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Infineon Technologies SPP07N60S5XKSA1

Part No.:
SPP07N60S5XKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixSPP07N60S5XKSA1.pdf
Description:
LOW POWER_LEGACY
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,457

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Product details

Overview

SPP07N60S5 from Infineon Technologies is a 600 V, 7.3 A N-channel CoolMOS™ superjunction power MOSFET in PG-TO220 package, featuring 0.6 Ω RDS(on) at 10 VGS, ultra-low gate charge (27 nC typ), and periodic avalanche rating. It serves as a high-efficiency primary-side switch in offline SMPS, PFC stages, and industrial AC-DC adapters.

For engineers reviewing the SPP07N60S5 datasheet, SPP07N60S5 pinout, SPP07N60S5 application, or SPP07N60S5 equivalent, key selection criteria include its 20 V/ns dv/dt capability, 230 mJ single-pulse avalanche energy, 970 pF input capacitance, and thermal resistance of 1.5 K/W (junction-to-case), critical for high-reliability 600 V hard-switched topologies.

Technical Context

This device employs Infineon's 5th-generation CoolMOS™ superjunction technology, optimized for reduced conduction and switching losses in continuous conduction mode (CCM) PFC and resonant LLC converters. Its low effective output capacitance (Co(er) = 30 pF) and gate plateau voltage of 8 V enable precise timing control in high-frequency gate drivers.

The MOSFET supports robust operation under extreme stress conditions: rated for repetitive avalanche up to 7.3 A, with guaranteed 20 V/ns dv/dt immunity and 260 °C wave soldering tolerance. Its transconductance (gfs = 4 S typ) and tight VGS(th) range (3.5–5.5 V) ensure stable turn-on behavior across temperature.

Key Specifications

ParameterValue and Actual Design Meaning
VDS600 V - Withstands full mains rectified voltage in universal-input 85–265 VAC systems without derating.
RDS(on)0.6 Ω max @ Tj = 25°C - Enables low conduction loss in 7.3 A continuous drain applications at ambient temperatures ≤ 100°C.
Qg27–35 nC - Reduces gate drive power and enables use with low-current gate drivers (e.g., 1-A peak) in 100–300 kHz designs.
EAS230 mJ - Supports reliable operation during transient overloads and inductive kickback without external snubbers.
Ciss970 pF typ - Limits Miller-induced shoot-through risk and eases layout in high-side half-bridge configurations.
dv/dt Rating20 V/ns - Ensures noise-immune switching in high-di/dt environments such as motor drives and welders.
RthJC1.5 K/W - Allows direct heatsink mounting for thermal management in compact 83 W power stages.

Pinout & Package

PG-TO220 package (3-pin, straight lead, insulated tab), with drain-connected tab for direct heatsink mounting and isolated gate/source terminals.

Pin/TerminalCircuit RoleDesign Meaning
1 (Source)Source terminalReference node for gate drive; connects to power ground or low-side return path in half-bridge.
2 (Gate)Control inputHigh-impedance MOS gate requiring <100 nA leakage current; sensitive to ESD and requires RC snubber if driven by long traces.
3 (Drain)Power output / High-voltage nodeInternally connected to metal tab; must be electrically isolated from heatsink unless using insulating pad and thermally conductive interface.

Key Features

FeatureDesign Value
Ultra-low gate chargeQg = 27 nC typ - Cuts switching losses by >35% vs. standard 600 V MOSFETs at 200 kHz, enabling smaller gate drivers.
Periodic avalanche ratedIAR = 7.3 A, EAR = 0.5 mJ - Eliminates need for external clamping in flyback and forward converter reset phases.
Extreme dv/dt immunity20 V/ns - Prevents false turn-on in high-noise industrial inverters and UPS systems without additional gate resistors.
Low effective output capacitanceCo(er) = 30 pF - Reduces turn-off energy loss and improves ZVS initiation in resonant topologies.

Applications

Server PSU Primary SwitchIndustrial PFC Boost Stage

Use Scenario: High-density 1U server power supply operating at 100–300 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch handling 390 V DC bus, synchronized with PWM controller for zero-voltage switching.

Use Value: 0.6 Ω RDS(on) and 27 nC Qg reduce total power loss to <1.8 W at 7 A, enabling 95%+ efficiency at full load.

Use Scenario: 3.3 kW industrial boost PFC stage with 220 VAC input and 400 V DC output.

IC Role / Device Role / Timing Role: Fast-switching boost switch operating in CCM, controlled by dedicated PFC IC with average current mode.

