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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPI47N10

Name: SPI47N10
Brand: Infineon Technologies
SKU: SPI47N10
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPI47N10

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: SPI47N10.pdf

Description:: MOSFET N-CH 100V 47A TO262-3

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Product details

Overview

SPI47N10 from Infineon Technologies is an N-channel enhancement-mode SIPMOS™ power MOSFET rated for 100 V drain-source voltage, 47 A continuous drain current at T_C = 25 °C, and 33 mΩ maximum R_DS(on) at V_GS = 10 V. It features avalanche rating, 6 kV/µs dv/dt capability, and operates up to 175 °C junction temperature-commonly deployed in DC-DC converters, motor drives, and industrial power switching circuits.

For engineers reviewing the SPI47N10 datasheet, SPI47N10 pinout, SPI47N10 application, or SPI47N10 equivalent, key selection criteria include its P-TO262-3-1 package thermal resistance (R_thJC = 0.85 K/W), gate charge profile (Q_g = 70–105 nC), reverse diode forward voltage (V_SD = 1.1–1.5 V), and safe operating area (SOA) limits under pulsed conditions.

Technical Context

This device implements a planar high-voltage silicon power MOSFET architecture optimized for ruggedness and fast switching in hard-switched topologies. Its avalanche-rated design supports unclamped inductive switching, while the 6 kV/µs dv/dt rating ensures immunity to parasitic turn-on in high-noise environments.

The gate threshold voltage (2.1–4.0 V) and low gate plateau voltage (6.03 V typical) enable reliable drive with standard 10 V logic-level gate drivers. Dynamic parameters-including C_iss = 2000–2500 pF, Q_gd = 29–43.5 nC, and t_r/t_f ≤ 36/22.5 ns-support efficient operation in 100 kHz–500 kHz SMPS designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage before breakdown; defines use in 48 V and 72 V bus systems.
R_DS(on) max	33 mΩ at V_GS = 10 V, I_D = 33 A - Directly determines conduction loss and heatsink sizing in continuous operation.
I_D cont	47 A at T_C = 25 °C - Specifies maximum steady-state current with case heatsinking; derates to 33 A at 100 °C case.
E_AS	400 mJ single-pulse - Enables robustness against inductive energy spikes without external snubbers.
dv/dt rating	6 kV/µs - Prevents false triggering during fast voltage transients in bridge-leg configurations.
T_j max	175 °C - Allows operation in sealed enclosures or high-ambient industrial environments without derating.
Q_g	70–105 nC - Determines gate driver power requirement and switching loss trade-off in high-frequency designs.

Pinout & Package

SPI47N10 uses the P-TO262-3-1 package: a surface-mount variant of TO-262 with isolated drain tab, 3-pin configuration, and JEDEC-standard footprint for PCB mounting and thermal management.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically connected to metal tab; requires insulated mounting or direct heatsink contact with thermal pad.
Source	Reference node for gate drive and current return	Low-inductance connection point for source loop; critical for minimizing switching noise and shoot-through risk.
Gate	Control input for channel modulation	High-impedance MOS gate requiring controlled slew rate; susceptible to ESD and ringing without proper RC damping.

Key Features

Feature	Design Value
Avalanche energy rating	400 mJ single-pulse - Eliminates need for external clamping in flyback or relay-driving applications.
High dv/dt immunity	6 kV/µs - Ensures stable operation in half-bridge and LLC resonant converters with fast edge rates.
Extended temperature range	−55 °C to +175 °C - Supports deployment in automotive engine compartments and industrial motor control cabinets.
Low gate threshold variation	V_GS(th) = 2.1–4.0 V - Enables predictable turn-on timing across temperature and process corners.
Optimized body diode	V_SD = 1.1–1.5 V, t_rr = 100–150 ns - Reduces reverse recovery loss in synchronous rectification and freewheeling paths.

Applications

Motor Drive Inverter

Industrial DC-DC Converter

Use Scenario: Three-phase BLDC inverter stage driving 1–5 kW permanent magnet motors in HVAC compressors.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 6-pack configuration; handles 47 A peak phase current with <100 ns switching transitions.

Use Value: Avalanche rating absorbs back-EMF spikes during commutation; 175 °C rating permits compact heatsink integration near motor windings.

Use Scenario: Primary-side switch in isolated 48 V–12 V bidirectional DC-DC converter for telecom power shelves.

IC Role / Device Role / Timing Role: Main power switch operating at 200 kHz with ZVS-assisted soft switching; conducts 47 A during on-time.

Use Value: Low Q_gd/Q_g ratio improves ZVS margin; 33 mΩ R_DS(on) minimizes conduction loss at full load.

