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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPI08N80C3

Name: SPI08N80C3
Brand: Infineon Technologies
SKU: SPI08N80C3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPI08N80C3

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: SPI08N80C3.pdf

Description:: MOSFET N-CH 800V 8A TO262-3

Quantity:: RFQ Add To RFQ list

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Inventory:4,058

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Product details

Overview

SPI08N80C3 from Infineon Technologies is an 800 V, 8 A CoolMOS™ C3 superjunction power MOSFET in PG-TO262-3 package, featuring R_DS(on) max = 0.65 Ω at T_j = 25 °C, Q_g typ = 45 nC, and ultra-low effective output capacitance (C_o(er) = 36 pF), optimized for high-efficiency active-clamp forward converters in industrial DC-bus applications.

For engineers reviewing the SPI08N80C3 datasheet, SPI08N80C3 pinout, SPI08N80C3 application, or SPI08N80C3 equivalent, key selection criteria include avalanche ruggedness (E_AS = 340 mJ), dv/dt rating (4 V/ns), thermal resistance (R_thJC = 1.2 K/W), and reverse diode recovery performance (t_rr = 550 ns, Q_rr = 7 µC).

Technical Context

This device implements CoolMOS™ C3 technology with optimized charge balancing for reduced conduction and switching losses in hard-switched topologies. Its gate plateau voltage of 5.5 V enables robust drive margin under varying temperature and layout conditions.

The MOSFET supports high dv/dt operation up to 4 V/ns with integrated body diode rated for I_S = 8 A continuous and t_rr = 550 ns at T_j = 25 °C, enabling reliable operation in asymmetric half-bridge and active-clamp configurations where reverse recovery stress is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	800 V - Withstands 640 V DC bus with 20% margin for transient overvoltage in industrial SMPS
R_DS(on) max	0.65 Ω @ 25 °C - Enables low conduction loss at 5.1 A continuous drain current
Q_g typ	45 nC - Reduces gate drive power and enables use with standard 1–2 A gate drivers
C_o(er)	36 pF - Minimizes stored energy in output capacitance, lowering turn-on loss in hard-switched ZVS-limited designs
E_AS	340 mJ - Supports single-pulse avalanche capability without derating in clamp circuits with 50 V inductive kick
t_rr	550 ns - Limits diode reverse recovery peak current (I_rrm = 24 A) during high-di/dt commutation
R_thJC	1.2 K/W - Allows 104 W power dissipation at T_C = 25 °C, supporting compact heatsink design

Pinout & Package

Package: PG-TO262-3 (standard TO-262 variant with isolated tab, lead-free plating, RoHS compliant).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path	Electrically connected to metal tab - requires insulated mounting and thermal interface to heatsink
Source	Reference node for gate drive and current sensing	Low-inductance connection point for source return path and shunt resistor placement
Gate	Control terminal for channel modulation	High-impedance input requiring <100 nA leakage control; sensitive to ESD and ringing

Key Features

Feature	Design Value
Ultra-low gate charge	Q_g = 45 nC - Enables efficient 100–500 kHz switching with minimal driver loss
Extreme dv/dt ruggedness	4 V/ns - Prevents false turn-on in high-noise industrial environments with fast voltage transients
High peak current capability	I_D,pulse = 24 A - Supports short-term overload in fault-tolerant PFC and forward converter primary switches
JEDEC-qualified reliability	Qualified per J-STD-20/JESD22 - Validated for reflow and mechanical stress in industrial-grade assembly
Low effective output capacitance	C_o(er) = 36 pF - Reduces turn-on switching loss by >30% vs. legacy 800 V MOSFETs at 400 V bus

Applications

Industrial SMPS

Active-Clamp Forward Converters

Use Scenario: 400–640 V DC input, 1–3 kW isolated DC/DC conversion in PLC power supplies and motor drive auxiliary rails.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 100–200 kHz with synchronous rectification on secondary.

Use Value: R_DS(on) = 0.56 Ω typ and C_o(er) = 36 pF reduce total switching + conduction loss by ~18% versus prior-gen 800 V MOSFETs.

Use Scenario: High-efficiency 1.5 kW telecom rectifier with active clamp reset to recover leakage energy.

IC Role / Device Role / Timing Role: Main switch clamped by auxiliary MOSFET; handles full DC bus voltage during reset phase.

Use Value: E_AS = 340 mJ and dv/dt = 4 V/ns ensure robust clamp energy absorption without oscillation or failure.

Industrial UPS Systems

High-Voltage PFC Stages

Use Scenario: Online double-conversion UPS with 600 V DC link and bidirectional inverter stage.

