Infineon Technologies SPP03N60S5HKSA1
- Part No.:
- SPP03N60S5HKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
SPP03N60S5HKSA1.pdf
- Description:
- MOSFET N-CH 600V 3.2A TO220-3
- Quantity:
- Payment:

- Shipping:

Inventory:4,857
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Product details
Overview
SPP03N60S5 from Infineon Technologies is a 600 V, 3.2 A N-channel Cool MOS™ power transistor in PG-TO220 package, featuring RDS(on) = 1.4 Ω at VGS = 10 V and Tj = 25 °C, ultra-low gate charge (Qg = 12.4–16 nC), and periodic avalanche rating. It serves as a high-voltage switching device in offline SMPS primary-side power switches.
For engineers reviewing the SPP03N60S5 datasheet, SPP03N60S5 pinout, SPP03N60S5 application, or SPP03N60S5 equivalent, key selection criteria include its 20 V/ns dv/dt immunity, 100 mJ single-pulse avalanche energy, RthJC = 3.3 K/W thermal resistance, and suitability for continuous conduction mode (CCM) flyback and PFC boost stages.
Technical Context
This Cool MOS™ device employs superjunction technology to achieve low RDS(on) × area trade-off while maintaining 600 V blocking capability. Its gate threshold voltage (VGS(th) = 3.5–5.5 V) enables standard 10 V gate drive compatibility, and its low Ciss (420 pF typ.) and Crss (3.6 pF typ.) reduce switching losses in high-frequency converters.
The integrated body diode exhibits VSD = 1.0–1.2 V at IF = 3.2 A and trr = 1000–1700 ns, supporting quasi-resonant and ZVS topologies. Avalanche ruggedness (EAS = 100 mJ, IAR = 3.2 A) allows reliable operation under transient overvoltage conditions without external snubbers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - supports universal AC input (85–265 VAC) offline converters with margin for surge and ringing |
| RDS(on) | 1.4 Ω max at Tj = 25 °C - enables low conduction loss in <50 W SMPS designs with minimal heatsinking |
| Qg | 12.4–16 nC - reduces gate driver power requirement and enables >100 kHz switching in compact adapters |
| EAS | 100 mJ - withstands single-pulse inductive energy without failure in unclamped inductive switching |
| dv/dt | 20 V/ns - suppresses false turn-on in high-noise industrial and lighting ballast environments |
| RthJC | 3.3 K/W - allows direct mounting to heatsink for thermal management in sealed enclosures |
| trr | 1000–1700 ns - limits reverse recovery loss during hard-switched transitions in boost PFC stages |
Pinout & Package
Package: PG-TO220 (P-TO220-3-1), through-hole, isolated tab (drain-connected), RoHS-compliant, lead-free plating.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Source) | Power return path for load current | Low-inductance connection point for source loop routing; ties to PCB ground plane |
| 2 (Drain) | Main high-voltage power terminal | Connected to heatsink via isolated mounting; carries full DC bus current in SMPS primary |
| 3 (Gate) | Control input for MOSFET channel | High-impedance node requiring low-capacitance PCB trace and local decoupling to prevent oscillation |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate charge | Qg = 12.4–16 nC enables efficient 100–300 kHz operation with low-power gate drivers (e.g., 6561, UCC28056) |
| Periodic avalanche rated | Rated for repetitive IAR = 3.2 A pulses - eliminates need for external clamping in cost-sensitive flyback designs |
| Extreme dv/dt immunity | 20 V/ns rating prevents spurious turn-on during fast voltage transients in EMI-critical lighting applications |
| Ultra-low effective capacitances | Ciss = 420 pF, Crss = 3.6 pF - minimizes Miller effect and improves hard-switching efficiency |
| Improved transconductance | gfs = 1.8 S - delivers stable gain and predictable VGS-to-ID response across temperature |
Applications
| LED Driver Power Stage | Industrial SMPS Primary Switch |
|---|---|
Use Scenario: Constant-current LED driver operating from 230 VAC mains with active PFC and LLC half-bridge secondary. IC Role / Device Role / Timing Role: High-voltage switch in boost PFC pre-regulator stage, switching at 65–100 kHz. Use Value: Low Qg and Ciss reduce gate drive loss and improve power factor correction efficiency by ≥0.5% at full load. | Use Scenario: 36 W open-frame industrial power supply for PLC I/O modules with wide ambient range (−40 to +70 °C). IC Role / Device Role / Timing Role: Primary-side MOSFET in discontinuous conduction mode (DCM) flyback converter. Use Value: Avalanche rating (EAS = 100 mJ) ensures robustness against transformer leakage inductance spikes without snubber redesign. |
| AC-DC Adapter for Consumer Electronics | Ballast for HID Lamps |
