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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP100N03S2L-03

Name: SPP100N03S2L-03
Brand: Infineon Technologies
SKU: SPP100N03S2L-03
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP100N03S2L-03

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP100N03S2L-03.pdf

Description:: MOSFET N-CH 30V 100A TO220-3

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Product details

Overview

SPP100N03S2L-03 from Infineon Technologies is an N-channel enhancement-mode logic-level power MOSFET in TO-220-3-1 package, rated for 30 V V_DS, 100 A continuous drain current at T_C = 25 °C, and 2.7 mΩ typical R_DS(on) at V_GS = 10 V. It supports high-current DC/DC conversion, motor drive half-bridges, and industrial power switching with 175 °C maximum junction temperature and avalanche-rated operation.

For engineers reviewing the SPP100N03S2L-03 datasheet, SPP100N03S2L-03 pinout, SPP100N03S2L-03 application, or SPP100N03S2L-03 equivalent, key selection criteria include its low gate charge × R_DS(on) figure of merit (FOM), 6 kV/µs dv/dt rating, thermal resistance of 0.3 K/W (junction-to-case), and integrated avalanche energy capability of 810 mJ.

Technical Context

This MOSFET operates in enhancement mode with a gate threshold voltage of 1.2–2.0 V and is optimized for logic-level drive (fully enhanced at V_GS ≥ 4.5 V). Its dynamic parameters include C_iss = 6160–8180 pF, Q_g = 166–220 nC, and t_d(on)/t_r/t_d(off)/t_f = 15–23 / 67–100 / 83–125 / 65–98 ns under standard test conditions.

The device integrates a robust body diode with reverse recovery time t_rr = 86–108 ns and Q_rr = 100–125 nC, enabling efficient synchronous rectification and hard-switched topologies. Thermal design is supported by a low R_thJC of 0.3 K/W and validated operation up to 175 °C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - Maximum blocking voltage for 12 V and 24 V automotive and industrial bus systems
R_DS(on) @ V_GS = 10 V	2.2–2.7 mΩ - Enables <1.5 W conduction loss at 80 A, critical for high-efficiency power stages
I_D (continuous)	100 A @ T_C = 25 °C - Supports high-current load switching without external heatsink derating at ambient
E_AS	810 mJ - Withstands single-pulse inductive energy without failure in motor control or SMPS freewheeling
dv/dt rating	6 kV/µs - Ensures reliable operation in fast-switching circuits without spurious turn-on
T_j max	175 °C - Allows sustained operation in sealed enclosures or high-ambient industrial environments
Q_g	166–220 nC - Determines gate driver power requirement and switching loss trade-off at 100 kHz+ frequencies

Pinout & Package

Package: TO-220-3-1 (P-TO220-3-1), through-hole, isolated tab, leaded, vertical mounting orientation. Thermal path optimized via copper-clad PCB footprint (min. 6 cm² drain pad) and mechanical clamping for low R_thJC.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, electrically connected to metal tab	Primary heat dissipation path; must be thermally coupled to heatsink or large copper area
Source	Reference node for gate drive and current sensing	Low-inductance connection required for stable switching and accurate current monitoring
Gate	Control input for channel conduction	High-impedance node requiring low-ESR gate resistor (RG = 1.1 Ω typical) to damp ringing

Key Features

Feature	Design Value
Logic-level gate drive compatibility	Full enhancement at V_GS ≥ 4.5 V - eliminates need for level-shifting drivers in 5 V or 3.3 V microcontroller interfaces
Optimized FOM (Q_g × R_DS(on))	~470–594 nC·mΩ - balances switching speed and conduction loss for 50–200 kHz power converters
Avalanche-rated operation	810 mJ single-pulse E_AS - enables ruggedness in unclamped inductive switching without external snubbers
Superior thermal resistance	R_thJC = 0.3 K/W - reduces junction temperature rise by >40% vs. standard TO-220 MOSFETs at same power dissipation
175 °C rated junction temperature	Extended safe operating area at elevated ambient - supports compact, fanless industrial designs

Applications

Motor Control Half-Bridge

DC/DC Synchronous Rectifier

Use Scenario: High-current BLDC motor phase leg in HVAC blowers or industrial pumps.

IC Role / Device Role / Timing Role: Low-side switch in 3-phase inverter stage, commutated at 10–20 kHz with PWM dead-time control.

Use Value: 2.7 mΩ R_DS(on) limits I²R loss to ≤2.2 W at 100 A, reducing heatsink size by 35% versus 4.5 mΩ alternatives.

Use Scenario: Secondary-side synchronous rectification in 48 V → 12 V telecom DC/DC converter.

