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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPI12N50C3IN

Name: SPI12N50C3IN
Brand: Infineon Technologies
SKU: SPI12N50C3IN
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPI12N50C3IN

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: SPI12N50C3IN.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SPI12N50C3 from Infineon Technologies is a 500 V, 11.6 A N-channel CoolMOS™ C3 power MOSFET in PG-TO262 (D²PAK) package, optimized for high-efficiency SMPS, PFC stages, and industrial AC-DC converters. It features R_DS(on) = 0.38 Ω at T_j = 25°C, ultra-low gate charge (Q_g = 49 nC), and periodic avalanche rating up to 340 mJ.

For engineers reviewing the SPI12N50C3 datasheet, SPI12N50C3 pinout, SPI12N50C3 application, or SPI12N50C3 equivalent, key selection criteria include its 50 V reverse recovery voltage rating, 50 V/ns dv/dt capability at 125°C, 1 K/W junction-to-case thermal resistance, and compatibility with hard-switched and resonant topologies requiring robust unclamped inductive switching performance.

Technical Context

This device implements Infineon's third-generation CoolMOS™ superjunction technology, delivering reduced specific on-resistance and improved figure-of-merit (R_DS(on) × Q_g) versus prior generations. Its gate threshold voltage (V_GS(th) = 2.1–3.9 V) enables reliable turn-on with standard 10 V gate drivers while maintaining low leakage (I_DSS ≤ 1 µA at 150°C).

The MOSFET integrates a fast, soft-recovery body diode (t_rr = 380 ns, Q_rr = 5.5 µC) and exhibits low effective output capacitance (C_o(er) = 45 pF), supporting high-frequency operation in LLC and ZVS converters without excessive switching loss penalties.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - Supports 400 V DC-link designs with 25% margin for transient overvoltage in industrial and telecom power supplies.
R_DS(on)	0.38 Ω @ T_j = 25°C - Enables <1.5 W conduction loss at 7 A continuous drain current in TO262-mounted applications.
Q_g	49 nC - Reduces gate drive power requirement and allows use of lower-current gate drivers in high-frequency (>100 kHz) converters.
E_AS	340 mJ - Withstands single-pulse inductive energy during startup/fault conditions without failure in properly snubbed circuits.
t_r/t_f	8/8 ns - Fast switching transitions minimize overlap loss and support efficient operation in hard-switched topologies.
C_iss/C_oss	1200/400 pF - Low input/output capacitance improves controllability and reduces Miller-induced shoot-through risk.
V_SD	1.0–1.2 V @ I_F = 11.6 A - Body diode forward drop supports synchronous rectification emulation and light-load efficiency in flyback/PFC.

Pinout & Package

PG-TO262 (D²PAK) package: isolated drain tab (pin 2), source (pin 1), gate (pin 3); 2500 V_AC, 1-minute isolation rating between drain and source leads.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Reference node for gate drive and current return path	Connected directly to PCB ground plane; must be low-inductance for stable switching and EMI control.
2 (Drain)	Main high-voltage power terminal	Exposed copper tab - electrically tied to drain; requires insulated mounting hardware for 2500 V_AC isolation compliance.
3 (Gate)	Control input for channel modulation	High-impedance node sensitive to noise; requires local RC snubber and short trace routing to prevent oscillation.

Key Features

Feature	Design Value
Ultra-low gate charge (Q_g = 49 nC)	Reduces gate driver power dissipation by >30% vs. legacy 500 V MOSFETs, enabling smaller driver ICs and lower BOM cost.
Periodic avalanche rated (E_AR = 0.6 mJ)	Supports repetitive inductive switching stress in motor drives and UPS inverters without derating or external clamping.
Extreme dv/dt immunity (50 V/ns @ 125°C)	Prevents false turn-on in high-noise half-bridge configurations, eliminating need for negative gate bias in many designs.
Low effective output capacitance (C_o(er) = 45 pF)	Minimizes stored energy loss during turn-off, improving efficiency in resonant LLC and phase-shifted full-bridge topologies.

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: High-density 1U server power supply operating at 100–500 kHz with 380–400 V DC-link.

IC Role / Device Role / Timing Role: Main switch in active clamp forward or LLC resonant converter primary side.

Use Value: 0.38 Ω R_DS(on) and 49 nC Q_g enable >95% full-load efficiency while maintaining thermal margin on compact heatsinks.

Use Scenario: Three-phase industrial PFC front-end handling 3 kW–5 kW with THD <5% at full load.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) interleaved PFC stage.

