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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP100N04S2-04

Name: SPP100N04S2-04
Brand: Infineon Technologies
SKU: SPP100N04S2-04
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP100N04S2-04

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP100N04S2-04.pdf

Description:: MOSFET N-CH 40V 100A TO220-3

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Product details

Overview

SPP100N04S2-04 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in TO-220-3 package, rated for 40 V V_DS, 100 A continuous drain current at T_C = 25 °C, and 3.3 mΩ max R_DS(on) at V_GS = 10 V. It features avalanche rating, 6 kV/µs dv/dt capability, and 175 °C maximum junction temperature-designed for high-current DC-DC converters and motor drive half-bridges.

For engineers reviewing the SPP100N04S2-04 datasheet, SPP100N04S2-04 pinout, SPP100N04S2-04 application, or SPP100N04S2-04 equivalent, key selection criteria include R_DS(on) stability over temperature, unclamped inductive switching (UIS) robustness, gate charge profile for PWM efficiency, and thermal resistance (R_thJC = 0.5 K/W) in high-power conduction paths.

Technical Context

This OptiMOS™ device uses trench-gate superjunction technology to achieve low on-resistance with fast switching dynamics. Its 5430 pF typical input capacitance (C_iss) and 129 nC total gate charge support efficient 100 kHz–500 kHz hard-switched operation in synchronous rectification and H-bridge topologies.

The integrated body diode exhibits 153 nC reverse recovery charge (Q_rr) and 66 ns t_rr at 100 A, enabling moderate-frequency freewheeling without external Schottky supplementation. Thermal design must account for its 0.3–0.5 K/W junction-to-case resistance under PCB-mounted conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	40 V - supports 24 V and 36 V nominal bus systems with 20 % margin for transients
R_DS(on) max	3.3 mΩ at V_GS = 10 V, I_D = 80 A - enables ≤3.3 W conduction loss at 100 A
I_D Continuous	100 A at T_C = 25 °C - requires heatsinking to sustain full current in ambient >50 °C
E_AS	810 mJ single-pulse avalanche energy - withstands unclamped inductive turn-off in motor phase legs
dv/dt Rating	6 kV/µs - ensures noise-immune operation in high-di/dt gate-drive environments
Q_g Total	129–172 nC - determines gate-driver peak current requirement (~2.5 A for 70 ns rise time)
V_GS(th)	2.1–4.0 V - compatible with 3.3 V and 5 V logic-level controllers without level-shifting

Pinout & Package

Package: TO-220-3 (P-TO220-3-1), through-hole mounting with isolated tab (drain-connected). Thermal pad designed for direct heatsink interface; recommended solder footprint per Infineon ANPS071E.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to ground or current-sense shunt
Pin 2 (Gate)	Control input	High-impedance MOSFET gate requiring <100 nA leakage control
Pin 3 (Drain)	Power output	Tab-connected drain; electrically and thermally coupled to heatsink

Key Features

Feature	Design Value
Avalanche-rated operation	810 mJ single-pulse E_AS enables reliable unclamped inductive switching in motor drives
High-temperature capability	Rated for continuous operation up to 175 °C junction temperature
Low gate charge	Q_gd = 53–80 nC minimizes Miller-induced shoot-through risk in bridge configurations
Fast body diode	t_rr = 66–80 ns and Q_rr = 153–190 nC reduce freewheeling losses in synchronous rectifiers
Thermal performance	R_thJC = 0.3–0.5 K/W allows 300 W dissipation with modest heatsink interface resistance

Applications

Motor Drive Half-Bridge

DC-DC Synchronous Rectifier

Use Scenario: High-current BLDC motor phase leg in e-bike controller with 48 V bus and 100 A peak load.

IC Role / Device Role / Timing Role: Low-side switch in complementary PWM-controlled half-bridge; conducts during freewheeling interval.

Use Value: 3.3 mΩ R_DS(on) limits conduction loss to 33 W at 100 A, reducing heatsink size by 40 % vs. 5 mΩ alternatives.

Use Scenario: Secondary-side synchronous rectifier in 48 V → 12 V isolated DC-DC converter delivering 100 A.

IC Role / Device Role / Timing Role: Power FET replacing Schottky diode; driven by transformer-coupled gate signal synchronized to primary switch.

Use Value: 0.9–1.3 V V_SD forward drop cuts rectifier loss by >60 % versus 45 V Schottky at 80 A.