Use Scenario: Compact 24 W USB-C PD adapter with dual-output (5 V/3 A, 9 V/2.22 A) and no-fan cooling. IC Role / Device Role / Timing Role: Main switch in QR flyback controller topology, operating up to 130 kHz peak frequency. Use Value: RDS(on) = 1.4 Ω and RthJC = 3.3 K/W allow full-load operation at 50 °C ambient with minimal copper area on PCB. | Use Scenario: Electronic ballast driving 70 W metal halide lamp with hot restrike capability. IC Role / Device Role / Timing Role: High-side switch in series-resonant half-bridge inverter stage. Use Value: 20 V/ns dv/dt immunity prevents false triggering during high-slew-rate resonant voltage transitions (>5 kV/µs). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP3NK60ZFP | RDS(on) = 2.2 Ω (higher), Qg = 11 nC (lower), EAS not specified | Lacks avalanche rating; requires external clamping in unregulated flyback | Prefer when gate drive power is critical and avalanche stress is absent |
| IPP60R190C6 | RDS(on) = 0.19 Ω (much lower), Qg = 22 nC (higher), 650 V rating | Better conduction loss but higher switching loss; needs stronger gate driver | Prefer for >100 W designs where thermal headroom is constrained |
Compared with STP3NK60ZFP, SPP03N60S5 offers superior avalanche ruggedness and lower RDS(on); compared with IPP60R190C6, it trades conduction efficiency for reduced gate drive complexity and lower system BOM cost in sub-50 W applications.
Availability
SPP03N60S5 is available at Aetrix Electronics and suitable for LED drivers, industrial SMPS, consumer AC-DC adapters, and HID lamp ballasts requiring stable component supply and long-term lifecycle support.
Supply support for SPP03N60S5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
SPP03N60S5 belongs to the Cool MOS™ S5 family, engineered for high-efficiency, high-reliability offline power conversion in cost-sensitive, space-constrained applications.
FAQ
Is SPP03N60S5 suitable for zero-voltage switching (ZVS) topologies?
Yes. Its low Coss (150 pF typ.) and controlled Qgd/Qgs ratio enable reliable ZVS turn-on in resonant LLC and phase-shifted full-bridge converters. The body diode's trr of 1000–1700 ns supports soft commutation when paired with appropriate dead-time tuning.
What is the maximum recommended gate resistor value for reliable switching?
A gate resistor of 10–22 Ω is recommended for standard 10 V gate drive. Values above 33 Ω increase switching time and may cause excessive heating during transition; values below 5 Ω risk gate oscillation due to PCB inductance interacting with low Ciss.
Does SPP03N60S5 require a negative gate turn-off voltage?
No. The device operates reliably with 0 V to +10 V gate drive. Negative turn-off (e.g., −5 V) is unnecessary due to its high dv/dt immunity (20 V/ns) and low Miller capacitance (Crss = 3.6 pF), which suppress false turn-on even under noisy conditions.
Can SPP03N60S5 replace older Cool MOS™ S3 or S4 variants in existing designs?
Yes, with minor layout review. S5 offers lower RDS(on) and Qg than S3/S4, reducing both conduction and switching losses. Thermal design remains compatible due to identical PG-TO220 package and RthJC = 3.3 K/W, but gate drive timing may need adjustment for faster transitions.
SPP03N60S5HKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.2A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 1.4Ohm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 5.5V @ 135µA
- Gate Charge (Qg) (Max) @ Vgs:
- 16 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 420 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 38W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-3-1
SPP03N60S5HKSA1 FAQ
1.How can I place an order for SPP03N60S5HKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SPP03N60S5HKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SPP03N60S5HKSA1 reliable?
The price and inventory of SPP03N60S5HKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP03N60S5HKSA1 is usually 5 days.
3.What payment methods are accepted for SPP03N60S5HKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP03N60S5HKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SPP03N60S5HKSA1?
SPP03N60S5HKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SPP03N60S5HKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SPP03N60S5HKSA1?
For technical support, including SPP03N60S5HKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP03N60S5HKSA1 requirements.
6.How does Aetrix verify that SPP03N60S5HKSA1 is sourced from the original manufacturer or authorized distributors?
All SPP03N60S5HKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP03N60S5HKSA1 meets industry standards.
7.What is the process for return or replacement of SPP03N60S5HKSA1?
All SPP03N60S5HKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPP03N60S5HKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SPP03N60S5HKSA1 part is unused and in its original packaging.
Return procedure for SPP03N60S5HKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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