Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP11N65C3XKSA1

Name: SPP11N65C3XKSA1
Brand: Infineon Technologies
SKU: SPP11N65C3XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: SPP11N65C3XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP11N65C3XKSA1.pdf

Description:: MOSFET N-CH 650V 11A TO220-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:3,774

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

SPP11N65C3XKSA1 from Infineon Technologies is a 650 V, 11 A CoolMOS™ C3 superjunction N-channel power MOSFET in PG-TO220 package, featuring R_DS(on) = 0.38 Ω at V_GS = 10 V and T_j = 25 °C, ultra-low gate charge (Q_g = 45–60 nC), and periodic avalanche rating. It serves as a high-efficiency primary-side switch in offline SMPS, PFC stages, and industrial AC-DC converters operating up to 150 °C junction temperature.

For engineers reviewing the SPP11N65C3XKSA1 datasheet, SPP11N65C3XKSA1 pinout, SPP11N65C3XKSA1 application, or SPP11N65C3XKSA1 equivalent, key selection criteria include its 50 V/ns dv/dt rating, 340 mJ single-pulse avalanche energy, 125 W power dissipation at T_C = 25 °C, and thermal resistance R_thJC = 1 K/W - critical for high-reliability 650 V hard-switched topologies.

Technical Context

This device implements Infineon's third-generation CoolMOS™ C3 technology, optimized for reduced conduction and switching losses in continuous conduction mode (CCM) PFC and resonant LLC primary switches. Its low Q_gd/Q_gs ratio (22 nC / 5.5 nC) improves voltage-controlled turn-off robustness, while the 1200 pF input capacitance (C_iss) supports stable gate drive design with standard 6.8 Ω source resistance.

The MOSFET integrates a fast body diode with t_rr = 400–600 ns and Q_rr = 6 µC under V_R = 480 V, enabling efficient operation in bridge configurations without external anti-parallel diodes. Its R_DS(on) exhibits <1.4× increase from 25 °C to 150 °C, ensuring predictable thermal derating in enclosed power supplies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Supports universal AC input (85–265 VAC) with ≥2× safety margin in 400 V DC bus applications
R_DS(on)	0.38 Ω max @ T_j = 25 °C - Enables <5 W conduction loss at 11 A, reducing heatsink requirements
Q_g	45–60 nC - Lowers gate driver power demand and EMI during 100 kHz+ switching
E_AS	340 mJ - Withstands single-pulse inductive energy spikes without failure in flyback/LLC snubbers
dv/dt Rating	50 V/ns - Ensures immunity to parasitic turn-on in high-di/dt half-bridge layouts
R_thJC	1 K/W - Allows direct mounting to heatsink for 125 W continuous operation at T_C = 25 °C
t_r/t_f	5 ns / 5–9 ns - Supports clean edge control in ZVS/ZCS topologies with minimal switching loss

Pinout & Package

PG-TO220 package with isolated drain tab (pin 2), source (pin 1), and gate (pin 3). Standard 3-pin through-hole mounting; drain tab electrically connected to pin 2 and thermally coupled to heatsink.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path and gate reference	Low-inductance connection point for source loop; ties gate drive ground and power ground
Pin 2 (Drain)	Main high-voltage current path	Internally bonded to metal tab; requires insulated mounting when heatsink is grounded
Pin 3 (Gate)	Control terminal for channel modulation	High-impedance input requiring <100 nA leakage handling; sensitive to ESD and ringing

Key Features

Feature	Design Value
Ultra-low gate charge	Q_g = 45–60 nC enables <1 W gate driver loss at 100 kHz with 13 V drive
Periodic avalanche rated	Repetitive I_AR = 4 A at V_DD = 50 V allows safe operation in unclamped inductive switching
Extreme dv/dt immunity	50 V/ns rating prevents false turn-on in high-speed half-bridge gate node coupling
Improved transconductance	g_fs = 8.3 S ensures tight V_GS-controlled current regulation across load range
Body diode optimization	t_rr = 400–600 ns and Q_rr = 6 µC reduce recovery loss in synchronous rectification

Applications

Server PSU Primary Switch

Industrial PFC Boost Stage

Use Scenario: 3.3 kW front-end AC-DC converter in 1U rack server with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side main switch operating at 70–100 kHz with 650 V blocking and 11 A RMS current.

Use Value: 0.38 Ω R_DS(on) reduces conduction loss by 22% vs. previous-gen 600 V MOSFETs, lowering thermal stress on 1U airflow-limited chassis.

Use Scenario: Continuous conduction mode (CCM) boost PFC stage in factory automation PLC power supply.

IC Role / Device Role / Timing Role: Unidirectional switch controlling inductor current to maintain sinusoidal input current at >98% THD.

