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Infineon Technologies SPI100N03S2L03
- Part No.:
- SPI100N03S2L03
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Datasheet:
-
SPI100N03S2L03.pdf
- Description:
- MOSFET N-CH 30V 100A TO262-3
- Quantity:
- Payment:
- Shipping:
Inventory:5,391
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Product details
Overview
SPI100N03S2L-03 from Infineon Technologies is an N-channel enhancement-mode logic-level power MOSFET in TO262-3-1 package, rated for 30 V VDS, 100 A continuous drain current at TC = 25 °C, and 2.7 mΩ max RDS(on) at VGS = 4.5 V. It operates up to 175 °C, features avalanche rating, dv/dt ruggedness (6 kV/µs), and is optimized for high-efficiency DC-DC converters and motor control in industrial power supplies.
For engineers reviewing the SPI100N03S2L-03 datasheet, SPI100N03S2L-03 pinout, SPI100N03S2L-03 application, or SPI100N03S2L-03 equivalent, key selection criteria include its low gate charge × RDS(on) figure of merit (FOM), superior thermal resistance (RthJC = 0.3–0.5 K/W), and robust unclamped inductive switching capability.
Technical Context
This OptiMOS™ device uses trench-gate silicon technology to achieve high current density with low conduction and switching losses. Its logic-level gate drive (VGS(th) = 1.2–2.0 V) enables direct interfacing with 3.3 V and 5 V microcontrollers without level-shifting circuitry.
The MOSFET integrates a fast, soft-recovery body diode (trr = 86–108 ns, Qrr = 100–125 nC) and supports repetitive avalanche operation (EAR = 30 mJ), making it suitable for hard-switched topologies where diode reverse recovery stress is critical.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum blocking voltage for 12 V and 24 V system-level bus protection and switching |
| RDS(on) max @ VGS = 4.5 V | 3.4 mΩ - Enables <1 W conduction loss at 80 A, critical for high-current synchronous rectification |
| ID continuous @ TC = 25 °C | 100 A - Supports high-power motor drives and server VRMs without parallel devices |
| Qg total | 220 nC - Low gate charge reduces driver power demand and improves efficiency in 100–500 kHz switching |
| RthJC | 0.5 K/W max - Enables >240 W dissipation with modest heatsinking, reducing thermal margin risk |
| EAS | 810 mJ - Withstands single-pulse inductive energy in UPS and power tool H-bridge fault conditions |
| tr/tf | 67/65 ns - Fast switching minimizes overlap loss in half-bridge configurations at ≥200 kHz |
Pinout & Package
Package: TO262-3-1 (ISOTOP® variant of TO-220 compatible outline, surface-mountable with isolated tab). Thermal pad soldered to PCB copper for enhanced heat transfer.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current path output / heat sink interface | Electrically connected to exposed metal tab; must be electrically isolated from chassis unless system ground referenced |
| Source | Reference node for gate drive and current sensing | Low-inductance connection required for stable gate control and accurate shunt-based current monitoring |
| Gate | Control terminal for channel modulation | High-impedance input requiring <10 Ω series resistance to damp ringing and prevent oscillation during fast edge transitions |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate threshold | VGS(th) = 1.2–2.0 V ensures reliable turn-on with 3.3 V MCU GPIOs without gate driver IC overhead |
| Avalanche-rated operation | Single-pulse EAS = 810 mJ allows safe operation under inductive load switching faults without external snubbers |
| dv/dt ruggedness | 6 kV/µs rating prevents false turn-on during high-speed commutation in noisy motor drive environments |
| Soft-recovery body diode | Qrr = 100–125 nC and trr = 86–108 ns reduce voltage overshoot and EMI in freewheeling paths |
| 175 °C maximum junction temperature | Enables compact thermal design in sealed enclosures or high-ambient industrial settings without derating penalties |
Applications
| Industrial Motor Drives | Server VRM / POL Converters |
|---|---|
|
Use Scenario: Half-bridge inverter stage for 3-phase BLDC motors in HVAC compressors and pumps. IC Role / Device Role / Timing Role: High-side and low-side switching element handling 100 A peak phase current at 20–40 kHz PWM frequency. Use Value: Low RDS(on) and fast switching minimize conduction and switching losses, enabling >98.5% efficiency at full load. |
Use Scenario: Synchronous buck high-side switch in 48 V-to-12 V intermediate bus converter for AI accelerators. IC Role / Device Role / Timing Role: Main power switch operating at 300 kHz with 100 A DC output current capability. Use Value: Gate charge × RDS(on) FOM < 600 Ω·nC ensures minimal driver loss and thermal rise under high-frequency operation. |
| Uninterruptible Power Supplies | Power Tool Battery Packs |
|
Use Scenario: Inverter output stage in line-interactive UPS delivering 2 kVA sinusoidal output. IC Role / Device Role / Timing Role: Bidirectional switching device supporting both grid-tie and battery discharge modes with reverse diode conduction. Use Value: Avalanche rating and soft-recovery diode enable reliable operation during AC line transients and short-circuit events. |
