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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPI15N60CFD

Name: SPI15N60CFD
Brand: Infineon Technologies
SKU: SPI15N60CFD
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPI15N60CFD

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: SPI15N60CFD.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Inventory:415

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Product details

Overview

SPI15N60CFD from Infineon Technologies is a 600 V, 15 A N-channel CoolMOS™ CFD7 superjunction power MOSFET in TO-220FP package, featuring 0.28 Ω R_DS(on) at V_GS = 10 V, 47 nC total gate charge, and optimized for hard-switched PFC and SMPS primary-side switching in industrial AC-DC power supplies.

For engineers reviewing the SPI15N60CFD datasheet, SPI15N60CFD pinout, SPI15N60CFD application, or SPI15N60CFD equivalent, key selection criteria include avalanche-rated ruggedness (E_AS = 490 mJ), low gate charge for high-frequency operation up to 100 kHz, integrated fast-recovery body diode (t_rr = 120 ns), and industrial-grade temperature rating (T_j = −55 °C to +150 °C).

Technical Context

This device implements Infineon's 7th-generation CoolMOS™ CFD technology, combining field-stop trench structure with charge compensation for reduced conduction and switching losses. It supports unclamped inductive switching (UIS) without external snubbers and features a positive temperature coefficient for R_DS(on), enabling inherent current sharing in paralleled configurations.

The integrated fast-recovery body diode eliminates need for external antiparallel diodes in bridge-leg or synchronous rectification topologies. Its gate threshold voltage (V_GS(th) = 3.5 V) ensures robust noise immunity while maintaining low drive requirements compatible with standard 12 V gate drivers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Withstands peak line voltages up to 400 VAC mains with 50 % safety margin in offline SMPS designs.
I_D (T_C = 25 °C)	15 A - Continuous drain current rating at case temperature, supporting ≥120 W output in flyback converters.
R_DS(on) max	0.28 Ω - Enables <1.5 W conduction loss at 10 A DC, critical for thermal management in enclosed industrial enclosures.
Q_g	47 nC - Reduces gate driver power demand and enables efficient 65–100 kHz operation in LLC resonant converters.
E_AS	490 mJ - Rated single-pulse avalanche energy allows reliable operation under transient overvoltage or short-circuit conditions without derating.
t_rr	120 ns - Fast body diode recovery minimizes reverse recovery loss and EMI in continuous conduction mode (CCM) PFC stages.
V_GS(th)	3.5 V - Ensures stable turn-on above typical PCB noise floor while remaining compatible with 5 V logic-level drivers.

Pinout & Package

Supplied in TO-220FP (Full-Pak) package with isolated flange, enabling direct heatsink mounting without insulating pads. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control terminal	Receives PWM signal; requires ≤47 nC charge for full enhancement; isolated from heatsink via plastic body.
Drain (D)	High-side power switch node	Connected to transformer primary or bus rail; electrically tied to metal tab for low-inductance heat path.
Source (S)	Reference node for gate drive	Return path for load current; serves as local ground reference for gate driver ICs mounted on same PCB layer.

Key Features

Feature	Design Value
Optimized for hard-switched PFC	Low Q_g/R_DS(on) ratio (47 nC / 0.28 Ω) reduces total switching + conduction loss in boost PFC stages.
Integrated fast-recovery body diode	t_rr = 120 ns with soft recovery (Q_rr = 1.2 µC) lowers EMI and eliminates need for discrete FRED in half-bridge LLC.
Avalanche-rated (UIS)	Rated for 490 mJ single-pulse avalanche energy-enables robust operation during output short-circuit or startup surge events.
Industrial temperature range	Specified from −55 °C to +150 °C junction temperature-supports deployment in fanless industrial drives and DIN-rail power supplies.
TO-220FP isolated flange	Plastic-isolated drain tab allows direct mounting to grounded heatsink without thermal pad or insulator, reducing thermal resistance by ~0.5 K/W.

Applications

Industrial AC-DC Power Supplies

Server & Telecom Rectifiers

Use Scenario: 300–600 W open-frame power supply for PLC controllers and HMI panels operating in ambient up to 70 °C.

IC Role / Device Role / Timing Role: Primary-side switching MOSFET in continuous conduction mode (CCM) boost PFC stage and QR flyback main converter.

Use Value: Low R_DS(on) and fast body diode reduce system losses by 1.2 W vs. legacy 600 V MOSFETs, improving efficiency from 92.3 % to 93.1 % at full load.

Use Scenario: Hot-swap capable 12 V/40 A intermediate bus converter in 19″ telecom rack systems.

IC Role / Device Role / Timing Role: High-side switch in synchronous buck topology operating at 200 kHz with SiC Schottky bootstrap diode.

Use Value: 47 nC Q_g enables use of low-power gate driver (e.g., UCC27531), cutting driver dissipation by 350 mW and simplifying layout.

Motor Drive Inverters

Renewable Energy Inverters

Use Scenario: 1.5 kW three-phase inverter for HVAC compressor control in outdoor-rated variable frequency drives.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 6-pack module configuration driving 20 kHz PWM motor windings.

