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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPI15N60C3

Name: SPI15N60C3
Brand: Infineon Technologies
SKU: SPI15N60C3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPI15N60C3

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: SPI15N60C3.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Inventory:894

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Product details

Overview

SPI15N60C3 from Infineon Technologies is a 600 V, 15 A CoolMOS™ C3 superjunction N-channel power MOSFET in PG-TO262 (TO-262) package, designed for high-efficiency hard-switched and resonant SMPS topologies. It delivers R_DS(on) = 0.28 Ω at T_j = 25°C, ultra-low gate charge (Q_g = 63 nC), and periodic avalanche rating up to 460 mJ - enabling use in PFC stages of industrial AC/DC power supplies.

For engineers reviewing the SPI15N60C3 datasheet, SPI15N60C3 pinout, SPI15N60C3 application, or SPI15N60C3 equivalent, key selection criteria include its 50 V/ns dv/dt capability at 125°C, 0.8 K/W junction-to-case thermal resistance, and integrated body diode with t_rr = 460 ns - critical for ZVS/ZCS design validation and thermal margin analysis in 1–3 kW server PSUs.

Technical Context

This device belongs to Infineon's third-generation CoolMOS™ C3 platform, optimized for reduced conduction and switching losses via improved transconductance (g_fs = 11.9 S) and ultra-low effective output capacitance (C_o(er) = 80 pF, C_o(tr) = 127 pF). Its gate plateau voltage is 5 V, supporting standard 10 V gate drive while maintaining robust noise immunity.

The MOSFET features fully isolated packaging (2500 V_AC, 1 min) in PG-TO262, with rated continuous drain current of 15 A at T_C = 25°C and 9.4 A at T_C = 100°C. Its repetitive avalanche rating (I_AR = 15 A, E_AR = 0.8 mJ) enables reliable operation under transient overvoltage conditions without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	600 V - supports 400 V DC-link designs with ≥50% safety margin against surge transients
R_DS(on)	0.28 Ω @ T_j = 25°C - enables <1.5 W conduction loss at 9.4 A, reducing heatsink requirements
Q_g	63 nC - lowers gate driver power demand and improves efficiency in 65–100 kHz PFC stages
t_r/t_f	5 ns / 5–10 ns - supports fast switching with minimal overlap loss in hard-switched converters
t_rr	460 ns - limits reverse recovery energy in bridge-leg configurations, reducing EMI generation
R_thJC	0.8 K/W - allows direct mounting to heatsink with predictable thermal path for 156 W P_tot derating
dv/dt	50 V/ns @ T_j = 125°C - ensures stable operation in high-dV/dt environments like motor drives and inverters

Pinout & Package

Package: PG-TO262 (TO-262), 3-pin single-ended through-hole variant with isolated tab (2500 V_AC, 1 min). Tab is electrically connected to drain.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Power return node for channel current	Low-inductance source connection; ties directly to PCB ground plane for EMI control
2 (Gate)	Control electrode for channel modulation	High-impedance input requiring <100 nA leakage; sensitive to layout-induced ringing
3 (Drain)	Main power terminal tied to heatsink	Electrically isolated tab enables direct heatsink mounting without insulator, reducing thermal resistance

Key Features

Feature	Design Value
Ultra-low gate charge	Q_g = 63 nC reduces gate driver losses and enables higher-frequency operation in PFC
Periodic avalanche rated	E_AR = 0.8 mJ supports repeated clamping events without degradation in UPS or solar inverters
Extreme dv/dt rated	50 V/ns at 125°C prevents false turn-on during fast voltage transitions in half-bridge legs
Improved transconductance	g_fs = 11.9 S enhances linearity and dynamic response in closed-loop current regulation
Fully isolated package	2500 V_AC isolation enables safe high-side switching in 3-phase rectifier front-ends

Applications

Industrial AC/DC Power Supplies

Server & Telecom Rectifiers

Use Scenario: Active PFC stage in 2 kW telecom rectifier operating at 65 kHz with 400 V DC-link.

IC Role / Device Role / Timing Role: High-side switch in boost converter; handles full line current with low conduction loss.

Use Value: R_DS(on) = 0.28 Ω and Q_g = 63 nC reduce total losses by ~12% vs. previous-gen MOSFETs, improving system efficiency to >96%.

Use Scenario: Primary-side switch in LLC resonant converter for 1U server PSU with 500 W/in³ density target.

IC Role / Device Role / Timing Role: Hard-switched leg in asymmetric half-bridge; operates with ZVS at light load.

