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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP04N50C3HKSA1

Name: SPP04N50C3HKSA1
Brand: Infineon Technologies
SKU: SPP04N50C3HKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP04N50C3HKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP04N50C3HKSA1.pdf

Description:: MOSFET N-CH 560V 4.5A TO220-3

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Product details

Overview

SPP04N50C3HKSA1 from Infineon Technologies is a 500 V, 4 A N-channel enhancement-mode power MOSFET in TO-220-3 package, featuring R_DS(on) = 1.4 Ω (typ) at V_GS = 10 V and T_j = 25 °C, ultra-low gate charge (Q_g = 12 nC), and avalanche-rated operation. It serves as a high-voltage switching element in offline SMPS primary-side switches, PFC stages, and industrial AC-DC converters.

For engineers reviewing the SPP04N50C3HKSA1 datasheet, SPP04N50C3HKSA1 pinout, SPP04N50C3HKSA1 application, or SPP04N50C3HKSA1 equivalent, key selection criteria include its 500 V V_DSS, 1.4 Ω R_DS(on), 12 nC total gate charge, 400 A/µs di/dt rating, and repetitive avalanche capability up to E_AS = 470 mJ at T_j = 25 °C.

Technical Context

This MOSFET employs Infineon's CoolMOS™ C3 technology, delivering improved transconductance (g_fs = 2.5 S min) and reduced effective output capacitance (C_oss,er = 120 pF). Its periodic avalanche rating supports robust hard-switching in flyback and resonant topologies without external snubbers.

The device features fully isolated TO-220-3 package with insulated drain tab, enabling direct heatsink mounting without isolation hardware. Thermal resistance R_thJC = 1.2 K/W ensures efficient junction-to-case heat transfer under continuous 4 A conduction.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - Withstands DC bus voltages up to 400 V with margin for surge and ringing in offline applications.
R_DS(on) max	1.8 Ω @ T_j = 125 °C - Enables low conduction loss in 4 A continuous switch-mode operation at elevated temperature.
Q_g	12 nC - Reduces gate drive power and enables faster switching with standard 1 A gate drivers.
E_AS	470 mJ @ T_j = 25 °C - Supports single-pulse avalanche energy handling without failure in overvoltage events.
dv/dt rating	4.5 V/ns - Resists false turn-on during high-slew-rate voltage transients in half-bridge configurations.
I_D cont	4 A @ T_C = 100 °C - Sustains full-load current in compact heatsinked designs with case temperature control.
C_iss	490 pF @ V_GS = 0 V, V_DS = 25 V - Low input capacitance minimizes Miller effect and improves gate control stability.

Pinout & Package

Package: TO-220-3 (full-pack, insulated drain tab, lead-free, RoHS-compliant).

Pin/Terminal	Circuit Role	Design Meaning
1 (Drain)	Main high-side current path	Electrically isolated metal tab; connects directly to heatsink without insulator required.
2 (Gate)	Control electrode	Low-impedance input requiring <12 nC charge for full enhancement; sensitive to ESD.
3 (Source)	Reference node for gate drive	Common return for load current and gate driver ground; defines local 0 V reference.

Key Features

Feature	Design Value
Ultra-low Q_g	12 nC enables 100 kHz+ switching with minimal gate driver losses and simplified layout.
Repetitive avalanche rated	Rated for repeated E_AR = 23 mJ pulses, supporting reliable operation in unclamped inductive switching.
Improved g_fs	2.5 S min provides tighter V_GS-I_D linearity and better current regulation in linear-mode applications.
Low C_oss,er	120 pF reduces stored energy in output capacitance, lowering turn-off loss and improving ZVS compatibility.
TO-220 Full-Pak insulation	Drain tab isolation eliminates need for mica washers or silicone pads in heatsink mounting.

Applications

Industrial SMPS Primary Switch

Active PFC Boost Switch

Use Scenario: 30–100 W offline flyback converter operating from 85–265 VAC input.

IC Role / Device Role / Timing Role: High-side main switch controlling energy transfer into transformer primary winding during each PWM cycle.

Use Value: 1.4 Ω R_DS(on) and 12 nC Q_g reduce both conduction and switching losses, enabling >88% efficiency at full load.

Use Scenario: Continuous-conduction-mode (CCM) boost PFC stage in LED drivers and industrial power supplies.

IC Role / Device Role / Timing Role: Fast-switching boost switch synchronizing with AC line zero-crossings to shape input current waveform.

Use Value: 400 A/µs di/dt rating and 4.5 V/ns dv/dt immunity prevent spurious turn-on during high-current transitions.

