Infineon Technologies SPP15P10PGHKSA1

Overview

SPP15P10PGHKSA1 from Infineon Technologies is a P-channel enhancement-mode SIPMOS® power MOSFET in PG-TO252-3 package, rated for -100 V V_DS, 15 A continuous drain current, and 240 mΩ max R_DS(on) at V_GS = -10 V. It is AEC-Q101 qualified and avalanche-rated for automotive load switching in 12 V/24 V systems.

For engineers reviewing the SPP15P10PGHKSA1 datasheet, SPP15P10PGHKSA1 pinout, SPP15P10PGHKSA1 application, or SPP15P10PGHKSA1 equivalent, key selection factors include its -100 V blocking capability, low gate charge (Q_g = 48 nC max), integrated avalanche energy rating (E_AS = 128 mJ), and thermal resistance (R_thJC = 1.17 K/W) for high-reliability power control.

Technical Context

This MOSFET operates in enhancement mode with normal-level gate drive (V_GS(th) = -4 to -2.1 V), enabling direct interface with standard logic-level controllers without level-shifting. Its robust avalanche rating supports unclamped inductive switching in motor drivers and solenoid controls.

The device features low output capacitance (C_oss = 315 pF max) and fast switching dynamics (t_r = 33 ns, t_f = 20 ns), optimized for high-efficiency DC-DC converters and PWM-controlled power stages where EMI and conduction loss trade-offs are critical.

Key Specifications

Pinout & Package

Package: PG-TO252-3 (DPAK), surface-mount, lead-free, RoHS-compliant. Drain-connected tab provides low-inductance thermal path to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel MOSFET switching applications.

Compared with IRF9540NPBF and IPD95R1K2P7ATMA1, SPP15P10PGHKSA1 uniquely combines AEC-Q101 compliance, -100 V rating, low R_DS(on), and guaranteed avalanche energy-making it the only validated choice for automotive-grade 12/24 V high-current switching where reliability and transient robustness are mandatory.

Availability

SPP15P10PGHKSA1 is available at Aetrix Electronics and suitable for automotive body electronics, industrial motor control, LED lighting systems, and telecom power distribution requiring stable component supply and long-term lifecycle support.

Supply support for SPP15P10PGHKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and AEC standards.

This part belongs to Infineon's SIPMOS® Small-Signal-Transistor product line, engineered for high-reliability, high-current switching in automotive and industrial environments where ruggedness, thermal performance, and qualification compliance are essential.

FAQ

Is SPP15P10PGHKSA1 pin-compatible with TO-220 variants like SPD15P10PG?

No. SPP15P10PGHKSA1 uses PG-TO252-3 (DPAK) packaging with three gull-wing leads, while SPD15P10PG uses PG-TO220-3 with through-hole mounting and different pin spacing and thermal pad layout. Mechanical and soldering footprints are incompatible; PCB redesign is required for substitution.

What is the maximum safe operating temperature for continuous 15 A drain current?

At 15 A continuous drain current, junction temperature must remain ≤175 °C. With R_thJC = 1.17 K/W and typical R_DS(on) = 160 mΩ, power dissipation is ~36 W. Using a 6 cm² copper area on FR4, case temperature must be held ≤85 °C to maintain safe T_j; active cooling or derating is required above that.

Does the integrated body diode support synchronous rectification?

No. The body diode has V_SD = -1.35 V max and t_rr = 150 ns, making it unsuitable for synchronous rectification in high-frequency DC-DC converters. Its design intent is freewheeling and clamping-not efficient bidirectional conduction. External Schottky diodes or complementary MOSFETs are required for sync-rectified topologies.

Can SPP15P10PGHKSA1 be driven directly by a 3.3 V microcontroller GPIO?

Yes, but with caution. V_GS(th) ranges from -4 V to -2.1 V, so a 3.3 V GPIO cannot turn the device fully on (requires negative gate-source bias). It must be used in high-side configuration with level-shifting circuitry (e.g., charge pump or dedicated gate driver) to apply ≥-10 V to achieve R_DS(on) ≤240 mΩ. Direct 3.3 V drive results in weak conduction and thermal runaway risk.