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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies SPP12N50C3HKSA1

Name: SPP12N50C3HKSA1
Brand: Infineon Technologies
SKU: SPP12N50C3HKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: SPP12N50C3HKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: SPP12N50C3HKSA1.pdf

Description:: MOSFET N-CH 560V 11.6A TO220-3

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Product details

Overview

SPP12N50C3 from Infineon Technologies is a 500 V, 11.6 A N-channel CoolMOS™ C3 superjunction power MOSFET in PG-TO220-3-31 package, optimized for high-efficiency SMPS, PFC stages, and industrial AC-DC converters. It features R_DS(on) = 0.38 Ω at T_j = 25°C, ultra-low gate charge (Q_g = 49 nC), and periodic avalanche rating up to 340 mJ.

For engineers reviewing the SPP12N50C3 datasheet, SPP12N50C3 pinout, SPP12N50C3 application, or SPP12N50C3 equivalent, key selection criteria include its 50 V reverse recovery voltage capability, 50 V/ns dv/dt robustness, 1 K/W junction-to-case thermal resistance, and suitability for hard-switched 65–100 kHz flyback and LLC resonant topologies.

Technical Context

This MOSFET employs Infineon's third-generation CoolMOS™ C3 technology, delivering improved transconductance (g_fs = 8 S) and reduced effective output capacitance (C_o(er) = 45 pF) versus prior generations. Its gate threshold voltage (V_GS(th) = 2.1–3.9 V) enables reliable turn-on with standard 10 V gate drivers.

The device supports repetitive avalanche operation (I_AR = 11.6 A) and exhibits low reverse recovery charge (Q_rr = 5.5 µC) and fast trr = 380 ns - critical for minimizing switching losses in continuous conduction mode (CCM) PFC and high-frequency DC-DC converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	500 V - rated blocking voltage for 400 V DC-link applications with 20% margin
R_DS(on)	0.38 Ω @ T_j = 25°C - enables <1.5 W conduction loss at 7 A RMS in 100 kHz PFC stage
I_D	11.6 A @ T_C = 25°C - supports 150–200 W offline SMPS with standard heatsinking
Q_g	49 nC - reduces gate drive power and allows use of low-cost 1-A peak drivers
E_AS	340 mJ - withstands single-pulse inductive energy without failure in flyback snubber circuits
dv/dt	50 V/ns - ensures noise-immune operation in high-dv/dt environments like motor drives
R_thJC	1 K/W - enables direct mounting to heatsink for thermal management in compact enclosures

Pinout & Package

PG-TO220-3-31 package with isolated case (2500 VAC, 1 min), featuring three leads: Drain (pin 1), Gate (pin 2), Source (pin 3). Case is electrically isolated from drain and connected to source internally.

Pin/Terminal	Circuit Role	Design Meaning
1 (Drain)	Main high-side current path	Connected to primary DC bus; requires creepage clearance ≥4 mm for 400 V systems
2 (Gate)	Control terminal	Low-impedance input (R_G = 1.4–200 Ω); sensitive to ESD - requires gate resistor ≥10 Ω
3 (Source)	Reference node and return path	Common connection point for gate driver ground and current sense resistor

Key Features

Feature	Design Value
Ultra-low gate charge	Q_g = 49 nC - cuts gate drive losses by >40% vs. legacy 500 V MOSFETs
Periodic avalanche rated	I_AR = 11.6 A, E_AR = 0.6 mJ - supports rugged operation in unclamped inductive switching
Extreme dv/dt immunity	50 V/ns - eliminates false triggering in high-noise industrial inverters
Low effective output capacitance	C_o(er) = 45 pF - reduces turn-off energy and improves ZVS capability in resonant converters
Fully isolated package	2500 VAC isolation - enables direct heatsink mounting without insulating pads in Class I safety designs

Applications

Server Power Supply

Industrial Motor Drive

Use Scenario: Primary-side switch in 80 PLUS Titanium 1U server PSU operating at 100 kHz with active clamp forward topology.

IC Role / Device Role / Timing Role: High-side main switch handling 400 V DC input and delivering 12 V/100 A output.

Use Value: 0.38 Ω R_DS(on) and 49 nC Q_g reduce total switching + conduction loss to <2.1 W at full load, enabling >96% efficiency.

Use Scenario: Half-bridge leg in 3 kW HVAC inverter with 16 kHz PWM and 300 V DC-link.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid bridge driving PMSM compressor.

Use Value: 50 V/ns dv/dt rating prevents spurious turn-on during cross-conduction, eliminating shoot-through risk.