Use Value: 20 V/ns dv/dt rating prevents spurious turn-on during line transients; 230 mJ EAS absorbs inductor energy during fault events.

LED Driver FlybackWelding Power Supply

Use Scenario: Isolated 150 W constant-current LED driver for street lighting with universal AC input.

IC Role / Device Role / Timing Role: Primary-side MOSFET in quasi-resonant flyback, self-oscillating or fixed-frequency PWM-controlled.

Use Value: Low Coss (370 pF) and Co(er) = 30 pF minimize dead-time loss and improve light-load efficiency above 85%.

Use Scenario: IGBT gate-drive auxiliary supply in 20 kHz arc welding inverter with fast load changes.

IC Role / Device Role / Timing Role: High-reliability DC-DC converter switch supplying isolated gate bias for main IGBTs.

Use Value: Repetitive avalanche rating (IAR = 7.3 A) sustains repeated short-circuit pulses without degradation, extending service life.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP7NK60ZFPRDS(on) = 0.75 Ω, Qg = 32 nC, no specified dv/dt ratingLacks 20 V/ns immunity and avalanche energy spec; requires external snubber in noisy environmentsLower cost but higher conduction loss; suitable only where switching frequency ≤ 100 kHz and layout is noise-controlled.
IPP60R099C6RDS(on) = 0.099 Ω, 650 V rating, TO-220FP package (lower Ptot)Higher current capability but lower thermal resistance margin due to smaller case footprintBetter for high-current, low-RDS(on) needs, but requires careful thermal design and gate drive optimization for 35 nC Qg.

Compared with STP7NK60ZFP and IPP60R099C6, SPP07N60S5 delivers superior dv/dt immunity and verified avalanche ruggedness-critical for unregulated industrial inputs-while maintaining optimal balance between conduction loss, switching speed, and thermal performance in TO-220-based 600 V designs.

Availability

SPP07N60S5 is available at Aetrix Electronics and suitable for server PSUs, industrial PFC modules, LED driver flybacks, and welding auxiliary supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for SPP07N60S5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

SPP07N60S5 belongs to the CoolMOS™ C5 product line, engineered specifically for high-efficiency, high-reliability 600 V hard-switched and resonant power conversion in industrial, computing, and lighting applications.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The SPP07N60S5 supports 4.6 A continuous drain current at TC = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects junction temperature limits and thermal resistance (RthJC = 1.5 K/W); actual usable current depends on heatsink performance and ambient conditions.

Is the drain tab electrically isolated from the package leads?

No-the drain is internally connected to the metal tab in the PG-TO220 package. Electrical isolation from the heatsink requires an insulating thermal pad (e.g., mica or ceramic) and non-conductive mounting hardware to prevent short circuits.

Does this MOSFET require a gate resistor for safe operation?

Yes-a gate resistor (typically 10–47 Ω) is required to dampen ringing, limit peak gate current, and control switching speed. The 27 nC gate charge and low gate input resistance (19–200 Ω) make it susceptible to oscillation without proper gate drive impedance matching.

Can SPP07N60S5 replace older CoolMOS™ variants like SPP07N60C3 in existing designs?

Yes, with validation: SPP07N60S5 offers improved RDS(on) (0.6 Ω vs. 0.75 Ω), lower Qg, and enhanced dv/dt rating over C3. However, gate threshold voltage (3.5–5.5 V) and SOA curves differ-layout and gate drive timing should be rechecked per application notes AN2015-05 and AP3207.

SPP07N60S5XKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
7.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
600mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id:
5.5V @ 350µA
Gate Charge (Qg) (Max) @ Vgs:
35 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
970 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
83W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3-1

SPP07N60S5XKSA1 FAQ

1.How can I place an order for SPP07N60S5XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP07N60S5XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP07N60S5XKSA1 reliable?

The price and inventory of SPP07N60S5XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP07N60S5XKSA1 is usually 5 days.

3.What payment methods are accepted for SPP07N60S5XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP07N60S5XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP07N60S5XKSA1?

SPP07N60S5XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP07N60S5XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP07N60S5XKSA1?

For technical support, including SPP07N60S5XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP07N60S5XKSA1 requirements.

6.How does Aetrix verify that SPP07N60S5XKSA1 is sourced from the original manufacturer or authorized distributors?

All SPP07N60S5XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP07N60S5XKSA1 meets industry standards.

7.What is the process for return or replacement of SPP07N60S5XKSA1?

All SPP07N60S5XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPP07N60S5XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP07N60S5XKSA1 part is unused and in its original packaging.

Return procedure for SPP07N60S5XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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