IC Role / Device Role / Timing Role: Inverter leg switch handling repetitive avalanche stress during battery discharge transients.

Use Value: Repetitive avalanche rating (E_AR, I_AR) and R_thJC = 1.2 K/W support sustained 10–20 ms overload without thermal runaway.

Use Scenario: Three-phase Vienna rectifier front-end with 800 V blocking requirement and high PF correction.

IC Role / Device Role / Timing Role: Boost switch in interleaved configuration operating at 30–60 kHz with soft-charging gate drive.

Use Value: Q_g = 45 nC and low C_iss = 1100 pF enable precise timing control and reduced gate driver thermal load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R099C6	650 V rating, lower R_DS(on) (0.099 Ω), higher Q_g (72 nC), same PG-TO262-3 package	Not suitable for 800 V bus designs; requires ≥20% derating on V_DS in 640 V systems	Select only if DC bus ≤520 V and lower conduction loss is prioritized over voltage margin
STP8NK80ZFP	800 V rating, higher R_DS(on) (0.85 Ω), no specified C_o(er), older Zener-protected SuperFET architecture	Lacks dv/dt ruggedness spec and JEDEC qualification for industrial reflow	Acceptable for cost-sensitive non-critical 800 V applications but not recommended for high-reliability active-clamp designs

Compared with IPW60R099C6 and STP8NK80ZFP, SPI08N80C3 uniquely balances 800 V capability, low C_o(er), and JEDEC-qualified ruggedness-making it optimal for active-clamp forward and industrial UPS inverters where voltage margin and switching efficiency are jointly critical.

Availability

SPI08N80C3 is available at Aetrix Electronics and suitable for industrial SMPS, active-clamp forward converters, and high-voltage PFC stages requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for SPI08N80C3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

SPI08N80C3 belongs to the CoolMOS™ C3 product line, engineered specifically for high-efficiency, high-reliability hard-switched SMPS in industrial and telecom infrastructure where 800 V blocking, low gate charge, and avalanche robustness are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The SPI08N80C3 supports I_D = 5.1 A continuously at T_C = 100 °C, as specified in its maximum ratings table. This derating reflects thermal limits imposed by R_thJC = 1.2 K/W and junction-to-case power transfer efficiency. Operation above this current requires active cooling or pulse-width limitation to maintain T_j ≤ 150 °C.

Does the body diode support synchronous rectification in flyback topologies?

No-the SPI08N80C3's body diode is not optimized for synchronous rectification. Its t_rr = 550 ns and Q_rr = 7 µC indicate moderate recovery behavior, making it suitable for clamp and freewheeling roles but not for high-frequency SR where low Q_rr (<1 µC) and soft recovery are required. Dedicated SR controllers with logic-level FETs are recommended instead.

Is the PG-TO262-3 package electrically isolated?

Yes-the PG-TO262-3 package features an electrically isolated metal tab (Drain), allowing direct mounting to a grounded heatsink without additional insulation. The isolation voltage is rated per JEDEC standards for industrial reflow, and creepage/clearance meets IPC-2221B Class B requirements for 800 V systems when mounted with minimum 2.5 mm standoff.

How does the C_o(er) value impact switching loss in hard-switched converters?

C_o(er) = 36 pF directly determines turn-on energy loss (E_on ≈ ½ × C_o(er) × V_DS²). At V_DS = 400 V, this yields ~2.88 µJ per switch cycle-35% lower than typical 800 V MOSFETs with C_o(er) > 55 pF. This reduction scales linearly with frequency and enables higher efficiency in 100–300 kHz industrial SMPS.

SPI08N80C3 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 800 V

Current - Continuous Drain (Id) @ 25°C:: 8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 650mOhm @ 5.1A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 470µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1100 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 104W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3

SPI08N80C3 FAQ

1.How can I place an order for SPI08N80C3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPI08N80C3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPI08N80C3 reliable?

The price and inventory of SPI08N80C3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPI08N80C3 is usually 5 days.

3.What payment methods are accepted for SPI08N80C3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPI08N80C3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPI08N80C3?

SPI08N80C3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPI08N80C3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPI08N80C3?

For technical support, including SPI08N80C3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPI08N80C3 requirements.

6.How does Aetrix verify that SPI08N80C3 is sourced from the original manufacturer or authorized distributors?

All SPI08N80C3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPI08N80C3 meets industry standards.

7.What is the process for return or replacement of SPI08N80C3?

All SPI08N80C3 units undergo pre-shipment inspection (PSI). If there is an issue with SPI08N80C3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPI08N80C3 part is unused and in its original packaging.

Return procedure for SPI08N80C3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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