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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPI11N60S5

Name: SPI11N60S5
Brand: Infineon Technologies
SKU: SPI11N60S5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPI11N60S5

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: SPI11N60S5.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Inventory:368

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Product details

Overview

SPI11N60S5 from Infineon Technologies is a 600 V, 11 A CoolMOS™ C3 superjunction power MOSFET in PG-TO262 (FullPAK) package, optimized for high-efficiency SMPS, PFC stages, and industrial AC-DC converters. It delivers R_DS(on) = 0.38 Ω at T_j = 25°C, ultra-low gate charge (Q_g = 45–60 nC), and periodic avalanche rating up to 340 mJ - enabling robust operation in hard-switched flyback and LLC resonant topologies.

For engineers reviewing the SPI11N60S5 datasheet, SPI11N60S5 pinout, SPI11N60S5 application, or SPI11N60S5 equivalent, key selection criteria include its 50 V/ns dv/dt capability, 11 A continuous drain current at T_C = 100°C, 125 W power dissipation (T_C = 25°C), and integrated body diode with t_rr = 400–600 ns - all critical for high-reliability offline power designs.

Technical Context

This device implements Infineon's third-generation CoolMOS™ C3 technology, featuring optimized charge balancing for reduced switching losses without sacrificing conduction efficiency. Its gate threshold voltage (V_GS(th) = 2.1–3.9 V) ensures stable turn-on under wide input voltage ranges, while the low Q_gd/Q_g ratio (22/45–60 nC) improves EMI behavior and reduces Miller-induced shoot-through risk in half-bridge configurations.

The MOSFET supports both high-side and low-side switching with identical avalanche ruggedness (E_AS = 340 mJ, I_D = 5.5 A) and thermal resistance R_thJC = 3.8 K/W (FullPAK). Its reverse diode exhibits V_SD = 1.0–1.2 V at I_S = 11 A and controlled recovery (Q_rr = 6 µC, I_rrm = 41 A), minimizing commutation losses in synchronous rectification and bidirectional power flow applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands full 400 V DC-link plus transient spikes in universal-input AC-DC supplies.
R_DS(on)	0.38 Ω @ T_j = 25°C - Enables <1.5 W conduction loss at 7 A, supporting compact heatsink design.
I_D cont.	11 A @ T_C = 25°C / 7 A @ T_C = 100°C - Sustains full-load current in enclosed industrial enclosures.
Q_g	45–60 nC - Reduces gate driver power demand and enables >100 kHz operation with standard 1–2 A drivers.
E_AS	340 mJ - Absorbs single-pulse inductive energy without failure during startup or overload events.
t_r/t_f	5 ns / 5–9 ns - Supports fast switching with minimal overlap loss in hard-switched topologies.
dv/dt	50 V/ns - Immune to false triggering in noisy high-voltage environments (e.g., motor drives).

Pinout & Package

Package: PG-TO262 (FullPAK), surface-mount variant with isolated drain pad rated for 2500 V_AC (1 min), thermally enhanced for PCB-mounted heatsinking.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return path for load current	Low-inductance connection point; tied directly to PCB ground plane for EMI control.
2 (Gate)	Control terminal for channel modulation	High-impedance input requiring <100 pF layout capacitance to avoid oscillation.
3 (Drain)	Main high-voltage power terminal	Exposed copper pad on bottom side - must be connected to HV rail and heatsink simultaneously.

Key Features

Feature	Design Value
Ultra-low gate charge	Q_g = 45–60 nC enables efficient 100–300 kHz operation with minimal driver loss.
Periodic avalanche rated	Repetitive E_AR = 0.6 mJ allows safe operation under short-circuit or inductive kick conditions.
Extreme dv/dt immunity	50 V/ns rating prevents spurious turn-on in high-noise bridge-leg layouts.
Improved transconductance	g_fs = 8.3 S ensures tight V_GS control over temperature and load variation.
Thermally isolated package	2500 V_AC isolation enables direct mounting on heatsinks without insulating pads.

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: High-density 1U server power supply operating at 100–300 kHz with universal AC input (90–264 VAC).

IC Role / Device Role / Timing Role: Primary-side switching transistor in continuous conduction mode (CCM) boost PFC and LLC resonant converter stages.

Use Value: Low R_DS(on) and Q_g reduce total losses by >15% vs. legacy 650 V MOSFETs, enabling 96%+ efficiency at 50% load.

Use Scenario: 3.3 kW industrial motor drive front-end with active PFC and wide ambient range (−40°C to +70°C).

IC Role / Device Role / Timing Role: High-current switch in interleaved two-phase boost PFC with digital controller feedback loop.

