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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP100N06S2-05

Name: SPP100N06S2-05
Brand: Infineon Technologies
SKU: SPP100N06S2-05
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP100N06S2-05

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP100N06S2-05.pdf

Description:: MOSFET N-CH 55V 100A TO220-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

SPP100N06S2-05 from Infineon Technologies is an N-channel enhancement-mode power MOSFET in TO-220-3-1 package, rated for 55 V V_DS, 4.7 mΩ R_DS(on) max at V_GS = 10 V and I_D = 80 A, 100 A continuous drain current at T_C = 25 °C, and 175 °C maximum junction temperature. It is avalanche-rated and dv/dt-rated for robust switching in high-current DC-DC converters and motor drives.

For engineers reviewing the SPP100N06S2-05 datasheet, SPP100N06S2-05 pinout, SPP100N06S2-05 application, or SPP100N06S2-05 equivalent, key selection criteria include its low R_DS(on) with thermal stability up to 175 °C, 810 mJ single-pulse avalanche energy, and gate charge profile optimized for fast turn-on/turn-off in hard-switched topologies.

Technical Context

This MOSFET employs Infineon's OptiMOS™ 2nd generation trench technology, delivering enhanced conduction efficiency and reduced switching losses via optimized cell pitch and gate oxide design. Its 4.7 mΩ R_DS(on) is specified under real-world conditions (V_GS = 10 V, I_D = 80 A), and thermal resistance R_thJC is tightly controlled at 0.3–0.5 K/W for reliable heat transfer to heatsinks.

The device supports high dv/dt immunity (6 kV/µs) and exhibits stable transconductance (g_fs = 68–135 S) across operating current, enabling predictable gate drive sizing. Its reverse diode has V_SD = 0.9–1.3 V at I_F = 80 A and t_rr = 60–75 ns, supporting synchronous rectification and freewheeling in buck and half-bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	55 V - Supports 48 V nominal bus systems with 15% margin for transient overvoltage
R_DS(on) max	4.7 mΩ at V_GS = 10 V, I_D = 80 A - Enables ≤ 37.6 W conduction loss at 100 A, critical for high-efficiency power stages
I_D Continuous	100 A at T_C = 25 °C - Requires active heatsinking above ~60 °C case temperature per derating curve
E_AS	810 mJ - Withstands single-energy surges typical of inductive load switching without failure
Q_g total	130–170 nC - Dictates gate driver peak current requirement (~3–4 A for 50 ns rise time)
t_r/t_f	31–47 ns / 30–45 ns - Enables >500 kHz switching in non-resonant topologies with low EMI
V_GS(th)	2.1–4.0 V - Ensures clean turn-on with standard 5 V logic-level drivers while avoiding spurious conduction

Pinout & Package

Package: TO-220-3-1 (P-TO220-3-1), through-hole, isolated tab, leaded, with drain connected to tab for direct heatsink mounting.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to PCB ground plane or source return path
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <100 nA leakage; sensitive to ESD and ringing
Pin 3 (Drain)	Main current path output	Internally bonded to metal tab; must be electrically isolated from heatsink unless system design permits common-drain configuration

Key Features

Feature	Design Value
Avalanche-rated operation	810 mJ single-pulse energy handling enables reliable inductive switching without external snubbers
175 °C maximum junction temperature	Supports sustained operation in sealed enclosures or high-ambient environments (e.g., automotive under-hood, industrial PLCs)
dv/dt immunity of 6 kV/µs	Prevents false turn-on during fast voltage transients in bridge-leg configurations
Optimized gate charge profile	Q_gd/Q_g ratio of ~40% reduces Miller-induced switching delay and improves controllability
Low reverse recovery charge (Q_rr)	130–160 nC minimizes diode commutation loss and associated EMI in synchronous rectifiers

Applications

Motor Drive Inverter Stage

Server PSU Primary Switch

Use Scenario: High-current 3-phase inverter driving 1–5 kW BLDC motors in industrial automation.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET half-bridge modules, conducting 100 A RMS with 10–20 kHz PWM.

Use Value: 4.7 mΩ R_DS(on) reduces conduction loss by ≥25% vs. comparable 5.5 mΩ devices, lowering heatsink size and thermal management cost.

Use Scenario: Primary-side switch in 80 PLUS Titanium-certified 1.5 kW server power supplies.

IC Role / Device Role / Timing Role: Hard-switched MOSFET in LLC resonant converter primary leg, operating at 200–500 kHz with 55 V clamp.

Use Value: 810 mJ E_AS withstands transformer leakage inductance spikes without clamping, improving reliability over 500k-hour MTBF targets.

Automotive DC-DC Converter

Industrial UPS Output Stage

Use Scenario: 12 V–48 V bidirectional DC-DC converter in 48 V mild hybrid vehicle architectures.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary side, conducting 80–100 A with forced air cooling.

