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Infineon Technologies SPI15N60C3HKSA1

Part No.:
SPI15N60C3HKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
AetrixSPI15N60C3HKSA1.pdf
Description:
MOSFET N-CH 650V 15A TO262-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:7,789

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Product details

Overview

SPI15N60C3HKSA1 from Infineon Technologies is a 650 V, 15 A, N-channel enhancement-mode power MOSFET in TO-262-3 package, featuring 0.3 Ω RDS(on) at VGS = 10 V and 25 °C, 45 nC total gate charge, and optimized for hard-switched SMPS in industrial AC-DC adapters and UPS systems.

For engineers reviewing the SPI15N60C3HKSA1 datasheet, SPI15N60C3HKSA1 pinout, SPI15N60C3HKSA1 application, or SPI15N60C3HKSA1 equivalent, key selection criteria include breakdown voltage margin, conduction loss at 15 A DC, gate drive compatibility with 10 V logic, and thermal performance in TO-262 surface-mount layouts.

Technical Context

This MOSFET employs Infineon's CoolMOS™ C3 technology, delivering reduced specific on-resistance (RDS(on) × A) and improved Eoss (290 nJ) versus prior generations. Its superjunction structure enables high-voltage blocking with low conduction losses.

The device supports unclamped inductive switching (UIS) up to 100 mJ at Tj = 25 °C and features avalanche-rated ruggedness. Gate threshold voltage is specified at 3.0–5.0 V, ensuring reliable turn-on with standard 5 V or 10 V drivers.

Key Specifications

ParameterValue and Actual Design Meaning
VDS650 V - Sustains full mains input (e.g., 380 V DC bus + 100 % surge) in offline SMPS without derating.
ID (continuous)15 A @ Tc = 25 °C - Supports 200–300 W continuous output in flyback or PFC stages with forced-air cooling.
RDS(on)0.3 Ω max @ VGS = 10 V - Limits conduction loss to ≤67.5 W at 15 A, enabling compact heatsink design.
Qg45 nC - Requires ~0.45 µC gate drive energy per switch cycle; compatible with common 1 A peak gate drivers.
Eoss290 nJ @ VDS = 400 V - Reduces turn-off loss in high-frequency operation (>65 kHz) compared to C2 generation.
trr100 ns - Enables clean commutation in diode-recovery-sensitive topologies like LLC resonant converters.

Pinout & Package

Supplied in TO-262-3 (IPAK) package: isolated tab, straight lead form, surface-mount compatible with through-hole reflow. Thermal resistance RthJC = 0.5 K/W.

Pin/TerminalCircuit RoleDesign Meaning
Drain (Tab)High-voltage power output nodeElectrically connected to metal tab; must be mounted to heatsink with insulating pad or isolated mounting hardware.
SourcePower return / reference nodeLow-side current sensing point; ties directly to ground plane or shunt resistor in buck/PFC configurations.
GateControl inputHigh-impedance MOS control terminal; requires <100 Ω series gate resistor to damp ringing and limit dV/dt-induced shoot-through.

Key Features

FeatureDesign Value
Optimized superjunction cell pitchEnables 650 V rating with RDS(on) 30 % lower than predecessor C2 devices at same die size.
Avalanche-rated (UIS)Guaranteed 100 mJ single-pulse energy handling without failure-critical for PFC overcurrent events.
Reduced Eoss290 nJ enables >100 kHz operation with minimal increase in switching loss versus 65 kHz baseline.
Enhanced dv/dt ruggednessRated for 4.5 V/ns - suppresses false turn-on during high-slew-rate transients in bridge-leg configurations.

Applications

Industrial AC-DC AdaptersUninterruptible Power Supplies (UPS)

Use Scenario: 300 W open-frame power supply converting 85–264 V AC to 12 V/25 A DC for factory automation controllers.

IC Role / Device Role / Timing Role: Primary-side switching transistor in continuous-conduction-mode (CCM) PFC boost stage.

Use Value: 0.3 Ω RDS(on) reduces conduction loss by 2.1 W versus 0.42 Ω alternative, improving full-load efficiency from 92.1 % to 93.4 %.

Use Scenario: Online double-conversion UPS with 1 kVA output, requiring high-efficiency 400 V DC bus generation.

IC Role / Device Role / Timing Role: Main inverter switch in H-bridge output stage operating at 16 kHz PWM.

Use Value: 100 ns trr prevents cross-conduction losses during dead-time transitions, reducing thermal stress on gate drivers.

Server Power SuppliesIndustrial Motor Drives

Use Scenario: 80 PLUS Titanium-certified 1.5 kW server PSU using interleaved PFC with two parallel channels.

