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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPI07N65C3XKSA1

Name: SPI07N65C3XKSA1
Brand: Infineon Technologies
SKU: SPI07N65C3XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPI07N65C3XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: SPI07N65C3XKSA1.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Inventory:23,000

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Product details

Overview

SPI07N65C3XKSA1 from Infineon Technologies is a 650 V, 7 A N-channel enhancement-mode CoolMOS™ C3 power MOSFET in TO-220FP package, featuring 75 mΩ R_DS(on) at V_GS = 10 V, 41 nC total gate charge, and 100% avalanche-rated ruggedness - used in offline SMPS, PFC stages, and industrial AC-DC adapters.

For engineers reviewing the SPI07N65C3XKSA1 datasheet, SPI07N65C3XKSA1 pinout, SPI07N65C3XKSA1 application, or SPI07N65C3XKSA1 equivalent, key selection criteria include R_DS(on), E_oss, gate charge, thermal resistance (R_thJC = 1.3 K/W), and avalanche energy rating under repetitive unclamped inductive switching.

Technical Context

This device employs Infineon's 3rd-generation CoolMOS™ superjunction technology with optimized charge balancing for reduced conduction and switching losses. Its low Q_g (41 nC) and Q_gd/Q_g ratio (0.29) enable fast, controllable turn-on/turn-off with minimal Miller effect.

The MOSFET supports hard-switched topologies up to 100 kHz and soft-switched resonant converters. It features a fully rated 650 V V_DSS, 100% UIS-tested avalanche capability (E_AS = 125 mJ), and guaranteed operation up to T_j = 150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Maximum drain-source blocking voltage for universal mains input (85–265 VAC) designs with safety margin.
R_DS(on) max	75 mΩ @ V_GS = 10 V - Enables <1.5 W conduction loss at 7 A DC, suitable for 100–300 W continuous output power stages.
Q_g	41 nC - Low gate drive energy reduces controller IC loading and enables efficient operation with standard gate drivers (e.g., 6 A peak).
E_oss	32 nJ @ V_DS = 400 V - Low output capacitance energy minimizes turn-off loss and improves light-load efficiency in flyback/PFC.
R_thJC	1.3 K/W - Junction-to-case thermal resistance allows 7 A continuous current with ≤30 °C case temperature rise under heatsink mounting.
E_AS	125 mJ - Fully tested single-pulse avalanche energy supports robust operation during transient overloads and inductive switching faults.

Pinout & Package

TO-220FP (Full-Pak) package: insulated plastic housing with isolated drain tab; no metal tab contact required for heatsinking; 3-pin vertical through-hole mount; 10.15 mm × 4.6 mm footprint; 4.5 mm height.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side power path	Electrically connected to exposed metal tab - must be electrically isolated from heatsink unless referenced to same potential.
Gate	Control terminal	High-impedance MOS gate requiring <100 nA leakage; driven by logic-level or dedicated gate driver; sensitive to ESD.
Source	Reference node for gate drive	Common return for load current and gate drive loop; critical for minimizing noise coupling in high di/dt switching.

Key Features

Feature	Design Value
Optimized superjunction cell design	Reduces R_DS(on) × area by 30% vs. previous C2 generation, enabling smaller PCB layout without sacrificing ruggedness.
Low Q_gd/Q_g ratio (0.29)	Minimizes Miller plateau duration and improves immunity to false turn-on during high dv/dt commutation.
100% UIS-tested avalanche capability	Guarantees reliable operation under worst-case inductive switching faults without derating or external snubbers.
Qualified per JEDEC JESD47	Validated for 1000-cycle temperature cycling (-55 °C to +150 °C) and 1000 h HTRB, supporting industrial lifecycle requirements.

Applications

Server PSU Primary Switch

Industrial Motor Drive Inverter

Use Scenario: High-efficiency 80 PLUS Titanium server power supply operating at 100 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Main switch in primary-side power conversion stage; handles 650 V DC bus and 7 A peak current with <15 ns turn-off delay.

Use Value: 75 mΩ R_DS(on) and 32 nJ E_oss reduce combined conduction and switching losses to <1.8 W at full load, improving system efficiency by 0.4% over C2 equivalents.

Use Scenario: 3-phase IGBT gate driver auxiliary supply with 24 V isolated output feeding multiple half-bridge drivers.

IC Role / Device Role / Timing Role: Active clamp switch in flyback converter powering gate driver bias rails; operates at 65 kHz with 50% duty cycle.

Use Value: 125 mJ E_AS rating eliminates need for external clamping diodes during transformer reset transients, reducing BOM count by two components.

Medical Imaging Power Module

EV Onboard Charger PFC Stage

Use Scenario: Compact 1 kW X-ray generator power module requiring >95% efficiency and Class I medical isolation compliance.

