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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP100N04S2L-03

Name: SPP100N04S2L-03
Brand: Infineon Technologies
SKU: SPP100N04S2L-03
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP100N04S2L-03

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP100N04S2L-03.pdf

Description:: MOSFET N-CH 40V 100A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SPP100N04S2L-03 from Infineon Technologies is an N-channel enhancement-mode logic-level power MOSFET in TO-220-3 package, rated for 40 V V_DS, 100 A continuous drain current at T_C = 25 °C, and 3.1 mΩ max R_DS(on) at V_GS = 4.5 V. It features avalanche rating, 6 kV/µs dv/dt capability, and 175 °C maximum junction temperature-designed for high-current DC-DC converter primary-side switching in server power supplies.

For engineers reviewing the SPP100N04S2L-03 datasheet, SPP100N04S2L-03 pinout, SPP100N04S2L-03 application, or SPP100N04S2L-03 equivalent, key selection criteria include R_DS(on) at 4.5 V gate drive, single-pulse avalanche energy (810 mJ), thermal resistance (R_thJC = 0.5 K/W), and SOA compliance at 25 °C with pulse widths down to 12 µs.

Technical Context

This OptiMOS™ device uses trench-gate superjunction technology optimized for low conduction loss and fast switching in hard-switched topologies. Its logic-level gate threshold (1.2–2.0 V) enables direct drive from 3.3 V or 5 V controllers without level-shifting, while its 6000 pF C_iss and 170 nC total gate charge support efficient gate driving at up to 500 kHz in synchronous rectification stages.

The MOSFET integrates a robust body diode with 100 ns reverse recovery time and 150 nC Q_rr, enabling reliable operation in freewheeling paths of buck converters and motor H-bridges. Thermal design is anchored by a validated 0.5 K/W junction-to-case resistance, allowing 300 W dissipation at T_C = 25 °C under forced-air-cooled conditions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	40 V - Maximum blocking voltage for 12 V and 24 V input bus applications with 2× safety margin.
R_DS(on) max @ 4.5 V	3.1 mΩ - Enables ≤310 mW conduction loss at 100 A, critical for >95% efficiency in high-current POL converters.
I_D cont @ T_C=25°C	100 A - Supports single-device implementation in 500 W–1 kW power stages without paralleling.
E_AS	810 mJ - Withstands single-energy transients up to 80 A × 25 V without failure, eliminating need for external snubbers in flyback designs.
dv/dt rating	6 kV/µs - Immune to false turn-on during fast voltage transitions in half-bridge configurations with high dV/dt noise.
T_j max	175 °C - Allows sustained operation in thermally constrained environments such as sealed telecom rectifiers.
Q_g	170–230 nC - Determines gate driver peak current requirement (~1.7 A for 100 ns rise time with 10 Ω gate resistor).

Pinout & Package

Package: TO-220-3 (P-TO220-3-1), through-hole, isolated tab (drain-connected), standard lead pitch 2.54 mm.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to PCB ground plane or source return path with minimal inductance.
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <100 nA leakage; routed away from noisy power traces to prevent coupling.
Pin 3 (Drain)	Power output / high-side switch node	Internally bonded to metal tab; must be electrically isolated from heatsink unless using insulating pad and screw mounting.

Key Features

Feature	Design Value
Logic-level gate drive	Operates fully enhanced at V_GS ≥ 4.5 V-compatible with microcontroller GPIOs and low-voltage PWM ICs without gate drivers.
Avalanche-rated	Guaranteed single-pulse ruggedness to 810 mJ-enables use in inductive load switching without external clamping diodes.
175 °C operation	Extended thermal margin allows derating to 70 A at T_C = 100 °C-suitable for fanless industrial enclosures.
Low Q_gd/Q_g ratio	57/170 nC ≈ 33% - Reduces Miller-induced switching delay and improves hard-switching stability in LLC resonant converters.
Optimized body diode	Q_rr = 150–190 nC, t_rr = 80–100 ns - Minimizes reverse recovery loss and EMI in synchronous buck and full-bridge inverters.

Applications

Server VRM Phase Legs

Industrial DC-DC Converters

Use Scenario: High-density 48 V–12 V step-down conversion in AI accelerator racks with 300 A per rail.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier in multiphase buck converter, switching at 300–500 kHz.

Use Value: 3.1 mΩ R_DS(on) at 4.5 V reduces conduction loss by 42% vs. legacy 5 V gate MOSFETs, enabling 96.2% peak efficiency.

Use Scenario: 24 V input, 5 V/60 A output for PLC I/O modules in factory automation cabinets.

IC Role / Device Role / Timing Role: Low-side switch in non-isolated buck regulator with integrated controller and ceramic output filter.

Use Value: 175 °C rating permits operation at 85 °C ambient without derating, eliminating need for active cooling in sealed enclosures.

Motor Drive Half-Bridge

Telecom Rectifier Modules

Use Scenario: 24 V brushed DC motor control in automated guided vehicles (AGVs) with regenerative braking.

