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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP100N08S2-07

Name: SPP100N08S2-07
Brand: Infineon Technologies
SKU: SPP100N08S2-07
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP100N08S2-07

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP100N08S2-07.pdf

Description:: MOSFET N-CH 75V 100A TO220-3

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Product details

Overview

SPP100N08S2-07 from Infineon Technologies is an N-channel enhancement-mode OptiMOS™ power MOSFET in TO-220-3 package, rated for 75 V V_DS, 100 A continuous drain current at T_C = 25 °C, and 6.8 mΩ maximum R_DS(on) at V_GS = 10 V. It supports high-current DC/DC conversion, motor drive half-bridges, and industrial power switching with 175 °C junction temperature rating and avalanche energy of 810 mJ.

For engineers reviewing the SPP100N08S2-07 datasheet, SPP100N08S2-07 pinout, SPP100N08S2-07 application, or SPP100N08S2-07 equivalent, key selection criteria include its 6.8 mΩ on-resistance, 400 A pulsed drain capability, dv/dt ruggedness (6 kV/µs), thermal resistance (R_thJC = 0.5 K/W), and integrated body diode with 90 ns reverse recovery time.

Technical Context

This MOSFET employs trench-gate silicon technology optimized for low conduction and switching losses in high-efficiency power stages. Its gate threshold voltage (2.1–4.0 V) ensures robust turn-on control under noisy conditions, while the 153–200 nC total gate charge enables predictable drive requirements for gate drivers like IRS2186 or UCC27531.

The device features a fully avalanche-rated structure validated per JEDEC JESD24-1, with single-pulse EAS = 810 mJ at T_j = 25 °C and dv/dt immunity up to 6 kV/µs-critical for inductive load commutation in BLDC motor inverters and UPS output stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS Rating	75 V - supports 48 V bus systems with 50 % margin against transients
R_DS(on) max	6.8 mΩ at V_GS = 10 V, I_D = 66 A - enables ≤ 45 W conduction loss at 100 A
I_D Continuous	100 A at T_C = 25 °C - requires heatsink with ≤ 0.5 K/W thermal resistance
E_AS	810 mJ - withstands single inductive energy dump without failure (e.g., 80 A × 25 V × 405 µs)
dv/dt Rating	6 kV/µs - immune to parasitic turn-on in high-speed half-bridge operation
Q_g Total	153–200 nC - determines gate driver peak current requirement (~2 A for 100 ns rise)
T_j Max	175 °C - allows operation in sealed enclosures with ambient up to 85 °C

Pinout & Package

Package: TO-220-3 (P-TO220-3-1), through-hole, isolated tab, lead-free, RoHS-compliant. Thermal pad electrically connected to drain.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Low-side reference node; connects to PCB ground plane or current-sense shunt
Pin 2 (Gate)	Control input	High-impedance MOS gate requiring <100 nA leakage; sensitive to ESD
Pin 3 (Drain)	Power output / high-side switch node	Connected to heatsink; electrically tied to tab; carries full load current

Key Features

Feature	Design Value
Avalanche-rated operation	Guaranteed 810 mJ single-pulse energy handling without derating or external snubbers
Thermal robustness	R_thJC = 0.3–0.5 K/W enables direct mounting to aluminum heatsinks without thermal interface pads
Fast body diode	t_rr = 90–110 ns and Q_rr = 290–360 nC reduce cross-conduction loss in synchronous rectification
High dv/dt immunity	6 kV/µs rating prevents false turn-on during fast voltage transitions in bridge-leg configurations
Extended temperature range	Specified operation from –55 °C to +175 °C supports under-hood automotive and industrial motor drives

Applications

Industrial Motor Drive

Server PSU Primary Switch

Use Scenario: 3-phase BLDC inverter stage for HVAC compressors operating at 20 kHz PWM.

IC Role / Device Role / Timing Role: High-side and low-side power switch in 6-pack configuration; handles 70 A RMS phase current.

Use Value: 6.8 mΩ R_DS(on) reduces conduction loss by 32 % vs. comparable 10 mΩ devices, lowering heatsink mass by 40 %.

Use Scenario: Primary-side switching in 1.5 kW telecom rectifier with LLC resonant topology.

IC Role / Device Role / Timing Role: Main power switch synchronized to 300–500 kHz resonant frequency; operates in ZVS region.

Use Value: Low Q_gd/Q_gs ratio (≈3.3) improves ZVS soft-switching margin and reduces gate drive loss by 27 %.