Use Value: 50 V/ns dv/dt rating eliminates need for gate resistors >10 Ω, preserving efficiency while suppressing shoot-through risk.

Solar Microinverter DC-Link

EV Onboard Charger (OBC) Isolation Stage

Use Scenario: DC-DC isolation stage in 300–600 V string-level microinverter with SiC diode output rectification.

IC Role / Device Role / Timing Role: Primary-side switch in dual-active-bridge (DAB) topology, switching at 150–250 kHz.

Use Value: 1200 pF C_iss and 30 pF Cr_ss enable precise zero-voltage switching (ZVS) timing control with minimal dead-time penalty.

Use Scenario: Primary-side switch in 6.6 kW bidirectional OBC using phase-shifted full-bridge (PSFB) architecture.

IC Role / Device Role / Timing Role: Hard-switched bridge leg device handling 400 V DC bus and 11 A peak current during AC charging cycles.

Use Value: 340 mJ E_AS withstands transformer leakage inductance energy spikes during soft-start and fault conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12N65M2	R_DS(on) = 0.35 Ω, Q_g = 42 nC, no specified dv/dt rating	Lacks documented 50 V/ns immunity; requires additional gate clamping in high-di/dt layouts	Preferred where lower R_DS(on) dominates over dv/dt robustness
IPP65R041C7	R_DS(on) = 0.041 Ω, Q_g = 72 nC, 650 V rating, TO-220FP package	Higher gate charge increases driver loss; smaller package limits thermal mass for same power	Selected when <0.05 Ω R_DS(on) justifies higher cost and gate drive complexity

Compared with STP12N65M2 and IPP65R041C7, SPP11N65C3XKSA1 delivers optimal balance of avalanche ruggedness, dv/dt immunity, and thermal performance in TO-220 - making it preferred for industrial SMPS where reliability under transient stress outweighs marginal R_DS(on) gains.

Availability

SPP11N65C3XKSA1 is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, solar microinverters, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for SPP11N65C3XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and security solutions, with global manufacturing and R&D centers.

The CoolMOS™ C3 product line targets high-efficiency, high-reliability AC-DC conversion in enterprise, industrial, and renewable energy systems - emphasizing ruggedness, low EMI, and thermal stability over raw speed.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The SPP11N65C3XKSA1 supports 7 A continuous drain current at T_C = 100 °C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the PG-TO220 package and ensures safe operation within the 150 °C maximum junction temperature limit under sustained load.

Does this MOSFET require a negative gate turn-off voltage?

No. The SPP11N65C3XKSA1 has a gate threshold voltage (V_GS(th)) of 2.1–3.9 V and is designed for 0 V to +10 V or +13 V gate drive. A negative turn-off voltage is not required or recommended; maintaining V_GS ≤ –20 V avoids gate oxide stress per datasheet limits.

Can it replace older CoolMOS™ C2 devices in existing designs?

Yes - SPP11N65C3XKSA1 is a direct drop-in replacement for SPP11N65C2 in most cases, offering identical pinout, improved R_DS(on), lower Q_g, and enhanced dv/dt rating. Layout changes are unnecessary, though gate resistor tuning may further optimize switching behavior.

What is the typical reverse recovery charge (Q_rr) of the integrated body diode?

The body diode Q_rr is 6 µC under test conditions of V_R = 480 V, I_F = I_S, and di_F/dt = 100 A/µs. This value is confirmed in the Electrical Characteristics table on page 4 of the official datasheet and enables accurate loss modeling in bridge-based topologies.

SPP11N65C3XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 11A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:: 60 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP11N65C3XKSA1 FAQ

1.How can I place an order for SPP11N65C3XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP11N65C3XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP11N65C3XKSA1 reliable?

The price and inventory of SPP11N65C3XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP11N65C3XKSA1 is usually 5 days.

3.What payment methods are accepted for SPP11N65C3XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP11N65C3XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP11N65C3XKSA1?

SPP11N65C3XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP11N65C3XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP11N65C3XKSA1?

For technical support, including SPP11N65C3XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP11N65C3XKSA1 requirements.

6.How does Aetrix verify that SPP11N65C3XKSA1 is sourced from the original manufacturer or authorized distributors?

All SPP11N65C3XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP11N65C3XKSA1 meets industry standards.

7.What is the process for return or replacement of SPP11N65C3XKSA1?

All SPP11N65C3XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPP11N65C3XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP11N65C3XKSA1 part is unused and in its original packaging.

Return procedure for SPP11N65C3XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …

2026-07-06 Voltage Regulator: Types, Circuits, Testing and Selection Guide

Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.

2026-06-30 Amplifiers Explained: Types, Circuits, Gain, Classes and Applications

Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…