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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP10N10L

Name: SPP10N10L
Brand: Infineon Technologies
SKU: SPP10N10L
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP10N10L

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP10N10L.pdf

Description:: MOSFET N-CH 100V 10.3A TO220-3

Quantity:: RFQ Add To RFQ list

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Inventory:6,435

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Product details

Overview

SPP10N10L from Infineon Technologies is an N-channel enhancement-mode logic-level power MOSFET in TO-220-3 package, rated for 100 V V_DS, 10.3 A continuous drain current at T_C = 25°C, and 154 mΩ R_DS(on) at V_GS = 10 V. It supports avalanche-rated operation up to 60 mJ and operates from –55°C to +175°C, commonly used in DC-DC converters and motor control stages.

For engineers reviewing the SPP10N10L datasheet, SPP10N10L pinout, SPP10N10L application, or SPP10N10L equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1.2–2.0 V), thermal resistance (R_thJC = 3 K/W), reverse diode forward voltage (V_SD = 0.93–1.25 V), and dv/dt ruggedness (6 kV/µs).

Technical Context

This MOSFET employs SIPMOS® trench technology optimized for low gate charge (Q_g = 17.7–22 nC) and fast switching (t_r = 19.1–28.7 ns, t_f = 17.8–26.7 ns), enabling high-efficiency hard-switched topologies. Its 100 V breakdown voltage and 175°C maximum junction temperature support robust operation in industrial power supplies and automotive auxiliary systems.

The device integrates a monolithic body diode with reverse recovery time (t_rr = 57–71 ns) and Q_rr = 126–158 nC, suitable for synchronous rectification and freewheeling paths where controlled commutation is required.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	100 V - Maximum blocking voltage before avalanche onset; defines usable input range in 48 V and 60 V bus applications.
R_DS(on) @ V_GS = 10 V	154 mΩ max - Conduction loss contributor; yields ~1.3 W dissipation at 8.1 A DC, guiding heatsink sizing.
I_D (continuous, T_C = 25°C)	10.3 A - Safe steady-state current under ideal case cooling; derates to 8.1 A at T_C = 100°C.
E_AS	60 mJ - Single-pulse avalanche energy rating; enables reliable operation during inductive turn-off transients.
Q_g	22 nC max - Total gate charge; determines driver strength requirement and switching loss trade-off.
t_r/t_f	28.7 / 26.7 ns max - Rise/fall times at V_DD = 50 V, I_D = 10.3 A; constrains minimum achievable switching frequency.
V_GS(th)	1.2–2.0 V - Gate threshold range; ensures full enhancement with 3.3 V or 5 V logic-level microcontroller outputs.

Pinout & Package

Package: P-TO220-3-1 - Through-hole plastic package with isolated tab, standard footprint, and 3 K/W junction-to-case thermal resistance.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path collector	Electrically connected to metal tab; requires insulated mounting or direct heatsink contact with isolation pad.
Source	Reference node for gate drive and current return	Common connection point for load return and gate driver ground; defines local 0 V reference for V_GS.
Gate	Control terminal for channel conduction	High-impedance input requiring <22 nC charge; sensitive to ESD and ringing-needs local RC snubbing.

Key Features

Feature	Design Value
Logic-level gate drive	V_GS(th) ≤ 2.0 V enables direct interface with 3.3 V/5 V MCUs without level-shifting circuitry.
Avalanche-rated operation	60 mJ single-pulse E_AS supports unclamped inductive switching in relay drivers and solenoid controls.
dv/dt ruggedness	6 kV/µs rating prevents false turn-on during high-slew-rate voltage transients in noisy industrial environments.
High-temperature capability	175°C max T_j allows sustained operation in enclosed enclosures or near heat sources without derating penalties.
Integrated body diode	V_SD = 0.93–1.25 V at 10.3 A supports freewheeling in buck converters and H-bridge motor drives.

Applications

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: Step-down regulation from 48 V battery to 12 V rail in industrial control cabinets.

IC Role / Device Role / Timing Role: High-side synchronous switch operating at 200 kHz with 10.3 A peak load current.

Use Value: Low R_DS(on) (154 mΩ) minimizes conduction loss; logic-level gate simplifies gate driver IC selection.

Use Scenario: Half-bridge drive for 24 V brushed motors in automated material handling equipment.

IC Role / Device Role / Timing Role: Low-side switch controlling motor direction and PWM speed via MCU GPIO.

Use Value: Avalanche rating absorbs back-EMF spikes during abrupt stop; 175°C rating accommodates sealed gearbox proximity.

AC-DC Auxiliary Supply

LED Constant-Current Driver

Use Scenario: Primary-side active clamp or secondary-side synchronous rectifier in 15 W offline SMPS.

