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Infineon Technologies SPP21N10
- Part No.:
- SPP21N10
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
SPP21N10.pdf
- Description:
- MOSFET N-CH 100V 21A TO220-3
- Quantity:
- Payment:
- Shipping:
Inventory:4,840
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Product details
Overview
SPP21N10 from Infineon Technologies is an N-channel enhancement-mode SIPMOS™ power MOSFET in PG-TO220-3-1 package, rated for 100 V VDS, 21 A continuous drain current at TC = 25°C, and 80 mΩ RDS(on) at VGS = 10 V. It features avalanche rating (EAS = 130 mJ), 6 kV/µs dv/dt capability, and 175°C maximum junction temperature - deployed in DC-DC converters, motor drives, and industrial power switching.
For engineers reviewing the SPP21N10 datasheet, SPP21N10 pinout, SPP21N10 application, or SPP21N10 equivalent, key selection criteria include its 100 V blocking voltage, 21 A thermal-current capability at case temperature, 65–80 mΩ on-resistance range, avalanche ruggedness, and TO-220-compatible leaded package with isolated tab.
Technical Context
This device operates as a unidirectional high-side or low-side switch in hard-switched topologies. Its gate threshold voltage (2.1–4.0 V) enables standard 5 V or 10 V logic-level drive, while its 6.5–12.4 S transconductance supports fast current control under varying load conditions.
The integrated body diode exhibits 0.94–1.25 V forward voltage at 21 A and 65–81.5 ns reverse recovery time, enabling moderate-frequency freewheeling in non-synchronous buck or flyback stages without external Schottky supplementation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - supports 48 V input systems with ≥2× safety margin against transient overvoltage |
| RDS(on) | 65–80 mΩ @ VGS = 10 V - determines conduction loss in 15–21 A continuous operation |
| ID (cont) | 21 A @ TC = 25°C - defines heatsink sizing requirement for ambient-limited PCB mounting |
| EAS | 130 mJ - enables single-pulse inductive energy absorption without failure in motor or relay snubbing |
| dv/dt Rating | 6 kV/µs - ensures reliable turn-off immunity in noisy high-dI/dt environments like inverters |
| Tj(max) | 175°C - allows sustained operation in sealed enclosures or high-ambient industrial settings |
| Qg | 28.9–38.4 nC - sets minimum gate driver current and switching loss budget at 100 kHz operation |
Pinout & Package
Package: PG-TO220-3-1 - through-hole, insulated tab, vertical mounting, 3-pin configuration with drain-connected metal tab for direct heatsinking.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Reference node for gate drive and current return path | Low-impedance connection point for source routing; ties to ground or low-side return in half-bridge |
| Pin 2 (Gate) | Control terminal for channel modulation | Requires <20 V absolute rating; sensitive to ESD; needs low-inductance gate loop for <15 ns rise time |
| Pin 3 (Drain) | Main high-voltage power terminal | Internally bonded to metal tab; electrically connected to heatsink - requires isolation if heatsink is grounded |
Key Features
| Feature | Design Value |
|---|---|
| Avalanche-rated operation | Guarantees single-pulse robustness up to 130 mJ without derating - eliminates need for external clamping in inductive loads |
| 175°C maximum junction temperature | Enables full 21 A current delivery in compact enclosures where ambient exceeds 85°C |
| Pb-free & RoHS compliant | Meets EU Directive 2011/65/EU - suitable for consumer, industrial, and automotive-qualified assemblies |
| dv/dt immune (6 kV/µs) | Prevents false turn-on during high-slew-rate commutation - critical in multi-MOSFET bridge configurations |
| Integrated body diode | Supports 21 A continuous freewheeling with 0.94–1.25 V VSD - reduces BOM count in non-synchronous SMPS |
Applications
| Motor Drive Stage | Industrial DC-DC Converter |
|---|---|
Use Scenario: Driving brushed DC motors in factory automation actuators with 24–48 V bus and 15–20 A peak load. IC Role / Device Role / Timing Role: Low-side switching element in H-bridge configuration, handling bidirectional current with body-diode freewheeling. Use Value: 100 V rating accommodates 48 V bus + 30% surge; 21 A rating covers stall current without thermal shutdown. | Use Scenario: Primary-side switch in 300 W isolated flyback converter for PLC I/O modules. IC Role / Device Role / Timing Role: Hard-switched main power transistor operating at 65 kHz with 100 V reflected output voltage. Use Value: Avalanche rating absorbs leakage inductance spikes; 6 kV/µs dv/dt immunity prevents spurious turn-on during transformer reset. |
| Power Supply OR-ing | AC-DC Front-End Switch |