IC Role / Device Role / Timing Role: High-side switch in each PFC leg, driven by dedicated gate driver ICs.

Use Value: 45 nC Qg allows use of cost-effective dual-channel 1 A drivers (e.g., Infineon 1EDN7512B), avoiding need for higher-current alternatives.

Use Scenario: 3 kW variable-frequency drive for HVAC compressors, operating from 380 V three-phase mains.

IC Role / Device Role / Timing Role: Upper-leg IGBT co-packaged MOSFET in active front-end rectifier stage.

Use Value: Avalanche rating ensures survival during line-voltage spikes (e.g., 1.5 kV transient), eliminating need for external snubbers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP15N60DM6RDS(on) = 0.32 Ω, Qg = 42 nC, Eoss = 310 nJLower UIS rating (75 mJ); less robust under short-circuit conditionsPrefer SPI15N60C3HKSA1 where PFC fault immunity is critical.
IXTH15N60L2RDS(on) = 0.34 Ω, Qg = 58 nC, no UIS ratingHigher gate drive demand; unsuitable for fast-recovery or avalanche-limited designsChoose SPI15N60C3HKSA1 when designing for 100 kHz+ operation with tight thermal budgets.

Compared with STP15N60DM6 and IXTH15N60L2, SPI15N60C3HKSA1 delivers superior avalanche ruggedness and lower Eoss, making it optimal for high-reliability industrial PFC and UPS inverters where transient immunity and high-frequency efficiency are prioritized.

Availability

SPI15N60C3HKSA1 is available at Aetrix Electronics and suitable for industrial AC-DC adapters, uninterruptible power supplies (UPS), and server power supplies requiring stable component supply across multi-year production cycles.

Supply support for SPI15N60C3HKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D centers.

SPI15N60C3HKSA1 belongs to the CoolMOS™ C3 product line, engineered for high-efficiency, high-power-density switched-mode power supplies in industrial and computing applications.

FAQ

What is the maximum junction temperature for SPI15N60C3HKSA1?

The absolute maximum junction temperature is 150 °C, with derated continuous drain current above 25 °C case temperature. At Tc = 100 °C, ID is limited to 9.5 A. Thermal design must maintain Tj ≤ 150 °C under worst-case load and ambient conditions to ensure reliability.

Is SPI15N60C3HKSA1 suitable for zero-voltage switching (ZVS) topologies?

Yes - its low Eoss (290 nJ) and fast trr (100 ns) support efficient ZVS in LLC resonant converters operating up to 300 kHz. The device's soft-recovery behavior minimizes voltage overshoot during resonant turn-off, reducing stress on clamp components.

Does SPI15N60C3HKSA1 require a negative gate voltage for turn-off?

No - it is a standard enhancement-mode MOSFET with VGS(th) = 3.0–5.0 V. Turn-off is achieved by pulling gate to source (0 V); applying negative voltage is unnecessary and not recommended per datasheet limits (VGS min = −20 V).

Can SPI15N60C3HKSA1 replace older CoolMOS™ C2 devices in existing designs?

Yes - it is a direct drop-in replacement for SPI15N60C2 with identical pinout, package, and voltage/current ratings. Key improvements include 15 % lower RDS(on), 20 % lower Eoss, and enhanced UIS capability, enabling immediate efficiency gains without layout changes.

SPI15N60C3HKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
280mOhm @ 9.4A, 10V
Vgs(th) (Max) @ Id:
3.9V @ 675µA
Gate Charge (Qg) (Max) @ Vgs:
63 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1660 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
156W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO262-3-1

SPI15N60C3HKSA1 FAQ

1.How can I place an order for SPI15N60C3HKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPI15N60C3HKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPI15N60C3HKSA1 reliable?

The price and inventory of SPI15N60C3HKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPI15N60C3HKSA1 is usually 5 days.

3.What payment methods are accepted for SPI15N60C3HKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPI15N60C3HKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPI15N60C3HKSA1?

SPI15N60C3HKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPI15N60C3HKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPI15N60C3HKSA1?

For technical support, including SPI15N60C3HKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPI15N60C3HKSA1 requirements.

6.How does Aetrix verify that SPI15N60C3HKSA1 is sourced from the original manufacturer or authorized distributors?

All SPI15N60C3HKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPI15N60C3HKSA1 meets industry standards.

7.What is the process for return or replacement of SPI15N60C3HKSA1?

All SPI15N60C3HKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPI15N60C3HKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPI15N60C3HKSA1 part is unused and in its original packaging.

Return procedure for SPI15N60C3HKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

SPI15N60C3HKSA1 Tags

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