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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP100N03S203

Name: SPP100N03S203
Brand: Infineon Technologies
SKU: SPP100N03S203
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP100N03S203

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP100N03S203.pdf

Description:: MOSFET N-CH 30V 100A TO220-3

Quantity:: RFQ Add To RFQ list

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Inventory:3,718

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Product details

Overview

SPP100N03S203 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in TO-220-3 package, rated for 30 V V_DS, 100 A I_D (T_C=25°C), and 4.5 mΩ R_DS(on) at V_GS=10 V. It delivers low conduction loss in high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the SPP100N03S203 datasheet, SPP100N03S203 pinout, SPP100N03S203 application, or SPP100N03S203 equivalent, key selection criteria include R_DS(on) vs. gate charge trade-off, SOA robustness under pulsed load, thermal resistance to heatsink, and avalanche energy rating for inductive switching.

Technical Context

This device uses Infineon's OptiMOS™ 2 technology, optimized for high-efficiency synchronous rectification and high-frequency PWM switching up to 500 kHz. Its trench-gate structure enables low Q_g (47 nC) and low Q_gd/Q_g ratio (0.18), reducing switching losses and improving EMI behavior.

The MOSFET features 100% UIS-tested avalanche capability (E_AS = 420 mJ at T_J=25°C), integrated body diode with soft recovery (t_rr = 55 ns), and specified safe operating area (SOA) for linear-mode operation up to 100 µs pulse width.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum drain-source blocking voltage for 12 V automotive and industrial bus applications.
I_D (T_C=25°C)	100 A - Continuous DC current capability with adequate heatsinking; derates to 70 A at T_C=100°C.
R_DS(on) @ V_GS=10 V	4.5 mΩ - Enables <1 W conduction loss at 15 A, critical for high-current power stages.
Q_g	47 nC - Low total gate charge supports efficient 100–300 kHz switching with standard gate drivers.
E_AS	420 mJ - Confirmed single-pulse avalanche energy ensures reliability during inductive turn-off transients.
R_θJC	0.9 K/W - Junction-to-case thermal resistance enables direct mounting to heatsink for thermal management.

Pinout & Package

TO-220-3 package with isolated tab (drain-connected), standard through-hole mounting, and JEDEC outline TO-220AB. Thermal pad requires mechanical clamping and thermal interface material for optimal heat transfer.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to PCB ground plane or source return path.
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <100 Ω series resistance to damp ringing.
Pin 3 (Drain)	Power output / high-side switch node	Internally connected to metal tab; must be electrically isolated from heatsink unless drain-referenced.

Key Features

Feature	Design Value
OptiMOS™ 2 trench process	Enables simultaneous optimization of R_DS(on) and Q_g, reducing both conduction and switching losses.
100% UIS-tested avalanche	Guarantees robustness against inductive kickback without external snubbers in motor control.
Low Q_gd/Q_g ratio (0.18)	Improves Miller immunity and reduces risk of spurious turn-on in high-dV/dt environments.
Soft-recovery body diode	t_rr = 55 ns with low reverse recovery charge (Q_rr = 110 nC) minimizes commutation loss in synchronous rectifiers.

Applications

DC-DC Converter Power Stage

Automotive Body Control Module

Use Scenario: High-current buck converter in 12 V automotive systems delivering up to 60 A to ADAS ECUs.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET in dual-phase interleaved topology.

Use Value: 4.5 mΩ R_DS(on) limits conduction loss to <0.5 W at 15 A, enabling compact thermal design without forced air.

Use Scenario: Load switch for headlight LED driver with PWM dimming and short-circuit protection.

IC Role / Device Role / Timing Role: High-current N-channel switch controlled by microcontroller GPIO with external gate driver.

Use Value: 420 mJ E_AS withstands lamp cold-resistance surge and relay bounce without failure.

Industrial Motor Drive Half-Bridge

Server PSU Primary-Side Switch

Use Scenario: 24 V BLDC motor control in HVAC blowers with 10–20 kHz PWM commutation.

IC Role / Device Role / Timing Role: Low-side switch in three-phase inverter leg, paired with complementary high-side MOSFET.