Use Scenario: Redundant 48 V input OR-ing in telecom rectifier shelves with hot-swap capability. IC Role / Device Role / Timing Role: High-side ideal diode replacement, controlled via external gate driver for reverse-current blocking. Use Value: 80 mΩ RDS(on) yields <0.5 W conduction loss at 21 A - lower than discrete Schottky solution with thermal derating. | Use Scenario: PFC boost switch in universal-input 200 W AC-DC adapter for medical equipment. IC Role / Device Role / Timing Role: Fast-switching, high-reliability power stage handling 100 V DC link with 15 A average current. Use Value: 175°C Tj(max) sustains operation under sustained overload; Pb-free construction meets IEC 60601-1 soldering requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP22NF10 | 100 V, 22 A, RDS(on) = 70 mΩ, TO-220FP package (no isolated tab) | Lacks insulated tab - requires insulating washer for heatsink mounting | Preferred when mechanical isolation is handled externally and cost sensitivity outweighs thermal advantage |
| IRF540N | 100 V, 33 A, RDS(on) = 44 mΩ, TO-220AB package (non-isolated tab) | Higher current rating but no avalanche rating or dv/dt specification | Selected only in non-inductive, low-noise applications where ruggedness is secondary to conduction loss |
Compared with STP22NF10 and IRF540N, the SPP21N10 uniquely combines certified avalanche ruggedness, 6 kV/µs dv/dt immunity, and an insulated TO-220 tab - making it the only choice for industrial motor drives and redundant power systems requiring guaranteed fault tolerance.
Availability
SPP21N10 is available at Aetrix Electronics and suitable for industrial motor drives, telecom power supplies, PLC power modules, and medical AC-DC front-ends requiring stable component supply across extended product lifecycles.
Supply support for SPP21N10 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive ICs, and security solutions, with global manufacturing and R&D centers.
The SIPMOS™ power transistor product line delivers rugged, high-current MOSFETs optimized for industrial switching, motor control, and high-reliability power conversion - emphasizing avalanche robustness, thermal stability, and system-level fault immunity.
FAQ
Is the SPP21N10 suitable for synchronous rectification?
No - its body diode reverse recovery time (65–81.5 ns) and Qrr (153–192 nC) exceed typical requirements for high-frequency synchronous rectification. It is designed for hard-switched primary-side or low-frequency freewheeling roles, not sub-100 ns switching in secondary-side rectifiers.
What is the maximum gate resistor value for reliable 100 kHz switching?
With Qg = 28.9–38.4 nC and target 15 ns rise time, the gate resistor must be ≤13 Ω when driven by a ±1 A capable driver. Higher resistance increases switching loss and risks incomplete turn-on at elevated temperature due to VGS(th) drift.
Does the insulated tab require thermal compound when mounted to a heatsink?
Yes - although electrically isolated, the metal tab is thermally conductive. Thermal interface material (e.g., silicone grease or phase-change pad) is required between tab and heatsink to minimize RthJC (1.7 K/W max) and prevent localized hot spots above 120°C junction temperature.
Can SPP21N10 replace SPI21N10 or SPB21N10 in existing designs?
Yes - all three share identical electrical specs and die, differing only in package: SPP21N10 uses PG-TO220-3-1 (leaded, insulated tab), SPI21N10 uses PG-TO262-3-1 (leadless, insulated), and SPB21N10 uses PG-TO263-3-2 (SMD, insulated). Mechanical redesign is needed only for footprint and mounting method.
SPP21N10 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- SIPMOS®
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 21A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 80mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 44µA
- Gate Charge (Qg) (Max) @ Vgs:
- 38.4 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 865 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 90W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO220-3-1
SPP21N10 FAQ
1.How can I place an order for SPP21N10 through Aetrix?
Please submit a Request for Quotation (RFQ) for SPP21N10 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for SPP21N10 reliable?
The price and inventory of SPP21N10 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for SPP21N10 is usually 5 days.
3.What payment methods are accepted for SPP21N10?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for SPP21N10 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for SPP21N10?
SPP21N10 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your SPP21N10 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for SPP21N10?
For technical support, including SPP21N10 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your SPP21N10 requirements.
6.How does Aetrix verify that SPP21N10 is sourced from the original manufacturer or authorized distributors?
All SPP21N10 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that SPP21N10 meets industry standards.
7.What is the process for return or replacement of SPP21N10?
All SPP21N10 units undergo pre-shipment inspection (PSI). If there is an issue with SPP21N10, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The SPP21N10 part is unused and in its original packaging.
Return procedure for SPP21N10:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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