Use Value: V_SD = 0.9–1.3 V and t_rr = 60–75 ns reduce freewheeling loss by 18% vs. Schottky alternatives at 150 °C junction temp.

Use Scenario: Output H-bridge in 3 kVA online UPS delivering clean 230 VAC sine wave under 100% nonlinear load.

IC Role / Device Role / Timing Role: High-current switching device in full-bridge inverter stage, switching at 10–16 kHz with 100 A peak current.

Use Value: 175 °C T_jmax and R_thJC = 0.5 K/W enable stable 100% load operation at 60 °C ambient without derating.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFB4115PBF	R_DS(on) = 5.5 mΩ @ 10 V, V_DS = 55 V, Q_g = 160 nC, TO-220AB package	Higher conduction loss (+17%) and slower turn-off (t_f = 55 ns) limit efficiency in high-frequency designs	Preferred where legacy layout compatibility outweighs efficiency gains
STP100NF06L	R_DS(on) = 5.0 mΩ @ 10 V, V_DS = 60 V, Q_g = 140 nC, TO-220FP package (full-pack)	Lower V_GS(th) (1–2.5 V) increases risk of shoot-through in bridge circuits without precise gate control	Selected when 60 V rating and logic-level drive are prioritized over avalanche ruggedness

Compared with IRFB4115PBF and STP100NF06L, SPP100N06S2-05 delivers superior thermal performance (R_thJC = 0.5 K/W vs. ≥0.7 K/W), higher avalanche energy (810 mJ vs. ≤500 mJ), and tighter R_DS(on) tolerance-making it optimal for thermally constrained, high-reliability power conversion.

Availability

SPP100N06S2-05 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, and automotive DC-DC converters requiring stable component supply and long-term production continuity.

Supply support for SPP100N06S2-05 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D and manufacturing infrastructure.

SPP100N06S2-05 belongs to the OptiMOS™ 2nd generation power transistor family, engineered specifically for high-current, high-efficiency switching in industrial and automotive power conversion systems.

FAQ

What is the maximum safe operating temperature for SPP100N06S2-05?

The SPP100N06S2-05 has a maximum junction temperature (T_j) rating of +175 °C and operates safely from –55 °C to +175 °C. Its thermal resistance R_thJC is 0.3–0.5 K/W, meaning a 100 A, 4.7 mΩ conduction loss (47 W) raises the junction 23.5–35 K above case temperature-requiring heatsink design to maintain T_j ≤ 175 °C under worst-case ambient and airflow conditions.

Is SPP100N06S2-05 suitable for synchronous rectification?

Yes-its integrated body diode has V_SD = 0.9–1.3 V at I_F = 80 A and t_rr = 60–75 ns, with Q_rr = 130–160 nC. These parameters enable efficient synchronous rectification in buck, forward, and LLC converters up to 300 kHz, especially when paired with gate timing that avoids cross-conduction.

Does SPP100N06S2-05 require a gate resistor for stability?

Yes-a gate resistor (typically 2.2–10 Ω) is required to dampen gate-source ringing and control dV/dt during switching. The datasheet specifies t_d(on), t_r, t_d(off), and t_f using R_G = 2.2 Ω; increasing R_G slows switching but reduces EMI and gate driver stress, while decreasing it risks oscillation and overshoot.

How does the avalanche rating impact system design?

The 810 mJ single-pulse avalanche energy rating allows the device to absorb inductive energy from transformer leakage or motor winding interruption without failure. This eliminates need for external RCD snubbers in many hard-switched topologies, simplifying layout and reducing bill-of-materials cost-provided layout inductance and gate drive strength remain within recommended limits.

SPP100N06S2-05 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 5mOhm @ 80A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 170 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6800 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP100N06S2-05 FAQ

1.How can I place an order for SPP100N06S2-05 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP100N06S2-05 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP100N06S2-05 reliable?

The price and inventory of SPP100N06S2-05 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP100N06S2-05 is usually 5 days.

3.What payment methods are accepted for SPP100N06S2-05?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP100N06S2-05 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP100N06S2-05?

SPP100N06S2-05 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP100N06S2-05 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP100N06S2-05?

For technical support, including SPP100N06S2-05 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP100N06S2-05 requirements.

6.How does Aetrix verify that SPP100N06S2-05 is sourced from the original manufacturer or authorized distributors?

All SPP100N06S2-05 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP100N06S2-05 meets industry standards.

7.What is the process for return or replacement of SPP100N06S2-05?

All SPP100N06S2-05 units undergo pre-shipment inspection (PSI). If there is an issue with SPP100N06S2-05, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP100N06S2-05 part is unused and in its original packaging.

Return procedure for SPP100N06S2-05:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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