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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPI10N10

Name: SPI10N10
Brand: Infineon Technologies
SKU: SPI10N10
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPI10N10

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: SPI10N10.pdf

Description:: MOSFET N-CH 100V 10.3A TO262-3

Quantity:: RFQ Add To RFQ list

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Inventory:6,908

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Product details

Overview

SPI10N10 from Infineon Technologies is an N-channel enhancement-mode SIPMOS™ power MOSFET in P-TO262-3-1 package, rated for 100 V V_DS, 10.3 A continuous drain current at T_C = 25 °C, and 180 mΩ R_DS(on) at V_GS = 10 V. It supports 175 °C operation, is avalanche-rated (E_AS = 60 mJ), and dv/dt-rated (6 kV/µs), making it suitable for industrial motor control and DC-DC converter primary-side switching.

For engineers reviewing the SPI10N10 datasheet, SPI10N10 pinout, SPI10N10 application, or SPI10N10 equivalent, key selection considerations include its 100 V blocking voltage, 180 mΩ on-resistance, TO-262 thermal performance (R_thJC = 3 K/W), avalanche ruggedness, and gate threshold voltage range (2.1–4 V).

Technical Context

This discrete power MOSFET operates in enhancement mode with a fixed N-channel structure and integrated body diode. Its gate threshold voltage (2.1–4 V) enables direct drive from 3.3 V or 5 V logic controllers, while the 100 V V_DS rating supports 48 V bus systems and flyback/forward converter topologies.

The device features robust unclamped inductive switching capability (E_AS = 60 mJ at I_D = 10.3 A, V_DD = 25 V) and high dv/dt immunity (6 kV/µs), critical for noise-prone industrial environments and hard-switched SMPS designs where parasitic ringing must be contained without snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Supports 48 V input systems with ≥2× safety margin against transients
R_DS(on)	180 mΩ max at V_GS = 10 V - Enables <1.9 W conduction loss at 10.3 A
I_D (continuous)	10.3 A at T_C = 25 °C - Requires heatsinking above ~65 °C case temperature
E_AS	60 mJ - Withstands single-pulse inductive energy without failure in relay/snubberless flyback
T_j max	175 °C - Allows operation in sealed enclosures or high-ambient industrial settings
dv/dt rating	6 kV/µs - Resists false turn-on during fast voltage transients in motor drives
V_GS(th)	2.1–4 V - Compatible with standard microcontroller GPIO without level-shifting

Pinout & Package

P-TO262-3-1 (straight-lead variant of TO-263, no heatsink tab solder pad), surface-mount compatible with through-hole footprint adaptation. Case isolated; drain connected to tab.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; connects to low-side return path or ground plane
Pin 2 (Gate)	Control electrode	High-impedance input requiring <100 nA leakage; sensitive to ESD and ringing
Pin 3 (Drain)	Power output terminal	Connected to internal die backside; electrically tied to metal tab for thermal conduction

Key Features

Feature	Design Value
N-channel enhancement mode	Zero conduction at V_GS = 0 V; requires active gate pull-up for turn-on - simplifies fail-safe control logic
Avalanche-rated (E_AS)	60 mJ single-pulse energy handling - eliminates need for external clamping in inductive load switching
175 °C maximum junction temperature	Enables full-rated current in ambient up to 105 °C with appropriate PCB copper area - reduces derating overhead
dv/dt rated (6 kV/µs)	Immune to spurious turn-on during fast-rising V_DS edges - improves reliability in half-bridge and motor phase-leg layouts

Applications

Industrial Motor Drives

DC-DC Converters

Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers driving fans, pumps, or conveyors.

IC Role / Device Role / Timing Role: High-side or low-side power switch controlling PWM-modulated phase current.

Use Value: 180 mΩ R_DS(on) limits conduction loss to ≤1.9 W at 10.3 A, reducing heatsink size by 30% vs. 250 mΩ alternatives.

Use Scenario: Primary-side switch in 48 V input, 12 V output forward converter for telecom power supplies.

IC Role / Device Role / Timing Role: Main switching transistor handling 10.3 A peak primary current at 200 kHz.

Use Value: 60 mJ E_AS withstands leakage inductance spikes without snubber, cutting BOM cost and layout area.

Uninterruptible Power Supplies

LED Constant-Current Drivers

Use Scenario: Battery-charging FET in line-interactive UPS with 48 V battery bank and bidirectional buck-boost stage.

