Infineon Technologies SPI80N03S2L-04

Overview

SPI80N03S2L-04 from Infineon Technologies is an N-channel enhancement-mode logic-level power MOSFET in TO262-3-1 package, rated for 30 V V_DS, 80 A continuous drain current at T_C = 25 °C, and 3.9 mΩ R_DS(on) at V_GS = 10 V. It features avalanche rating, 175 °C maximum junction temperature, and optimized gate charge × R_DS(on) figure-of-merit for high-efficiency DC-DC and motor drive stages.

For engineers reviewing the SPI80N03S2L-04 datasheet, SPI80N03S2L-04 pinout, SPI80N03S2L-04 application, or SPI80N03S2L-04 equivalent, key selection criteria include its 3.2–3.9 mΩ R_DS(on) at 10 V drive, 79–105 nC total gate charge, 188 W power dissipation at T_C = 25 °C, and robust dv/dt immunity up to 6 kV/µs.

Technical Context

This OptiMOS™ device uses trench-gate silicon technology to achieve low on-resistance with fast switching dynamics. Its gate threshold voltage (1.2–2.0 V) enables direct logic-level drive from 3.3 V or 5 V controllers, while the 2930–3900 pF input capacitance and 268–402 pF reverse transfer capacitance support stable operation in hard-switched topologies.

The MOSFET integrates a robust body diode with 50–62 ns reverse recovery time and 61–76 nC Q_rr, enabling reliable synchronous rectification and freewheeling in buck converters and H-bridge motor drivers without external Schottky supplementation.

Key Specifications

Pinout & Package

Package: PG-TO262-3-1 (standard through-hole variant of TO-262, 3-pin, isolated tab). Thermal resistance R_thJC = 0.51–0.8 K/W supports efficient heat transfer to heatsink via drain-connected tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Compared with IRF1404PbF and STL220N3LLH6, SPI80N03S2L-04 delivers optimal balance of low Q_g (79–105 nC), moderate R_DS(on) (3.2–3.9 mΩ), and through-hole TO262 thermal interface-making it ideal for medium-frequency, high-current applications requiring serviceability and heatsink flexibility.

Availability

SPI80N03S2L-04 is available at Aetrix Electronics and suitable for DC-DC converters, motor control systems, and industrial power supplies requiring stable component supply, long-lifecycle support, and traceable sourcing from authorized channels.

Supply support for SPI80N03S2L-04 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

SPI80N03S2L-04 belongs to the OptiMOS™ 30 V product line, engineered for high-current, high-efficiency switching in battery-powered and mains-fed industrial equipment where thermal robustness and logic-level drivability are essential.

FAQ

What is the maximum continuous drain current for SPI80N03S2L-04 at 100 °C case temperature?

At T_C = 100 °C, the continuous drain current is derated to approximately 52 A, based on the ID vs. TC curve (Page 4, Figure 2) and the 0.8 K/W R_thJC limit. This reflects thermal constraints-not electrical limits-and assumes adequate heatsinking to maintain case temperature.

Does SPI80N03S2L-04 require a gate resistor for safe operation in a 100 kHz buck converter?

Yes-a gate resistor between 2.2 Ω and 10 Ω is recommended to damp ringing and control dV/dt during switching. The device's 268–402 pF Crss and 79–105 nC Q_g make it susceptible to oscillation without proper gate impedance, especially with high-speed drivers and parasitic PCB inductance.

Can SPI80N03S2L-04 replace a standard 30 V MOSFET in an existing TO-220 layout?

No-it uses PG-TO262-3-1, which shares pinout alignment with TO-220 but has a different leadframe geometry and tab isolation. Mechanical fit may appear similar, but creepage/clearance, thermal pad contact, and mounting hole spacing differ; redesign of footprint and heatsink interface is required.

Is the body diode suitable for synchronous rectification in a 500 kHz LLC resonant converter?

Yes-the body diode has 50–62 ns t_rr and 61–76 nC Q_rr, enabling use in synchronous rectification at ≤500 kHz with appropriate dead-time tuning. However, for best efficiency above 300 kHz, pairing with an external SiC Schottky is recommended to reduce recovery-related losses.