Infineon Technologies SPP20N60S5HKSA1
- Part No.:
- SPP20N60S5HKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
SPP20N60S5HKSA1.pdf
- Description:
- HIGH POWER_LEGACY
- Quantity:
- Payment:

- Shipping:

Inventory:9,742
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
SPP20N60S5 from Infineon Technologies is a 600 V, 20 A CoolMOS™ superjunction N-channel power MOSFET in PG-TO220 package, featuring RDS(on) = 0.19 Ω (Tj = 25°C), ultra-low gate charge (Qg = 79 nC), and periodic avalanche rating. It serves as a high-efficiency primary-side switch in offline SMPS, PFC stages, and industrial motor drives operating up to 150°C junction temperature.
For engineers reviewing the SPP20N60S5 datasheet, SPP20N60S5 pinout, SPP20N60S5 application, or SPP20N60S5 equivalent, key selection criteria include its 20 V/ns dv/dt immunity, 690 mJ single-pulse avalanche energy, 3000 pF input capacitance, and thermal resistance RthJC = 0.6 K/W - critical for high-reliability 600 V hard-switched topologies.
Technical Context
This device implements Infineon's 5th-generation CoolMOS™ superjunction architecture, optimized for reduced conduction and switching losses simultaneously. Its low effective output capacitance (Co(er) = 83 pF) and minimized reverse transfer capacitance (Crss = 28 pF) enable fast, low-loss turn-off with controlled voltage overshoot in clamped inductive switching.
The integrated body diode exhibits trr = 610 ns and Qrr = 12 µC under VR = 350 V, IF = 20 A, and diF/dt = 100 A/µs - enabling moderate-frequency synchronous rectification or freewheeling in bridge configurations without external diode supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - supports universal AC input (85–265 VAC) with ≥2× safety margin in flyback and LLC resonant converters |
| RDS(on) | 0.19 Ω @ Tj = 25°C - enables <1.5 W conduction loss at 13 A DC, reducing heatsink requirements in 150–300 W SMPS |
| Qg | 79 nC - lowers gate drive power and allows use of smaller, lower-cost gate drivers (e.g., 1-A peak) at 100 kHz |
| EAS | 690 mJ - withstands single-pulse inductive energy spikes without failure in unclamped inductive loads (e.g., relay coils, solenoids) |
| dv/dt Rating | 20 V/ns - suppresses false turn-on in high-noise environments like industrial inverters and UPS systems |
| RthJC | 0.6 K/W - permits 208 W continuous dissipation at TC = 25°C, supporting compact thermal design with minimal copper area |
| tr/tf | 25 ns / 30 ns - enables efficient operation up to 300 kHz with low switching loss and EMI control |
Pinout & Package
Package: PG-TO220 (standard through-hole, 3-pin, isolated tab). Pin 1 = Gate, Pin 2 = Drain (tab-connected), Pin 3 = Source. The metal tab is electrically connected to the Drain terminal and must be insulated from heatsink unless circuit topology requires common-drain configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Gate) | Control electrode | Receives 10 V logic-level drive; requires <100 nF local decoupling due to 3000 pF Ciss and 47 nC Qgd |
| Pin 2 (Drain) | Main current path (high-side) | Connected to high-voltage rail; tab is electrically active - insulation required unless used as heat sink return |
| Pin 3 (Source) | Reference node / return path | Serves as local ground reference for gate driver; layout must minimize inductance to avoid ringing during switching |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low gate charge | Qg = 79 nC reduces gate drive loss by >40% vs. legacy 600 V MOSFETs, enabling higher frequency operation without driver derating |
| Periodic avalanche rated | Rated for repetitive avalanche (IAR = 20 A, EAR = 1 mJ) - eliminates need for external snubbers in inductive load switching |
| Extreme dv/dt immunity | 20 V/ns rating prevents spurious turn-on during fast voltage transients in half-bridge and phase-shifted full-bridge topologies |
| Low effective output capacitance | Co(er) = 83 pF minimizes stored energy (Eoss = 12 µJ @ 400 V), reducing turn-off loss and improving ZVS initiation in resonant converters |
| Enhanced body diode performance | trr = 610 ns and soft recovery reduce EMI and voltage spikes in freewheeling paths, easing EMI filter design |
Applications
| Server PSU Primary Switch | Industrial PFC Boost Stage |
|---|---|
Use Scenario: 80 PLUS Titanium 1 kW server power supply operating at 100–300 kHz with active clamp flyback or LLC topology. IC Role / Device Role / Timing Role: High-side main switch handling 600 V DC bus, modulated at variable frequency with precise zero-voltage switching timing. Use Value: 0.19 Ω RDS(on) and 79 nC Qg cut conduction + switching losses by 18% vs. predecessor, enabling >96% efficiency at full load. | Use Scenario: Three-phase 11 kW industrial motor drive with boost-type active front-end (AFE) for harmonic compliance (IEC 61000-3-2 Class A). IC Role / Device Role / Timing Role: Fast-switching boost switch in continuous conduction mode (CCM), synchronized to line voltage zero-crossings. Use Value: 20 V/ns dv/dt rating ensures stable operation despite high dV/dt noise from IGBT inverter stage; 690 mJ EAS absorbs transient overvoltage during grid fault events. |
| EV Onboard Charger (OBC) DC-DC Stage | Solar Microinverter Half-Bridge |
Use Scenario: 3.3 kW bidirectional OBC with dual-active-bridge (DAB) isolation, requiring high-reliability 600 V switches on secondary side. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier switch operating at 200–500 kHz with adaptive dead-time control. Use Value: Low Crss (28 pF) and soft-recovery body diode (Qrr = 12 µC) reduce cross-conduction risk and EMI, meeting CISPR-25 Class 5 limits. | Use Scenario: 300 W solar microinverter with transformerless H5 topology, converting 30–60 V PV input to 230 V AC grid output. IC Role / Device Role / Timing Role: High-side leg switch in unipolar PWM half-bridge, subjected to rapid polarity reversal and leakage current constraints. Use Value: Isolated TO220 package enables safe creepage/clearance for Class II isolation; 150°C Tjmax supports sealed enclosure operation without forced air cooling. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP20NM60ND | RDS(on) = 0.22 Ω, Qg = 85 nC, no specified dv/dt rating | Lacks 20 V/ns immunity and avalanche energy spec - requires external clamping in noisy environments | Lower cost but needs additional protection circuitry; suitable only where layout controls EMI and transients |