IC Role / Device Role / Timing Role: Fast-switching MOSFET in flyback topology with 50 V clamp voltage and 100 kHz switching.

Use Value: Low Q_g (22 nC) reduces driver losses; dv/dt immunity prevents spurious turn-on from transformer leakage.

Use Scenario: Constant-current switch in linear+PWM hybrid LED driver for high-bay lighting fixtures.

IC Role / Device Role / Timing Role: Precision current sink modulated at 1–10 kHz to regulate luminance without flicker.

Use Value: Tight V_GS(th) tolerance (1.2–2.0 V) ensures consistent turn-on across temperature; low R_DS(on) enables <1% current error at 1 A.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP10NK10ZFP	R_DS(on) = 180 mΩ @ 10 V; higher Q_g (25 nC); Zener-protected gate.	Lower avalanche energy (45 mJ); less suited for unclamped inductive loads.	Prefer when gate ESD robustness is prioritized over switching efficiency.
IRF540N	V_GS(th) = 2–4 V; not logic-level; R_DS(on) = 44 mΩ @ 10 V but requires 10 V drive.	Needs external level shifter for 3.3 V MCU; better for high-current, low-frequency switching.	Select only if gate drive voltage ≥ 10 V is available and lower R_DS(on) justifies added complexity.

Compared with STP10NK10ZFP and IRF540N, SPP10N10L uniquely balances logic-level compatibility, 100 V rating, and 60 mJ avalanche capability-making it optimal for compact, thermally constrained 3.3 V–driven industrial power stages where reliability under transient stress is critical.

Availability

SPP10N10L is available at Aetrix Electronics and suitable for DC-DC converters, motor drivers, AC-DC auxiliary supplies, and LED constant-current drivers requiring stable component supply and long-term industrial availability.

Supply support for SPP10N10L includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

SPP10N10L belongs to the SIPMOS® logic-level power MOSFET product line, engineered for high-efficiency, space-constrained switching applications in industrial automation and embedded power systems.

FAQ

Is SPP10N10L suitable for 3.3 V microcontroller gate drive?

Yes. With V_GS(th) ranging from 1.2 V to 2.0 V and guaranteed R_DS(on) at V_GS = 4.5 V (169–210 mΩ), it fully enhances using standard 3.3 V GPIO outputs without external level shifting. Verified operation at 3.3 V is documented in Infineon's preliminary data sheet on page 2.

What is the maximum safe operating temperature for continuous use?

The absolute maximum junction temperature is +175°C, and the device is rated for continuous operation across –55°C to +175°C. Derating curves on page 4 confirm 10.3 A I_D is valid only at T_C = 25°C; at T_C = 100°C, continuous current drops to 8.1 A per thermal limits.

Does SPP10N10L have an integrated body diode, and what are its characteristics?

Yes. It features a monolithic fast-recovery body diode with V_SD = 0.93–1.25 V at I_F = 10.3 A and t_rr = 57–71 ns at dI_F/dt = 100 A/µs. These values are measured per conditions on page 3 and support freewheeling in buck and half-bridge topologies.

Can SPP10N10L replace IRFZ44N in existing designs?

No direct drop-in replacement. While both are TO-220 N-channel MOSFETs, IRFZ44N has V_GS(th) = 2–4 V and is not logic-level. SPP10N10L offers lower threshold and higher V_DS (100 V vs. 55 V), but its R_DS(on) (154 mΩ) is higher than IRFZ44N's 28 mΩ-requiring layout and thermal review before substitution.

SPP10N10L Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: SIPMOS®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 10.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 4.5V, 10V

Rds On (Max) @ Id, Vgs:: 154mOhm @ 8.1A, 10V

Vgs(th) (Max) @ Id:: 2V @ 21µA

Gate Charge (Qg) (Max) @ Vgs:: 22 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 444 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 50W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP10N10L FAQ

1.How can I place an order for SPP10N10L through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP10N10L on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP10N10L reliable?

The price and inventory of SPP10N10L are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP10N10L is usually 5 days.

3.What payment methods are accepted for SPP10N10L?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP10N10L transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP10N10L?

SPP10N10L orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP10N10L order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP10N10L?

For technical support, including SPP10N10L datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP10N10L requirements.

6.How does Aetrix verify that SPP10N10L is sourced from the original manufacturer or authorized distributors?

All SPP10N10L products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP10N10L meets industry standards.

7.What is the process for return or replacement of SPP10N10L?

All SPP10N10L units undergo pre-shipment inspection (PSI). If there is an issue with SPP10N10L, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP10N10L part is unused and in its original packaging.

Return procedure for SPP10N10L:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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