UPS Output Stage

EV Onboard Charger (OBC) PFC

Use Scenario: Output H-bridge in online double-conversion UPS delivering clean 230 VAC sine wave to critical IT loads.

IC Role / Device Role / Timing Role: Final-stage power switch handling 47 A RMS output current; subjected to repetitive short-circuit and overload events.

Use Value: 188 A pulsed current rating and 400 mJ E_AS ensure fault tolerance during grid transients and load dumps.

Use Scenario: Boost switch in 3.3 kW two-stage OBC front-end PFC stage interfacing 230 VAC grid to 400 VDC bus.

IC Role / Device Role / Timing Role: Hard-switched boost transistor operating at 65 kHz; switches 47 A peak inductor current with 100 V blocking.

Use Value: 6 kV/µs dv/dt rating prevents spurious turn-on during high dV/dt across transformer leakage inductance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP48N10F7	R_DS(on) = 22 mΩ (lower), Q_g = 85 nC (higher), TO-220 package	Lacks avalanche rating; not qualified for unclamped inductive switching	Prefer where conduction loss dominates and SOA stress is minimal
IRFP4710	R_DS(on) = 35 mΩ (slightly higher), Q_g = 120 nC (significantly higher), TO-247 package	Higher gate drive power required; slower switching due to larger Crss	Choose when legacy board layout mandates TO-247 footprint and thermal mass is available

Compared with STP48N10F7 and IRFP4710, SPI47N10 offers superior avalanche ruggedness and lower gate charge per unit R_DS(on), making it optimal for space-constrained, high-reliability industrial switching where transient immunity and thermal efficiency are prioritized over raw conduction loss minimization.

Availability

SPI47N10 is available at Aetrix Electronics and suitable for motor drive inverters, industrial DC-DC converters, UPS output stages, and EV onboard charger PFC circuits requiring stable component supply and long-term lifecycle support.

Supply support for SPI47N10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global manufacturing and R&D centers.

SPI47N10 belongs to the SIPMOS® family-designed specifically for high-efficiency, high-ruggedness power switching in industrial motor control, renewable energy inverters, and server power supplies.

FAQ

What is the maximum allowable gate-source voltage for SPI47N10?

The absolute maximum gate-source voltage is ±20 V. Operation beyond this risks irreversible oxide damage. Recommended drive is 10 V for full enhancement, with gate resistors selected to limit peak current during switching and suppress ringing. Gate drive circuits must include clamping (e.g., Zener diodes) if using bootstrap or level-shifted drivers.

Does SPI47N10 require a heatsink in continuous 47 A operation?

Yes. At 47 A and 33 mΩ R_DS(on), conduction loss exceeds 73 W-exceeding the 175 W P_tot rating only if case temperature remains at 25 °C. Real-world thermal design requires a heatsink achieving ≤0.85 K/W junction-to-case + case-to-ambient resistance to maintain T_j < 150 °C under full load.

Can SPI47N10 replace SPB47N10 or SPP47N10 in existing designs?

Yes, with mechanical and thermal verification. All three share identical electrical specs and die, differing only in package: SPI47N10 (P-TO262-3-1), SPB47N10 (P-TO263-3-2), and SPP47N10 (P-TO220-3-1). Footprint, solder thermal mass, and heatsink interface must be validated for P-TO262's flange-mount configuration and lower R_thJA on PCB.

Is the body diode suitable for synchronous rectification?

It is usable but suboptimal. With t_rr = 100–150 ns and Q_rr = 400–600 nC, the body diode introduces measurable reverse recovery loss in high-frequency (>100 kHz) synchronous rectifiers. For best efficiency, external Schottky or GaN FETs are recommended; SPI47N10's diode serves primarily for freewheeling and fault protection.

SPI47N10 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 47A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 33mOhm @ 33A, 10V

Vgs(th) (Max) @ Id:: 4V @ 2mA

Gate Charge (Qg) (Max) @ Vgs:: 105 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2500 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 175W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3-1

SPI47N10 FAQ

1.How can I place an order for SPI47N10 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPI47N10 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPI47N10 reliable?

The price and inventory of SPI47N10 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPI47N10 is usually 5 days.

3.What payment methods are accepted for SPI47N10?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPI47N10 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPI47N10?

SPI47N10 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPI47N10 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPI47N10?

For technical support, including SPI47N10 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPI47N10 requirements.

6.How does Aetrix verify that SPI47N10 is sourced from the original manufacturer or authorized distributors?

All SPI47N10 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPI47N10 meets industry standards.

7.What is the process for return or replacement of SPI47N10?

All SPI47N10 units undergo pre-shipment inspection (PSI). If there is an issue with SPI47N10, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPI47N10 part is unused and in its original packaging.

Return procedure for SPI47N10:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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