_gd/Q_g ratio	Q_gd = 26 nC max / Q_g = 69 nC max yields Miller plateau control for stable hard-switching
Optimized body diode	Q_rr = 125 nC and t_rr = 65 ns support efficient synchronous rectification up to 500 kHz

Applications

Motor Drive Half-Bridge

Synchronous Buck Converter

Use Scenario: 24 V BLDC motor control with PWM-driven upper/lower FETs in 3-phase inverter leg.

IC Role / Device Role / Timing Role: Low-side switch handling continuous 50 A phase current with fast turn-off to minimize shoot-through risk.

Use Value: 12.7 mΩ R_DS(on) reduces I²R loss by >30% vs. legacy 20 mΩ MOSFETs; 6 kV/µs dv/dt rating prevents spurious turn-on during high-side switching transitions.

Use Scenario: 12 V input to 3.3 V/5 V output point-of-load regulator in industrial PLC backplane.

IC Role / Device Role / Timing Role: Synchronous rectifier replacing Schottky diode to improve efficiency at 200–500 kHz switching frequency.

Use Value: Body diode Q_rr = 125 nC and V_SD = 0.9 V enable >92% efficiency at 30 A load; low C_oss = 540 pF minimizes switching loss during dead-time transitions.

Automotive DC-DC Converter

Industrial Power Supply OR-ing

Use Scenario: 48 V–12 V bidirectional DC-DC stage in mild-hybrid vehicle architecture.

IC Role / Device Role / Timing Role: High-current, high-reliability switch in synchronous rectifier position with reverse polarity protection.

Use Value: Avalanche rating (240 mJ) handles load-dump transients per ISO 7637-2; -55 °C to +175 °C T_j range meets AEC-Q101 stress test requirements.

Use Scenario: Redundant 24 V power rail OR-ing in factory automation controller with hot-swap capability.

IC Role / Device Role / Timing Role: Low-loss pass element controlling current direction between parallel supplies using ideal diode control.

Use Value: R_DS(on) = 12.7 mΩ limits forward voltage drop to <300 mV at 25 A, reducing heat generation vs. discrete diode solutions; logic-level gate simplifies control circuitry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF540NPBF	R_DS(on) = 44 mΩ @ 10 V; V_GS(th) = 2–4 V; no avalanche rating	Lower current density; unsuitable for repetitive avalanche or high-speed synchronous rectification	Use only in low-frequency, non-critical linear or switching applications where cost dominates reliability
STP55NF06L	R_DS(on) = 14 mΩ @ 10 V; Q_g = 72 nC; avalanche rated (200 mJ)	Higher gate charge increases driver loss; slightly lower E_AS margin for aggressive inductive loads	Acceptable substitute where board layout accommodates higher gate drive power and SOA margin is verified

Compared with IRF540NPBF and STP55NF06L, SPD50N06S2L-13 offers superior R_DS(on) × Q_g figure-of-merit (873 mΩ·nC vs. 3168 and 1008), tighter V_GS(th) distribution for predictable turn-on, and highest E_AS rating - making it optimal for high-efficiency, high-reliability 48 V power stages.

Availability

SPD50N06S2L-13 is available at Aetrix Electronics and suitable for motor drives, synchronous buck converters, and automotive DC-DC modules requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from authorized channels.

Supply support for SPD50N06S2L-13 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ power transistor product line, engineered specifically for high-efficiency, high-current switching in 12 V–48 V industrial and automotive power conversion systems.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

At T_C = 100 °C, the continuous drain current is derated to approximately 35 A, based on the ID = f(T_C) curve on Page 2 of the datasheet. This reflects thermal limitation of the TO-252 package, not silicon capability - the die itself can sustain higher current if thermally managed via enhanced PCB copper area or heatsinking.

Does SPD50N06S2L-13 have a qualified AEC-Q101 rating?

No - SPD50N06S2L-13 is not AEC-Q101 qualified. While it operates across -55 °C to +175 °C and meets automotive-grade thermal and avalanche specs, Infineon does not list it in their AEC-Q101 qualified portfolio. For automotive safety-critical applications, use the pin-compatible AEC-Q101 qualified variant SPD50N06S2-13.

Can this MOSFET be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (see Page 6 R_DS(on) = f(T_j) curve) ensures inherent current sharing when paralleled. However, layout symmetry (matched gate and source inductance) and individual gate resistors (≥10 Ω) are required to suppress oscillation and ensure balanced dynamic current division during switching.

What is the recommended minimum gate resistor value for 100 kHz switching?

For 100 kHz operation with 50 A peak current, a gate resistor of 4.7 Ω is recommended to limit peak gate current to ~2.1 A while maintaining <20 ns rise/fall times. This balances switching loss reduction against EMI and gate driver thermal stress - confirmed by the td(on)/tr/tf data (Page 3) and Q_g = 69 nC specification.

SPD50N06S2L-13 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 50A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 12.7mOhm @ 34A, 10V

Vgs(th) (Max) @ Id:: 2V @ 80µA

Gate Charge (Qg) (Max) @ Vgs:: 69 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 136W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-TO252-3-11

SPD50N06S2L-13 FAQ

1.How can I place an order for SPD50N06S2L-13 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPD50N06S2L-13 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPD50N06S2L-13 reliable?

The price and inventory of SPD50N06S2L-13 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPD50N06S2L-13 is usually 5 days.

3.What payment methods are accepted for SPD50N06S2L-13?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPD50N06S2L-13 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPD50N06S2L-13?

SPD50N06S2L-13 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPD50N06S2L-13 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPD50N06S2L-13?

For technical support, including SPD50N06S2L-13 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPD50N06S2L-13 requirements.

6.How does Aetrix verify that SPD50N06S2L-13 is sourced from the original manufacturer or authorized distributors?

All SPD50N06S2L-13 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPD50N06S2L-13 meets industry standards.

7.What is the process for return or replacement of SPD50N06S2L-13?

All SPD50N06S2L-13 units undergo pre-shipment inspection (PSI). If there is an issue with SPD50N06S2L-13, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPD50N06S2L-13 part is unused and in its original packaging.

Return procedure for SPD50N06S2L-13:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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