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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPI80N06S-08

Name: SPI80N06S-08
Brand: Infineon Technologies
SKU: SPI80N06S-08
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPI80N06S-08

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-262-3 Long Leads, I2PAK, TO-262AA

Datasheet:: SPI80N06S-08.pdf

Description:: MOSFET N-CH 55V 80A TO262-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SPI80N06S-08 from Infineon Technologies is an N-channel enhancement-mode SIPMOS® power transistor in PG-TO262-3-1 package, rated for 55 V V_DS, 80 A continuous drain current at T_C = 100 °C, and 7.7 mΩ max R_DS(on) (SMD version), qualified to AEC-Q101 for automotive applications.

For engineers reviewing the SPI80N06S-08 datasheet, SPI80N06S-08 pinout, SPI80N06S-08 application, or SPI80N06S-08 equivalent, key selection criteria include avalanche energy rating (700 mJ single-pulse), dv/dt immunity (6 kV/µs), thermal resistance (R_thJC = 0.38–0.5 K/W), and gate charge (Q_g = 125–187 nC) for high-frequency switching in motor control and DC-DC converters.

Technical Context

This device operates as a high-current, low-R_DS(on) power switch with robust unclamped inductive switching (UIS) capability up to T_j = 175 °C and built-in avalanche-rated reverse diode. Its gate threshold voltage (2.1–4.0 V) enables reliable turn-on with standard 10 V gate drive.

Dynamic characteristics include C_iss = 3660 pF, C_oss = 1075 pF, and Crss = 540 pF at V_DS = 0 V, supporting fast switching with t_r = 53 ns and t_f = 32 ns under defined test conditions (V_DD = 30 V, I_D = 80 A, R_G = 2.4 Ω).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage before avalanche onset; defines usable bus voltage range in 48 V systems.
I_D (continuous)	80 A at T_C = 100 °C - Sustained load current capability with standard heatsinking; limited by bondwire not silicon.
R_DS(on) max	7.7 mΩ (SMD version) - On-state conduction loss of ~49 W at 80 A; critical for thermal design in high-efficiency power stages.
E_AS	700 mJ (single pulse) - Energy-handling capacity during inductive turn-off; enables robust operation without external snubbers.
dv/dt rating	6 kV/µs - Immunity to false triggering from rapid voltage transients in noisy motor-drive environments.
Q_g	125–187 nC - Total gate charge determining driver strength requirement; impacts switching loss and gate driver selection.
T_j max	175 °C - Junction temperature limit enabling operation in under-hood automotive locations with minimal derating.

Pinout & Package

The SPI80N06S-08 uses the PG-TO262-3-1 package: a surface-mount-compatible variant of TO-262 with isolated tab, 3-terminal configuration, and lead-free green finish compliant with RoHS.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically connected to case; requires insulated mounting or direct thermal pad connection to PCB copper pour.
Source	Reference node for gate drive and current sensing	Low-inductance return path; used for shunt-based current monitoring in half-bridge configurations.
Gate	Control input for channel conduction	High-impedance MOSFET terminal requiring <20 V absolute max; sensitive to ESD and ringing without proper RC damping.

Key Features

Feature	Design Value
AEC-Q101 qualification	Validated for automotive powertrain and chassis applications including engine control modules and EPS systems.
Repetitive avalanche rating	Rated for unlimited repetitive UIS events up to T_j = 175 °C - eliminates need for external clamping in inductive loads.
MSL1 reflow compatibility	Withstands peak soldering temperatures up to 260 °C - supports automated SMT assembly without moisture-related failure.
Integrated body diode	105 ns t_rr, 30 nC Q_rr - enables synchronous rectification and freewheeling in buck and H-bridge topologies.
Thermal resistance R_thJC	0.38–0.5 K/W - enables >250 W dissipation with modest heatsink; critical for compact power module designs.

Applications

Automotive Engine Control Unit (ECU)

Industrial DC Motor Drive

Use Scenario: High-side switching of fuel injector solenoids in 12 V/48 V hybrid powertrains.

IC Role / Device Role / Timing Role: Power switch controlling precise 1–5 ms injection pulses with fast turn-on/turn-off (t_r/t_f < 60 ns).

Use Value: Low R_DS(on) minimizes coil heating; avalanche rating absorbs back-EMF without snubber components.

Use Scenario: Half-bridge leg in 2 kW BLDC motor controller for conveyor systems.

IC Role / Device Role / Timing Role: Low-side switching element operating at 20–50 kHz PWM frequency with 80 A peak phase current.

Use Value: 6 kV/µs dv/dt immunity prevents spurious turn-on during commutation; 175 °C rating sustains operation in enclosed enclosures.

Onboard Charger (OBC) Primary Switch

Server PSU OR-ing FET

Use Scenario: Primary-side switch in LLC resonant converter for EV onboard chargers.