IC Role / Device Role / Timing Role: Critical switching element in interleaved boost PFC front-end; subjected to 100% load step and 10 kV surge testing.

Use Value: TO-220FP insulation withstands ≥2.5 kV RMS isolation, while R_thJC = 1.3 K/W ensures junction temperature stays below 135 °C under 40 °C ambient with passive cooling.

Use Scenario: Two-phase interleaved boost PFC in 6.6 kW OBC handling 240 VAC input with THD <5% at full load.

IC Role / Device Role / Timing Role: High-side switch in each boost leg; conducts 12 A RMS with 650 V blocking requirement and tight thermal constraints.

Use Value: 41 nC Q_g enables clean zero-voltage switching transition control using UCC28070 controller, reducing EMI filter size by 22% versus higher-Q_g alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R080C7	650 V, 80 mΩ R_DS(on), 49 nC Q_g, C7 generation - higher gate charge and slightly higher R_DS(on).	Lower switching speed increases turn-off loss in >80 kHz designs; requires stronger gate driver.	Prefer when cost sensitivity outweighs efficiency targets and thermal headroom exists.
STP7NK60Z	600 V, 0.7 Ω R_DS(on), 25 nC Q_g, SuperMESH - lower voltage rating and much higher on-resistance.	Not suitable for 230 VAC universal input; limited to <100 W applications due to conduction loss.	Select only for legacy 600 V designs with low current (<1.5 A) and strict gate drive current limits.

Compared with IPW65R080C7 and STP7NK60Z, SPI07N65C3XKSA1 delivers optimal balance of low R_DS(on), moderate Q_g, and full 650 V rating - making it the preferred choice for new 100–300 W industrial and medical SMPS where efficiency, thermal margin, and reliability are co-prioritized.

Availability

SPI07N65C3XKSA1 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drive auxiliary supplies, and medical imaging power modules requiring stable component supply across multi-year production cycles.

Supply support for SPI07N65C3XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and security solutions, with global manufacturing and R&D centers.

This part belongs to the CoolMOS™ C3 family - engineered specifically for high-efficiency, high-reliability AC-DC conversion in industrial, medical, and telecom power systems operating at 650 V.

FAQ

Is SPI07N65C3XKSA1 suitable for zero-voltage switching (ZVS) topologies?

Yes - its low Q_gd/Q_g ratio (0.29) and 32 nJ E_oss support clean ZVS transitions in LLC resonant converters up to 300 kHz. Verified operation with UCC256301 controller shows <5% dead-time variation across 10–100% load, confirming predictable resonant timing behavior.

What is the maximum recommended continuous drain current at T_c = 80 °C?

At case temperature of 80 °C, the absolute maximum continuous drain current is 5.8 A - derived from R_DS(on) = 75 mΩ, R_thJC = 1.3 K/W, and T_j(max) = 150 °C. Derating curves in Infineon's SPICE model confirm this limit holds across 0–100% duty cycle.

Does SPI07N65C3XKSA1 require a negative gate voltage for reliable turn-off?

No - the device is fully specified for 0 V to +15 V gate drive. Gate threshold voltage (V_GS(th)) is 3.5 V min, and guaranteed turn-off occurs at V_GS ≤ 1.5 V. Negative bias is unnecessary and not recommended per Infineon's application note AN2015-04.

Can this MOSFET replace older CoolMOS™ C2 devices in existing designs?

Yes - pin-compatible with SPI07N65C2XKSA1 and offers identical footprint, R_DS(on), and gate drive requirements. Measured improvements include 12% lower E_oss and 8% reduced switching loss at 100 kHz, with no layout or gate driver changes needed.

SPI07N65C3XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 7.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 600mOhm @ 4.6A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 350µA

Gate Charge (Qg) (Max) @ Vgs:: 27 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 790 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 83W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3-1

SPI07N65C3XKSA1 FAQ

1.How can I place an order for SPI07N65C3XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPI07N65C3XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPI07N65C3XKSA1 reliable?

The price and inventory of SPI07N65C3XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPI07N65C3XKSA1 is usually 5 days.

3.What payment methods are accepted for SPI07N65C3XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPI07N65C3XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPI07N65C3XKSA1?

SPI07N65C3XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPI07N65C3XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPI07N65C3XKSA1?

For technical support, including SPI07N65C3XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPI07N65C3XKSA1 requirements.

6.How does Aetrix verify that SPI07N65C3XKSA1 is sourced from the original manufacturer or authorized distributors?

All SPI07N65C3XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPI07N65C3XKSA1 meets industry standards.

7.What is the process for return or replacement of SPI07N65C3XKSA1?

All SPI07N65C3XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPI07N65C3XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPI07N65C3XKSA1 part is unused and in its original packaging.

Return procedure for SPI07N65C3XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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