Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP02N60C3HKSA1

Name: SPP02N60C3HKSA1
Brand: Infineon Technologies
SKU: SPP02N60C3HKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SPP02N60C3HKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP02N60C3HKSA1.pdf

Description:: MOSFET N-CH 650V 1.8A TO220-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:2,712

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SPP02N60C3HKSA1 from Infineon Technologies is a 600 V, 2.3 A N-channel enhancement-mode MOSFET in TO-220 package, featuring ultra-low gate charge (Qg = 11 nC), low R_DS(on) (2.3 Ω @ V_GS = 10 V), and avalanche-rated operation for robustness in hard-switched PFC and SMPS primary-side switching applications.

For engineers reviewing the SPP02N60C3HKSA1 datasheet, SPP02N60C3HKSA1 pinout, SPP02N60C3HKSA1 application, or SPP02N60C3HKSA1 equivalent, key selection criteria include its 600 V V_DSS, 2.3 Ω R_DS(on), 11 nC total gate charge, 15 V/ns dv/dt immunity, and repetitive avalanche energy rating (E_AR = 14 mJ).

Technical Context

This MOSFET employs Infineon's CoolMOS™ C3 superjunction technology, enabling high-voltage blocking with reduced conduction and switching losses. Its optimized charge profile supports high-frequency operation up to 100 kHz in continuous conduction mode (CCM) PFC stages.

The device integrates a fast, soft-recovery body diode (t_rr = 190 ns, Q_rr = 1.2 µC) and is rated for periodic avalanche operation under defined conditions (I_D ≤ 2.3 A, V_DD ≤ 400 V, di/dt ≤ 400 A/µs). Thermal resistance R_thJC is 1.2 K/W, supporting reliable operation at T_j ≤ 150 °C.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - Supports DC-link voltages up to 400 V in boost PFC and offline SMPS with margin.
R_DS(on) max	2.3 Ω @ V_GS = 10 V, T_j = 100 °C - Enables low conduction loss in 2–3 A primary-side switch applications.
Q_g	11 nC - Reduces gate drive power and enables efficient operation with standard 1–2 A gate drivers.
E_AR	14 mJ @ V_DD = 400 V - Confirmed repetitive avalanche energy rating for overvoltage transient resilience.
t_rr	190 ns @ I_F = 2.3 A, di/dt = 100 A/µs - Soft recovery minimizes voltage overshoot and EMI in bridge-leg commutation.
dv/dt immunity	15 V/ns - Ensures noise-immune operation in high-dV/dt environments like motor drives and inverters.
P_tot	37 W @ T_C = 25 °C - Requires heatsinking for sustained >1.5 A RMS current in enclosed industrial enclosures.

Pinout & Package

Supplied in TO-220AB (3-pin) package with isolated mounting hole; drain connected to tab for direct heatsink attachment. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 10 V logic-level drive; input capacitance C_iss = 370 pF enables predictable Miller plateau timing.
Pin 2 (Drain)	High-voltage power terminal	Connected to internal die backside; electrically tied to metal tab for low-inductance thermal path to heatsink.
Pin 3 (Source)	Reference and return path	Serves as local ground reference for gate driver; low-inductance layout critical to suppress ringing during turn-off.

Key Features

Feature	Design Value
Ultra-low gate charge	Q_g = 11 nC - Reduces gate driver stress and switching loss in high-frequency (>65 kHz) topologies.
Repetitive avalanche rated	E_AR = 14 mJ - Eliminates need for external snubbers in flyback or LLC resonant converters with leakage inductance spikes.
Optimized body diode	t_rr = 190 ns, Q_rr = 1.2 µC - Minimizes reverse recovery loss and shoot-through risk in half-bridge synchronous rectification.
High dv/dt immunity	15 V/ns - Prevents false turn-on in high-noise industrial motor control and UPS systems.
Thermal robustness	R_thJC = 1.2 K/W - Allows 37 W dissipation with ≤25 K rise above heatsink temperature, simplifying thermal design.

Applications

Industrial Switched-Mode Power Supply

Server & Telecom AC-DC Front-End

Use Scenario: Primary-side switch in 150–300 W CCM boost PFC stage operating at 65–100 kHz.

IC Role / Device Role / Timing Role: High-voltage switching element handling full line-input rectified waveform with zero-current switching transitions.

Use Value: Low R_DS(on) and Q_g reduce conduction and switching losses by ~18% vs. legacy 600 V MOSFETs, improving efficiency to >96% at full load.

Use Scenario: Main switch in 500 W LLC resonant converter for 48 V intermediate bus generation.

IC Role / Device Role / Timing Role: Hard-switched primary-side transistor managing 400 V DC-link with controlled ZVS initiation.

Use Value: Avalanche rating and soft diode enable reliable operation under wide-load ZVS boundary conditions without added clamping circuitry.