IC Role / Device Role / Timing Role: Synchronous rectifier or charging control switch operating in continuous conduction mode.

Use Value: 175 °C T_j rating ensures stable operation during extended overload conditions without thermal shutdown.

Use Scenario: High-side switch regulating constant current to 10–20 strings of high-power white LEDs in architectural lighting.

IC Role / Device Role / Timing Role: Linear or PWM-controlled current source switch with fast turn-off for dimming fidelity.

Use Value: 6 kV/µs dv/dt immunity prevents false triggering during rapid LED string voltage transitions in multi-string configurations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK100ZFP	100 V, 10 A, R_DS(on) = 220 mΩ, TO-220FP package, lower E_AS (45 mJ)	Limited to lower-energy inductive loads; less suited for snubberless flyback	Prefer when cost sensitivity outweighs avalanche margin and thermal performance is secondary
IRF540NPBF	100 V, 33 A, R_DS(on) = 44 mΩ, TO-220 package, no specified E_AS or dv/dt rating	Higher current capability but lacks documented ruggedness specs - requires external protection	Choose only when higher peak current and lower R_DS(on) justify added design complexity and validation effort

Compared with STP10NK100ZFP and IRF540NPBF, SPI10N10 uniquely balances 100 V rating, 180 mΩ on-resistance, certified avalanche energy, and dv/dt immunity in a thermally efficient TO-262 package - ideal for compact, rugged industrial power stages where reliability under stress is non-negotiable.

Availability

SPI10N10 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-term manufacturability.

Supply support for SPI10N10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D infrastructure.

SPI10N10 belongs to the SIPMOS™ family of discrete power MOSFETs, engineered for high-reliability industrial switching applications demanding ruggedness, thermal efficiency, and consistent parametric performance across temperature.

FAQ

Is SPI10N10 suitable for use in synchronous rectification?

No - SPI10N10 is optimized as a controlled switch, not a low-V_F body diode rectifier. Its body diode forward voltage (V_SD) is unspecified in the target datasheet, and reverse recovery charge (Q_rr) is marked "tbd", indicating insufficient characterization for synchronous rectifier duty. Use dedicated SR controllers with logic-level MOSFETs instead.

What is the recommended gate resistor value for hard-switching at 200 kHz?

A 10 Ω to 22 Ω gate resistor is recommended for 200 kHz hard-switching with SPI10N10. This range balances switching speed (minimizing overlap loss) and gate ringing suppression, given its typical input capacitance (~1.2 nF) and gate plateau voltage (~4.5 V). Layout-dependent parasitics require empirical tuning on the target PCB.

Does SPI10N10 have a built-in ESD protection diode on the gate?

No - the datasheet does not specify integrated gate ESD protection. The gate-source leakage current (I_GSS) is rated ≤100 nA at V_GS = 20 V, confirming standard MOSFET gate oxide construction. External 10 V Zener clamps or series resistors are required for handling >2 kV HBM ESD events during assembly or field operation.

Can SPI10N10 replace SPB10N10 in a P-TO263-3-2 layout?

No - SPI10N10 uses P-TO262-3-1 (straight-lead), while SPB10N10 uses P-TO263-3-2 (gull-wing SMD). Their footprints are mechanically incompatible: TO-262 has through-hole pins; TO-263 requires reflow-soldered gull wings. Thermal vias and copper pour design also differ significantly between the two packages.

SPI10N10 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 10.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 170mOhm @ 7.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 21µA

Gate Charge (Qg) (Max) @ Vgs:: 19.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 426 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3-1

SPI10N10 FAQ

1.How can I place an order for SPI10N10 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPI10N10 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPI10N10 reliable?

The price and inventory of SPI10N10 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPI10N10 is usually 5 days.

3.What payment methods are accepted for SPI10N10?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPI10N10 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPI10N10?

SPI10N10 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPI10N10 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPI10N10?

For technical support, including SPI10N10 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPI10N10 requirements.

6.How does Aetrix verify that SPI10N10 is sourced from the original manufacturer or authorized distributors?

All SPI10N10 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPI10N10 meets industry standards.

7.What is the process for return or replacement of SPI10N10?

All SPI10N10 units undergo pre-shipment inspection (PSI). If there is an issue with SPI10N10, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPI10N10 part is unused and in its original packaging.

Return procedure for SPI10N10:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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