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Infineon Technologies SPI11N60C3XKSA1

Part No.:
SPI11N60C3XKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
AetrixSPI11N60C3XKSA1.pdf
Description:
SPI11N60C3 - 600V COOLMOS N-CHAN
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,500

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Product details

Overview

SPI11N60C3 from Infineon Technologies is a 600 V, 11 A CoolMOS™ C3 superjunction N-channel power MOSFET in PG-TO262 (D²PAK) package, optimized for high-efficiency SMPS in telecom and industrial AC-DC converters. It delivers RDS(on) = 0.38 Ω at Tj = 25°C, ultra-low gate charge (Qg = 45–60 nC), and periodic avalanche rating up to 340 mJ.

For engineers reviewing the SPI11N60C3 datasheet, SPI11N60C3 pinout, SPI11N60C3 application, or SPI11N60C3 equivalent, key selection criteria include its 50 V/ns dv/dt capability at 125°C, 125 W Ptot at TC = 25°C, and full isolation (2500 VAC, 1 min) in leaded variants - critical for high-reliability offline switchers and PFC stages.

Technical Context

This device implements Infineon's third-generation CoolMOS™ technology with optimized charge balancing for reduced conduction and switching losses. Its gate threshold voltage (VGS(th) = 2.1–3.9 V) enables robust 10 V gate drive compatibility while maintaining low EMI due to controlled dV/dt (50 V/ns) and soft body diode recovery (trr = 400–600 ns).

The MOSFET supports hard-switched topologies including flyback, forward, and active clamp forward converters. Its thermal resistance RthJC = 1 K/W (lead-frame) and RthJA = 62 K/W (standard PCB) enable compact heatsink designs, and repetitive avalanche rating (IAR = 11 A, EAR = 0.6 mJ) supports transient overvoltage resilience without external snubbers.

Key Specifications

ParameterValue and Actual Design Meaning
VDS600 V - Supports 400 V DC-link operation with 50% safety margin in universal-input AC-DC supplies
RDS(on)0.38 Ω @ Tj = 25°C - Enables <1.5 W conduction loss at 7 A continuous drain current
ID11 A @ TC = 25°C - Sustains full-load current in 200–300 W server PSUs and industrial adapters
Qg45–60 nC - Reduces gate driver power demand and enables >100 kHz operation with low-loss Si drivers
tr/tf5 ns / 5–9 ns - Minimizes switching transition time, lowering turn-on/turn-off energy loss
EAS340 mJ - Withstands single-pulse inductive energy surges without failure in unclamped inductive loads
dV/dt50 V/ns @ Tj = 125°C - Ensures noise-immune operation in high-speed, high-voltage switching nodes

Pinout & Package

PG-TO262 (D²PAK) package: 3-pin surface-mount variant with isolated drain tab (2500 VAC, 1 min), thermally enhanced copper lead frame, and RoHS-compliant matte tin plating.

Pin/TerminalCircuit RoleDesign Meaning
1 (Gate)Control inputLow-impedance gate terminal requiring ≤10 V drive; Qgs = 5.5 nC ensures fast turn-on with minimal Miller effect
2 (Drain)High-voltage power outputExposed metal tab connected to drain; provides primary thermal path and high-voltage isolation barrier
3 (Source)Power return referenceLow-inductance source connection; ties gate driver ground and current-sense node in half-bridge configurations

Key Features

FeatureDesign Value
Ultra-low gate chargeQg = 45–60 nC reduces gate driver losses and enables higher-frequency operation without sacrificing efficiency
Periodic avalanche ratedEAR = 0.6 mJ at 11 A allows reliable operation under repetitive inductive transients without derating
Extreme dv/dt rated50 V/ns at 125°C prevents false turn-on in high-noise environments like motor drives and PFC circuits
Improved transconductancegfs = 8.3 S enhances linearity and current control precision in analog-regulated topologies
Body diode soft recoverytrr = 400–600 ns and Qrr = 6 µC minimize reverse recovery spikes and EMI in synchronous rectification

Applications

Server Power SupplyIndustrial AC-DC Adapter

Use Scenario: Primary-side switch in 250 W LLC resonant converter for datacenter PSU.

IC Role / Device Role / Timing Role: High-voltage power switch operating at 200–300 kHz with zero-voltage switching (ZVS) assist.

Use Value: 0.38 Ω RDS(on) and 45 nC Qg reduce total switching + conduction loss to <2.1 W, enabling 94%+ efficiency at full load.

Use Scenario: Main switch in 150 W active-clamp forward converter for factory automation PLC power modules.

IC Role / Device Role / Timing Role: Hard-switched primary transistor handling 400 V DC-link with 100 kHz PWM.