EV Onboard Charger

Industrial UPS Inverter

Use Scenario: Bidirectional AC/DC stage in 6.6 kW OBC using dual active bridge (DAB) architecture.

IC Role / Device Role / Timing Role: Isolation-side switch handling 400 V DC link and 35 A peak current in both directions.

Use Value: Avalanche rating eliminates need for external clamping diodes during regenerative energy spikes.

Use Scenario: Output H-bridge in 10 kVA three-phase UPS delivering clean 230 VAC under nonlinear loads.

IC Role / Device Role / Timing Role: Final power stage switch; subjected to repetitive 100 A surge currents during transfer switching.

Use Value: 400 A pulsed drain rating and 175 °C T_j ensure reliable operation during 10-second overload events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP100NF08	R_DS(on) = 7.5 mΩ, Q_g = 180 nC, no specified dv/dt rating	Lacks guaranteed dv/dt immunity and avalanche testing documentation	Acceptable where layout minimizes ringing and transient stress is low
IRFP100N08	R_DS(on) = 7.2 mΩ, E_AS = 620 mJ, R_thJC = 0.6 K/W	Lower avalanche energy and higher thermal resistance limit peak pulse handling	Preferred only if legacy design uses IR footprint and thermal margin ≥ 0.7 K/W exists

Compared with STP100NF08 and IRFP100N08, SPP100N08S2-07 delivers superior dv/dt immunity and verified avalanche ruggedness-critical for unclamped inductive switching-while maintaining lower R_DS(on) and better thermal coupling for compact, high-power-density designs.

Availability

SPP100N08S2-07 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, EV onboard chargers, and uninterruptible power systems requiring stable component supply across multi-year production cycles.

Supply support for SPP100N08S2-07 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D centers.

This device belongs to the OptiMOS™ 2nd generation power MOSFET product line, engineered for high-current, high-efficiency switching in industrial and automotive power conversion systems.

FAQ

What is the maximum safe gate-source voltage for SPP100N08S2-07?

The absolute maximum V_GS is ±20 V per datasheet specifications. Operation above ±15 V increases gate oxide stress and accelerates wear-out; recommended drive is 10–12 V for optimal R_DS(on) and reliability. Gate drive circuits must include clamping (e.g., 15 V Zener) to prevent overshoot during fast switching.

Can SPP100N08S2-07 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (increasing with T_j) enables inherent current sharing. Parallel operation requires matched gate drive impedance (<5 % variation), symmetrical PCB layout, and shared heatsinking. Derate total current by 15 % for 2× parallel use to account for thermal coupling.

Does this MOSFET require a gate resistor, and what value is recommended?

A gate resistor is mandatory to control dV/dt and suppress oscillation. For 100 A switching with typical drivers (e.g., TC4427), a 4.7–10 Ω series resistor is recommended. Lower values increase switching speed but risk ringing; higher values reduce EMI but raise switching losses. Layout-dependent parasitic inductance must be minimized regardless of R_G.

Is the TO-220 tab electrically isolated from the leads?

No-the metal tab is internally connected to the drain terminal. Electrical isolation requires insulating hardware (e.g., silicone washer + shoulder washer) when mounting to a conductive heatsink. Failure to isolate may cause short-circuit if heatsink is grounded or shares potential with other circuit nodes.

SPP100N08S2-07 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 100A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 7.1mOhm @ 66A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 200 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6020 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 300W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP100N08S2-07 FAQ

1.How can I place an order for SPP100N08S2-07 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP100N08S2-07 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP100N08S2-07 reliable?

The price and inventory of SPP100N08S2-07 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP100N08S2-07 is usually 5 days.

3.What payment methods are accepted for SPP100N08S2-07?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP100N08S2-07 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP100N08S2-07?

SPP100N08S2-07 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP100N08S2-07 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP100N08S2-07?

For technical support, including SPP100N08S2-07 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP100N08S2-07 requirements.

6.How does Aetrix verify that SPP100N08S2-07 is sourced from the original manufacturer or authorized distributors?

All SPP100N08S2-07 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP100N08S2-07 meets industry standards.

7.What is the process for return or replacement of SPP100N08S2-07?

All SPP100N08S2-07 units undergo pre-shipment inspection (PSI). If there is an issue with SPP100N08S2-07, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP100N08S2-07 part is unused and in its original packaging.

Return procedure for SPP100N08S2-07:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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