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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP100N03S2-03

Name: SPP100N03S2-03
Brand: Infineon Technologies
SKU: SPP100N03S2-03
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP100N03S2-03

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP100N03S2-03.pdf

Description:: MOSFET N-CH 30V 100A TO220-3

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Product details

Overview

SPP100N03S2-03 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™ power MOSFET in TO-220-3-1 package, rated for 30 V V_DS, 100 A continuous drain current at T_C = 25 °C, and 2.5 mΩ typical R_DS(on) at V_GS = 10 V and I_D = 80 A. It supports 175 °C operation, is avalanche-rated (E_AS = 810 mJ), and features low gate charge (Q_g = 113–150 nC) for high-efficiency switching in DC-DC converters and motor drives.

For engineers reviewing the SPP100N03S2-03 datasheet, SPP100N03S2-03 pinout, SPP100N03S2-03 application, or SPP100N03S2-03 equivalent, key selection criteria include its 30 V breakdown voltage, 2.5 mΩ on-resistance at 100 A, thermal resistance R_thJC = 0.3–0.5 K/W, 175 °C max junction temperature, and dv/dt rating of 6 kV/µs for robust commutation in hard-switched topologies.

Technical Context

This MOSFET employs Infineon's OptiMOS™ S2 silicon process optimized for low R_DS(on) × Q_g figure-of-merit (FOM), enabling high efficiency in high-current, medium-voltage switching applications. Its 175 °C rated junction temperature and 810 mJ single-pulse avalanche energy support reliable operation under transient overloads and short-circuit conditions without external snubbers.

The device integrates a fast, low-loss body diode with t_rr = 79–100 ns and Q_rr = 109–136 nC, and exhibits stable transconductance (g_fs = 71–142 S) across its operating range-critical for predictable gate drive design and current regulation in synchronous rectification and half-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage before avalanche onset; suitable for 24 V bus systems with margin.
R_DS(on) max	3.3 mΩ - Worst-case on-resistance at V_GS = 10 V, I_D = 80 A, T_j = 25 °C; defines conduction loss in high-current paths.
I_D cont.	100 A - Continuous drain current at case temperature T_C = 25 °C; derates to zero at T_C ≈ 160 °C per curve.
E_AS	810 mJ - Single-pulse avalanche energy at I_D = 80 A, V_DD = 25 V, R_GS = 25 Ω; enables unclamped inductive switching survival.
Q_g	113–150 nC - Total gate charge at V_GS = 0–10 V, V_DD = 24 V, I_D = 100 A; determines gate driver power and switching speed trade-off.
R_thJC	0.3–0.5 K/W - Junction-to-case thermal resistance; enables high-power dissipation with minimal heatsink interface loss.
t_r/t_f	40–60 ns / 39–59 ns - Rise/fall times at V_DD = 15 V, I_D = 100 A, R_G = 2.2 Ω; sets minimum practical switching frequency and EMI profile.

Pinout & Package

Package: TO-220-3-1 (P-TO220-3-1), through-hole, isolated tab, standard leaded outline per JEDEC TO-220AB. Thermal pad electrically connected to drain.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path, high-side switch node	Electrically connected to metal tab; requires insulated mounting or direct heatsink connection with dielectric interface.
Source	Reference node for gate drive and current sensing	Low-inductance return path; critical for accurate shunt-based current monitoring and gate loop stability.
Gate	Control terminal for channel modulation	High-impedance input requiring <100 nA leakage; sensitive to ESD and ringing; needs local RC snubber for dv/dt immunity.

Key Features

Feature	Design Value
Optimized FOM (R_DS(on) × Q_g)	Enables >95% efficiency in 24 V synchronous buck converters at 100 A output with minimal gate drive loss.
175 °C maximum junction temperature	Supports operation in sealed enclosures or high-ambient environments without forced air cooling.
Avalanche-rated (E_AS = 810 mJ)	Eliminates need for external clamping circuits in inductive load switching (e.g., solenoid drivers, BLDC phase legs).
dv/dt rated (6 kV/µs)	Prevents false turn-on during high dV/dt commutation events in half-bridge and full-bridge inverters.
Low R_thJC (0.3 K/W typ)	Allows 300 W power dissipation with ≤150 K temperature rise from junction to heatsink surface.

Applications

Motor Drive Inverter

Industrial DC-DC Converter

Use Scenario: Half-bridge leg in 24 V brushless DC motor controller driving 5–10 kW fans or pumps.

IC Role / Device Role / Timing Role: High-side and low-side switching element handling 100 A peak phase current with 20 kHz PWM.

Use Value: Low R_DS(on) reduces conduction loss by >30% vs. legacy 4 mΩ MOSFETs; 175 °C rating avoids thermal shutdown during stall conditions.

Use Scenario: Primary-side synchronous rectifier in 24 V input, 12 V/100 A isolated DC-DC module for telecom power shelves.

IC Role / Device Role / Timing Role: Secondary-side power switch in center-tapped or LLC resonant topology, conducting 100 A continuously.

