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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPI12N50C3XKSA1

Name: SPI12N50C3XKSA1
Brand: Infineon Technologies
SKU: SPI12N50C3XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPI12N50C3XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: SPI12N50C3XKSA1.pdf

Description:: MOSFET N-CH 560V 11.6A TO262-3

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Product details

Overview

SPI12N50C3 from Infineon Technologies is a 500 V, 11.6 A N-channel CoolMOS™ C3 superjunction power MOSFET in PG-TO262 (TO-262) package, optimized for high-efficiency SMPS, PFC stages, and industrial AC-DC converters. It features R_DS(on) = 0.38 Ω at T_j = 25°C, ultra-low gate charge (Q_g = 49 nC), and periodic avalanche rating up to 340 mJ - enabling robust hard-switching operation in 400 V bus applications.

For engineers reviewing the SPI12N50C3 datasheet, SPI12N50C3 pinout, SPI12N50C3 application, or SPI12N50C3 equivalent, key selection criteria include its 50 V reverse recovery voltage margin, 50 V/ns dv/dt capability at T_j = 125°C, and thermal resistance R_thJC = 3.8 K/W in FullPAK-compatible TO-262 mounting - critical for thermally constrained 100–300 W offline power designs.

Technical Context

This device implements Infineon's third-generation CoolMOS™ C3 technology, featuring optimized cell pitch and charge compensation for reduced R_DS(on) × Q_g figure-of-merit. Its gate threshold voltage (V_GS(th) = 2.1–3.9 V) supports standard 10 V gate drive while maintaining low EMI during switching transitions.

The MOSFET integrates a fast-recovery body diode with t_rr = 380 ns and Q_rr = 5.5 µC at T_j = 25°C, enabling quasi-resonant and LLC topologies without external diode supplementation. Its 2500 V_AC/1 min isolation rating applies only to PG-TO220 variants; the SPI12N50C3 (PG-TO262) retains standard creepage/clearance per IEC 60747-17.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	500 V - supports 400 V DC-link operation with 25% safety margin against transients
R_DS(on)	0.38 Ω @ T_j = 25°C - enables <1.5 W conduction loss at 7 A continuous drain current
I_D cont	11.6 A @ T_C = 25°C - rated for 100–150 W continuous output in forced-air-cooled SMPS
Q_g	49 nC - reduces gate driver power requirement and switching losses in 65–100 kHz PFC stages
E_AS	340 mJ - sustains single-pulse avalanche stress without failure in overvoltage events
t_r/t_f	8 ns / 8 ns - supports clean edge control and minimal switching node ringing in high-frequency designs
R_thJC	3.8 K/W - allows junction temperature rise of ≤38°C under 10 W dissipation with minimal heatsink

Pinout & Package

Package: PG-TO262 (TO-262), 3-pin, straight lead, non-isolated case (drain-connected tab). Mounting requires electrically insulated heatsink interface.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Source terminal (low-side reference)	Connected to PCB ground plane; carries full load current return path
2 (Gate)	Control input	High-impedance MOS gate requiring <100 nF local decoupling and series R_G = 6.8 Ω for optimal dV/dt control
3 (Drain)	Power output / high-voltage node	Internally bonded to metal tab; must be isolated from heatsink via insulating pad or shoulder washer

Key Features

Feature	Design Value
Ultra-low Q_g/R_DS(on) ratio	129 nC/Ω - improves efficiency in 65–135 kHz hard-switched PFC and resonant LLC converters
Periodic avalanche rated	340 mJ single-pulse, 0.6 mJ repetitive - eliminates need for external clamping in flyback snubber circuits
Extreme dv/dt immunity	50 V/ns @ T_j = 125°C - prevents false turn-on in high-noise motor drive half-bridges
Low effective output capacitance	C_o(er) = 45 pF - reduces turn-off energy loss and improves zero-voltage switching (ZVS) initiation
Enhanced transconductance	g_fs = 8 S - delivers stable gain across 25–150°C for precise current-mode control loop stability

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: 80 PLUS Titanium 1U server power supply operating at 100 kHz with 400 V DC-link and 1.5 kW output.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter; handles peak currents up to 11.6 A.

Use Value: Enables >96% efficiency at 50% load due to low R_DS(on) and Q_g, reducing thermal derating and heatsink volume by 30% vs. previous-gen MOSFETs.

Use Scenario: Three-phase industrial rectifier with active front-end (AFE) PFC stage delivering 5 kW at 480 VAC input.

IC Role / Device Role / Timing Role: Low-loss switching element in interleaved dual-boost topology; switched at 65 kHz with 50% duty cycle.