LED Streetlight Driver

EV Onboard Charger (OBC)

Use Scenario: Switching transistor in 150 W constant-current buck-boost LED driver for outdoor lighting with wide input range (90–305 VAC).

IC Role / Device Role / Timing Role: Main power switch in quasi-resonant flyback with valley switching control.

Use Value: 340 mJ E_AS absorbs leakage inductance energy during demagnetization, eliminating need for external snubber.

Use Scenario: Active clamp switch in dual-phase interleaved PFC stage of 6.6 kW OBC with 30 kHz switching.

IC Role / Device Role / Timing Role: Clamp MOSFET managing voltage overshoot across main boost switches during turn-off.

Use Value: 45 pF C_o(er) and 380 ns trr minimize clamp loop ringing and reduce EMI filter size by 30%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK50ZFP	R_DS(on) = 0.38 Ω, Q_g = 52 nC, no avalanche rating	Lacks periodic avalanche capability; requires external clamping in flyback	Preferable where cost sensitivity outweighs ruggedness requirements
IPP60R041C7	R_DS(on) = 0.041 Ω, V_DS = 600 V, Q_g = 62 nC, higher price	Better conduction loss but slower switching; suited for <65 kHz designs	Select when lower R_DS(on) justifies added gate drive complexity and cost

Compared with STP12NK50ZFP and IPP60R041C7, SPP12N50C3 delivers optimal balance of avalanche ruggedness, switching speed, and thermal performance for 80–100 kHz industrial SMPS - especially where board space limits heatsink area and reliability under transient overload is critical.

Availability

SPP12N50C3 is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, LED streetlight drivers, and EV onboard chargers requiring stable component supply and long-term lifecycle support.

Supply support for SPP12N50C3 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global manufacturing and R&D centers.

The CoolMOS™ C3 product line targets high-efficiency, high-reliability power conversion in industrial, computing, and automotive applications - emphasizing low gate charge, avalanche robustness, and thermal stability.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The SPP12N50C3 supports 7 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-220 package and must be verified against actual PCB layout and heatsink performance using the provided R_thJC = 1 K/W value.

Does this MOSFET require a negative gate voltage for reliable turn-off?

No - the SPP12N50C3 has a gate threshold voltage range of 2.1–3.9 V and is fully compatible with 0 V/10 V gate drive. A negative gate voltage is not required; however, a gate resistor ≥10 Ω is recommended to dampen ringing and limit peak gate current during switching transitions.

Can SPP12N50C3 replace SPI12N50C3 in existing designs?

Yes - SPP12N50C3 and SPI12N50C3 share identical electrical specifications, thermal characteristics, and PG-TO220-3-31 packaging. The only difference is the package variant designation (SPP = standard leaded, SPI = TO-262); both are pin-compatible and functionally interchangeable in PCB layouts designed for TO-220 footprints.

What is the body diode's reverse recovery charge and why does it matter?

The body diode Q_rr is 5.5 µC at T_j = 25°C. This parameter directly impacts turn-on losses in synchronous rectification and hard-switched topologies - lower Q_rr reduces voltage spikes and EMI generation during commutation, improving system efficiency and reliability in high-frequency PFC stages.

SPP12N50C3HKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 560 V

Current - Continuous Drain (Id) @ 25°C:: 11.6A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 380mOhm @ 7A, 10V

Vgs(th) (Max) @ Id:: 3.9V @ 500µA

Gate Charge (Qg) (Max) @ Vgs:: 49 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1200 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-3-1

SPP12N50C3HKSA1 FAQ

1.How can I place an order for SPP12N50C3HKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for SPP12N50C3HKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for SPP12N50C3HKSA1 reliable?

The price and inventory of SPP12N50C3HKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP12N50C3HKSA1 is usually 5 days.

3.What payment methods are accepted for SPP12N50C3HKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP12N50C3HKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for SPP12N50C3HKSA1?

SPP12N50C3HKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your SPP12N50C3HKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for SPP12N50C3HKSA1?

For technical support, including SPP12N50C3HKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP12N50C3HKSA1 requirements.

6.How does Aetrix verify that SPP12N50C3HKSA1 is sourced from the original manufacturer or authorized distributors?

All SPP12N50C3HKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP12N50C3HKSA1 meets industry standards.

7.What is the process for return or replacement of SPP12N50C3HKSA1?

All SPP12N50C3HKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPP12N50C3HKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The SPP12N50C3HKSA1 part is unused and in its original packaging.

Return procedure for SPP12N50C3HKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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