Infineon Technologies SPI08N50C3XKSA1

Overview

SPI08N50C3 from Infineon Technologies is a 500 V, 7.6 A N-channel CoolMOS™ C3 superjunction power MOSFET in PG-TO262 (TO-262) package, designed for high-efficiency SMPS primary-side switching in offline AC/DC converters, PFC stages, and industrial DC-DC supplies. It features R_DS(on) = 0.6 Ω at T_j = 25°C, ultra-low gate charge (Q_g = 32 nC), and periodic avalanche rating up to 230 mJ.

For engineers reviewing the SPI08N50C3 datasheet, SPI08N50C3 pinout, SPI08N50C3 application, or SPI08N50C3 equivalent, key selection criteria include its 500 V V_(BR)DSS, 7.6 A continuous drain current at 25°C, 50 V/ns dv/dt capability, and thermal resistance R_thJC = 1.5 K/W - critical for high-power density flyback and LLC resonant converter designs.

Technical Context

This device implements Infineon's third-generation CoolMOS™ C3 technology, optimized for reduced conduction and switching losses in hard-switched topologies. Its low effective output capacitance (C_o(er) = 56 pF) and minimized reverse transfer capacitance (C_rss = 12 pF) enable faster switching with lower EMI generation and reduced gate drive loss.

The MOSFET supports robust operation under repetitive avalanche stress (I_AR = 7.6 A, E_AR = 0.5 mJ) and extreme dv/dt conditions (50 V/ns at T_j = 125°C), making it suitable for unclamped inductive load switching and high-noise industrial environments where voltage transients exceed standard MOSFET limits.

Key Specifications

Pinout & Package

PG-TO262 (TO-262) package: 3-pin, straight-lead variant of TO-220 with improved thermal performance over TO-220FP and electrical isolation comparable to TO-220-3-31. Mounting surface is electrically isolated (2500 V_AC, 1 min).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with STP8NK50ZFP and IPP60R099C7, SPI08N50C3 delivers optimal balance of avalanche ruggedness, gate drive efficiency, and thermal performance for 7–8 A, 400 V DC-link applications - especially where board space, reliability, and EMI compliance are prioritized over raw current headroom.

Availability

SPI08N50C3 is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, LED driver flybacks, and HVAC motor inverters requiring stable component supply and long-term lifecycle support.

Supply support for SPI08N50C3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the CoolMOS™ C3 product line, engineered specifically for high-efficiency, high-reliability switching in offline SMPS, PFC, and resonant converter topologies - emphasizing low gate charge, avalanche robustness, and thermally efficient packaging.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The SPI08N50C3 supports 4.6 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects junction-to-case thermal resistance (1.5 K/W) and safe operating area limitations - design must ensure case temperature remains ≤100°C under worst-case ambient and airflow conditions.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No. The SPI08N50C3 has a gate threshold voltage range of 2.1–3.9 V and exhibits excellent dv/dt immunity (50 V/ns at 125°C), eliminating the need for negative gate bias. A standard 0–10 V gate drive with appropriate series resistance (12 Ω typical) ensures clean turn-off without Miller-induced false triggering.

Can SPI08N50C3 replace SPP08N50C3 in existing PCB layouts?

Yes - both share identical PG-TO220 and PG-TO262 packages respectively, and SPI08N50C3 (PG-TO262) is pin-compatible with SPP08N50C3 (PG-TO220) in terms of terminal assignment (Drain–Source–Gate). However, PG-TO262 has longer leads and different mounting hole spacing; mechanical verification is required before drop-in replacement.

What is the body diode reverse recovery charge (Q_rr) and why does it matter?

Q_rr is 3.6 µC at T_j = 25°C, measured at V_R = 400 V and dI_F/dt = 100 A/µs. This parameter directly impacts switching loss and EMI in hard-switched topologies - lower Q_rr reduces turn-on loss in synchronous rectification and minimizes voltage overshoot during commutation in half-bridge circuits.