Use Value: Avalanche rating and 50 V/ns dv/dt tolerance ensure reliability under line surges and unbalanced grid conditions.

Telecom Rectifier Module

EV Charger Onboard DC-DC

Use Scenario: -48 V telecom rectifier with 380 V DC-link and forced-air cooling.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge topology.

Use Value: 340 mJ single-pulse avalanche energy withstands lightning-induced transients on AC input without protection circuitry.

Use Scenario: Bidirectional DC-DC converter in 800 V EV onboard charger (OBC), operating at 200–300 kHz.

IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge (DAB) configuration.

Use Value: Soft-recovery body diode (Q_rr = 5.5 µC, t_rr = 380 ns) minimizes reverse recovery loss during zero-voltage switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NM50FD	R_DS(on) = 0.42 Ω, Q_g = 52 nC, no avalanche rating	Lacks periodic avalanche capability; requires external clamping in inductive loads	Preferred where cost sensitivity outweighs ruggedness requirements and layout allows snubber design
IPP60R041C7	R_DS(on) = 0.041 Ω, 650 V rating, higher Q_g (72 nC), TO-220FP package	Lower R_DS(on) but higher gate drive demand; not pin-compatible due to different footprint	Selected when higher voltage margin and lower conduction loss justify larger gate driver and thermal redesign

Compared with STP12NM50FD and IPP60R041C7, SPI12N50C3 delivers superior balance of avalanche ruggedness, gate drive efficiency, and thermal performance in PG-TO262 - making it optimal for space-constrained, high-reliability industrial and telecom power systems where long-term field stability is critical.

Availability

SPI12N50C3 is available at Aetrix Electronics and suitable for server PSUs, industrial PFC modules, telecom rectifiers, and EV onboard DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for SPI12N50C3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

SPI12N50C3 belongs to the CoolMOS™ C3 product line, engineered specifically for high-efficiency, high-reliability switched-mode power supplies operating above 100 kHz with demanding thermal and ruggedness requirements.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The SPI12N50C3 supports 7 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating due to increased R_DS(on) and reduced safe operating area at elevated temperatures, and assumes proper heatsinking per the 1 K/W R_thJC specification.

Does SPI12N50C3 have an isolated package?

Yes - the PG-TO262 package provides full electrical isolation between the drain tab and source/gate leads, rated at 2500 V_AC for one minute. This eliminates the need for insulating pads in heatsink mounting and simplifies creepage/clearance compliance in safety-critical AC-DC designs.

Can SPI12N50C3 replace SPP12N50C3 in existing designs?

Yes - SPI12N50C3 and SPP12N50C3 share identical electrical specifications, thermal characteristics, and pinout, differing only in package (PG-TO262 vs. PG-TO220). Layout adaptation is required for the D²PAK footprint, but no circuit requalification is needed for gate drive, snubbing, or thermal design.

What is the typical reverse recovery charge of the integrated body diode?

The typical reverse recovery charge (Q_rr) is 5.5 µC under conditions of V_R = 400 V, I_F = 11.6 A, and di_F/dt = 100 A/µs. This low Q_rr contributes to reduced switching loss and EMI in hard-switched topologies where the body diode conducts during dead time.

SPI12N50C3IN Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 500 V

Current - Continuous Drain (Id) @ 25°C:: 11.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:: 49 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3-1

SPI12N50C3IN FAQ

1.How can I place an order for SPI12N50C3IN through Aetrix?

Please submit a Request for Quotation (RFQ) for SPI12N50C3IN on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPI12N50C3IN reliable?

The price and inventory of SPI12N50C3IN are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPI12N50C3IN is usually 5 days.

3.What payment methods are accepted for SPI12N50C3IN?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPI12N50C3IN transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPI12N50C3IN?

SPI12N50C3IN orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPI12N50C3IN order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPI12N50C3IN?

For technical support, including SPI12N50C3IN datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPI12N50C3IN requirements.

6.How does Aetrix verify that SPI12N50C3IN is sourced from the original manufacturer or authorized distributors?

All SPI12N50C3IN products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPI12N50C3IN meets industry standards.

7.What is the process for return or replacement of SPI12N50C3IN?

All SPI12N50C3IN units undergo pre-shipment inspection (PSI). If there is an issue with SPI12N50C3IN, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPI12N50C3IN part is unused and in its original packaging.

Return procedure for SPI12N50C3IN:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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