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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP08P06PBKSA1

Name: SPP08P06PBKSA1
Brand: Infineon Technologies
SKU: SPP08P06PBKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP08P06PBKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP08P06PBKSA1.pdf

Description:: MOSFET P-CH 60V 8.8A TO220-3

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Product details

Overview

SPP08P06PBKSA1 from Infineon Technologies is a P-channel enhancement-mode SIPMOS™ power MOSFET in P-TO220-3-1 package, rated for -60 V V_DS, 0.3 Ω R_DS(on) at V_GS = -10 V and I_D = -6.2 A, with 175 °C maximum junction temperature and avalanche-rated operation. It serves as a high-reliability low-side switch in DC-DC converters and motor control circuits requiring robust unclamped inductive switching capability.

For engineers reviewing the SPP08P06PBKSA1 datasheet, SPP08P06PBKSA1 pinout, SPP08P06PBKSA1 application, or SPP08P06PBKSA1 equivalent, key selection criteria include its -8.8 A continuous drain current at T_C = 25 °C, 70 mJ single-pulse avalanche energy (I_D = -8.8 A, V_DD = -25 V), dv/dt ruggedness up to 6 kV/µs, and thermal resistance R_thJC of 3.6 K/W - all critical for industrial power stage design and failure-mode resilience validation.

Technical Context

This device operates as a normally-off P-channel MOSFET with gate threshold voltage V_GS(th) ranging from -2.1 V to -4.0 V at T_j = 25 °C, enabling direct logic-level drive from -5 V or -10 V controllers. Its transconductance g_fs is 1.5–3.6 S, supporting fast switching in hard-switched topologies.

Designed for unclamped inductive load switching, it features integrated avalanche-rated silicon with E_AS = 70 mJ (single pulse) and reverse diode recovery parameters: t_rr = 60–90 ns and Q_rr = 100–150 nC at I_F = -8.8 A, making it suitable for freewheeling paths where body diode conduction occurs during dead-time intervals.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	-60 V - Maximum blocking voltage before avalanche onset; defines usable bus voltage headroom in negative-rail applications.
R_DS(on)	0.23–0.3 Ω @ V_GS = -10 V, I_D = -6.2 A - Directly determines on-state conduction loss and thermal rise under load.
I_D (cont.)	-8.8 A @ T_C = 25 °C - Continuous current rating at case temperature; derates to -6.2 A at T_C = 100 °C per thermal limits.
E_AS	70 mJ - Single-pulse avalanche energy capability; enables reliable operation without external snubbers in inductive switching.
t_r/t_f	46–72 ns / 14–21 ns @ V_DD = -30 V, R_G = 6 Ω - Defines minimum achievable switching transition time and associated switching loss.
Q_g	10 nC @ V_GS = 0 to -10 V - Total gate charge required to fully turn on; determines driver strength requirement and gate drive loss.
R_thJC	3.6 K/W - Junction-to-case thermal resistance; enables accurate heatsink sizing when mounted to heatsink via case tab.

Pinout & Package

Package: P-TO220-3-1 - Through-hole plastic package with isolated tab (drain-connected), standard mounting hole, and 3.6 K/W thermal resistance to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate (G)	Control terminal; requires -10 V to fully enhance; threshold range -2.1 V to -4.0 V ensures noise immunity in noisy environments.
Pins 2 & 4	Drain (D)	High-side or low-side power node connection; electrically tied to metal tab; must be insulated from heatsink unless referenced to same potential.
Pin 3	Source (S)	Reference node for gate drive and current sensing; connects to load return or ground in low-side configuration.

Key Features

Feature	Design Value
Avalanche rated	70 mJ single-pulse energy withstand; eliminates need for external clamping in relay drivers and solenoid controls.
dv/dt ruggedness	6 kV/µs - Resists false turn-on during high-slew-rate transients, critical in half-bridge bootstrap gate drive contexts.
175 °C operation	Maximum junction temperature rating - supports compact thermal design in sealed enclosures or high ambient environments.
Low R_DS(on)	0.23 Ω typ. - Reduces conduction loss by >25% vs. comparable -60 V P-channel MOSFETs, improving efficiency in battery-powered systems.
Integrated body diode	V_SD = -1.17 to -1.55 V @ I_F = -8.8 A - Enables synchronous rectification replacement in low-frequency flyback or buck converters.

Applications

Industrial Motor Control

DC-DC Converter High-Side Switch

Use Scenario: Driving 24 V brushed DC motors in programmable logic controller (PLC) output modules with inductive kickback suppression.

IC Role / Device Role / Timing Role: Low-side switching element handling bidirectional current flow and absorbing inductive energy during PWM off-time.

Use Value: 70 mJ avalanche rating prevents failure during rapid deceleration events; 175 °C rating allows operation in cabinet-mounted enclosures without forced air.

Use Scenario: Negative-rail high-side switch in isolated dual-output DC-DC converters for industrial sensors and analog front-ends.

IC Role / Device Role / Timing Role: Controlled turn-on/turn-off of negative supply rail with precise timing governed by gate drive slew rate and Q_g.