Use Value: 50 V/ns dv/dt rating and 340 mJ EAS eliminate need for RC snubbers, simplifying BOM and improving reliability under line surges.

Telecom RectifierLED Driver Power Stage

Use Scenario: Primary switch in 300 W flyback-based telecom rectifier (−48 V output).

IC Role / Device Role / Timing Role: High-voltage switch with integrated avalanche ruggedness for unregulated input transients.

Use Value: Periodic avalanche rating (EAR = 0.6 mJ) sustains 1000+ cycles of 600 V surge without degradation, meeting GR-1089-CORE compliance.

Use Scenario: High-side switch in constant-current LED driver for street lighting (100–277 V AC input).

IC Role / Device Role / Timing Role: Isolated primary switch driving transformer-coupled secondary regulation.

Use Value: 2500 VAC isolation in PG-TO262 package meets IEC 61347-2-13 creepage/clearance requirements for Class I luminaires.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP12N60DM6RDS(on) = 0.33 Ω, Qg = 36 nC, but lower EAS = 220 mJ and no explicit periodic avalanche ratingBetter conduction loss at light load; less robust under repetitive inductive stressPrefer for fixed-frequency flyback where avalanche events are rare and efficiency dominates
IPP60R041C7RDS(on) = 0.041 Ω, Qg = 72 nC, 650 V rating, but higher gate charge increases driver complexitySuperior conduction loss in high-current PFC; requires stronger gate driver and layout attentionChoose for >500 W PFC stages where RDS(on) reduction outweighs switching loss penalty

Compared with STP12N60DM6 and IPP60R041C7, SPI11N60C3 offers balanced trade-offs: moderate RDS(on) and Qg, certified periodic avalanche behavior, and industry-standard D²PAK footprint - making it optimal for cost-sensitive, reliability-critical 200–400 W industrial and telecom power supplies.

Availability

SPI11N60C3 is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, telecom rectifiers, and LED driver power stages requiring stable component supply across multi-year production cycles.

Supply support for SPI11N60C3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and security ICs, with over 30 years of high-voltage power device innovation.

The CoolMOS™ C3 product line targets high-efficiency, high-reliability offline SMPS - specifically engineered for reduced gate charge, improved dv/dt immunity, and rugged avalanche performance in telecom, industrial, and lighting applications.

FAQ

What is the maximum junction temperature for SPI11N60C3?

The absolute maximum junction temperature is +150°C, with continuous operation rated from −55°C to +150°C. Thermal derating begins above TC = 25°C per the Ptot(TC) curve on page 4 of the datasheet, where power dissipation drops linearly to 33 W at TC = 100°C.

Does SPI11N60C3 require a gate resistor for stability?

Yes - a gate resistor (typically 6.8 Ω, as used in switching time test conditions) is required to dampen ringing, control di/dt, and prevent parasitic oscillation. The device's low Qgd/Qgs ratio improves Miller immunity, but external RG remains essential for EMI control and driver protection in hard-switched topologies.

Is the body diode suitable for synchronous rectification?

No - the body diode is not optimized for synchronous rectification. While it has soft recovery (trr = 400–600 ns, Qrr = 6 µC), its forward voltage (VSD = 1.0–1.2 V) is significantly higher than discrete Schottky or GaN FETs. It is intended for freewheeling only, not active rectification.

Can SPI11N60C3 be used in a half-bridge configuration?

Yes - SPI11N60C3 is commonly deployed in half-bridge topologies such as active clamp forward and LLC resonant converters. Its 50 V/ns dv/dt rating and isolated package ensure robust high-side switching when paired with appropriate level-shifting gate drivers and bootstrap circuitry.

SPI11N60C3XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Bulk
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
11A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
380mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:
3.9V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:
60 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1200 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
125W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO262-3-1

SPI11N60C3XKSA1 FAQ

1.How can I place an order for SPI11N60C3XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPI11N60C3XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPI11N60C3XKSA1 reliable?

The price and inventory of SPI11N60C3XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPI11N60C3XKSA1 is usually 5 days.

3.What payment methods are accepted for SPI11N60C3XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPI11N60C3XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPI11N60C3XKSA1?

SPI11N60C3XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPI11N60C3XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPI11N60C3XKSA1?

For technical support, including SPI11N60C3XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPI11N60C3XKSA1 requirements.

6.How does Aetrix verify that SPI11N60C3XKSA1 is sourced from the original manufacturer or authorized distributors?

All SPI11N60C3XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPI11N60C3XKSA1 meets industry standards.

7.What is the process for return or replacement of SPI11N60C3XKSA1?

All SPI11N60C3XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPI11N60C3XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPI11N60C3XKSA1 part is unused and in its original packaging.

Return procedure for SPI11N60C3XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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