Industrial UPS Inverter

Automotive 12 V/48 V Bi-Directional Converter

Use Scenario: Output inverter stage of 3 kW line-interactive UPS converting 48 V battery to 230 V AC via H-bridge.

IC Role / Device Role / Timing Role: High-current switching element in full-bridge topology; subjected to repetitive UIS events during grid failure transitions.

Use Value: 810 mJ E_AS rating ensures survival across ≥1000 unclamped inductive cycles without degradation.

Use Scenario: Bidirectional buck-boost stage connecting automotive 12 V starter battery and 48 V mild-hybrid rail.

IC Role / Device Role / Timing Role: Power switch operating in both directions; body diode conducts reverse current during boost mode.

Use Value: 100 A continuous I_S and 66 ns t_rr enable efficient 50 kHz bi-directional power transfer with <2 % conduction loss asymmetry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4110PBF	R_DS(on) = 3.2 mΩ, Q_g = 145 nC, TO-220AB package, no official avalanche rating	Lacks specified E_AS; unsuitable for unclamped inductive loads without external clamping	Select only if avalanche stress is absent and gate drive can support higher Q_g
STL110N4LF6	R_DS(on) = 3.0 mΩ, Q_g = 110 nC, TO-220FP (full-pack) package, 175 °C T_j	Lower Q_g improves switching efficiency but reduced thermal mass increases transient junction temperature	Prefer for space-constrained designs where gate drive loss dominates over conduction loss

Compared with IRFB4110PBF and STL110N4LF6, SPP100N04S2-04 offers verified avalanche ruggedness and superior thermal resistance (R_thJC = 0.5 K/W), making it optimal for high-reliability industrial motor drives where inductive fault energy must be absorbed internally.

Availability

SPP100N04S2-04 is available at Aetrix Electronics and suitable for motor drives, DC-DC converters, and uninterruptible power supplies requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from Infineon's qualified production lines.

Supply support for SPP100N04S2-04 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power electronics, automotive ICs, and security solutions, with global R&D and wafer fabrication facilities.

This device belongs to the OptiMOS™ power transistor product line, engineered specifically for high-efficiency, high-current switching in industrial motor control and server/telecom power supplies.

FAQ

What is the maximum allowable gate-source voltage for SPP100N04S2-04?

The absolute maximum V_GS is ±20 V. Operation beyond ±16 V risks permanent gate oxide damage. For reliable 10 V gate drive, use a Zener clamp or dedicated gate driver with regulated output to prevent overshoot during fast switching transitions.

Can SPP100N04S2-04 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (increasing ~0.5 %/°C) enables inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling to ensure ΔT_j < 5 °C between devices for balanced conduction.

Is the TO-220-3 package electrically isolated?

No-the metal tab is internally connected to the drain terminal. Electrical isolation requires insulating hardware (e.g., silicone pad + shoulder washer) and verification of dielectric strength ≥2.5 kV RMS between tab and heatsink per IEC 60950-1.

What is the safe operating area (SOA) limitation at 100 °C case temperature?

At T_C = 100 °C, the continuous current limit drops to ~60 A due to thermal derating. The SOA curve (Fig. 3) shows that pulsed operation at 100 A is permitted only for ≤10 ms at V_DS = 20 V, constrained by both thermal inertia and secondary breakdown limits.

SPP100N04S2-04 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.6mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 172 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7220 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP100N04S2-04 FAQ

1.How can I place an order for SPP100N04S2-04 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP100N04S2-04 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP100N04S2-04 reliable?

The price and inventory of SPP100N04S2-04 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP100N04S2-04 is usually 5 days.

3.What payment methods are accepted for SPP100N04S2-04?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP100N04S2-04 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP100N04S2-04?

SPP100N04S2-04 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP100N04S2-04 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP100N04S2-04?

For technical support, including SPP100N04S2-04 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP100N04S2-04 requirements.

6.How does Aetrix verify that SPP100N04S2-04 is sourced from the original manufacturer or authorized distributors?

All SPP100N04S2-04 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP100N04S2-04 meets industry standards.

7.What is the process for return or replacement of SPP100N04S2-04?

All SPP100N04S2-04 units undergo pre-shipment inspection (PSI). If there is an issue with SPP100N04S2-04, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP100N04S2-04 part is unused and in its original packaging.

Return procedure for SPP100N04S2-04:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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