Use Value: Stable 7 A current capability at T_C = 100°C eliminates derating, while 340 mJ E_AS withstands line surges without snubbers.

EV Onboard Charger (OBC)

Telecom Rectifier Module

Use Scenario: Bidirectional OBC with dual active bridge (DAB) topology handling 6.6 kW AC/DC and DC/AC conversion.

IC Role / Device Role / Timing Role: High-side and low-side switch in DAB half-bridge legs, operating with ZVS at 100–200 kHz.

Use Value: Controlled body diode recovery (Q_rr = 6 µC, t_rr = 400–600 ns) minimizes reverse recovery loss and enables reliable ZVS across full load range.

Use Scenario: 48 V telecom rectifier with hot-swap capability and strict hold-up time requirements (≥20 ms).

IC Role / Device Role / Timing Role: Main switch in forward or active-clamp forward converter delivering regulated 54 V output.

Use Value: 50 V/ns dv/dt rating prevents false triggering during hot-swap transients, and 125 W P_tot supports peak power bursts without thermal throttling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPA60R190C7	650 V, R_DS(on) = 0.19 Ω, Q_g = 42 nC, TO-220FP package	Lower R_DS(on) but higher cost and no FullPAK isolation; requires insulating washer on heatsink	Select when lower conduction loss is prioritized over isolation and board-level thermal integration.
IPW60R099C6	600 V, R_DS(on) = 0.099 Ω, Q_g = 65 nC, TO-247 package	Higher peak current (17 A) and lower R_DS(on), but larger footprint and no built-in isolation	Choose for ultra-high-power (>5 kW) designs where gate drive margin and thermal headroom outweigh PCB space constraints.

Compared with IPA60R190C7 and IPW60R099C6, SPI11N60S5 offers unique value in space-constrained, isolated, and thermally demanding applications - its FullPAK construction eliminates insulation hardware, reduces thermal resistance by 40% vs. TO-220FP, and maintains consistent performance across −55°C to +150°C junction range.

Availability

SPI11N60S5 is available at Aetrix Electronics and suitable for server PSUs, industrial PFC modules, EV onboard chargers, and telecom rectifiers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SPI11N60S5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive ICs, and security solutions, with global manufacturing and R&D infrastructure.

This device belongs to the CoolMOS™ C3 product line - engineered specifically for high-efficiency, high-reliability offline power conversion in industrial, computing, and renewable energy systems.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The SPI11N60S5 supports 7 A continuous drain current at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This rating reflects thermal limits of the FullPAK package and accounts for R_DS(on) increase at elevated temperatures - verified via pulsed testing and SOA curve validation.

Does this MOSFET require a gate resistor for stability?

Yes - a gate resistor (typically 6.8 Ω) is recommended to dampen ringing and control switching speed. The datasheet specifies switching times (t_d(on), t_r, t_d(off), t_f) using RG = 6.8 Ω, and dv/dt immunity testing assumes controlled gate drive impedance to prevent oscillation.

Can SPI11N60S5 replace SPI11N60C3 in existing designs?

No - SPI11N60S5 is not a drop-in replacement for SPI11N60C3. While both share the same voltage/current ratings and C3 technology, the "S5" suffix denotes the PG-TO262 FullPAK package with isolated drain, whereas "C3" variants use PG-TO220 or PG-TO220FP. Layout, thermal interface, and creepage/clearance requirements differ significantly.

Is the body diode suitable for synchronous rectification?

The integrated body diode has characterized parameters (V_SD = 1.0–1.2 V, t_rr = 400–600 ns, Q_rr = 6 µC), making it usable in non-critical synchronous rectification roles. However, for high-frequency or high-efficiency designs, an external Schottky or GaN FET is preferred due to lower V_F and faster recovery.

SPI11N60S5 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:: 54 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1460 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3-1

SPI11N60S5 FAQ

1.How can I place an order for SPI11N60S5 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPI11N60S5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPI11N60S5 reliable?

The price and inventory of SPI11N60S5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPI11N60S5 is usually 5 days.

3.What payment methods are accepted for SPI11N60S5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPI11N60S5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPI11N60S5?

SPI11N60S5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPI11N60S5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPI11N60S5?

For technical support, including SPI11N60S5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPI11N60S5 requirements.

6.How does Aetrix verify that SPI11N60S5 is sourced from the original manufacturer or authorized distributors?

All SPI11N60S5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPI11N60S5 meets industry standards.

7.What is the process for return or replacement of SPI11N60S5?

All SPI11N60S5 units undergo pre-shipment inspection (PSI). If there is an issue with SPI11N60S5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPI11N60S5 part is unused and in its original packaging.

Return procedure for SPI11N60S5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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