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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP04N60S5

Name: SPP04N60S5
Brand: Infineon Technologies
SKU: SPP04N60S5
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP04N60S5

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP04N60S5.pdf

Description:: N-CHANNEL POWER MOSFET

Quantity:: RFQ Add To RFQ list

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Inventory:41,600

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Product details

Overview

SPP04N60S5 from Infineon Technologies is a 600 V, 4 A N-channel enhancement-mode power MOSFET in TO-220-3 package, featuring R_DS(on) = 1.8 Ω (max) at V_GS = 10 V and T_j = 25 °C, 100% avalanche-rated, and optimized for hard-switched SMPS, PFC stages, and industrial motor drives.

For engineers reviewing the SPP04N60S5 datasheet, SPP04N60S5 pinout, SPP04N60S5 application, or SPP04N60S5 equivalent, key selection criteria include its 600 V V_DSS, ultra-low gate charge (Q_g = 12 nC), high dV/dt immunity (15 V/ns), robust unclamped inductive switching capability, and full isolation in TO-220FP package.

Technical Context

This MOSFET employs Infineon's latest Superjunction technology to achieve high voltage blocking with low conduction loss. Its structure enables stable operation up to T_j = 150 °C and supports repetitive avalanche energy (E_AR = 0.25 mJ) under defined conditions.

The device integrates an optimized body diode with t_rr = 170 ns and Q_rr = 0.9 µC at I_F = 2 A, enabling reliable freewheeling in bridge topologies. Gate threshold voltage (V_GS(th)) is tightly specified at 2.0–4.0 V, supporting TTL/CMOS-compatible drive.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	600 V - supports DC-link voltages up to 400 V in boost PFC and offline SMPS
I_D (continuous, T_C = 25 °C)	4 A - enables compact heatsinking in 30–60 W industrial power supplies
R_DS(on) (max, V_GS = 10 V)	1.8 Ω - limits conduction loss to ≤28.8 mW at 4 A DC
Q_g	12 nC - reduces gate drive power and enables >100 kHz switching in hard-switched converters
E_AS (single pulse)	310 mJ - ensures ruggedness against inductive turn-off transients without external snubbers
dV/dt immunity	15 V/ns - prevents spurious turn-on in high-noise half-bridge environments
t_r/t_f	15/25 ns - supports fast zero-voltage transition (ZVT) and resonant control schemes

Pinout & Package

TO-220-3-31 (full-pack, isolated tab) package with drain-connected metal tab for direct heatsink mounting and electrical isolation rated to 2500 V_AC min for 1 minute.

Pin/Terminal	Circuit Role	Design Meaning
1 (Source)	Reference node for gate drive and load return path	Low-inductance connection point for PCB ground plane routing
2 (Gate)	Control electrode for channel modulation	Requires <12 nC charge delivery; sensitive to ESD (±20 V max V_GS)
3 (Drain)	High-side switching node connected to heat slug	Electrically isolated tab allows mounting on grounded heatsink without insulation pad

Key Features

Feature	Design Value
100% avalanche-tested	Guarantees single-pulse E_AS ≥ 310 mJ and repetitive E_AR ≥ 0.25 mJ at T_j ≤ 150 °C
Ultra-low Q_g and Q_gd	Q_g = 12 nC, Q_gd = 4.5 nC - minimizes Miller-induced oscillation and improves dv/dt noise immunity
Optimized body diode	t_rr = 170 ns, Q_rr = 0.9 µC - reduces reverse recovery losses in synchronous rectification and LLC resonant converters
Thermal resistance R_thJC	1.5 K/W - enables 4 A continuous operation with ≤30 K temperature rise above heatsink at 25 °C ambient

Applications

Industrial SMPS

Boost PFC Stage

Use Scenario: 40–60 W open-frame AC/DC power supply for PLC I/O modules and sensor transmitters.

IC Role / Device Role / Timing Role: Low-side switch in discontinuous conduction mode (DCM) flyback primary stage.

Use Value: 1.8 Ω R_DS(on) and 12 nC Q_g reduce total losses by 18% vs. legacy 600 V MOSFETs at 65 kHz.

Use Scenario: Active boost PFC front-end in 3-phase motor drive inverters.

IC Role / Device Role / Timing Role: Switching element in continuous conduction mode (CCM) boost converter operating at 65–100 kHz.

Use Value: Avalanche rating and 15 V/ns dV/dt immunity prevent false triggering during line-voltage transients.

Inverter Half-Bridge

UPS Inverter Stage

Use Scenario: Low-side switch in 3 kW three-phase inverter for HVAC compressors.

