Infineon Technologies SPP11N60C3XKSA1

Overview

SPP11N60C3 from Infineon Technologies is a 600 V, 11 A N-channel CoolMOS™ C3 superjunction power MOSFET in PG-TO220 package, featuring R_DS(on) = 0.38 Ω at T_j = 25°C, ultra-low gate charge (Q_g = 45–60 nC), and periodic avalanche rating. It serves as a high-efficiency primary-side switch in offline SMPS, PFC stages, and industrial AC-DC converters operating up to 150°C junction temperature.

For engineers reviewing the SPP11N60C3 datasheet, SPP11N60C3 pinout, SPP11N60C3 application, or SPP11N60C3 equivalent, key selection criteria include its 50 V/ns dv/dt capability, 340 mJ single-pulse avalanche energy, 1 K/W junction-to-case thermal resistance, and compatibility with hard-switched 380–480 V DC-link topologies.

Technical Context

This device implements Infineon's third-generation CoolMOS™ C3 technology, optimized for reduced conduction and switching losses in continuous conduction mode (CCM) PFC and resonant LLC primary switches. Its gate threshold voltage (V_GS(th) = 2.1–3.9 V) enables robust drive with standard 10–13 V gate drivers, while low C_iss (1200 pF) and C_oss (390 pF) support high-frequency operation up to 100 kHz.

The MOSFET integrates a fast-recovery body diode (t_rr = 400–600 ns, Q_rr = 6 µC) suitable for synchronous rectification and ZVS transitions. Thermal design leverages its 1 K/W R_thJC and full isolation (2500 V_AC, 1 min) in the PG-TO220-3-31 package, enabling direct heatsink mounting without insulating pads in isolated power supplies.

Key Specifications

Pinout & Package

Package: PG-TO220-3-31 (fully isolated, 2500 V_AC, 1 min; lead-free, RoHS-compliant).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPP60R190C7 and STP12N60DM6, SPP11N60C3 uniquely combines full isolation, 11 A continuous current rating, and 340 mJ avalanche energy-making it optimal for safety-critical, high-reliability 1–3 kW offline power supplies where thermal and surge robustness are non-negotiable.

Availability

SPP11N60C3 is available at Aetrix Electronics and suitable for server PSUs, industrial PFC modules, LED streetlight drivers, and telecom rectifiers requiring stable component supply and long-term lifecycle support.

Supply support for SPP11N60C3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The CoolMOS™ C3 product line targets high-efficiency, high-reliability AC-DC conversion in enterprise, industrial, and infrastructure power systems-emphasizing low R_DS(on), rugged avalanche behavior, and thermal robustness.

FAQ

What is the maximum continuous drain current for SPP11N60C3 at 100°C case temperature?

The maximum continuous drain current is 7 A at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limits of the PG-TO220 package and ensures safe operation within the 150°C maximum junction temperature. At T_C = 25°C, the rating is 11 A, but real-world designs must apply thermal modeling using R_thJC = 1 K/W and ambient conditions.

Does SPP11N60C3 have an integrated body diode, and what are its key parameters?

Yes, SPP11N60C3 includes a monolithic body diode with typical forward voltage V_SD = 1.0–1.2 V at I_F = 11 A and T_j = 25°C. Its reverse recovery time t_rr is 400–600 ns, and reverse recovery charge Q_rr is 6 µC under V_R = 480 V, dI_F/dt = 100 A/µs conditions-enabling use in quasi-resonant and ZVS topologies without external diode replacement.

Can SPP11N60C3 be used in avalanche-mode operation, and what are the limits?

SPP11N60C3 is explicitly rated for both single-pulse (E_AS = 340 mJ at I_D = 5.5 A, V_DD = 50 V) and repetitive avalanche (E_AR = 0.6 mJ, I_AR = 11 A). Repetitive operation must respect the power loss constraint P_AV = E_AR × f, and junction temperature must remain below 150°C. The device is not intended for sustained linear-mode avalanche.

What is the recommended gate resistor value for hard-switched 380 V DC-link applications?

A 6.8 Ω gate resistor is validated in the datasheet for V_DD = 380 V, V_GS = 0/+10 V, and I_D = 11 A, yielding td(on) ≈ 10 ns, tr ≈ 5 ns, td(off) ≈ 44–70 ns, and tf ≈ 5–9 ns. This value balances switching speed, EMI, and gate driver stress. Lower values increase di/dt (up to 3000 A/µs) but risk oscillation; higher values reduce EMI but raise switching losses.