IC Role / Device Role / Timing Role: Hard-switched MOSFET handling 55 V bus with 80 A pulsed current and high dv/dt stress.

Use Value: 700 mJ E_AS withstands startup surges and fault transients; low Crss reduces Miller-induced shoot-through risk.

Use Scenario: Hot-swap OR-ing FET in redundant 12 V server power distribution units.

IC Role / Device Role / Timing Role: Bidirectional current-handling switch with integrated body diode for seamless source switchover.

Use Value: 105 ns t_rr and low Q_rr minimize reverse recovery losses; AEC-Q101 ensures long-term reliability in 24/7 operation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4115PBF	R_DS(on) = 6.5 mΩ @ 10 V, V_DS = 55 V, but no AEC-Q101 qualification; higher Q_g (170 nC).	Not suitable for automotive production; acceptable for industrial UPS or lighting where qualification is not mandated.	Select only if AEC-Q101 is not required and lower R_DS(on) outweighs gate drive burden.
STP80NF55-08	V_DS = 55 V, I_D = 80 A, R_DS(on) = 8.5 mΩ, AEC-Q101 qualified; higher R_DS(on) and lower E_AS (500 mJ).	Compatible in same footprint but requires larger heatsink due to higher conduction loss and reduced avalanche margin.	Choose when cost sensitivity outweighs efficiency and ruggedness requirements in non-critical automotive subsystems.

Compared with IRFB4115PBF and STP80NF55-08, SPI80N06S-08 uniquely balances AEC-Q101 compliance, 700 mJ avalanche energy, and 7.7 mΩ R_DS(on), making it optimal for safety-critical automotive switching where both reliability and thermal performance are constrained.

Availability

SPI80N06S-08 is available at Aetrix Electronics and suitable for automotive engine control units, industrial motor drives, onboard chargers, and server power OR-ing circuits requiring stable component supply across multi-year production cycles.

Supply support for SPI80N06S-08 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

SPI80N06S-08 belongs to the SIPMOS® family-designed specifically for high-current, high-ruggedness switching in automotive and industrial power conversion where avalanche endurance and thermal stability are mission-critical.

FAQ

What is the maximum gate-source voltage rating for SPI80N06S-08?

The absolute maximum V_GS is ±20 V. Exceeding this risks permanent gate oxide damage. Recommended operating range is 0–10 V for full enhancement, with 5.4 V gate plateau voltage confirmed in gate charge curves. Gate drive circuits must include clamping or Zener protection to prevent overshoot during fast switching.

Is SPI80N06S-08 suitable for synchronous rectification?

Yes-the integrated body diode has t_rr = 105 ns and Q_rr = 30 nC at T_j = 25 °C, enabling use in synchronous rectifier configurations up to ~100 kHz. However, its forward voltage (V_SD = 0.9–1.3 V) is higher than dedicated Schottky diodes, so efficiency gains depend on duty cycle and load current.

How does thermal resistance vary between PG-TO262-3-1 and PG-TO263-3-2 packages?

R_thJC is identical (0.38–0.5 K/W) across SPB/SPI/SPP variants because chip die and internal construction are shared. The difference lies in R_thJA: PG-TO262-3-1 (SPI80N06S-08) achieves 40 K/W on 6 cm² PCB copper, while PG-TO263-3-2 (SPB80N06S-08) offers slightly better board-level cooling due to larger exposed drain area.

Does SPI80N06S-08 require external avalanche protection in motor drive applications?

No-its 700 mJ single-pulse E_AS and 30 mJ periodic E_AR at T_j = 175 °C are validated for repetitive unclamped inductive switching. This eliminates need for TVS or RCD snubbers in typical 48 V BLDC or stepper motor drivers, provided layout minimizes parasitic inductance.

SPI80N06S-08 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-262-3 Long Leads, I2PAK, TO-262AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 80A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 8mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 240µA

Gate Charge (Qg) (Max) @ Vgs:: 187 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3660 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO262-3-1

SPI80N06S-08 FAQ

1.How can I place an order for SPI80N06S-08 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPI80N06S-08 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPI80N06S-08 reliable?

The price and inventory of SPI80N06S-08 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPI80N06S-08 is usually 5 days.

3.What payment methods are accepted for SPI80N06S-08?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPI80N06S-08 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPI80N06S-08?

SPI80N06S-08 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPI80N06S-08 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPI80N06S-08?

For technical support, including SPI80N06S-08 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPI80N06S-08 requirements.

6.How does Aetrix verify that SPI80N06S-08 is sourced from the original manufacturer or authorized distributors?

All SPI80N06S-08 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPI80N06S-08 meets industry standards.

7.What is the process for return or replacement of SPI80N06S-08?

All SPI80N06S-08 units undergo pre-shipment inspection (PSI). If there is an issue with SPI80N06S-08, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPI80N06S-08 part is unused and in its original packaging.

Return procedure for SPI80N06S-08:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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