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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP10N10

Name: SPP10N10
Brand: Infineon Technologies
SKU: SPP10N10
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP10N10

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP10N10.pdf

Description:: MOSFET N-CH 100V 10.3A TO220-3

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Product details

Overview

SPP10N10 from Infineon Technologies is an N-channel enhancement-mode SIPMOS™ power MOSFET rated for 100 V drain-source voltage, 10.3 A continuous drain current at 25°C case temperature, and 180 mΩ typical R_DS(on) at V_GS = 10 V. It features avalanche rating, 6 kV/µs dv/dt capability, and operates up to 175°C junction temperature - deployed in DC-DC converter primary-side switching and motor drive half-bridge legs.

For engineers reviewing the SPP10N10 datasheet, SPP10N10 pinout, SPP10N10 application, or SPP10N10 equivalent, key selection criteria include its TO-220-3 package thermal resistance (R_thJC = 3 K/W), gate threshold voltage range (2.1–4 V), and pulsed drain current rating of 41.2 A - critical for hard-switched SMPS and brushed DC motor control designs.

Technical Context

This MOSFET uses planar SIPMOS™ technology optimized for low conduction loss and robust unclamped inductive switching (UIS) performance. Its 100 V V_(BR)DSS supports 48 V bus systems with margin, while the 175°C T_jmax enables high-temperature industrial operation without derating penalties.

The device integrates a fast-recovery body diode (t_rr and Q_rr specified) and exhibits 6 kV/µs dv/dt immunity - enabling reliable operation in noisy, high-di/dt environments such as solenoid drivers and H-bridge inverters without external snubbing.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - supports 48 V nominal input rails with ≥2× safety margin against transients
R_DS(on)	180 mΩ max at V_GS = 10 V - determines I²R conduction loss in 10 A load applications
I_D (continuous)	10.3 A at T_C = 25°C - defines maximum steady-state current with heatsink
E_AS	60 mJ - quantifies single-pulse avalanche energy handling in inductive turn-off
dv/dt rating	6 kV/µs - ensures immunity to parasitic turn-on during high-speed switching
T_j max	175°C - allows operation in sealed enclosures or high ambient temperature environments
V_GS(th)	2.1–4 V - enables direct drive from 3.3 V or 5 V logic with sufficient overdrive margin

Pinout & Package

Package: P-TO220-3-1 - through-hole, isolated tab, standard TO-220 outline with drain-connected metal tab for thermal and electrical mounting.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; connects to low-side return path or ground plane
Pin 2 (Gate)	Control electrode	High-impedance input requiring <100 nA leakage; driven by dedicated gate driver IC
Pin 3 (Drain)	Main current output	Internally connected to metal tab; must be electrically isolated from heatsink unless system design permits common-drain topology

Key Features

Feature	Design Value
Avalanche rated	60 mJ single-pulse E_AS - eliminates need for external clamping in relay/snubberless inductive loads
175°C operating temperature	Full-rated current available up to 175°C T_j - reduces thermal derating in compact industrial controls
dv/dt rated	6 kV/µs immunity - prevents false turn-on in high-noise motor drive and power supply environments
N-channel enhancement mode	V_GS(th) = 2.1–4 V - compatible with standard microcontroller GPIO or level-shifted gate drivers
Low R_DS(on)	180 mΩ max - limits conduction loss to ≤1.87 W at 10.3 A, simplifying thermal design

Applications

Brushed DC Motor Control

Industrial DC-DC Converters

Use Scenario: Driving 24–48 V brushed motors in automated valves and conveyor systems with PWM at 20 kHz.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge configuration; handles bidirectional current during freewheeling via body diode.

Use Value: 175°C rating enables operation inside sealed IP65 enclosures; 6 kV/µs dv/dt immunity suppresses noise-induced shoot-through.

Use Scenario: Primary-side switch in 48 V input, 12 V output flyback converters for PLC I/O modules.

IC Role / Device Role / Timing Role: Main power switch conducting 10.3 A peak current; switched at 65–100 kHz with ZVS-assisted topology.

Use Value: 100 V V_(BR)DSS provides margin against reflected voltage spikes; 60 mJ E_AS withstands transformer leakage energy without failure.

Power Supply OR-ing Circuits

Solenoid & Relay Drivers

Use Scenario: Back-to-back configuration for redundant 24 V power supplies in telecom shelf management.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diodes; controlled turn-on to minimize forward drop and reverse recovery loss.