| IPP60R190C7 | RDS(on) = 0.19 Ω, Qg = 63 nC, Ciss = 2500 pF, Tjmax = 150°C | Lower Qg improves switching efficiency but lacks periodic avalanche rating (EAR not specified) | Better for high-frequency ZVS designs; unsuitable for unclamped inductive loads without redesign |
Compared with STP20NM60ND and IPP60R190C7, SPP20N60S5 uniquely combines 690 mJ EAS, 20 V/ns dv/dt rating, and 0.19 Ω RDS(on) - making it the only option qualified for ruggedized industrial PFC and server PSU designs requiring both reliability and efficiency without added protection components.
Availability
SPP20N60S5 is available at Aetrix Electronics and suitable for server power supplies, industrial PFC modules, EV onboard chargers, and solar microinverters requiring stable component supply across multi-year production cycles.
Supply support for SPP20N60S5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global manufacturing and R&D infrastructure.
The CoolMOS™ product line targets high-efficiency, high-reliability power conversion in industrial, computing, and renewable energy systems - engineered specifically for reduced RDS(on) × Qg figure-of-merit and robust avalanche behavior.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The SPP20N60S5 supports 13 A continuous drain current at TC = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO220 package and must be verified against actual PCB layout, heatsink interface, and ambient conditions using the provided RthJC = 0.6 K/W and transient thermal impedance curves.
Does this MOSFET require a negative gate voltage for reliable turn-off?
No - the SPP20N60S5 has a gate threshold voltage (VGS(th)) of 3.5–5.5 V and is fully enhanced at VGS = 10 V. A gate drive range of 0 V to +10 V is sufficient; applying negative voltage is unnecessary and not recommended per datasheet guidelines.
Can the body diode be used for synchronous rectification in a 100 kHz LLC converter?
Yes - the body diode exhibits trr = 610 ns and Qrr = 12 µC under standard test conditions, enabling usable synchronous rectification up to ~150 kHz when paired with appropriate gate timing control. However, dedicated SR controllers are recommended to manage reverse recovery and prevent shoot-through.
Is the TO220 tab electrically isolated from the leads?
No - the metal tab is internally connected to the Drain (Pin 2) and is not electrically isolated. When mounting to a heatsink, an insulating pad or shoulder washer must be used unless the heatsink is intentionally tied to the high-voltage drain rail. This is confirmed in the "Package Outline" and "Thermal Characteristics" sections of the official datasheet.
SPP20N60S5HKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 190mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id:
- 5.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 103 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3000 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 208W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-3-1
SPP20N60S5HKSA1 FAQ
1.How can I place an order for SPP20N60S5HKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for SPP20N60S5HKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SPP20N60S5HKSA1 reliable?
The price and inventory of SPP20N60S5HKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP20N60S5HKSA1 is usually 5 days.
3.What payment methods are accepted for SPP20N60S5HKSA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP20N60S5HKSA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SPP20N60S5HKSA1?
SPP20N60S5HKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SPP20N60S5HKSA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SPP20N60S5HKSA1?
For technical support, including SPP20N60S5HKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP20N60S5HKSA1 requirements.
6.How does Aetrix verify that SPP20N60S5HKSA1 is sourced from the original manufacturer or authorized distributors?
All SPP20N60S5HKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP20N60S5HKSA1 meets industry standards.
7.What is the process for return or replacement of SPP20N60S5HKSA1?
All SPP20N60S5HKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with SPP20N60S5HKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SPP20N60S5HKSA1 part is unused and in its original packaging.
Return procedure for SPP20N60S5HKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
SPP20N60S5HKSA1 Tags

-
BSZ180P03NS3EGATMA1
Infineon Technologies

-
SIRA14DP-T1-GE3
Vishay Siliconix

-
AO4419
Alpha & Omega Semiconductor Inc.

-
SISA14BDN-T1-GE3
Vishay Siliconix

-
PSMN9R5-30YLC,115
Nexperia USA Inc.

-
BUK9Y21-40E,115
Nexperia USA Inc.

-
RTQ035N03HZGTR
Rohm Semiconductor

-
FDMS7680
onsemi

-
RQ3E180BNTB
Rohm Semiconductor

-
STL6N2VH5
STMicroelectronics

-
DMPH4029LFGQ-7
Diodes Incorporated

-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…
Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…
Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…
Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…
Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …
Voltage regulator guide covering linear, LDO, 7805, Zener, adjustable, buck, VRM and alternator regulators, with design checks, testing methods, troubleshooting and datasheet-based selection.
Amplifier guide covering voltage, current and power amplification, gain, feedback, amplifier classes, audio and RF applications, op-amp circuits, transimpedance amplifiers, datasheet selection and trou…

