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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPI11N65C3XKSA1

Name: SPI11N65C3XKSA1
Brand: Infineon Technologies
SKU: SPI11N65C3XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPI11N65C3XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: SPI11N65C3XKSA1.pdf

Description:: MOSFET N-CH 650V 11A TO262-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SPI11N65C3 from Infineon Technologies is a 650 V, 11 A CoolMOS™ C3 superjunction power MOSFET in PG-TO262 (TO-262) package, featuring R_DS(on) = 0.38 Ω at T_j = 25°C, ultra-low gate charge (Q_g = 45–60 nC), and periodic avalanche rating. It serves as a high-efficiency primary-side switch in offline SMPS, PFC stages, and industrial AC-DC converters operating up to 150°C junction temperature.

For engineers reviewing the SPI11N65C3 datasheet, SPI11N65C3 pinout, SPI11N65C3 application, or SPI11N65C3 equivalent, key selection criteria include its 50 V/ns dv/dt immunity, 340 mJ single-pulse avalanche energy, 8.3 S transconductance, and thermal resistance R_thJC = 1 K/W - critical for high-reliability 650 V hard-switched topologies.

Technical Context

This device implements Infineon's third-generation CoolMOS™ C3 technology, optimized for reduced switching losses and enhanced ruggedness in continuous conduction mode (CCM) PFC and resonant LLC primary switches. Its low Q_gd/Q_gs ratio (≈4:1) and 30 pF Crss support fast, controllable turn-off with minimal voltage overshoot under high dv/dt stress.

The MOSFET integrates a robust body diode with t_rr = 400–600 ns and Q_rr = 6 µC, enabling reliable operation in bridge configurations without external anti-parallel diodes. Its R_DS(on) exhibits <1.4× increase from 25°C to 150°C, ensuring stable conduction loss across wide thermal ranges.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands full mains rectified voltage (e.g., 400 V DC bus + 50% margin) in universal-input offline converters.
R_DS(on)	0.38 Ω @ T_j = 25°C - Enables ≤4.6 W conduction loss at 11 A DC, supporting compact heatsink design.
Q_g	45–60 nC - Reduces gate drive power and enables use of low-cost, low-current drivers (e.g., 1 A peak).
E_AS	340 mJ - Supports single-pulse avalanche survival during output short-circuit or transformer saturation events.
dv/dt Rating	50 V/ns - Immune to false triggering in noisy high-frequency switching environments (e.g., >100 kHz PFC).
t_r/t_f	5 ns / 5–9 ns - Enables fast switching transitions, minimizing overlap loss in hard-switched topologies.
g_fs	8.3 S - Provides strong gate control authority for stable current regulation under dynamic load steps.

Pinout & Package

Package: PG-TO262 (TO-262), 3-pin, through-hole, isolated tab (drain-connected). Standard pin assignment: Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 10 V logic-level drive; low input capacitance (C_iss = 1200 pF) minimizes driver loading.
Pin 2 (Drain / Tab)	High-voltage power terminal	Electrically connected to metal tab; requires isolation from heatsink unless floating-drain topology used.
Pin 3 (Source)	Reference node for gate drive	Serves as return path for gate current and sense point for current-mode control feedback.

Key Features

Feature	Design Value
Ultra-low gate charge	Q_g = 45–60 nC reduces gate driver power dissipation by >40% vs. legacy 650 V MOSFETs.
Periodic avalanche rated	EAR = 0.6 mJ per pulse allows safe repetitive clamping in overvoltage transients without derating.
Extreme dv/dt immunity	50 V/ns rating eliminates need for snubbers in high-speed flyback or forward converters.
High peak current capability	I_D,puls = 33 A supports surge handling during cold-start or overload conditions.
Improved transconductance	g_fs = 8.3 S ensures tight V_GS control over wide ID range, improving line/load regulation.

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: High-density 1 kW+ server power supplies operating at 100–300 kHz with active clamp or LLC topology.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling full AC input rectified voltage and delivering regulated 12 V/48 V outputs.

Use Value: Low R_DS(on) and Q_g reduce total switching + conduction loss to <15 W, enabling >96% efficiency at full load.

Use Scenario: Three-phase industrial motor drives requiring >3 kW boost PFC front-end with THD <5%.

IC Role / Device Role / Timing Role: Fast-switching boost switch in continuous conduction mode (CCM), synchronized to line frequency.

Use Value: 50 V/ns dv/dt rating prevents spurious turn-on during high di/dt commutation, eliminating gate oscillation issues.