Use Value: C_o(er) = 80 pF and t_r/t_f ≤ 10 ns minimize dead-time losses and improve light-load efficiency.

Solar Microinverters

UPS Inverter Stages

Use Scenario: DC-AC H-bridge switch in 300 W microinverter with transformerless topology.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current with body diode commutation.

Use Value: t_rr = 460 ns and Q_rr = 27 µC limit reverse recovery spikes, reducing EMI filter size by 30%.

Use Scenario: Output inverter stage in online double-conversion UPS with 10 ms hold-up time requirement.

IC Role / Device Role / Timing Role: Periodic avalanche-rated switch absorbing line transients during battery switchover.

Use Value: E_AS = 460 mJ and I_AR = 15 A eliminate need for external clamping circuits, simplifying BOM.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP15N60DM6	R_DS(on) = 0.32 Ω, Q_g = 52 nC, no specified avalanche rating	Lacks periodic avalanche rating; requires external snubber in high-transient environments	Preferable where gate drive power is constrained but transient immunity is less critical
IPP60R190C7	R_DS(on) = 0.19 Ω, Q_g = 72 nC, 650 V rating, TO-220FP package	Lower R_DS(on) improves conduction loss but increases switching loss and thermal footprint	Better for thermally limited designs with ample gate drive capability

Compared with STP15N60DM6 and IPP60R190C7, SPI15N60C3 offers balanced trade-offs: superior avalanche ruggedness versus ST's part and lower gate charge versus Infineon's own C7 series - making it optimal for cost-sensitive, transient-prone PFC stages where reliability trumps marginal efficiency gains.

Availability

SPI15N60C3 is available at Aetrix Electronics and suitable for industrial AC/DC power supplies, server rectifiers, and solar microinverters requiring stable component supply across multi-year production cycles.

Supply support for SPI15N60C3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.

The CoolMOS™ C3 product line targets high-efficiency, high-reliability switch-mode power conversion in industrial, telecom, and renewable energy systems - emphasizing ruggedness, thermal performance, and ease of drive.

FAQ

What is the maximum continuous drain current for SPI15N60C3 at 100°C case temperature?

The maximum continuous drain current is 9.4 A at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating due to junction-to-case thermal resistance (R_thJC = 0.8 K/W) and ensures T_j remains ≤ 150°C under steady-state conduction.

Does SPI15N60C3 have an integrated body diode, and what are its key parameters?

Yes, it includes a monolithic body diode rated for 15 A continuous forward current (I_S) and 45 A pulsed (I_SM). Key parameters include V_SD = 1.0–1.2 V at I_S, t_rr = 460 ns, Q_rr = 27 µC, and peak reverse recovery current I_rrm = 55 A - all measured at T_j = 25°C with dI_F/dt = 100 A/µs.

Can SPI15N60C3 be used in synchronous rectification applications?

No - SPI15N60C3 is not optimized for synchronous rectification. Its body diode exhibits relatively high V_SD (1.0–1.2 V) and t_rr (460 ns), resulting in significant reverse recovery loss. Dedicated SR controllers paired with low-V_F, fast-recovery MOSFETs are recommended instead.

What is the gate threshold voltage range, and how does it affect drive circuit design?

V_GS(th) ranges from 2.1 V to 3.9 V at T_j = 25°C. This wide threshold supports robust noise immunity but requires gate drive voltages ≥10 V to ensure full enhancement and minimize R_DS(on) dispersion. Drive circuits must deliver ≥±20 V gate-source swing to handle worst-case transients without unintended turn-on.

SPI15N60C3 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

SPI15N60C3 FAQ

1.How can I place an order for SPI15N60C3 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPI15N60C3 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPI15N60C3 reliable?

The price and inventory of SPI15N60C3 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPI15N60C3 is usually 5 days.

3.What payment methods are accepted for SPI15N60C3?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPI15N60C3 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPI15N60C3?

SPI15N60C3 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPI15N60C3 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPI15N60C3?

For technical support, including SPI15N60C3 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPI15N60C3 requirements.

6.How does Aetrix verify that SPI15N60C3 is sourced from the original manufacturer or authorized distributors?

All SPI15N60C3 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPI15N60C3 meets industry standards.

7.What is the process for return or replacement of SPI15N60C3?

All SPI15N60C3 units undergo pre-shipment inspection (PSI). If there is an issue with SPI15N60C3, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPI15N60C3 part is unused and in its original packaging.

Return procedure for SPI15N60C3:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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