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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP04N50C3XKSA1

Name: SPP04N50C3XKSA1
Brand: Infineon Technologies
SKU: SPP04N50C3XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP04N50C3XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP04N50C3XKSA1.pdf

Description:: LOW POWER_LEGACY

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SPP04N50C3XKSA1 from Infineon Technologies is a 500 V, 4 A N-channel enhancement-mode power MOSFET in TO-220-3 package, featuring R_DS(on) = 1.4 Ω (max) at V_GS = 10 V and T_j = 25 °C, ultra-low gate charge (Q_g = 12 nC), and avalanche-rated operation. It serves as a high-voltage switching element in offline SMPS primary-side switches, PFC stages, and industrial AC-DC converters.

For engineers reviewing the SPP04N50C3XKSA1 datasheet, SPP04N50C3XKSA1 pinout, SPP04N50C3XKSA1 application, or SPP04N50C3XKSA1 equivalent, key selection criteria include its 500 V V_DSS, 4 A I_D rating at 100 °C case temperature, 1.4 Ω R_DS(on), 12 nC total gate charge, and repetitive avalanche capability (E_AS = 175 mJ).

Technical Context

This MOSFET employs Infineon's CoolMOS™ C3 technology, delivering improved transconductance (g_fs = 2.5 S min) and reduced effective output capacitance (C_oss,er = 180 pF) for faster switching and lower switching losses in hard-switched topologies.

It supports periodic avalanche-rated operation with E_AS = 175 mJ (T_j = 25 °C) and dV/dt ruggedness up to 4.5 V/ns, enabling robust performance in flyback and resonant converters where voltage overshoot and transient stress occur.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	500 V - Withstands DC bus voltages up to 400 V with margin for surge and ringing in offline applications.
I_D (T_C = 100 °C)	4 A - Continuous drain current rating suitable for 30–50 W SMPS primary-side switching.
R_DS(on) (V_GS = 10 V)	1.4 Ω (max) - Enables low conduction loss at moderate current levels without forced cooling.
Q_g	12 nC - Reduces gate drive power and enables efficient operation with standard 1–2 A gate drivers.
E_AS	175 mJ - Supports single-pulse avalanche energy handling without failure under inductive turn-off stress.
C_iss	520 pF - Low input capacitance minimizes Miller effect and improves switching controllability.
dV/dt immunity	4.5 V/ns - Ensures reliable operation during fast voltage transients without spurious turn-on.

Pinout & Package

Supplied in fully isolated TO-220-3 package (3-pin, vertical mounting, epoxy-coated). Drain connected to tab for thermal and electrical integration with heatsink.

Pin/Terminal	Circuit Role	Design Meaning
1 (Drain)	High-voltage power terminal	Connected to drain metallization and electrically tied to metal tab; requires isolation from heatsink unless floating design.
2 (Gate)	Control input	Low-impedance MOS gate requiring <12 nC charge; sensitive to ESD and layout-induced ringing.
3 (Source)	Reference node / return path	Common reference for gate drive and current sensing; forms ground-referenced control loop in low-side configurations.

Key Features

Feature	Design Value
Ultra-low gate charge	Q_g = 12 nC enables fast, low-loss switching with minimal driver complexity.
Avalanche-rated operation	Repetitive and single-pulse avalanche capability (E_AS = 175 mJ) eliminates need for external snubbers in many flyback designs.
Improved transconductance	g_fs ≥ 2.5 S enhances gain stability and reduces gate voltage sensitivity across temperature.
Low effective output capacitance	C_oss,er = 180 pF lowers stored energy and improves ZVS compatibility in resonant topologies.

Applications

AC-DC Adapter Primary Switch

Industrial PFC Boost Stage

Use Scenario: 36 W universal-input offline adapter with discontinuous conduction mode (DCM) flyback topology.

IC Role / Device Role / Timing Role: High-side main switch controlling energy transfer from primary winding; operates at 65–130 kHz with zero-voltage switching transitions.

Use Value: 1.4 Ω R_DS(on) and 12 nC Q_g reduce both conduction and switching losses, achieving >85% efficiency at full load.

Use Scenario: 200 W active boost PFC stage in industrial power supply with 50 Hz–60 Hz line input.

IC Role / Device Role / Timing Role: Fast-switching boost switch synchronized to line frequency; handles 400 V DC link and 4 A peak inductor current.

Use Value: 4.5 V/ns dV/dt immunity prevents false triggering during high dv/dt commutation events near zero-crossings.