Telecom Rectifier Module

EV Charger Onboard DC-DC

Use Scenario: -48 V telecom rectifiers converting 3-phase AC to isolated 54 V DC with 95% efficiency target.

IC Role / Device Role / Timing Role: Main switch in phase-shifted full-bridge (PSFB) topology operating at 150–200 kHz.

Use Value: 340 mJ E_AS withstands repeated output short-circuits during hot-swap events without failure.

Use Scenario: Bidirectional OBC DC-DC stage (400 V ↔ 48 V) in 11 kW onboard chargers.

IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge (DAB) converter managing galvanic isolation and power flow reversal.

Use Value: Body diode t_rr = 400–600 ns and Q_rr = 6 µC minimize reverse recovery loss during ZVS transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R041C7	650 V, 0.041 Ω R_DS(on), TO-247 package, higher Q_g (72 nC), lower dv/dt rating (30 V/ns)	Better conduction loss but slower switching; suited for lower-frequency (<100 kHz) designs where thermal margin exceeds electrical loss budget.	Prefer when board space allows TO-247 and efficiency priority favors R_DS(on) over Q_g.
STP12N65M2	650 V, 0.42 Ω R_DS(on), TO-220 package, no avalanche rating, Q_g = 38 nC	Lacks periodic avalanche capability and dv/dt immunity; limited to non-critical consumer-grade SMPS.	Select only for cost-sensitive, low-reliability applications where transient stress is tightly controlled.

Compared with IPW65R041C7 and STP12N65M2, SPI11N65C3 delivers optimal balance of ruggedness (avalanche, dv/dt), switching speed (low Q_g, fast t_r/t_f), and thermal performance (R_thJC = 1 K/W) - making it preferred for industrial and telecom-grade 650 V hard-switched converters.

Availability

SPI11N65C3 is available at Aetrix Electronics and suitable for server PSUs, industrial PFC modules, telecom rectifiers, and EV onboard charger DC-DC stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SPI11N65C3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and security ICs, with global manufacturing and R&D infrastructure.

SPI11N65C3 belongs to the CoolMOS™ C3 product line, engineered specifically for high-efficiency, high-reliability 600–650 V power conversion in industrial, telecom, and server applications demanding low switching loss and robust transient immunity.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The SPI11N65C3 supports 7 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating due to junction-to-case resistance (R_thJC = 1 K/W) and ensures safe operation without exceeding T_j,max = 150°C under typical heatsink conditions.

Does SPI11N65C3 require a negative gate turn-off voltage?

No. The device operates with 0 V to +10 V gate drive (V_GS(th) = 2.1–3.9 V); a negative turn-off voltage is not required. However, applying –5 V during turn-off improves noise immunity in high-dv/dt environments and is supported by the ±20 V V_GS rating.

Can SPI11N65C3 replace older CoolMOS™ C2 devices in existing designs?

Yes - SPI11N65C3 is a direct drop-in replacement for SPP11N65C2 and SPA11N65C2 in identical packages (PG-TO262/TO220FP/TO220), offering improved R_DS(on), lower Q_g, and enhanced dv/dt immunity without layout changes or gate drive redesign.

What is the recommended gate resistor for 150 kHz hard-switched operation?

A 6.8 Ω gate resistor is validated in the datasheet for V_DD = 380 V, I_D = 11 A operation, yielding t_d(on) ≈ 10 ns and t_f ≈ 5–9 ns. For 150 kHz, this value balances switching speed and EMI; values between 4.7 Ω and 10 Ω are typical depending on driver strength and layout parasitics.

SPI11N65C3XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3-1

SPI11N65C3XKSA1 FAQ

1.How can I place an order for SPI11N65C3XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPI11N65C3XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPI11N65C3XKSA1 reliable?

The price and inventory of SPI11N65C3XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPI11N65C3XKSA1 is usually 5 days.

3.What payment methods are accepted for SPI11N65C3XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPI11N65C3XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPI11N65C3XKSA1?

SPI11N65C3XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPI11N65C3XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPI11N65C3XKSA1?

For technical support, including SPI11N65C3XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPI11N65C3XKSA1 requirements.

6.How does Aetrix verify that SPI11N65C3XKSA1 is sourced from the original manufacturer or authorized distributors?

All SPI11N65C3XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPI11N65C3XKSA1 meets industry standards.

7.What is the process for return or replacement of SPI11N65C3XKSA1?

All SPI11N65C3XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPI11N65C3XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPI11N65C3XKSA1 part is unused and in its original packaging.

Return procedure for SPI11N65C3XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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