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Infineon Technologies SPP08P06PHXKSA1

Part No.:
SPP08P06PHXKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixSPP08P06PHXKSA1.pdf
Description:
MOSFET P-CH 60V 8.8A TO220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,682

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Product details

Overview

SPP08P06PHXKSA1 from Infineon Technologies is a P-channel enhancement-mode SIPMOS™ power MOSFET in PG-TO220-3 package, rated for -60 V VDS, 0.3 Ω RDS(on) at VGS = -10 V and ID = -6.2 A, avalanche-rated, dv/dt-rated, and qualified to AEC-Q101 for automotive under-hood switching applications such as DC motor control and load switching.

For engineers reviewing the SPP08P06PHXKSA1 datasheet, SPP08P06PHXKSA1 pinout, SPP08P06PHXKSA1 application, or SPP08P06PHXKSA1 equivalent, key selection criteria include its -60 V blocking capability, low gate charge (Qg = 10 nC), robust avalanche energy (EAS = 70 mJ), and thermal performance up to 175 °C junction temperature.

Technical Context

This device operates as a high-reliability, unidirectional P-channel power switch with integrated body diode optimized for hard-switched DC loads. Its gate threshold voltage (VGS(th) = -2.1 to -4.0 V) ensures stable turn-on under automotive battery voltage variations, while its 3.6 K/W junction-to-case thermal resistance supports conduction losses up to 42 W at TC = 25 °C.

The MOSFET features low output capacitance (Coss = 105–135 pF) and fast switching dynamics (td(on) = 16–24 ns, tf = 14–21 ns), enabling efficient operation in 20–100 kHz PWM-driven systems. Its avalanche rating and dv/dt immunity (6 kV/µs) allow safe operation in inductive load commutation without external snubbers.

Key Specifications

ParameterValue and Actual Design Meaning
VDS-60 V - Maximum drain-source blocking voltage for 12 V/24 V automotive systems with load dump margin
RDS(on)0.23–0.3 Ω @ VGS = -10 V - Enables <1.9 W conduction loss at -6.2 A continuous current
ID (cont)-8.8 A @ TC = 25 °C - Supports high-current solenoid and motor drive loads with minimal heatsinking
EAS70 mJ - Withstands single-pulse inductive energy without failure in relay or actuator switching
Qg10 nC - Reduces gate driver power demand and enables use of low-power microcontroller GPIOs
Tj(max)+175 °C - Certified for under-hood environments per AEC-Q101, eliminating derating concerns at 150 °C ambient
Ciss335–420 pF - Predictable input capacitance simplifies gate drive loop stability analysis

Pinout & Package

Package: PG-TO220-3 (standard through-hole TO-220 variant with isolated tab, lead-free, RoHS-compliant).

Pin/TerminalCircuit RoleDesign Meaning
Pin 1Gate (G)Control terminal; accepts negative VGS to turn on; requires -10 V for full RDS(on) specification
Pins 2 & 4Drain (D)High-side switched node; electrically connected to metal tab; must be isolated from heatsink unless referenced to system ground
Pin 3Source (S)Power return path; connects to load side of switched circuit; defines reference for gate drive

Key Features

FeatureDesign Value
Avalanche-rated70 mJ single-pulse EAS enables reliable inductive load switching without external protection
dv/dt rated6 kV/µs immunity prevents false turn-on during fast transients in noisy automotive environments
AEC-Q101 qualifiedValidated for automotive under-hood use including temperature cycling, humidity, and mechanical shock
Halogen-free & RoHSComplies with IEC61249-2-21 and EU RoHS Directive for environmentally constrained production
175 °C operationFull parameter guarantee up to Tj = +175 °C eliminates thermal derating in engine compartment designs

Applications

Automotive Load SwitchingDC Motor Control

Use Scenario: High-side switching of fuel pump, radiator fan, or HVAC blower in 12 V/24 V vehicle electrical systems.

IC Role / Device Role / Timing Role: P-channel power switch controlling current flow from battery to load; operates in DC or PWM mode.

Use Value: Eliminates need for high-side N-channel driver ICs; leverages native high-side topology with simple gate pull-up.

Use Scenario: Bidirectional or unidirectional speed control of brushed DC motors in power seats, window lifts, and sunroofs.

IC Role / Device Role / Timing Role: Low-loss power stage element in H-bridge half-bridge configuration; handles peak currents up to -35.2 A pulsed.

Use Value: Low RDS(on) and fast switching reduce heat generation and enable compact PCB layout with minimal copper area.