Use Scenario: Main battery disconnect and protection switch in 60 V cordless drill packs with active cell balancing. IC Role / Device Role / Timing Role: Load switch controlling 100 A surge current during trigger pull, with integrated overcurrent and thermal shutdown signaling. Use Value: 175 °C Tjmax and low RDS(on) allow sustained high-current bursts without thermal throttling or derating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRF1405PbF | RDS(on) = 5.3 mΩ @ 10 V (vs. 2.2 mΩ), higher Qg = 230 nC, TO-220 package only | Limited to lower-frequency (<100 kHz) applications due to slower switching and higher conduction loss | Prefer when cost sensitivity outweighs efficiency targets and thermal constraints are relaxed |
| STL110N3LLH6 | 30 V, RDS(on) = 2.3 mΩ @ 4.5 V, but rated only to 150 °C Tjmax and lacks avalanche rating | Not suitable for unclamped inductive loads or high-temperature sealed environments | Select only for space-constrained SMD designs where avalanche immunity is not required |
Compared with IRF1405PbF and STL110N3LLH6, SPI100N03S2L-03 delivers superior thermal capability (175 °C), proven avalanche robustness, and lowest gate-charge × RDS(on) FOM-making it the optimal choice for high-reliability, high-efficiency industrial power stages.
Availability
SPI100N03S2L-03 is available at Aetrix Electronics and suitable for industrial motor drives, server VRMs, uninterruptible power supplies, and power tool battery management systems requiring stable component supply across multi-year production cycles.
Supply support for SPI100N03S2L-03 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D infrastructure.
SPI100N03S2L-03 belongs to the OptiMOS™ 30 V product line, engineered specifically for high-current, high-efficiency power conversion in industrial automation, computing, and energy storage systems.
FAQ
What is the maximum recommended gate-source voltage for SPI100N03S2L-03?
The absolute maximum VGS is ±20 V per datasheet specifications. For reliable long-term operation, gate drive should be limited to +10 V to +15 V for full enhancement, with transient spikes held below +18 V using clamping Zener diodes or gate driver rail regulation.
Can SPI100N03S2L-03 be used in paralleled configurations?
Yes-the device exhibits positive temperature coefficient for RDS(on) above 100 °C, enabling inherently stable current sharing. Designers must match gate loop inductance and use Kelvin source connections to avoid oscillation and ensure balanced dynamic current distribution.
Is the body diode suitable for synchronous rectification?
No-the internal body diode is optimized for freewheeling, not synchronous rectification. Its Qrr and forward voltage are higher than discrete Schottky diodes. For synchronous rectifier applications, use external low-VF diodes or dedicated SR controllers with separate MOSFETs.
What PCB layout practices improve thermal performance?
Use ≥6 cm² of 70 µm thick copper on the drain pad, connected via multiple thermal vias to inner-layer ground planes. Avoid routing signal traces under the tab. Maintain ≥1.5 mm clearance between tab and adjacent components to prevent thermal coupling and ensure conformal coating compatibility.
SPI100N03S2L03 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- OptiMOS™
- Package/Case:
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 3mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 220 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 8180 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 300W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO262-3-1
SPI100N03S2L03 FAQ
1.How can I place an order for SPI100N03S2L03 through Aetrix?
Please submit a Request for Quotation (RFQ) for SPI100N03S2L03 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SPI100N03S2L03 reliable?
The price and inventory of SPI100N03S2L03 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPI100N03S2L03 is usually 5 days.
3.What payment methods are accepted for SPI100N03S2L03?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPI100N03S2L03 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SPI100N03S2L03?
SPI100N03S2L03 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SPI100N03S2L03 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SPI100N03S2L03?
For technical support, including SPI100N03S2L03 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPI100N03S2L03 requirements.
6.How does Aetrix verify that SPI100N03S2L03 is sourced from the original manufacturer or authorized distributors?
All SPI100N03S2L03 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPI100N03S2L03 meets industry standards.
7.What is the process for return or replacement of SPI100N03S2L03?
All SPI100N03S2L03 units undergo pre-shipment inspection (PSI). If there is an issue with SPI100N03S2L03, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SPI100N03S2L03 part is unused and in its original packaging.
Return procedure for SPI100N03S2L03:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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