IC Role / Device Role / Timing Role: High-side switch in H-bridge with freewheeling via internal body diode during PWM off-time.

Use Value: 100 ns t_rr and 150 nC Q_rr limit diode recovery loss to <1.2 W at 20 kHz, reducing heatsink size by 35%.

Use Scenario: 48 V telecom rectifier output stage delivering 100 A to distributed power architecture backplanes.

IC Role / Device Role / Timing Role: OR-ing FET in hot-swap and redundancy circuits, conducting continuously with minimal forward drop.

Use Value: 0.9 V V_SD at 100 A yields 90 W conduction loss-30% lower than Schottky-based solutions at same current density.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRF1404PBF	R_DS(on) = 4.0 mΩ @ 10 V; no 4.5 V spec; 150 °C T_j max; 200 A I_D rating but higher Q_g (190 nC)	Requires 10 V gate drive for full enhancement-unsuitable for 3.3 V logic interfaces without level shift.	Select only when gate drive is ≥10 V and thermal margin exceeds 25 °C over SPP100N04S2L-03.
STP100NF04L	R_DS(on) = 3.7 mΩ @ 4.5 V; 175 °C rated; lower E_AS (520 mJ); C_iss = 5100 pF	Lower avalanche ruggedness limits use in inductive loads with unclamped energy >500 mJ.	Prefer for cost-sensitive 24 V motor drives where transient energy is controlled by external clamp networks.

Compared with IRF1404PBF and STP100NF04L, SPP100N04S2L-03 uniquely delivers sub-3.2 mΩ on-resistance at logic-level 4.5 V drive while maintaining 810 mJ avalanche capability and 175 °C operation-making it optimal for space-constrained, high-efficiency, and thermally aggressive 40 V-class power stages.

Availability

SPP100N04S2L-03 is available at Aetrix Electronics and suitable for server VRMs, industrial DC-DC converters, motor drive half-bridges, and telecom rectifier modules requiring stable component supply across multi-year production cycles.

Supply support for SPP100N04S2L-03 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

SPP100N04S2L-03 belongs to the OptiMOS™ 2nd generation logic-level power MOSFET product line, engineered specifically for high-current, high-efficiency DC-DC conversion in datacenter, industrial, and telecom infrastructure.

FAQ

What is the maximum safe operating temperature for SPP100N04S2L-03?

The absolute maximum junction temperature is 175 °C, and the device is fully specified across –55 °C to +175 °C. Derating begins at T_C > 25 °C per the ID vs. TC curve on page 4 of the datasheet: at T_C = 100 °C, continuous current drops to 70 A. The package's 0.5 K/W R_thJC enables precise thermal modeling using measured case temperature.

Does SPP100N04S2L-03 require a gate resistor for stability?

Yes-a gate resistor between 4.7 Ω and 15 Ω is recommended to dampen ringing caused by gate loop inductance and minimize dv/dt-induced shoot-through in half-bridge configurations. The 170 nC Q_g and 460 pF Crss result in a Miller plateau duration of ~45 ns at 10 V drive, making external gate resistance essential for clean switching transitions.

Can SPP100N04S2L-03 replace SPB100N04S2L-03 in PCB layouts?

No-SPP100N04S2L-03 uses TO-220-3 packaging while SPB100N04S2L-03 uses TO-263-3 (D²PAK). Their footprints, thermal vias, and mechanical mounting differ fundamentally. Though electrically identical, board redesign is required for substitution due to incompatible land patterns and heatsink interface geometry.

Is the body diode suitable for synchronous rectification?

No-the internal body diode is optimized for freewheeling and clamping, not synchronous rectification. Its 150–190 nC Q_rr and 80–100 ns t_rr generate significant reverse recovery loss at >100 kHz. For synchronous rectification, an external Schottky or GaN FET with zero Q_rr must be used in parallel or as a replacement.

SPP100N04S2L-03 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 40 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 230 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8000 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP100N04S2L-03 FAQ

1.How can I place an order for SPP100N04S2L-03 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP100N04S2L-03 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP100N04S2L-03 reliable?

The price and inventory of SPP100N04S2L-03 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP100N04S2L-03 is usually 5 days.

3.What payment methods are accepted for SPP100N04S2L-03?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP100N04S2L-03 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP100N04S2L-03?

SPP100N04S2L-03 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP100N04S2L-03 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP100N04S2L-03?

For technical support, including SPP100N04S2L-03 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP100N04S2L-03 requirements.

6.How does Aetrix verify that SPP100N04S2L-03 is sourced from the original manufacturer or authorized distributors?

All SPP100N04S2L-03 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP100N04S2L-03 meets industry standards.

7.What is the process for return or replacement of SPP100N04S2L-03?

All SPP100N04S2L-03 units undergo pre-shipment inspection (PSI). If there is an issue with SPP100N04S2L-03, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP100N04S2L-03 part is unused and in its original packaging.

Return procedure for SPP100N04S2L-03:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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