Use Value: Low Q_g (47 nC) allows use of cost-effective 1-A peak gate driver ICs while maintaining <100 ns switching transitions.

Use Scenario: Primary-side switch in 80+ Titanium 1 kW server power supply operating at 200 kHz.

IC Role / Device Role / Timing Role: Hard-switched MOSFET in LLC resonant converter primary leg.

Use Value: Soft-recovery body diode (t_rr = 55 ns) reduces dead-time loss and improves ZVS margin at light load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP100N3LLH6 (STMicroelectronics)	R_DS(on) = 4.0 mΩ @ 10 V, Q_g = 52 nC, no UIS rating published	Lacks guaranteed avalanche testing; requires external clamping in inductive loads	Preferable where lower R_DS(on) dominates and avalanche stress is absent
IRF1404ZPBF (Infineon)	R_DS(on) = 4.7 mΩ @ 10 V, Q_g = 131 nC, E_AS = 350 mJ	Higher gate charge increases driver complexity and switching loss at >100 kHz	Preferred for lower-cost, lower-frequency (<50 kHz) applications with less stringent EMI requirements

Compared with STP100N3LLH6 and IRF1404ZPBF, SPP100N03S203 uniquely balances low R_DS(on), moderate Q_g, and fully tested avalanche capability-making it optimal for high-frequency, high-reliability 12–24 V industrial and automotive power stages.

Availability

SPP100N03S203 is available at Aetrix Electronics and suitable for automotive body electronics, server power supplies, and industrial motor drives requiring stable component supply and long-term manufacturability.

Supply support for SPP100N03S203 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and security solutions, with global manufacturing and R&D centers.

SPP100N03S203 belongs to the OptiMOS™ 2 power MOSFET product line, engineered for high-efficiency, high-current switching in 12 V and 24 V systems where thermal performance and ruggedness are critical.

FAQ

What is the maximum continuous drain current at T_C = 100°C?

The SPP100N03S203 supports 70 A continuous drain current when case temperature is maintained at 100°C, per its SOA curve and thermal derating specification. This assumes proper heatsink interface with ≤0.9 K/W R_θJC and ambient airflow sufficient to limit T_C.

Does this MOSFET require a gate resistor, and what value is recommended?

A series gate resistor between 10 Ω and 47 Ω is recommended to dampen gate oscillation and control dV/dt during switching. The exact value depends on driver strength and layout parasitics; 22 Ω is typical for 1-A peak drivers in motor control applications.

Is the TO-220 tab electrically isolated, and how should it be mounted?

Yes-the TO-220-3 package has an isolated metal tab internally connected to the drain. Mounting requires electrical isolation (e.g., mica washer + thermal paste) unless the heatsink is drain-referenced. Mechanical clamping force must exceed 25 N to ensure R_θJC ≤ 0.9 K/W.

Can SPP100N03S203 replace IRF1404 in existing designs?

Yes, with minor layout review: SPP100N03S203 offers lower R_DS(on) (4.5 mΩ vs. 4.7 mΩ) and significantly lower Q_g (47 nC vs. 131 nC), enabling faster switching and reduced driver loading. Gate threshold (2–4 V) and pinout are identical, supporting drop-in replacement in most cases.

SPP100N03S203 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Bulk

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7020 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP100N03S203 FAQ

1.How can I place an order for SPP100N03S203 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP100N03S203 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP100N03S203 reliable?

The price and inventory of SPP100N03S203 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP100N03S203 is usually 5 days.

3.What payment methods are accepted for SPP100N03S203?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP100N03S203 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP100N03S203?

SPP100N03S203 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP100N03S203 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP100N03S203?

For technical support, including SPP100N03S203 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP100N03S203 requirements.

6.How does Aetrix verify that SPP100N03S203 is sourced from the original manufacturer or authorized distributors?

All SPP100N03S203 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP100N03S203 meets industry standards.

7.What is the process for return or replacement of SPP100N03S203?

All SPP100N03S203 units undergo pre-shipment inspection (PSI). If there is an issue with SPP100N03S203, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP100N03S203 part is unused and in its original packaging.

Return procedure for SPP100N03S203:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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