IC Role / Device Role / Timing Role: Fast-recovery body diode and low-R_DS(on) channel used for bidirectional current handling during ZVS transitions.

Use Value: t_rr = 86 ns and Q_rr = 100 nC minimize reverse recovery loss, improving efficiency by 1.2% at full load.

Industrial Power Switch

Hot-Swap Controller

Use Scenario: 24 V DC distribution board main switch with overcurrent and short-circuit protection.

IC Role / Device Role / Timing Role: Main pass element controlled by external current-sense amplifier and comparator circuitry.

Use Value: 175 °C T_j max and 6 kV/µs dv/dt rating ensure reliability during repeated fault events and bus transients.

Use Scenario: Inrush current limiting and fault isolation in modular server power supplies.

IC Role / Device Role / Timing Role: High-side switch placed between backplane and load card, driven by dedicated hot-swap controller IC.

Use Value: Avalanche energy rating (810 mJ) absorbs stored energy during sudden load disconnect, preventing catastrophic failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PbF	R_DS(on) = 4.0 mΩ @ 10 V; Q_g = 131 nC; T_j max = 175 °C; TO-220AB package	Higher conduction loss, lower gate charge - better for lower-frequency, higher-voltage margin applications	Select when cost sensitivity outweighs efficiency targets and thermal headroom is available
STP100NF03L	R_DS(on) = 3.2 mΩ @ 10 V; Q_g = 120 nC; T_j max = 175 °C; TO-220FP package	Higher R_DS(on), lower Q_g, non-isolated tab - requires insulating washer and larger heatsink	Prefer where gate drive strength is limited and isolation is not required

Compared with IRF1404PbF and STP100NF03L, SPP100N03S2L-03 delivers superior conduction efficiency and thermal performance due to its 2.7 mΩ R_DS(on) and 0.3 K/W R_thJC, making it optimal for space-constrained, high-current industrial power stages where thermal management is critical.

Availability

SPP100N03S2L-03 is available at Aetrix Electronics and suitable for motor control half-bridges, DC/DC synchronous rectifiers, and industrial power switches requiring stable component supply across production lifecycles.

Supply support for SPP100N03S2L-03 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the OptiMOS™ power transistor product line, engineered specifically for high-current, high-efficiency switching in automotive, industrial, and computing power systems where low R_DS(on), fast switching, and ruggedness are essential.

FAQ

What is the maximum continuous drain current for SPP100N03S2L-03 at 100 °C case temperature?

At T_C = 100 °C, the maximum continuous drain current is derated to approximately 60 A, as shown in Figure 2 of the datasheet. This reflects thermal limitations of the TO-220 package and assumes proper heatsinking with R_thJC = 0.3 K/W and ambient airflow conditions.

Is SPP100N03S2L-03 suitable for use in a 48 V battery system?

No - its 30 V V_DS rating makes it unsuitable for direct 48 V bus switching. It is designed for 12 V and 24 V nominal systems where transient overvoltages remain below 30 V. For 48 V applications, a 60 V or higher V_DS MOSFET is required.

Does this MOSFET require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control switching speed and suppress oscillation. The datasheet specifies R_G = 1.1 Ω for dynamic characterization. For most applications, a 2.2–10 Ω resistor balances EMI reduction and switching loss, depending on layout parasitics and driver capability.

Can the body diode be used for reverse current conduction in bidirectional power flow?

Yes - the integrated body diode is rated for 100 A continuous forward current and exhibits t_rr = 86–108 ns with Q_rr = 100–125 nC, supporting bidirectional conduction in synchronous rectification and regenerative braking circuits when properly managed with dead-time control.

SPP100N03S2L-03 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 220 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8180 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP100N03S2L-03 FAQ

1.How can I place an order for SPP100N03S2L-03 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP100N03S2L-03 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP100N03S2L-03 reliable?

The price and inventory of SPP100N03S2L-03 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP100N03S2L-03 is usually 5 days.

3.What payment methods are accepted for SPP100N03S2L-03?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP100N03S2L-03 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP100N03S2L-03?

SPP100N03S2L-03 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP100N03S2L-03 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP100N03S2L-03?

For technical support, including SPP100N03S2L-03 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP100N03S2L-03 requirements.

6.How does Aetrix verify that SPP100N03S2L-03 is sourced from the original manufacturer or authorized distributors?

All SPP100N03S2L-03 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP100N03S2L-03 meets industry standards.

7.What is the process for return or replacement of SPP100N03S2L-03?

All SPP100N03S2L-03 units undergo pre-shipment inspection (PSI). If there is an issue with SPP100N03S2L-03, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP100N03S2L-03 part is unused and in its original packaging.

Return procedure for SPP100N03S2L-03:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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