Use Value: Fast body diode (t_rr < 100 ns) minimizes reverse recovery loss; low Q_rr enables zero-voltage switching (ZVS) extension.

Automotive HVAC Blower

Server VRM High-Current Phase

Use Scenario: PWM-controlled blower motor driver in 12 V/24 V commercial vehicle HVAC systems.

IC Role / Device Role / Timing Role: Low-side switch in high-side controlled configuration, switching at 1–5 kHz with 80 A RMS current.

Use Value: Avalanche rating withstands inductive kickback from motor windings during abrupt PWM termination; 175 °C rating meets AEC-Q101 extended temp requirements.

Use Scenario: 30 A per phase in 4-phase 12 V → 0.8 V server VRM delivering 120 A to CPU core.

IC Role / Device Role / Timing Role: High-current power stage switch operating at 500–1000 kHz with tight duty cycle control.

Use Value: Low R_DS(on) × Q_g FOM reduces both conduction and switching losses simultaneously, improving VRM efficiency by 0.8–1.2% at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	R_DS(on) = 4.0 mΩ (max), Q_g = 131 nC, T_jmax = 175 °C, TO-220AB package	Higher conduction loss at 100 A; slower switching due to higher C_iss (3600 pF vs. 5300–7020 pF)	Select when cost sensitivity outweighs efficiency; verify thermal margin with R_thJC = 0.75 K/W.
STP100NF03L	R_DS(on) = 3.0 mΩ (max), Q_g = 120 nC, T_jmax = 175 °C, TO-220FP package (isolated)	Same R_DS(on) spec but higher R_thJC (0.8 K/W); no avalanche rating specified	Acceptable where avalanche stress is absent; avoid in inductive switching without external protection.

Compared with IRF1404PBF and STP100NF03L, SPP100N03S2-03 delivers superior thermal performance (R_thJC ≤ 0.5 K/W), verified avalanche ruggedness (810 mJ), and lower FOM-making it optimal for high-reliability, high-current, hard-switched industrial and automotive power stages.

Availability

SPP100N03S2-03 is available at Aetrix Electronics and suitable for motor drive inverters, industrial DC-DC converters, and automotive HVAC blowers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for SPP100N03S2-03 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

SPP100N03S2-03 belongs to the OptiMOS™ S2 power MOSFET product line, engineered specifically for high-current, medium-voltage switching in industrial motor drives, server power supplies, and automotive electrification systems.

FAQ

What is the maximum safe operating temperature for SPP100N03S2-03?

The absolute maximum junction temperature is +175 °C, and the storage temperature range is –55 °C to +175 °C. Operation above 150 °C requires careful thermal design using the provided Z_thJC(t_p) curves and derating of I_D per Figure 2. The device is qualified for continuous operation at 175 °C junction temperature under defined thermal boundary conditions.

Is SPP100N03S2-03 suitable for synchronous rectification in a 24 V to 12 V LLC converter?

Yes-its low R_DS(on) (2.5 mΩ typ), fast body diode (t_rr = 79–100 ns), and low Q_rr (109–136 nC) make it well-suited for secondary-side synchronous rectification in 24 V input LLC converters delivering up to 100 A. Gate drive must be precisely timed to avoid shoot-through, leveraging its 5.6 V gate plateau voltage for robust threshold control.

Does SPP100N03S2-03 have a fully rated avalanche capability?

Yes-it is fully specified and tested for single-pulse avalanche energy (E_AS = 810 mJ at I_D = 80 A, V_DD = 25 V, R_GS = 25 Ω) and repetitive avalanche (E_AR = 30 mJ), with guaranteed operation up to 175 °C junction temperature. This enables reliable use in unclamped inductive switching without external snubbers.

Can SPP100N03S2-03 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (see Figure 9) ensures inherent current sharing when paralleled. Designers must match gate drive loop inductance and layout symmetry, and use individual gate resistors (≥2.2 Ω) to damp oscillation. Derate total current by 15% for thermal margin and ensure uniform heatsinking across all devices.

SPP100N03S2-03 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7020 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP100N03S2-03 FAQ

1.How can I place an order for SPP100N03S2-03 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP100N03S2-03 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP100N03S2-03 reliable?

The price and inventory of SPP100N03S2-03 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP100N03S2-03 is usually 5 days.

3.What payment methods are accepted for SPP100N03S2-03?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP100N03S2-03 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP100N03S2-03?

SPP100N03S2-03 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP100N03S2-03 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP100N03S2-03?

For technical support, including SPP100N03S2-03 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP100N03S2-03 requirements.

6.How does Aetrix verify that SPP100N03S2-03 is sourced from the original manufacturer or authorized distributors?

All SPP100N03S2-03 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP100N03S2-03 meets industry standards.

7.What is the process for return or replacement of SPP100N03S2-03?

All SPP100N03S2-03 units undergo pre-shipment inspection (PSI). If there is an issue with SPP100N03S2-03, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP100N03S2-03 part is unused and in its original packaging.

Return procedure for SPP100N03S2-03:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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