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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPI21N10

Name: SPI21N10
Brand: Infineon Technologies
SKU: SPI21N10
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPI21N10

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: SPI21N10.pdf

Description:: MOSFET N-CH 100V 21A TO262-3

Quantity:: RFQ Add To RFQ list

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Inventory:6,875

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Product details

Overview

SPI21N10 from Infineon Technologies is an N-channel enhancement-mode SIPMOS™ power MOSFET in PG-TO262-3-1 package, rated for 100 V V_DS, 21 A continuous drain current at T_C = 25 °C, and 80 mΩ R_DS(on) max at V_GS = 10 V. It operates up to 175 °C junction temperature, features avalanche rating (E_AS = 130 mJ), and is RoHS-compliant - used in industrial motor drives and DC-DC converter primary-side switching.

For engineers reviewing the SPI21N10 datasheet, SPI21N10 pinout, SPI21N10 application, or SPI21N10 equivalent, key selection criteria include its 100 V breakdown voltage, 65–80 mΩ on-resistance range, 1.7 K/W thermal resistance (junction-to-case), gate charge profile (Q_g = 28.9–38.4 nC), and reverse diode forward voltage (V_SD = 0.94–1.25 V at I_F = 21 A).

Technical Context

This MOSFET employs a planar SIPMOS™ process optimized for high-voltage ruggedness and fast switching with controlled dv/dt (6 kV/µs). Its gate threshold voltage (2.1–4.0 V) enables reliable turn-on with standard 10 V gate drivers, while the low output capacitance (C_oss = 140–186 pF) supports efficient hard-switching operation in SMPS topologies.

The integrated body diode exhibits fast recovery (t_rr = 65–81.5 ns, Q_rr = 153–192 nC) and low forward drop, making it suitable for synchronous rectification and freewheeling paths where reverse conduction occurs. Thermal design is supported by validated R_thJC = 1.7 K/W and derating curves for P_tot and I_D versus case temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	100 V - supports 48 V and 72 V bus systems with 2× safety margin
R_DS(on) max	80 mΩ at V_GS = 10 V, T_j = 25 °C - determines conduction loss in high-current switching paths
I_D continuous	21 A at T_C = 25 °C - defines maximum steady-state load current with heatsink
E_AS	130 mJ single-pulse avalanche energy - enables robustness against inductive switching transients
Q_g	28.9–38.4 nC - sets gate drive power requirement and switching speed trade-off
t_rr	65–81.5 ns - limits reverse recovery losses and EMI in hard-switched converters
R_thJC	1.7 K/W - enables thermal modeling from junction to heatsink interface

Pinout & Package

Package: PG-TO262-3-1 (surface-mount variant of TO-262, 3-pin, isolated tab, lead-free, RoHS-compliant).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to PCB ground plane or source return path
Pin 2 (Gate)	Control input	High-impedance MOSFET control node requiring <100 nA leakage and stable 10 V drive
Pin 3 (Drain)	Power output	High-voltage switching node; electrically connected to exposed metal tab for thermal conduction

Key Features

Feature	Design Value
Avalanche-rated operation	130 mJ single-pulse energy withstand without failure - eliminates need for external snubbers in inductive loads
dv/dt ruggedness	6 kV/µs - prevents false turn-on during high-slew-rate voltage transients in motor drives
High-temperature capability	175 °C maximum junction temperature - enables compact thermal design in sealed enclosures
Low gate charge	Q_g ≤ 38.4 nC - reduces driver IC power dissipation and enables >100 kHz switching in SMPS
Fast body diode	t_rr ≤ 81.5 ns, Q_rr ≤ 192 nC - minimizes reverse recovery loss in non-synchronous buck or flyback converters

Applications

Industrial Motor Drives

DC-DC Converters

Use Scenario: Half-bridge inverter stage for 3-phase BLDC motor control in HVAC blowers and pump controllers.

IC Role / Device Role / Timing Role: High-side and low-side switching element handling 21 A peak phase current at 100 V bus.

Use Value: Avalanche rating ensures survival during short-circuit events; 1.7 K/W R_thJC allows direct mounting to aluminum heatsink without thermal interface pads.

Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward converter for telecom power supplies.

IC Role / Device Role / Timing Role: Main power switch operating at 200 kHz with 50 V V_DS stress and 15 A RMS current.

Use Value: Low C_iss (650–865 pF) and Q_g reduce switching losses; 100 V rating provides margin over 48 V + transient spikes.

Uninterruptible Power Supplies

Automotive DC-AC Inverters

Use Scenario: Battery-fed H-bridge in offline UPS inverters delivering 1 kVA sinusoidal output.