Use Value: Achieves <0.99 THD and meets IEC 61000-3-2 Class A via fast, low-loss switching and controlled dv/dt behavior.

UPS Inverter Half-Bridge

EV Onboard Charger (OBC) DC-DC Stage

Use Scenario: Online double-conversion UPS with 3 kVA output and 400 V battery bank, requiring bidirectional energy flow.

IC Role / Device Role / Timing Role: Low-side switch in synchronous rectified inverter leg; conducts reverse diode current during freewheeling.

Use Value: Body diode t_rr = 380 ns and Q_rr = 5.5 µC minimize commutation loss and voltage overshoot during zero-crossing transitions.

Use Scenario: 6.6 kW OBC with isolated DC-DC stage converting 400 V battery to 14 V auxiliary rail.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge (PSFB) topology operating at 100 kHz.

Use Value: Withstands 50 V/ns dv/dt during ZVS transitions and maintains SOA integrity under 10 ms overload conditions per ISO 6469-3.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK50ZFP	R_DS(on) = 0.42 Ω, Q_g = 52 nC, no avalanche rating	Lacks periodic avalanche capability; requires external clamping in flyback designs	Prefer SPI12N50C3 where unclamped inductive switching or high-reliability PFC is required
IPP60R190C7	R_DS(on) = 0.19 Ω, Q_g = 42 nC, 650 V rating	Higher voltage grade increases cost and gate drive complexity without benefit in 400 V systems	Choose SPI12N50C3 for optimal cost/performance balance in 500 V-class designs

Compared with STP12NK50ZFP and IPP60R190C7, the SPI12N50C3 delivers superior avalanche ruggedness and lower gate charge per ohm - making it the preferred choice for thermally constrained, high-reliability 400 V DC-link applications where system-level fault tolerance and efficiency are co-prioritized.

Availability

SPI12N50C3 is available at Aetrix Electronics and suitable for server PSUs, industrial PFC modules, UPS inverters, and EV onboard charger DC-DC stages requiring stable component supply and long-term production continuity.

Supply support for SPI12N50C3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and power conversion markets.

The CoolMOS™ C3 product line targets high-efficiency, high-reliability AC-DC and DC-DC power conversion - emphasizing low conduction and switching losses, robust avalanche performance, and thermal resilience in compact packages.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The SPI12N50C3 supports 7 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This value reflects thermal derating due to junction-to-case thermal resistance (R_thJC = 3.8 K/W) and ensures safe operation within the 150°C maximum junction temperature limit under sustained load.

Does this MOSFET require a gate resistor for reliable operation?

Yes - a gate series resistor (typically 6.8 Ω) is recommended to dampen gate oscillation and control dv/dt during switching. The datasheet specifies timing parameters (t_d(on), t_r) using R_G = 6.8 Ω, and omitting it risks shoot-through in half-bridge configurations or excessive EMI in high-frequency PFC stages.

Can the SPI12N50C3 replace the older SPI12N50C2 in existing designs?

Yes - the SPI12N50C3 is a direct drop-in replacement for SPI12N50C2 with identical pinout, package, and voltage/current ratings. It offers improved R_DS(on) (0.38 Ω vs. 0.42 Ω), lower Q_g, and enhanced dv/dt immunity, enabling immediate efficiency gains without layout changes.

Is the drain tab electrically isolated in the PG-TO262 package?

No - unlike the PG-TO220-3-111 variant, the SPI12N50C3 in PG-TO262 has a non-isolated drain tab. The metal tab is internally connected to the drain terminal and must be mounted on an electrically insulated heatsink using a thermally conductive but dielectric interface material.

SPI12N50C3XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 560 V

Current - Continuous Drain (Id) @ 25°C:: 11.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:: 49 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3-1

SPI12N50C3XKSA1 FAQ

1.How can I place an order for SPI12N50C3XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPI12N50C3XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPI12N50C3XKSA1 reliable?

The price and inventory of SPI12N50C3XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPI12N50C3XKSA1 is usually 5 days.

3.What payment methods are accepted for SPI12N50C3XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPI12N50C3XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPI12N50C3XKSA1?

SPI12N50C3XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPI12N50C3XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPI12N50C3XKSA1?

For technical support, including SPI12N50C3XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPI12N50C3XKSA1 requirements.

6.How does Aetrix verify that SPI12N50C3XKSA1 is sourced from the original manufacturer or authorized distributors?

All SPI12N50C3XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPI12N50C3XKSA1 meets industry standards.

7.What is the process for return or replacement of SPI12N50C3XKSA1?

All SPI12N50C3XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPI12N50C3XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPI12N50C3XKSA1 part is unused and in its original packaging.

Return procedure for SPI12N50C3XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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