Use Value: 6 kV/µs dv/dt rating avoids spurious turn-on during cross-conduction in complementary switching; R_DS(on) < 0.3 Ω minimizes voltage drop across rail.

Automotive Body Electronics

Power Supply Sequencing

Use Scenario: Load dump protection and reverse polarity protection in 12 V automotive body control modules (BCM).

IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode or reverse-voltage blocker in input protection stage.

Use Value: -60 V V_DS withstands ISO 7637-2 pulse 5a (load dump up to +65 V); V_GS(th) stability over -40 to +125 °C ensures consistent turn-off behavior.

Use Scenario: Controlled power-up sequencing of multiple voltage rails in FPGA-based industrial controllers.

IC Role / Device Role / Timing Role: Delayed enable switch activated after primary rail stabilization, using RC-controlled gate bias.

Use Value: Gate plateau voltage of -3.85 V enables predictable Miller region crossing; low Q_gd (4–6 nC) reduces sensitivity to layout-induced oscillation during transition.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF9540NPbF	R_DS(on) = 0.2 Ω (typ), but only rated to 150 °C T_j; no specified avalanche energy or dv/dt rating.	Lacks documented avalanche ruggedness and dv/dt immunity - unsuitable for unclamped inductive loads or noisy gate drive environments.	Prefer only in non-avalanche-critical linear or resistive load applications with conservative thermal margin.
STP8P6F6	R_DS(on) = 0.25 Ω (max), T_j = 175 °C, but E_AS = 42 mJ (lower) and no published dv/dt spec.	Lower avalanche energy limits safe operating area in high-energy inductive switching; less robust against voltage transients.	Acceptable where peak inductive energy is below 40 mJ and board-level filtering mitigates dv/dt stress.

Compared with IRF9540NPbF and STP8P6F6, SPP08P06PBKSA1 delivers superior system-level reliability through guaranteed 70 mJ avalanche energy, 6 kV/µs dv/dt immunity, and full 175 °C operation - enabling smaller heatsinks, fewer protection components, and extended field lifetime in harsh industrial environments.

Availability

SPP08P06PBKSA1 is available at Aetrix Electronics and suitable for industrial motor control, automotive body electronics, and DC-DC converter power stages requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for SPP08P06PBKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the SIPMOS™ family of trench-gate P-channel MOSFETs, engineered for high ruggedness, low on-resistance, and reliable operation in demanding power switching applications including motor drives and power supplies.

FAQ

What is the maximum gate-source voltage rating for SPP08P06PBKSA1?

The absolute maximum gate-source voltage is ±20 V. Operation beyond ±15 V risks permanent gate oxide damage. Recommended drive is -10 V for full enhancement and -5 V for partial turn-on in linear mode applications. Gate drive circuitry must include clamping diodes or Zener limiting to prevent overshoot during fast switching transitions.

Does SPP08P06PBKSA1 require a heatsink in typical operation?

Yes - at I_D = -8.8 A and R_DS(on) = 0.3 Ω, conduction loss reaches ~23 W, exceeding the 42 W P_tot rating only if case temperature exceeds ~25 °C. A heatsink maintaining T_C ≤ 70 °C is required for continuous operation above 3 A; thermal interface material and mounting torque must follow Infineon's P-TO220 mounting guidelines.

Can SPP08P06PBKSA1 replace N-channel MOSFETs in high-side configurations?

No - it is a P-channel device intended for high-side or low-side switching in negative-rail systems. Replacing an N-channel high-side switch would require inverting the gate drive logic and reconfiguring the power topology. Its -60 V rating and avalanche capability make it suitable for high-side use in negative supplies, not positive-rail high-side applications without level-shifting.

Is the body diode suitable for continuous freewheeling conduction?

Yes - the integrated body diode supports -8.8 A continuous forward current at T_C = 25 °C and has V_SD = -1.17 to -1.55 V. However, its reverse recovery charge Q_rr = 100–150 nC and t_rr = 60–90 ns limit use to frequencies below ~100 kHz in hard-switched applications; synchronous rectification with external Schottky is preferred above that.

SPP08P06PBKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 8.8A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 300mOhm @ 6.2A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 15 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 420 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 42W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3

SPP08P06PBKSA1 FAQ

1.How can I place an order for SPP08P06PBKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP08P06PBKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP08P06PBKSA1 reliable?

The price and inventory of SPP08P06PBKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP08P06PBKSA1 is usually 5 days.

3.What payment methods are accepted for SPP08P06PBKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP08P06PBKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP08P06PBKSA1?

SPP08P06PBKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP08P06PBKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP08P06PBKSA1?

For technical support, including SPP08P06PBKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP08P06PBKSA1 requirements.

6.How does Aetrix verify that SPP08P06PBKSA1 is sourced from the original manufacturer or authorized distributors?

All SPP08P06PBKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP08P06PBKSA1 meets industry standards.

7.What is the process for return or replacement of SPP08P06PBKSA1?

All SPP08P06PBKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPP08P06PBKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP08P06PBKSA1 part is unused and in its original packaging.

Return procedure for SPP08P06PBKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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