Use Value: R_DS(on) = 180 mΩ yields <200 mV forward drop at 1 A - cutting heat generation by >70% vs. 0.4 V diode.

Use Scenario: High-current solenoid actuation in HVAC dampers with 100 ms on-time and 10 A hold current.

IC Role / Device Role / Timing Role: Single-ended switch controlling inductive load; absorbs stored energy via avalanche-rated channel during turn-off.

Use Value: 60 mJ E_AS rating eliminates need for TVS/clamp diodes; reduces BOM count and PCB area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK100Z	1000 V V_(BR)DSS, 10 A I_D, 1.2 Ω R_DS(on)	Designed for high-voltage flyback and PFC stages, not 48 V systems	Select only when >600 V blocking is required; unsuitable for low-voltage efficiency-critical use
IRF540N	100 V V_(BR)DSS, 33 A I_D, 44 mΩ R_DS(on), TO-220 package	Lower R_DS(on) but higher gate charge (71 nC vs. ~35 nC); less dv/dt rugged	Prefer for high-efficiency, low-loss 10 A switching where gate drive strength permits

Compared with STP10NK100Z and IRF540N, the SPP10N10 uniquely balances 100 V rating, 180 mΩ on-resistance, 6 kV/µs dv/dt immunity, and 60 mJ avalanche energy - making it optimal for ruggedized 48 V industrial switching where reliability trumps ultra-low R_DS(on).

Availability

SPP10N10 is available at Aetrix Electronics and suitable for brushed DC motor control, industrial DC-DC converters, power supply OR-ing circuits, and solenoid/relay drivers requiring stable component supply across long-lifecycle embedded programs.

Supply support for SPP10N10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with global manufacturing and R&D centers.

The SIPMOS™ power transistor product line delivers rugged, high-reliability MOSFETs for industrial, automation, and power conversion applications - engineered for avalanche endurance, high-temperature operation, and noise-immune switching.

FAQ

Is the SPP10N10 suitable for synchronous rectification in DC-DC converters?

No - the SPP10N10 is not optimized for synchronous rectification due to its relatively high R_DS(on) (180 mΩ) and unspecified reverse recovery characteristics for bidirectional conduction. Its body diode is rated for unidirectional freewheeling, not high-frequency reverse conduction. For synchronous rectification, Infineon's OptiMOS™ series with lower Q_g and specified t_rr/Q_rr is recommended.

What is the maximum gate resistor value recommended for reliable switching?

For 10.3 A switching at 100 kHz with minimal overshoot, a gate resistor of 10–22 Ω is recommended when driven by a 2 A peak gate driver. Higher values (>47 Ω) increase switching losses and risk incomplete turn-on due to gate threshold spread (2.1–4 V); lower values (<5 Ω) may cause ringing without proper PCB layout damping.

Does the metal tab of the TO-220 package connect to drain internally?

Yes - Pin 3 (Drain) is internally bonded to the metal tab. Electrical isolation between tab and heatsink is mandatory unless the system design explicitly requires drain-to-chassis connection. Use insulating shoulder washers and thermally conductive but electrically isolating pads (e.g., silicone-based) during mounting.

Can the SPP10N10 replace the IRFZ44N in existing designs?

Yes, with verification - both are 100 V, TO-220 N-channel MOSFETs, but the SPP10N10 has higher R_DS(on) (180 mΩ vs. 28 mΩ) and superior dv/dt/avalanche ratings. Replace only if thermal margin exists and ruggedness (not efficiency) is the priority; gate drive compatibility is maintained due to similar V_GS(th) and Q_g ranges.

SPP10N10 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 10.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 170mOhm @ 7.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 21µA

Gate Charge (Qg) (Max) @ Vgs:: 19.4 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 426 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP10N10 FAQ

1.How can I place an order for SPP10N10 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP10N10 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP10N10 reliable?

The price and inventory of SPP10N10 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP10N10 is usually 5 days.

3.What payment methods are accepted for SPP10N10?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP10N10 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP10N10?

SPP10N10 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP10N10 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP10N10?

For technical support, including SPP10N10 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP10N10 requirements.

6.How does Aetrix verify that SPP10N10 is sourced from the original manufacturer or authorized distributors?

All SPP10N10 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP10N10 meets industry standards.

7.What is the process for return or replacement of SPP10N10?

All SPP10N10 units undergo pre-shipment inspection (PSI). If there is an issue with SPP10N10, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP10N10 part is unused and in its original packaging.

Return procedure for SPP10N10:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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