DC-DC Isolated Half-Bridge

Motor Drive High-Side Switch

Use Scenario: 200–400 V input isolated forward or LLC resonant converter for telecom rectifiers.

IC Role / Device Role / Timing Role: Low-side switch in asymmetrical half-bridge topology with synchronous rectification on secondary side.

Use Value: Repetitive avalanche rating allows safe operation during transient overloads without external clamping circuits.

Use Scenario: 24–48 V BLDC motor controller for HVAC blowers and industrial pumps.

IC Role / Device Role / Timing Role: High-side N-channel switch driven via bootstrap gate driver in three-phase inverter leg.

Use Value: Fully isolated TO-220 package simplifies thermal management and eliminates gate-drive isolation component count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK50ZFP	R_DS(on) = 1.6 Ω @ 10 V; Q_g = 14 nC; no specified repetitive avalanche rating.	Lacks documented repetitive avalanche capability; requires external clamping in unclamped inductive loads.	Preferred where cost sensitivity outweighs need for intrinsic avalanche ruggedness.
FQP4N50CTU	R_DS(on) = 1.8 Ω @ 10 V; Q_g = 16 nC; R_thJC = 1.5 K/W (higher thermal resistance).	Higher conduction loss and lower thermal efficiency limit usable current in constrained thermal environments.	Suitable for lower-frequency (<60 kHz), non-avalanche-critical applications with generous heatsinking.

Compared with STP4NK50ZFP and FQP4N50CTU, SPP04N50C3HKSA1 delivers superior avalanche ruggedness, lower gate charge, and better thermal performance-making it optimal for high-reliability, high-frequency, and thermally constrained 500 V switching designs.

Availability

SPP04N50C3HKSA1 is available at Aetrix Electronics and suitable for industrial SMPS, active PFC stages, isolated DC-DC converters, and motor drive inverters requiring stable component supply and long-term lifecycle support.

Supply support for SPP04N50C3HKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

SPP04N50C3HKSA1 belongs to the CoolMOS™ C3 family, engineered for high-efficiency, high-voltage switching in offline power supplies and industrial converters where avalanche robustness and low gate charge are critical.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The SPP04N50C3HKSA1 supports I_D = 4 A continuously at T_C = 100 °C, verified per its Safe Operating Area (SOA) curve and thermal derating profile. This rating assumes adequate heatsinking and ambient conditions that maintain case temperature ≤100 °C during steady-state operation.

Does this MOSFET require a gate resistor for EMI suppression?

A gate resistor of 10–47 Ω is recommended to dampen ringing and limit peak gate current during switching transitions. The device's low Q_g (12 nC) and fast intrinsic switching speed make external gate resistance essential for controlled dv/dt and reduced radiated emissions in EMC-sensitive designs.

Is the TO-220-3 package electrically insulated?

Yes-the TO-220-3 Full-Pak variant used in SPP04N50C3HKSA1 features an electrically insulated drain tab rated for 2500 V_AC isolation, allowing direct mounting to grounded heatsinks without additional insulating hardware or thermal interface materials.

Can this MOSFET replace older CoolMOS™ C2 devices in existing designs?

Yes-SPP04N50C3HKSA1 is a direct drop-in replacement for C2-series equivalents like SPW20N50C2, offering identical pinout, voltage rating, and improved R_DS(on), Q_g, and avalanche performance without requiring PCB or gate-drive circuit changes.

SPP04N50C3HKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 560 V

Current - Continuous Drain (Id) @ 25°C:: 4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 950mOhm @ 2.8A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 470 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP04N50C3HKSA1 FAQ

1.How can I place an order for SPP04N50C3HKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP04N50C3HKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP04N50C3HKSA1 reliable?

The price and inventory of SPP04N50C3HKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP04N50C3HKSA1 is usually 5 days.

3.What payment methods are accepted for SPP04N50C3HKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP04N50C3HKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP04N50C3HKSA1?

SPP04N50C3HKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP04N50C3HKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP04N50C3HKSA1?

For technical support, including SPP04N50C3HKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP04N50C3HKSA1 requirements.

6.How does Aetrix verify that SPP04N50C3HKSA1 is sourced from the original manufacturer or authorized distributors?

All SPP04N50C3HKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP04N50C3HKSA1 meets industry standards.

7.What is the process for return or replacement of SPP04N50C3HKSA1?

All SPP04N50C3HKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPP04N50C3HKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP04N50C3HKSA1 part is unused and in its original packaging.

Return procedure for SPP04N50C3HKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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