LED Driver Flyback Controller

Motor Drive Half-Bridge Low-Side

Use Scenario: Constant-current LED driver for street lighting with 300 V DC bus and 350 mA output.

IC Role / Device Role / Timing Role: Primary-side MOSFET in quasi-resonant flyback; switched at variable frequency between 40–120 kHz.

Use Value: C_oss,er = 180 pF ensures predictable valley switching timing and stable light output regulation.

Use Scenario: 24 V BLDC motor controller with 10 A phase current and 20 kHz PWM.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge leg; commutates inductive load with controlled di/dt ≤ 400 A/µs.

Use Value: Body diode t_rr = 50 ns and Q_rr = 25 nC minimize reverse recovery loss and EMI generation during freewheeling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK50ZFP	500 V, 4 A, R_DS(on) = 1.6 Ω, Q_g = 14 nC, no specified E_AS rating	Lacks documented avalanche energy rating; requires external clamping in inductive switching	Prefer when cost sensitivity outweighs need for intrinsic avalanche robustness
FQP4N50	500 V, 4 A, R_DS(on) = 1.8 Ω, Q_g = 19 nC, E_AS = 120 mJ	Higher R_DS(on) and gate charge increase conduction and switching losses at same operating point	Acceptable for lower-frequency (<65 kHz), non-avalanche-critical designs with relaxed thermal budget

Compared with STP4NK50ZFP and FQP4N50, SPP04N50C3XKSA1 delivers superior switching efficiency via lower Q_g and C_oss,er, plus verified 175 mJ avalanche energy-critical for unclamped inductive turn-off in compact, high-reliability power supplies.

Availability

SPP04N50C3XKSA1 is available at Aetrix Electronics and suitable for AC-DC adapters, industrial PFC modules, LED drivers, and motor control inverters requiring stable component supply and long-term manufacturing continuity.

Supply support for SPP04N50C3XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

SPP04N50C3XKSA1 belongs to the CoolMOS™ C3 family, engineered for high-efficiency, high-voltage switching in offline SMPS, PFC, and lighting applications where low gate charge and avalanche ruggedness are essential.

FAQ

Is SPP04N50C3XKSA1 suitable for use in a 400 V DC link PFC boost converter?

Yes. Its 500 V V_DSS, 4 A I_D rating at 100 °C case temperature, and 1.4 Ω R_DS(on) support continuous operation in 400 V PFC stages. The device's 4.5 V/ns dV/dt immunity and low C_oss,er further ensure stable switching under high-line transients and boost diode reverse recovery stress.

Does SPP04N50C3XKSA1 require a gate resistor for safe operation?

Yes. A gate resistor of 10–22 Ω is recommended to dampen ringing, limit peak gate current, and control switching speed. This balances EMI reduction against switching loss-especially critical given its 12 nC Q_g and fast intrinsic dv/dt capability.

What is the maximum allowable junction temperature during repetitive avalanche operation?

T_j,max remains 150 °C during repetitive avalanche, but E_AR is thermally limited: at T_j = 125 °C, E_AR drops to 80 mJ. Derating curves in the datasheet must be applied to ensure junction temperature stays within limits during sustained avalanche duty cycles.

Can the body diode of SPP04N50C3XKSA1 be used for synchronous rectification?

No. Its body diode has t_rr = 50 ns and Q_rr = 25 nC-suitable for freewheeling but not optimized for synchronous rectification. Dedicated low-Q_rr, low-V_F Schottky or GaN-based synchronous rectifiers are preferred for that function.

SPP04N50C3XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 560 V

Current - Continuous Drain (Id) @ 25°C:: 4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 950mOhm @ 2.8A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 470 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP04N50C3XKSA1 FAQ

1.How can I place an order for SPP04N50C3XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP04N50C3XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP04N50C3XKSA1 reliable?

The price and inventory of SPP04N50C3XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP04N50C3XKSA1 is usually 5 days.

3.What payment methods are accepted for SPP04N50C3XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP04N50C3XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP04N50C3XKSA1?

SPP04N50C3XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP04N50C3XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP04N50C3XKSA1?

For technical support, including SPP04N50C3XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP04N50C3XKSA1 requirements.

6.How does Aetrix verify that SPP04N50C3XKSA1 is sourced from the original manufacturer or authorized distributors?

All SPP04N50C3XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP04N50C3XKSA1 meets industry standards.

7.What is the process for return or replacement of SPP04N50C3XKSA1?

All SPP04N50C3XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPP04N50C3XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP04N50C3XKSA1 part is unused and in its original packaging.

Return procedure for SPP04N50C3XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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