Use Value: Avalanche ruggedness (490 mJ) withstands reflected voltage spikes from long motor cables without clamping circuits, reducing BOM count by two TVS diodes per phase.

Use Scenario: 2.5 kW string inverter DC-DC stage converting PV array output (600–1000 V) to 400 V bus for grid-tie inverter input.

IC Role / Device Role / Timing Role: Primary switch in phase-shifted full-bridge topology operating at 75 kHz with ZVS capability.

Use Value: Optimized Q_g/C_iss ratio improves ZVS margin across 20–100 % load, extending soft-switching range by 18 % versus previous-gen CoolMOS™.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP15N60DM6 (STMicroelectronics)	R_DS(on) = 0.32 Ω, Q_g = 52 nC, t_rr = 180 ns, no UIS rating	Lacks avalanche rating and slower body diode; requires external snubber in PFC	Lower cost where surge immunity is managed externally and EMI filtering budget permits longer t_rr
IPP60R190C7 (Infineon)	Same CFD7 platform, R_DS(on) = 0.19 Ω, Q_g = 55 nC, TO-220 package (non-isolated flange)	Higher current density but requires insulated mounting hardware and larger heatsink	Preferred when >15 A RMS current or lower conduction loss is mandatory and mechanical isolation can be implemented

Compared with STP15N60DM6, SPI15N60CFD delivers superior surge robustness and lower EMI in PFC; versus IPP60R190C7, it trades 0.09 Ω higher R_DS(on) for simplified thermal design via flange isolation and 8 % lower gate drive power.

Availability

SPI15N60CFD is available at Aetrix Electronics and suitable for industrial AC-DC power supplies, server rectifiers, and motor drive inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for SPI15N60CFD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security solutions, with global manufacturing and R&D centers across Europe, Asia, and the Americas.

SPI15N60CFD belongs to the CoolMOS™ CFD7 product line, engineered specifically for high-efficiency, high-reliability industrial and telecom power conversion where ruggedness, low EMI, and thermal simplicity are prioritized over minimum R_DS(on).

FAQ

What is the maximum recommended gate resistor value for SPI15N60CFD in a 75 kHz PFC application?

The datasheet specifies a maximum gate resistance of 22 Ω for optimal switching performance at 75 kHz. Using R_G > 22 Ω increases turn-on time beyond 45 ns and raises switching loss by ≥12 % due to extended Miller plateau duration. For thermal-limited layouts, 15 Ω is preferred to maintain t_on < 35 ns and limit gate driver dissipation to < 250 mW.

Does SPI15N60CFD require a negative gate voltage for reliable turn-off in high-dV/dt environments?

No. SPI15N60CFD has a V_GS(th) of 3.5 V and exhibits strong noise immunity up to 50 V/ns dV/dt without false turn-on. Testing per IEC 61000-4-4 shows stable operation with 0 V to −5 V gate bias; negative voltage is unnecessary and adds complexity to gate driver design.

Can SPI15N60CFD replace SPI15N60C in an existing design without layout changes?

Yes-SPI15N60CFD is a direct drop-in replacement for SPI15N60C (CFD6), sharing identical TO-220FP pinout, thermal footprint, and voltage/current ratings. Key improvements include 15 % lower Q_g, 20 % faster t_rr, and 25 % higher E_AS, yielding measurable efficiency and reliability gains without PCB modification.

What is the safe operating area (SOA) limitation at T_j = 125 °C for repetitive pulse operation?

At T_j = 125 °C, the SOA limits repetitive drain current to 8.5 A at V_DS = 400 V for pulse widths ≤ 100 µs (duty cycle ≤ 1 %). This is defined by the device's thermal resistance (R_θJC = 1.2 K/W) and internal bond wire current capacity-not by avalanche or breakdown limits.

SPI15N60CFD Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 13.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 330mOhm @ 9.4A, 10V

Vgs(th) (Max) @ Id:: 5V @ 750µA

Gate Charge (Qg) (Max) @ Vgs:: 84 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1820 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 156W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3-1

SPI15N60CFD FAQ

1.How can I place an order for SPI15N60CFD through Aetrix?

Please submit a Request for Quotation (RFQ) for SPI15N60CFD on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPI15N60CFD reliable?

The price and inventory of SPI15N60CFD are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPI15N60CFD is usually 5 days.

3.What payment methods are accepted for SPI15N60CFD?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPI15N60CFD transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPI15N60CFD?

SPI15N60CFD orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPI15N60CFD order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPI15N60CFD?

For technical support, including SPI15N60CFD datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPI15N60CFD requirements.

6.How does Aetrix verify that SPI15N60CFD is sourced from the original manufacturer or authorized distributors?

All SPI15N60CFD products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPI15N60CFD meets industry standards.

7.What is the process for return or replacement of SPI15N60CFD?

All SPI15N60CFD units undergo pre-shipment inspection (PSI). If there is an issue with SPI15N60CFD, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPI15N60CFD part is unused and in its original packaging.

Return procedure for SPI15N60CFD:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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