Industrial Solenoid DriversPower Supply OR-ing

Use Scenario: Driving 24 V industrial solenoids and valves requiring surge-tolerant, high-reliability switching.

IC Role / Device Role / Timing Role: Robust power switch handling inductive kickback; used with freewheeling diode or active clamp.

Use Value: Avalanche rating absorbs stored magnetic energy without failure, reducing BOM count and improving MTBF.

Use Scenario: Reverse-polarity protection and redundant supply OR-ing in dual-battery or backup power systems.

IC Role / Device Role / Timing Role: P-channel MOSFET configured as ideal diode replacement; blocks reverse current when VIN drops.

Use Value: Low VSD (-1.17 to -1.55 V) and fast trr (60–90 ns) minimize forward drop and recovery loss vs. Schottky diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
IRF9540NPbFVDS = -100 V, RDS(on) = 0.2 Ω @ -10 V, but higher Qg (44 nC) and no AEC-Q101 qualificationHigher voltage margin but slower switching and unsuitable for automotive qualification-critical designsSelect only for non-automotive industrial use where voltage headroom >60 V is required
STP8P06VDS = -60 V, RDS(on) = 0.3 Ω, but lower EAS (40 mJ) and no dv/dt ratingLacks avalanche and dv/dt robustness needed for inductive load switching in harsh environmentsAcceptable for benign DC loads only; avoid in motor/solenoid applications with fast transients

Compared with IRF9540NPbF and STP8P06, SPP08P06PHXKSA1 delivers superior automotive-grade reliability via AEC-Q101 certification, higher dv/dt immunity, and guaranteed avalanche performance-making it the preferred choice for safety-critical, thermally demanding, and transient-heavy automotive power switching.

Availability

SPP08P06PHXKSA1 is available at Aetrix Electronics and suitable for automotive load switching, DC motor control, industrial solenoid drivers, and power supply OR-ing requiring stable component supply across long production lifecycles.

Supply support for SPP08P06PHXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control solutions, with global manufacturing and quality certifications.

SPP08P06PHXKSA1 belongs to the SIPMOS™ family of discrete power MOSFETs, engineered specifically for high-reliability automotive and industrial switching applications demanding robustness, thermal resilience, and qualification compliance.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The SPP08P06PHXKSA1 supports -6.2 A continuous drain current at TC = 100 °C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PG-TO220-3 package and ensures safe operation without exceeding 175 °C junction temperature under typical heatsink conditions.

Is the body diode suitable for freewheeling in PWM motor drives?

Yes-the integrated body diode has a forward voltage of -1.17 to -1.55 V at -8.8 A and reverse recovery time of 60–90 ns, making it suitable for freewheeling in low-to-moderate frequency PWM motor drives. However, for high-efficiency or high-frequency (>50 kHz) operation, an external Schottky diode may be preferred to reduce conduction and switching losses.

Does this part require a gate resistor for safe operation?

A gate resistor is recommended to control dV/dt and prevent oscillation during switching. Typical values range from 10 Ω to 47 Ω depending on drive strength and layout parasitics. The datasheet specifies switching times using RG = 6 Ω, so design validation should confirm stability with the selected resistor value and actual PCB layout.

Can SPP08P06PHXKSA1 replace N-channel MOSFETs in high-side configurations?

Yes-its P-channel architecture allows direct high-side switching without level-shifting circuitry. When used as a high-side switch, the source connects to the positive rail and the load to the drain, enabling simple gate control with a microcontroller-compatible logic-level signal referenced to the source potential.

SPP08P06PHXKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
SIPMOS®
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
8.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
300mOhm @ 6.2A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
15 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
420 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
42W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO220-3

SPP08P06PHXKSA1 FAQ

1.How can I place an order for SPP08P06PHXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP08P06PHXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP08P06PHXKSA1 reliable?

The price and inventory of SPP08P06PHXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP08P06PHXKSA1 is usually 5 days.

3.What payment methods are accepted for SPP08P06PHXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP08P06PHXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP08P06PHXKSA1?

SPP08P06PHXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP08P06PHXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP08P06PHXKSA1?

For technical support, including SPP08P06PHXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP08P06PHXKSA1 requirements.

6.How does Aetrix verify that SPP08P06PHXKSA1 is sourced from the original manufacturer or authorized distributors?

All SPP08P06PHXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP08P06PHXKSA1 meets industry standards.

7.What is the process for return or replacement of SPP08P06PHXKSA1?

All SPP08P06PHXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPP08P06PHXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP08P06PHXKSA1 part is unused and in its original packaging.

Return procedure for SPP08P06PHXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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