Infineon Technologies SPI07N60S5HKSA1

Overview

SPI07N60S5 from Infineon Technologies is a 600 V, 7.3 A Cool MOS™ power transistor in PG-TO262 package, featuring R_DS(on) = 0.6 Ω at V_GS = 10 V and T_j = 25 °C, ultra-low gate charge (Q_g = 27–35 nC), and periodic avalanche rating. It serves as a high-efficiency primary-side switch in offline SMPS for industrial AC/DC adapters and LED drivers.

For engineers reviewing the SPI07N60S5 datasheet, SPI07N60S5 pinout, SPI07N60S5 application, or SPI07N60S5 equivalent, key selection criteria include its 20 V/ns dv/dt rating, 230 mJ single-pulse avalanche energy, 970 pF input capacitance, and thermal resistance R_thJC = 1.5 K/W - critical for high-reliability flyback and resonant converter designs.

Technical Context

This N-channel enhancement-mode MOSFET employs Infineon's 5th-generation Cool MOS™ superjunction technology, optimized for reduced conduction and switching losses in hard-switched topologies. Its gate plateau voltage of ~8 V enables robust drive margin under varying supply conditions, while low C_iss/C_oss ratio supports high-frequency operation up to 100 kHz.

The device integrates an intrinsic fast-recovery body diode with t_rr = 750–1275 ns and Q_rr = 4.9 µC, enabling reliable operation in discontinuous conduction mode (DCM) flyback converters without external snubbing. Its R_DS(on) exhibits positive temperature coefficient above 100 °C, supporting inherent current sharing in parallel configurations.

Key Specifications

Pinout & Package

PG-TO262 (3-pin, straight lead, isolated tab) package with drain-connected tab for direct heatsink mounting and thermal resistance R_thJC = 1.5 K/W. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP7NK60ZFP and IPP60R099C6, SPI07N60S5 offers optimal balance of low Q_g, proven dv/dt immunity, and TO262 thermal performance - making it preferred for space-constrained, high-reliability industrial SMPS where gate drive simplicity and avalanche ruggedness are prioritized over ultra-low R_DS(on).

Availability

SPI07N60S5 is available at Aetrix Electronics and suitable for industrial AC/DC power supplies, LED driver power stages, and server auxiliary supplies requiring stable component supply and long-term lifecycle support.

Supply support for SPI07N60S5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

SPI07N60S5 belongs to the Cool MOS™ S5 product line, engineered specifically for high-efficiency, high-reliability offline switch-mode power supplies operating at 65–100 kHz with stringent thermal and ruggedness requirements.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current I_D is 4.6 A at T_C = 100 °C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating and ensures safe operation within the SOA limits when mounted on a heatsink with R_thJC ≤ 1.5 K/W and ambient temperature ≤ 50 °C.

Does SPI07N60S5 have a fully rated body diode for synchronous rectification?

No - the integrated body diode is optimized for freewheeling in flyback and forward converters, not synchronous rectification. Its reverse recovery time (750–1275 ns) and Q_rr (4.9 µC) are typical of fast-recovery diodes, but it lacks the low V_SD and soft recovery characteristics required for high-efficiency SR applications.

Can SPI07N60S5 be used in a ZVS resonant converter?

Yes - its low C_oss (370 pF typ.) and C_o(er) (30 pF) enable efficient zero-voltage switching in LLC and series-resonant topologies up to 300 kHz. However, gate drive must provide sufficient peak current (>2 A) to charge Q_g quickly during the dead-time interval.

What is the recommended gate resistor value for standard flyback operation at 65 kHz?

A gate resistor of 10–15 Ω is recommended for standard flyback operation at 65 kHz. This value balances switching speed (to minimize t_r/t_f loss) and EMI suppression, while ensuring gate drive current stays within safe limits (<2 A peak) for common 1-A drivers like the UCC27324.