IC Role / Device Role / Timing Role: Bidirectional switching device in full-bridge topology, conducting 21 A continuous with 100 V blocking.

Use Value: 175 °C T_jmax supports operation in fanless UPS enclosures; RoHS compliance meets EU WEEE requirements.

Use Scenario: On-board charger (OBC) DC-AC stage converting 400 V battery to AC for grid feedback.

IC Role / Device Role / Timing Role: High-voltage bridge leg switch in two-level inverter, subject to 100 V DC link and 6 kV/µs dv/dt stress.

Use Value: dv/dt rating prevents spurious turn-on during fast voltage transitions; PG-TO262 package enables automated SMT assembly.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF540NPBF	100 V V_DS, 33 A I_D, 44 mΩ R_DS(on), TO-220 package, no avalanche rating	Higher current but larger footprint and no guaranteed avalanche energy	Prefer when lower conduction loss is critical and layout allows TO-220; avoid in unclamped inductive loads
STP22NF10	100 V V_DS, 22 A I_D, 60 mΩ R_DS(on), TO-220 package, 100 mJ E_AS	Slightly lower avalanche energy and higher R_DS(on); same thermal resistance class	Acceptable for cost-sensitive designs where 130 mJ margin is not required; verify gate drive compatibility

Compared with IRF540NPBF and STP22NF10, SPI21N10 offers superior avalanche ruggedness (130 mJ vs. none or 100 mJ) and surface-mount PG-TO262 packaging for automated assembly, while maintaining competitive R_DS(on) and thermal performance - ideal for space-constrained industrial inverters.

Availability

SPI21N10 is available at Aetrix Electronics and suitable for industrial motor drives, DC-DC converters, uninterruptible power supplies, and automotive DC-AC inverters requiring stable component supply and long-term lifecycle support.

Supply support for SPI21N10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

SPI21N10 belongs to the SIPMOS™ family of high-voltage power MOSFETs engineered for rugged switching in motor control, UPS, and industrial power conversion - emphasizing avalanche capability, thermal reliability, and RoHS compliance.

FAQ

What is the maximum gate-source voltage rating for SPI21N10?

The absolute maximum gate-source voltage is ±20 V. Operation beyond ±20 V risks permanent gate oxide damage. Recommended gate drive is 10 V for full enhancement, with 0 V to ensure reliable turn-off. Gate drive circuits must limit transient overshoot using clamping diodes or RC snubbers.

Does SPI21N10 have an integrated body diode, and what are its key parameters?

Yes, SPI21N10 includes a monolithic body diode rated for 21 A continuous forward current at T_C = 25 °C. Key parameters include V_SD = 0.94–1.25 V at I_F = 21 A, t_rr = 65–81.5 ns, and Q_rr = 153–192 nC - enabling use in freewheeling and non-synchronous rectification without external diodes.

Can SPI21N10 be used in parallel configurations?

Yes, SPI21N10 supports paralleling due to its positive temperature coefficient of R_DS(on), which promotes current sharing. Successful implementation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling via shared heatsink. Derate total current by 15% for 2-device parallel operation.

Is SPI21N10 suitable for automotive applications per AEC-Q101?

No - SPI21N10 is not AEC-Q101 qualified. While it operates up to 175 °C and meets RoHS, it lacks automotive-specific qualification testing (e.g., HTGB, HTRB, ESD). For automotive use, consider Infineon's AEC-Q101-qualified variants such as IPD22N10N3G or IPA22N10N3G.

SPI21N10 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 80mOhm @ 15A, 10V

Vgs(th) (Max) @ Id:: 4V @ 44µA

Gate Charge (Qg) (Max) @ Vgs:: 38.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 865 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 90W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3-1

SPI21N10 FAQ

1.How can I place an order for SPI21N10 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPI21N10 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPI21N10 reliable?

The price and inventory of SPI21N10 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPI21N10 is usually 5 days.

3.What payment methods are accepted for SPI21N10?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPI21N10 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPI21N10?

SPI21N10 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPI21N10 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPI21N10?

For technical support, including SPI21N10 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPI21N10 requirements.

6.How does Aetrix verify that SPI21N10 is sourced from the original manufacturer or authorized distributors?

All SPI21N10 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPI21N10 meets industry standards.

7.What is the process for return or replacement of SPI21N10?

All SPI21N10 units undergo pre-shipment inspection (PSI). If there is an issue with SPI21N10, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPI21N10 part is unused and in its original packaging.

Return procedure for SPI21N10:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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