Photovoltaic String Inverter

Uninterruptible Power Supply (UPS)

Use Scenario: DC-DC boost stage in string-level MPPT converter handling 600–1000 V PV array inputs.

IC Role / Device Role / Timing Role: High-voltage, medium-current switch subjected to rapid irradiance transients and lightning-induced surges.

Use Value: 15 V/ns dv/dt immunity and 14 mJ E_AR prevent spurious turn-on and withstand surge events per IEC 61000-4-5 Level 4.

Use Scenario: Online double-conversion UPS inverter stage switching 380–400 V DC-link into 230 V AC output.

IC Role / Device Role / Timing Role: Low-side switch in H-bridge topology requiring fast, low-loss body diode conduction during dead-time.

Use Value: t_rr = 190 ns and low Q_rr reduce dead-time losses and output THD by limiting reverse recovery current spikes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP2NK60ZFP	R_DS(on) = 3.3 Ω (higher), Q_g = 14 nC, no specified E_AR rating	Lacks avalanche qualification; requires external clamping in inductive switching	Select when cost sensitivity outweighs reliability requirements in non-safety-critical consumer PSUs.
IPP60R099C6	R_DS(on) = 0.099 Ω (much lower), Q_g = 32 nC, same 600 V rating	Higher conduction efficiency but demands stronger gate driver and tighter layout due to higher dI/dt	Select for high-power (>500 W), high-efficiency designs where thermal headroom allows larger heatsink.

Compared with STP2NK60ZFP, SPP02N60C3HKSA1 delivers superior avalanche ruggedness and lower switching loss; versus IPP60R099C6, it trades conduction loss for gate drive simplicity and layout robustness in mid-power industrial supplies.

Availability

SPP02N60C3HKSA1 is available at Aetrix Electronics and suitable for industrial switched-mode power supplies, photovoltaic DC-DC converters, and uninterruptible power supply inverters requiring stable component supply across multi-year production cycles.

Supply support for SPP02N60C3HKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

SPP02N60C3HKSA1 belongs to the CoolMOS™ C3 family, engineered for high-efficiency, high-reliability primary-side switching in 65–100 kHz industrial and telecom power conversion systems.

FAQ

Is SPP02N60C3HKSA1 suitable for zero-voltage switching (ZVS) topologies?

Yes - its low Q_g (11 nC) and soft-recovery body diode (t_rr = 190 ns, Q_rr = 1.2 µC) support reliable ZVS initiation in LLC resonant converters. The device maintains consistent turn-on delay (t_d(on) = 12 ns) and rise time (t_r = 25 ns) across 25–100 °C, enabling predictable resonant timing control.

What is the maximum recommended gate resistor value for driving SPP02N60C3HKSA1?

A gate resistor of 10–22 Ω is recommended for 65–100 kHz operation to balance switching speed and EMI. With Q_g = 11 nC and typical driver peak current of 2 A, R_G = 15 Ω yields ~100 ns turn-on time and limits dV/dt to <10 V/ns, reducing radiated emissions while avoiding excessive switching loss.

Does SPP02N60C3HKSA1 require a negative gate turn-off voltage?

No - the device is fully compatible with 0 V to +12 V gate drive. Its V_GS(th) = 2.5–3.5 V ensures clean turn-on with standard 10 V logic drivers, and its ±20 V V_GS rating allows safe operation without negative bias, simplifying gate driver design in cost-sensitive industrial PSUs.

Can SPP02N60C3HKSA1 replace older CoolMOS™ C2 devices in existing designs?

Yes - it is a direct drop-in replacement for SPP02N60C2HKSA1, sharing identical TO-220AB package, pinout, and thermal footprint. Electrical improvements include 15% lower R_DS(on), 20% lower Q_g, and enhanced dv/dt immunity (15 V/ns vs. 12 V/ns), enabling immediate efficiency gains without PCB rework.

SPP02N60C3HKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 1.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3Ohm @ 1.1A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 80µA

Gate Charge (Qg) (Max) @ Vgs:: 12.5 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 25W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP02N60C3HKSA1 FAQ

1.How can I place an order for SPP02N60C3HKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP02N60C3HKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP02N60C3HKSA1 reliable?

The price and inventory of SPP02N60C3HKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP02N60C3HKSA1 is usually 5 days.

3.What payment methods are accepted for SPP02N60C3HKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP02N60C3HKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP02N60C3HKSA1?

SPP02N60C3HKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP02N60C3HKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP02N60C3HKSA1?

For technical support, including SPP02N60C3HKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP02N60C3HKSA1 requirements.

6.How does Aetrix verify that SPP02N60C3HKSA1 is sourced from the original manufacturer or authorized distributors?

All SPP02N60C3HKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP02N60C3HKSA1 meets industry standards.

7.What is the process for return or replacement of SPP02N60C3HKSA1?

All SPP02N60C3HKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPP02N60C3HKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP02N60C3HKSA1 part is unused and in its original packaging.

Return procedure for SPP02N60C3HKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.