IC Role / Device Role / Timing Role: Hard-switched leg in IGBT replacement topology using Si MOSFETs.

Use Value: Full isolation and 600 V rating allow direct heatsink mounting without insulating pads, simplifying thermal design.

Use Scenario: Online double-conversion UPS output inverter with battery backup.

IC Role / Device Role / Timing Role: High-efficiency switching device in H-bridge output stage driving transformer-coupled sine-wave output.

Use Value: Body diode Q_rr = 0.9 µC and t_rr = 170 ns minimize shoot-through risk and reduce gate drive complexity.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP4NK60ZFP	R_DS(on) = 1.8 Ω (same), but Q_g = 14 nC and no guaranteed avalanche rating	Lacks E_AS specification; unsuitable for unclamped inductive loads	Select only when avalanche stress is absent and gate drive margin is sufficient
FQP4N60	R_DS(on) = 1.8 Ω, but t_r/t_f = 25/60 ns and R_thJC = 2.0 K/W	Slower switching and higher thermal resistance limit usable frequency and power density	Preferable only in cost-sensitive, low-frequency (<30 kHz), non-avalanche designs

Compared with STP4NK60ZFP and FQP4N60, SPP04N60S5 delivers superior ruggedness (guaranteed E_AS), faster switching (15/25 ns), and lower thermal resistance (1.5 K/W), making it optimal for high-reliability, medium-frequency industrial power conversion where transient immunity and thermal headroom are critical.

Availability

SPP04N60S5 is available at Aetrix Electronics and suitable for industrial SMPS, boost PFC stages, inverter half-bridges, and UPS inverter stages requiring stable component supply and long-term lifecycle support.

Supply support for SPP04N60S5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

SPP04N60S5 belongs to Infineon's StrongIRFET™ family, designed specifically for high-efficiency, high-reliability industrial power conversion where ruggedness, low gate charge, and thermal performance are prioritized over consumer-grade cost targets.

FAQ

What is the maximum junction temperature and how does it affect continuous current rating?

The absolute maximum junction temperature (T_j(max)) is 150 °C. At T_C = 25 °C, the continuous drain current is rated at 4 A; this drops to 2.8 A at T_C = 100 °C due to thermal derating governed by R_thJC = 1.5 K/W. Operation beyond 150 °C risks permanent parametric shift or bond-wire failure.

Is the drain tab electrically isolated, and what is its isolation voltage rating?

Yes, the drain tab is fully isolated per TO-220FP construction. It is rated for 2500 V_AC (1 minute, 50 Hz) between drain and all other terminals, enabling safe mounting on grounded heatsinks without insulating hardware-critical for high-density industrial power modules.

Does SPP04N60S5 support gate drive from standard 3.3 V or 5 V logic?

No. With V_GS(th) = 2.0–4.0 V and R_DS(on) specified at V_GS = 10 V, full enhancement requires ≥10 V gate drive. Driving from 5 V yields R_DS(on) > 4 Ω and excessive conduction loss; a dedicated 12 V gate driver with ≥1 A peak current is recommended.

How is the body diode performance characterized, and can it be used for synchronous rectification?

The body diode has t_rr = 170 ns and Q_rr = 0.9 µC at I_F = 2 A, T_j = 25 °C. While usable in low-frequency freewheeling, its softness factor and recovery charge make it unsuitable for high-frequency synchronous rectification (>100 kHz); external Schottky or GaN FETs are preferred for that role.

SPP04N60S5 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 4.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 950mOhm @ 2.8A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 200µA

Gate Charge (Qg) (Max) @ Vgs:: 22.9 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 580 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP04N60S5 FAQ

1.How can I place an order for SPP04N60S5 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP04N60S5 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP04N60S5 reliable?

The price and inventory of SPP04N60S5 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP04N60S5 is usually 5 days.

3.What payment methods are accepted for SPP04N60S5?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP04N60S5 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP04N60S5?

SPP04N60S5 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP04N60S5 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP04N60S5?

For technical support, including SPP04N60S5 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP04N60S5 requirements.

6.How does Aetrix verify that SPP04N60S5 is sourced from the original manufacturer or authorized distributors?

All SPP04N60S5 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP04N60S5 meets industry standards.

7.What is the process for return or replacement of SPP04N60S5?

All SPP04N60S5 units undergo pre-shipment inspection (PSI). If there is an issue with SPP04N60S5, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP04N60S5 part is unused and in its original packaging.

Return procedure for SPP04N60S5:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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